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1.
Transient liquid-phase (TLP) sintering of CaF2 additive on the densification behaviors and microstructural development of AlN ceramics are investigated. It is found that 1 wt% CaF2 can effectively promote densification process. Increasing content of CaF2 results in finer grain size and slower densification during intermediate sintering stage. XRD results show that grain-boundary phase of CaAl4O7 is formed at 1150 °C from reactions of AlN–CaF2–Al2O3. With further temperature increasing, the grain-boundary phases of CA2 and CaAl12O18, which were formed from the reaction between CaF2 and oxide layers, experienced transformations firstly into CaAl4O7 above 1600 °C and into CaAl2O4 at higher temperature. SEM and TEM results show that formed grain-boundary phases can evaporate from sintering bodies during further soaking, leaving clean grain boundaries. The efficiency of TLP sintering mechanism is further manifested by the preparation of transparent AlN ceramics with good combination properties.  相似文献   

2.
The high sintering temperature required for aluminum nitride (AlN) at typically 1800 °C, is an impediment to its development as an engineering material. Spark plasma sintering (SPS) of AlN is carried out with samarium oxide (Sm2O3) as sintering additive at a sintering temperature as low as 1500–1600 °C. The effect of sintering temperature and SPS cycle on the microstructure and performance of AlN is studied. There appears to be a direct correlation between SPS temperature and number of repeated SPS sintering cycle per sample with the density of the final sintered sample. The addition of Sm2O3 as a sintering aid (1 and 3 wt.%) improves the properties and density of AlN noticeably. Thermal conductivity of AlN samples improves with increase in number of SPS cycle (maximum of 2) and sintering temperature (up to 1600 °C). Thermal conductivity is found to be greatly improved with the presence of Sm2O3 as sintering additive, with a thermal conductivity value about 118 W m−1 K−1) for the 3 wt.% Sm2O3-doped AlN sample SPS at 1500 °C for 3 min. Dielectric constant of the sintered AlN samples is dependent on the relative density of the samples. The number of repeated SPS cycle and sintering aid do not, however, cause significant elevation of the dielectric constant of the final sintered samples. Microstructures of the AlN samples show that, densification of AlN sample is effectively enhanced through increase in the operating SPS temperature and the employment of multiple SPS cycles. Addition of Sm2O3 greatly improves the densification of AlN sample while maintaining a fine grain structure. The Sm2O3 dopant modifies the microstructures to decidedly faceted AlN grains, resulting in the flattening of AlN–AlN grain contacts.  相似文献   

3.
《Ceramics International》2022,48(5):6615-6626
AlN compacts with different CaO–Y2O3–C mixtures were sintered between 1100 and 1850 °C to understand the effects of the in situ formed reducing atmosphere on the densification behavior and evolution of the second-phases. AlN with Y2O3 densified at 1750 °C, but the addition of C changed the second-phases evolution towards Y-rich phases that delayed the densification. For AlN containing CaO, the second-phases were little influenced by the reducing atmosphere, but the addition of C increased the evaporation of the second-phase compounds during sintering, limiting the densification due to the reduction of the liquid-phase fraction and the gas trapping inside the pores. AlN with CaO–Y2O3 mixtures could be completely densified at 1650 °C, but the addition of C inhibited the densification below this sintering temperature because liquid-phase had poor wetting and spreading characteristics and the second-phase a high melting point (>1800 °C).  相似文献   

4.
Sintering behavior of three different compositions in the AlN–Al2O3 system using Y2O3 as a sintering aid was investigated. Samples with various ratios of AlN/Al2O3 were sintered in nitrogen atmosphere using a gas pressure furnace in the temperature range 1750–1950 °C. The densification of the samples was studied by shrinkage and relative density measurements. Results showed that samples containing 1 and 70 wt.% alumina were sintered to near theoretical density at 1800 °C; whereas the sample with 20 wt.% alumina never reached densities higher than 93% in the temperature range considered. It was found that the AlN/Al2O3 ratio and the sintering temperature had a great influence on the microstructure and crystalline phases present in the samples, namely, AlN, γ-AlON, 27R, and YAG. In the sample with 20 wt.% alumina, porosity formation prevented further densification. These porosities were probably due to the release of oxygen during sintering.  相似文献   

5.
Aluminum nitride (AlN) ceramics with the concurrent addition of CaZrO3 and Y2O3 were sintered at 1450-1700 °C. The degree of densification, microstructure, flexural strength, and thermal conductivity of the resulting ceramics were evaluated with respect to their composition and sintering temperature. Specimens prepared using both additives could be sintered to almost full density at relatively low temperature (3 h at 1550 °C under nitrogen at ambient pressure); grain growth was suppressed by grain-boundary pinning, and high flexural strength over 630 MPa could be obtained. With two-step sintering process, the morphology of second phase was changed from interconnected structure to isolated structure; this two-step process limited grain growth and increased thermal conductivity. The highest thermal conductivity (156 Wm−1 K−1) was achieved by two-step sintering, and the ceramic showed moderate flexural strength (560 MPa).  相似文献   

6.
《Ceramics International》2016,42(10):11519-11524
AlN ceramics have been prepared with CeO2 as a sintering aid at a sintering temperature of 1900 °C. The effect of CeO2 contents on the microstructure, density, thermal conductivity and hardness was investigated. Addition of CeO2 exerted a significant effect on the densification of AlN ceramics and hence on the microstructure. Thermal conductivity of AlN ceramics increased with CeO2 content and was greater than that of Y2O3-doped AlN ceramics at a similar sintering temperature. The resulting AlN ceramics with 1.50 wt% of CeO2 had the highest relative density of 99.94%, thermal conductivity of 156 W m−1 K−1 and hardness of 72.46 kg/mm2.  相似文献   

7.
The reaction process between MgSiN2 SiO2 and Si3N4 was investigated by analyzing the composition change of the powder mixture of 61 wt% MgSiN2, 34 wt% SiO2 and 5 wt% α-Si3N4 after heat treatment at different temperatures. The phase and chemical compositions of the grain boundary phase in the silicon nitride ceramic was analyzed by x-ray diffraction, transmission electron microscope, and energy-dispersive x-ray spectroscopy. The results demonstrated that MgSiN2 reacted with the surface silica and Si3N4 to form Mg–Si–O–N liquid phase, which promoted the consolidation densification of silicon nitride powders through liquid-phase sintering mechanism. The amount of Mg–Si–O–N glass boundary phase using MgSiN2 as additives is much less than that using the same amount of MgO additive, owing to the lower oxygen concentration and higher nitrogen content.  相似文献   

8.
For low-temperature sintering, mixtures of AlN powder doped with 3.53 mass% Y2O3 and 0–2.0 mass% CaO as sintering additives were pulverized and dispersed in a vertical super-fine grinding mill with very small ZrO2 beads. The particle sizes achieved ranged between 50 and 100 nm after grinding for 90 min. The mixtures were then fired at 1000–1500 °C for 0–6 h under nitrogen gas pressure of 0.1 MPa. All nano-sized powders showed pronounced densification from 1300 °C as revealed by shrinkage measurement. The larger amounts of sintering additives enhanced AlN sintering at lower temperatures. Densified AlN ceramics with very fine and uniform grains of 0.3–0.4 μm were obtained at a firing temperature of 1500 °C for 6 h.  相似文献   

9.
The effects of boron and/or carbon on the densification of AlN were investigated. Sintering was promoted by adding the additives simultaneously. Thermo-chemical analysis indicated that a liquid phase composed of aluminum and boron were formed by the borothermal reduction of Al2O3 and AlN. Liquid phase sintering is believed to be the reason for the enhanced densification of AlN. The present investigation proposes a method to densify AlN using non-oxide sintering additives having high melting temperature (>2000 °C). The deterioration of AlN refractory is expected to be suppressed by preventing the formation of oxide grain boundary network which is vulnerable to corrosion caused by molten metal.  相似文献   

10.
Sintering of the AlN powder synthesized by a combustion synthesis method, which was developed recently by the present authors, was studied by using a microwave sintering technique. A single mode microwave cavity was used and an insulation package with a simple configuration was developed. A high sintering temperature (1900 °C or higher) and a stable and uniform heating were readily achieved. A temperature measurement technique using a thermocouple with extrapolation was established to obtain the sintering temperature. A percent theoretical density of 99.5% and a thermal conductivity of 186 W/m K were obtained for a specimen which was sintered at 1900 °C with a soaking time of 30 min and 3 wt.% of Y2O3 added. The effects of sintering aid (i.e., Y2O3) and sintering temperature on densification, microstructure and thermal conductivity of the sintered specimens were investigated.  相似文献   

11.
The sintering behaviour of a glass obtained by Municipal Solid Waste Incinerator (MSWI) bottom ash (WG) was investigated and compared with a Na2O–MgO–CaO–SiO2 composition (CG). The sintering activation energy, Esin, and the energy of viscous flow, Eη, were evaluated by dilatomeric measurements at different heating rates. The formation of crystalline phases was evaluated by Differential Thermal Analysis (DTA) and X-Ray Diffraction (XRD), and observed by Scanning Electron Microscopy (SEM) and Transition Electron Microscopy (TEM). In CG, the sintering started at ≈1013 dPa s viscosity and Esin (245 kJ/mol) remains constant in the measured range of shrinkage, up to 9%. In WG the densification started at ≈1011 dPa s, Esin resulted to be 395 kJ/mol up to 5% shrinkage, 420 kJ/mol at 8% and 485 kJ/mol at 10% shrinkage. The sintering rate decreased due to the beginning of the pyroxene formation and the densification stopped in the temperature range 1073–1123 K after formation of 5 ± 3% and 13 ± 3% crystal phase, at 5 and 20 K/min, respectively. Higher densification and improved mechanical properties were obtained by applying the fast heating rate, i.e. 20 K/min.  相似文献   

12.
Aluminum nitride powders were synthesized by carbothermal reduction-nitridation method using Al(OH)3, carbon black and Y2O3 as raw materials. The change of phase, microstructure and densification during the AlN synthesis and sintering process were investigated and the effects of Y2O3 was discussed. The results showed that Y2O3 reacted with Al2O3 to form yttrium aluminates of YAlO3 (orthorhombic and hexagonal phases), Y4Al2O9 and Y3Al5O12 at the low temperature of 1350 °C. YAlO3 could firstly be transformed into Y2O3 and then completely into YN when the firing temperature and holding time increased. However, YN could be oxidized into Y2O3 again after the carbon removal at 700 °C in the air atmosphere. There were two ways generating AlN when adding Y2O3 and the possible mechanism was proposed. Y2O3 from YN oxidation favored the densification of AlN ceramics because the liquid had better flowability and distribution in the sintering process at 1800 °C.  相似文献   

13.
cBN–TiN–TiB2 composites were fabricated by spark plasma sintering at 1773–1973 K using cubic boron nitride (cBN) and SiO2-coated cBN (cBN(SiO2)) powders. The effect of SiO2 coating, cBN content and sintering temperature on the phase composition, densification and mechanical properties of the composites was investigated. SiO2 coating on cBN powder retarded the phase transformation of cBN in the composites up to 1873 K and facilitated viscous sintering that promoted the densification of the composites. Sintering at 1873 K, without the SiO2 coating, caused the relative density and Vickers hardness of the composite to linearly decrease from 96.2% to 79.8% and from 25.3 to 4.4 GPa, respectively, whereas the cBN(SiO2)–TiN–TiB2 composites maintained high relative density (91.0–96.2%) and Vickers hardness (17.9–21.0 GPa) up to 50 vol% cBN. The cBN(SiO2)–TiN–TiB2 composites had high thermal conductivity (60 W m−1 K−1 at room temperature) comparable to the TiN–TiB2 binary composite.  相似文献   

14.
The sintering behavior of Ce0.9Gd0.1O1.95 (CGO) tape cast layers with different porosity was investigated by an extensive characterization of densification, microstructural evolution, and applying the constitutive laws of sintering. The densification of CGO tapes associates with grain coarsening process at the initial sintering stage at T < 1150 °C, which is mainly influenced by small pores and intrinsic characteristics of the starting powders. At the intermediate sintering stage, densification is remarkably influenced by large porosity. Moreover, the sintering constitutive laws indicate that increasing the initial porosity from 0.38 to 0.60, the densification at the late stage is thermally activated with typical activation energy values increasing from 367 to 578 kJ mol−1. Similar effect of the porosity is observed for the thermally activated phenomena leading to grain growth in the CGO tapes. The analysis of sintering mechanisms reveals that the grain growth behavior at different porosity can be described using an identical master curve.  相似文献   

15.
In this study, chromium carbide (Cr3C2) was selected as the sintering additive for the densification of boron carbide (B4C). Cr3C2 can react with B4C and form graphite and CrB2 in situ, which is considered to be effective for the sintering of B4C composites. The sintering behavior, microstructure development and mechanical properties of B4C composites were studied. The density of B4C composite increased with the increase of Cr3C2 content and sintering temperature. The formation of liquid phase could effectively improve the densification of B4C composites. The abnormal grains began to appear at 2080 °C. The bending strength could reach 440 MPa for the 25 wt% and 30 wt% Cr3C2 samples after sintering at 2070 °C.  相似文献   

16.
When synthesizing polycrystalline cubic boron nitride (PcBN) at normal pressure, cBN had a trend of hexagonal transformation, which reduces the hardness and strength of PcBN. The cBN-Ti-Al composite was prepared by spark plasma sintering with introducing Ti and Al to absorb hexagonal boron nitride (hBN) transformed from cBN. By the results of X-ray diffraction (XRD), Ti and Al reacted with BN and forming TiN, TiB2, and AlN, which combined cBN as the binder by chemical bonding. The mechanical properties of the prepared composite increased as the increment of sintering temperature. The threshold temperature for preparing composite without hBN phase was at 1400 °C. The composite with optimal mechanical properties was prepared at 1400 °C, and the relative density, the bending strength, hardness, and fracture toughness were 98.9 ± 0.1%, 390.7 ± 4.4 MPa, 14.1 ± 0.5 GPa, and 7.6 ± 0.1 MPa·m0.5, respectively.  相似文献   

17.
97.4% of theoretical density was obtained for boron carbide (B4C) ceramics by heating up to 2226 °C in an Ar atmosphere containing gaseous Al and Si species without external pressure. Impurities and secondary phases in the sintered B4C samples were examined by X-ray fluorescence and X-ray diffraction analyses respectively, which revealed that both Al and Si elements infiltrated into the green compacts and reacted with B4C to form SiC, Al4C3 and Al4SiC4 during the sintering. Triple junctions observed in the polished surfaces of the densified samples were filled by the secondary phases, indicating formation of liquid phase during heating. Dilatometric measurements at a constant heating rate in the Ar gas with the metallic gas species demonstrated that the shrinkage started at around 1700 °C, which was the liquid-phase formation temperature for the system reported in the previous studies. It was supposed that the liquid phase might be responsible for the densification.  相似文献   

18.
Cubic boron nitride (cBN) compacts, using 15 wt.% Al and 20 wt.% AlN respectively as additives, were sintered in the temperature range of 1300–1700 °C for 20 min under high pressure of 5.0 GPa. The hardness, microstructure, phase composition and cutting performance of the high pressure sintered samples were investigated. A liquid phase sintering and reaction process was observed in the cBN–Al system, which leads to the formation of AlN and AlB2 as confirmed by X-ray diffraction (XRD) in the sintered compacts. Scanning electron microscopy (SEM) analysis shows that the samples have a homogeneous microstructure. The hardness decreases with increase of sintering temperature and reaches the highest Vickers hardness of 32.1 GPa at 1350 °C. While in the cBN–AlN system, AlN grains agglomerate heavily at temperature below ~ 1500 °C. As the sintering temperature increasing, Al2O3 appeared and the AlN agglomeration disappeared gradually. A highest cBN–AlN composite hardness of 29 GPa was achieved when sintered at 1600 °C. Turning tests showed that cBN compacts with 15 wt.% Al as the additive has a longer tool life as compared to that with 20 wt.% AlN. Our results indicated that cBN–Al system is more favourable to obtain well-sintered cBN compacts comparing with the cBN–AlN system.  相似文献   

19.
We explain the basic mechanism of the low-temperature sintering called reactive liquid-phase sintering. The mechanism involves the presence of a low-temperature liquid phase that must be able to directly or indirectly accelerate a reaction with the matrix phase. The mechanism is explained in details for the case of the low-temperature sintering of BaTiO3, which was sintered to more than 95% of relative density in 15 min at 820 °C. We have applied reactive liquid-phase sintering to a number of different compounds with very different crystal-chemistry characteristics, and managed to sinter them as much as 400 °C below their original sintering temperatures. A thorough understanding of this sintering mechanism makes it possible to closely control the sintering behavior.  相似文献   

20.
The effects of slow-cooling and annealing conditions on dielectric loss, thermal conductivity and microstructure of AlN ceramics were investigated. Y2O3 from 0.5 to 1.25 mol% at 0.25% increments was added as a sintering additive to AlN powder and pressureless sintering was carried out at 1900 °C for 2 h in a nitrogen flowing atmosphere. To improve the properties, AlN samples were slow-cooled at a rate of 1 °C min−1 from 1900 to 1750 °C, subsequently cooled to 970 °C at a rate of 10 °C min−1 and then annealed at the same temperature for 4 h. AlN and YAG (5Al2O3/3Y2O3) were the only identified phases from XRD. AlN doped with 0.5 and 0.75 mol% Y2O3 had a low loss of <2.0 × 10−3 and a high thermal conductivity of >160 W m−1 °C−1.  相似文献   

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