网民、网络媒体和传统媒体的关系

网民在网络上所花费时间不断加大的同时,在传统媒体上所花费的时间被进一步削弱,与两年前相比,51.7%的网民观看电视的时间明显减少。与此相反,网民浏览网络视频     

NGN、软交换和IMS的关系

下一代网络(NGN)是业界的热点话题,其中关于IP多媒体子系统(IMS)、软交换(Softswitch)的定位和未来发展方向需要达成共识。软交换和IMS都是属于NGN的业务网。软交换从设备的实现而言,应该可以平滑演进到IMS,但是从网络的演进而言,由于软交换将主要支持传统的公共交换电话网/综合业务数字网(PSTN/ISDN)业务,而它的基本业务和补充业务都是在本地实现,因此要实现向IMS的平滑演进有一定难度。     

论LTE-SINR与电平、邻区、负荷的关系

在日常优化过程中我们发现UE在信号很强的情况下SINR值低,下载速率也会很低,UE在信号较弱的情况下(不小于-110dbm)SINR值高也能保持较高的下载速率,文章结合ATU测试的大数据对主小区电平、邻区个数、主邻小区电平差值、主邻小区干扰及负荷情况与SINR的关系进行研究,助力于快速、精准地进行SINR优化,提升下载速率及用户感知。     

肺、结肠和直肠癌患者血清瘦素的表达及意义

目的研究肺癌、结肠癌和直肠癌患者血清瘦素（Leptin）的表达变化，探讨其与患者预后的关系。方法采集肺癌、结肠癌、直肠癌患者及正常对照者的血清样品，采用相应试剂盒检测血清Leptin、癌胚抗原的水平，采用全自动生化分析仪检测反映脏器功能、代谢功能的相关生化指标变化。结果与正常对照者相比，三种肿瘤患者血清Leptin显著升高，癌胚抗原、脏器功能指标和代谢指标均有不同程度变化。结论Leptin可能作为评价恶性肿瘤患者状况的新指标。     

DTV图像清晰度与图像格式变换、同心度和重显率的关系

针对基于电子束扫描的CRT电视显像管和基于像素寻址的LCD、PDP、DLP和LCoS等固有分辨力显示器，分析了它们显示数字电视图像的区别，重点研讨了固有分辨力显示器像素阵列、同心度、重显率和图像格式变换对重显图像清晰度的影响，给出了部分实验结果，提出了改善数字电视图像清晰度的建议。     

论ISO9000、6西格玛、TQM的关系与区别

这篇文章论述了ISO9000质量管理体系标准、6西格码管理方法、全面质量管理之间的关系与区别.     

试论信息产业与高新技术产业、知识产业的关系

目前,各种书籍、报刊、杂志等有关信息产业与高新技术产业、知识产业之间的关系众说纷纭,没有统一的认识。本文首先从信息产业出现的原因角度将信息产业进行界定,然后分析了信息产业与高新技术产业、知识产业的关系。     

云计算和大数据与博物馆的关系

在当前的互联网时代发展过程中,有不计其数的设备、企业及其个人每时每刻都在获取和产生新的不同数据,尤其在互联网企业的日常运行过程中,就会生成和累计用户的很多网络数据。云计算技术作为一个新兴的发展技术,在处理数据应用的过程中,发挥着重要作用,并且取得了较好的发展成果。云计算和大数据的发展是密不可分的,并且在持续的发展过程中,逐渐应用到了博物馆的发展和管理过程中。     

直播卫星、有线数字电视和地面数字电视关系处理的探讨

安全、优质地传输广播电视节目,提高覆盖质量,确保政令畅通,保障国家信息、文化安全;在构建和谐社会,尤其是加快“村村通”建设的进程中满足城乡居民的精神文化需求是三者发展和服务的宗旨。     

癫痫患者血清细胞因子水平与脑电图的相关性探讨

目的：探究癫痫患者血清细胞因子水平同脑电图之间存在的相关性。方法：将2015年4月~2016年4月期间我院收治的56例癫痫患者作为试验组,再选取同期在我院进行体检的56名健康人作为对照组,全部患者都给予常规脑电图检查。结果：试验组人员的血清肿瘤坏死因子、白细胞介素以及脑电图检测结果等都明显的比对照组高,差异具有统计学意义（P＜0.05）;其中癫痫患者的血清肿瘤坏死因子及白细胞介素之间具有显著的正相关（P＜0.05）。结论：癫痫患者一般具有细胞免疫功能紊乱的症状,免疫细胞CD8、CD4及肿瘤坏死因子（TNF）-α与白细胞介素（IL）-2等均为影响癫痫病情的关键介质。其中脑电图改变同免疫细胞CD8、CD4及TNF-α与IL-2水平等紧密相关,距离癫痫发作期越近,有关免疫细胞及细胞因子异常水平则越高,而同期脑电图异常率则越高。     

屏锥式玻璃封接应力与燃点可靠性关系的分析

玻璃封接后存在内应力,会降低灯的稳定性,使其在使用过程中出现炸裂.本文对屏锥式封接玻璃应力与燃点可靠性关系进行了试验和分析,得出一些新的结果,提供给同行作为借鉴.     

Creep, stress relaxation, and plastic deformation in Sn-Ag and Sn-Zn eutectic solders

Because of the high homologous operation temperature of solders used in electronic devices, time and temperature dependent relaxation and creep processes affect their mechanical behavior. In this paper, two eutectic lead-free solders (96.5Sn-3.5Ag and 91Sn-9Zn) are investigated for their creep and stress relaxation behavior. The creep tests were done in load-control with initial stresses in the range of 10-22 MPa at two temperatures, 25 and 80°C. The stress relaxation tests were performed under constant-strain conditions with strains in the range of 0.3-2.4% and at 25 and 80°C. Since creep/relaxation processes are active even during monotonie tensile tests at ambient temperatures, stress-strain curves at different temperatures and strain rates provide insight into these processes. Activation energies obtained from the monotonic tensile, stress relaxation, and creep tests are compared and discussed in light of the governing mechanisms. These data along with creep exponents, strain rate sensitivities and damage mechanisms are useful for aiding the modeling of solder interconnects for reliability and lifetime prediction. Constitutive modeling for creep and stress relaxation behavior was done using a formulation based on unified creep plasticity theory which has been previously employed in the modeling of high temperature superalloys with satisfactory results.     

Mechanical stress control in a VLSI-fabrication process: a method for obtaining the relation between stress levels and stress-induced failures

An ideal fabrication process is designed to minimize mechanical stress in semiconductor devices and to improve device reliability. Mechanical stress levels were predicted by in-house simulations supported by a thin-film database. These stress levels were correlated with stress-induced defects by TEM analysis supported by fail bit addressing on matured megabit SRAMs. Amorphous-doped silicon film with various annealing temperatures were used for the gate electrode to change the mechanical stress in devices and to get the direct relationship between predicted stress levels and stress related defects. The authors describe brief guidelines for suppressing dislocations in the small geometry shallow-trench isolation process utilizing this system. Polysilicon thickness in the W-polycide gate electrode is designed to minimize mechanical stress in the gate oxide and to suppress the gate oxide failure in probe and class tests. Moreover, critical stress generates dislocations during post source/drain ion implantation anneal obtained by a ball indentation method. This indicated that lower temperature anneal is effective in suppressing the dislocations. A two-step anneal was introduced to suppress dislocations and to enable higher ion activation.     

温度与线缆性能的关系

阐述了网络布线性能评判指标——信道带宽的基本知识，分析影响带宽的主要噪声来源为近端串扰和衰减串扰比。进而通过TIA5类线缆标准和TIA6类线缆标准的比较，分析影响带宽的因素，通过对温度效应的阐述，明晰了温度对布线系统线缆性能的影响，最后提倡使用低衰减的布线系统。     

天线与转台之间的坐标关系

雷达天线在测试或者使用中,由于天线装在转台上,它的电气中心不可能与转台坐标系的原点重合,转台坐标值与天线坐标值不相等.本文给出了天线与转台之间的坐标关系,在天线的精确测量中,可以依据此关系把测试所得的转台坐标值变换为天线坐标值,同样在雷达应用中,也可以把已知的天线波束坐标值变换到转台(伺服)坐标值.     

Relation between defect generation, stress induced leakage current and soft breakdown in thin (<5 nm) oxides

The normalized stress induced leakage current (SILC) measured when the oxide is subjected to low level constant-current stresses shows a tendency towards saturation at large charge fluences. To investigate the origin of this saturation, the degradation of the oxide has been analyzed using two independent methods: SILC data analysis and a two-step stress test. The results show that, although under low stress currents the SILC saturation is observed, the degradation (i.e., the generation of defects) proceeds until the soft breakdown (SBD) event takes place. The implications for the use of SILC data as degradation monitor are analyzed.     

基于MCU和CPLD的微型动态应力存储测试系统

为了解决车辆履带上的动态应变压力测试问题,设计了一套微型应力存储测试系统。对于应变压力传感器采用电桥法测试应力并应用存储测试技术设计了整套测试系统。使用单片机和CPLD作为系统的主控芯片完成系统的微功耗设计,并设计了模拟电路部分和数字电路部分。经过冲击梁实验表明此测试系统和理论计算的误差在7%以下,可以对车辆履带上的应力进行测量。     

ISO9000族标准与TQC的关系

就ISO9000族标准与TQC的关系作了分析比较。     

激光辐照下铝膜反射镜温升和热应力的计算

分析了激光对以K9玻璃为基体的铝膜反射镜的加热问题,将铝膜作为平面热传导,K9玻璃基体作为三维热传导,用有限元法计算了温度分布和K9玻璃基体的热应力分布,讨论了反射率和激光传输距离对温升和热应力的影响。结果表明,二者对温升和应力的影响很大,铝膜反射率增大,温升和应力变低,激光传输距离增加,温升和应力也变低。铝膜的破坏阈值大于K9玻璃的破坏阈值,在确保铝膜反射率的同时,根据K9玻璃基体应力小于其抗拉强度来选择合适的传输距离,可避免反射镜破损。