交叉耦合盒式结构微带带通滤波器设计

设计了一种交叉耦合盒式结构微带带通滤波器。采用耦合矩阵方法对交叉耦合盒式结构带通滤波器频率响应特性进行了分析,并且在此基础上研制了一种基于E型双模谐振器的非对称响应带通滤波器。滤波器中心频率为6.4 GHz,带宽为0.8 GHz,最小带内插损为1.9 dB,两个传输零点分别位于4.5 GHz 和7.6 GHz,上下阻带抑制度分别大于35dB、47dB。滤波器有效尺寸约为0.34λg *0.43λg。该滤波器具有结构紧凑、带外抑制度高、选择性高的优点。     

基于缺陷地抑制高阶谐波的带通滤波器设计

采用微带线设计的平行耦合滤波器(MCL-BPF)在通带以外往往产生谐波,出现寄生频段。利用缺陷地结构(Defected Ground Structure,DGS)的单极点带阻特性和慢波效应可以改善寄生通带,抑制谐波输出。对2.4GHz的传统微带平行耦合滤波器和改进型带通滤波器进行了仿真设计与加工测试。实测结果与仿真数据良好吻合,所提出基于斜哑铃型DGS的带通滤波器(S-DGS-BPF)可抑制至四阶谐波,抑制度达到-22dB以下,阻带为3-10GHz,中心频率处回波损耗为-26.93dB。并且改进型滤波器的尺寸缩小了约10%。     

一种基于DGS和EBG混合结构的毫米波滤波器设计

设计了一款可应用于毫米波频段（22.5～29.5 GHz）的小型化、高性能带通滤波器。首先利用羊角型DGS结构的谐振特性,在基片集成波导（Substrate integrated waveguide,SIW）的高通通带内产生阻带和低通特性;之后在滤波器输入微带线上耦合U型电磁带隙结构（Electromagnetic band gap,EBG）,利用该结构产生的两传输零点之间的带宽可以调整的特性,来保证滤波器通带带宽及提供高带外抑制;最后利用电磁仿真软件HFSS 13.0对滤波器进行仿真与优化。实测结果表明,该滤波器整体尺寸为10 mm×5 mm,中心频率为26 GHz,3 dB截止频率分别为22.1 GHz和29.3 GHz,带宽为7.2 GHz,相对带宽达到了28%,滤波器的插入损耗为1 dB,回波损耗优于15 dB,上、下边带带外抑制均优于25 dB,可应用于毫米波频段无线通信系统中。     

小型化宽频带宽阻带微带滤波器的设计

目前研究宽频带微带滤波器的文献很多,但普遍不能同时具有宽频带和宽阻带的性能,且带内回波损耗大,带外抑制差。为此,提出了一种新型的宽频带微带滤波器。该滤波器采用在E型阶跃阻抗谐振器( SIR)中引入U型结构的方法,实现其宽频带宽阻带的性能。对滤波器进行仿真、加工与实测,仿真结果与实测结果吻合良好。加工得到的滤波器3 dB带宽为7.1 GHz,低于-20 dB的高频阻带为9.3 GHz,带内回波损耗低于-23.2 dB,实物尺寸为15 mm伊8.5 mm,具有小型化的特点。实测数据表明,提出的滤波器具有良好的性能,在工程领域具有实际的应用价值。     

基于T型枝节加载SIR的双频微带滤波器的设计

针对当前通信系统需要滤波器支持多频段、小型化和高性能等要求,提出了一种基于T型枝节加载SIR的频率独立可控双频微带滤波器结构。针对该谐振器,利用提出的特殊电耦合结构实现滤波器的小型化,并引入零度馈电结构构造传输零点来改善阻带抑制,最终得到覆盖WLAN 2.4 GHz和WLAN 5.2 GHz两个频段且占用尺寸仅为16.5 mm×21.7 mm的双频微带带通滤波器。由仿真结果显示,两个通带的中心频率分别为2.45 GHz和5.2 GHz,带内最小插入损耗分别为0.35 dB和0.47 dB,带内最小回波损耗分别为-44 dB和-34.8 dB,3 dB相对带宽分别为28.9%和11.3%,阻带抑制也因引入三个传输零点而大大改善。该滤波器结构整体尺寸小、插损低、频带宽且带外抑制特性好,具有一定的实际应用价值。     

一种基于正方环形谐振器的新型宽带带通滤波器

本文设计了一种紧凑型、宽通带、宽阻带的微带带通滤波器。该滤波器的设计是基于带有两个开路调节支节的正方谐振环。基于紧凑性的考虑,改变了传统方环谐振滤波器的馈电点和开路调节支节的位置,以便对谐振环进行折叠处理。这种改变并不影响谐振环的奇偶模特性。在输入和输出端口,通过两个叉指耦合结构对滤波器进行馈电,这种馈电方式增加了滤波器阻带的带宽和抑制度。滤波器的中心频率为4GHz,相对带宽为45％,通带内的回波损耗小于-12dB,群时延小于0．8ns,1-2．9GHz阻带抑制度大于12dB,5．3～7GHz阻带抑制度大于18dB。     

基于DGS 与半集总结构的新型LTCC 超宽带滤波器

设计了一款基于低温共烧陶瓷(LTCC)技术的新型超宽带(UWB,)带通滤波器.该款滤波器结合了半集总高通结构与缺陷地(DGS)结构,利用半集总结构实现截止频率为3.1GHz的高通滤波器,再结合DGS在高端产生阻带,从而实现通带为3.1～ 10.6GHz的带通滤波器,尺寸仅为3.2mm×1.6mm×1.2mm.实测结果表明:插入损耗＜1.5dB,反射损耗＜12dB,群时延＜0.8ns,带外抑制＞15dB(11.5～17GHz).测试与仿真结果较为吻合.此种LTCC滤波器结构具有尺寸小、插损小、群时延小等优点,而且结构简单,带宽和中心频率容易控制,相对带宽可做到150％以上,特别适合用于极宽带通信系统的频率选择.     

一种S波段小型宽带微带带通滤波器优化设计

基于并联短截线谐振器与联接线变换器构成的传统微带带通滤波结构,提出了一种工作在S波段的改进型宽带带通滤波器。以三阶结构为例,通过将两侧并联短截线进行弯折,形成耦合线结构;将中间并联短截线进行拆分,变为并联的短路线和开路线,实现了在通带性能基本不变的前提下,获得阻带可调控的传输零点,进而提高过渡带陡峭度。为了进一步抑制阻带,在滤波器两侧级联扇形微带低通滤波结构,改善阻带性能。利用ADS和HFSS仿真软件对滤波器结构进行仿真优化设计,并最终进行了实物加工和测试。实测结果表明,通带内2~4 GHz插入损耗小于0.7 dB,回波损耗大于17 dB,通带外4.6~6.5 GHz 阻带抑制达到20 dB 以上。     

波导带通滤波器与微带转换装置的设计

利用三维仿真软件HFSS首先设计了K波段7阶电感E面带通波导滤波器,以及波导-微带转换器.其中波导滤波器的中心频率为19 GHz,带宽为3 GHz,带内损耗小于0.1 dB,端口反射小于-20 dB;而波导-微带的转换器在16～20.8 GHz的带宽内端口反射小于-20 dB,带内损耗小于0.1 dB.然后将两者有效结合为一体,其工作带宽为17.5～20.5 GHz,带内损耗为0.3 dB,端口反射小于-15 dB,带外抑制小于-30 dB,可以满足实际系统应用的需求.     

基于微带-槽线过渡的超宽带滤波器

基于电磁耦合微带-槽线过渡结构,设计了一个结构紧凑、具有陷波和超宽阻带的超宽带带通滤波器。通过嵌入1个终端短路的阶跃阻抗微带枝节和底层的槽线耦合产生1个可调节的陷波;同时,在上层微带输出端添加开路枝节和扇形结构获得超宽阻带的特性。该超宽带带通滤波器的中心频率为6.85 GHz,3dB通带为1.95~13.15GHz,相对带宽达到148%。与以往的超宽带带通滤波器相比,其具有结构简单、尺寸小和带外抑制良好等特点,仿真和测试结构吻合较好。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.