超小型、高性能L波段LTCC滤波器设计

设计了一款工作于L波段的LTCC滤波器。利用LTCC多层技术,设计双层耦合带状线谐振腔,采用电感反馈的三谐振腔结构,减小滤波器体积,设计时通过增加零点,提高滤波器带外阻带性能。在2.4~2.5GHz频段范围内,实测插入损耗小于1.2dB,在1.7~1.9GHz、7.2~7.5GHz带外频段内,衰减大于20dB,与仿真结果吻合较好。滤波器最终体积为1.6mm×0.8mm×0.6mm。     

微型LTCC Wilkinson功率分配器的设计＊

本文提出一种基于LTCC技术的高性能微型Wilkinson功率分配器的设计方法。从Wilkinson功分器的奇偶模阻抗理论出发,将功分器设计转化为在偶模下求解阻抗比为2：1的阻抗变换和在奇模下求解阻抗匹配的问题,采用 LC 阻抗变换节取代传统四分之一波长传输线,减小了功分器体积。通过ADS构建原理图并优化,运用HFSS进行拟合,最后通过LTCC工艺加工制造,实测曲线与HFSS仿真曲线吻合较好,在2.7GHz~3.0GHz的带宽内插入损耗小于3.2dB,隔离度大于20 dB,输入端口反射系数小于-20dB,尺寸仅为3.2mm×1.6mm×0.9 mm。     

一种LTCC小型化双重折叠1/4模基片集成波导滤波器设计

提出了一种新型基于低温共烧陶瓷技术的双重折叠四分之一模基片集成波导谐振腔结构,并利用该谐振腔设计了一种垂直排布腔体的两阶滤波器。由于采用了LTCC技术、半模技术以及折叠技术,滤波器的尺寸得以大幅减小,与原始腔体相比,面积减小了大约93.75%。滤波器工作在1.55GHz,插入损耗1.2dB,回波损耗小于-11.5dB,性能较好。     

Ka波段LTCC基片集成圆腔滤波器设计

将低温共烧陶瓷(LTCC)技术与基片集成波导圆腔(SICC)技术相结合,设计了一个Ka波段的四阶带通滤波器。该滤波器在28.25~30.25 GHz的通带内,插入损耗小于1.3 dB,回波损耗大于31 dB,LTCC多层基板布线的特性使得SICC谐振腔滤波器从二维平面走向三维立体,在保持滤波器高性能的同时大大缩小了尺寸,并且谐振模TM_(010)模的选用以及共面波导探针形式的输入输出,进一步减小了滤波器的体积,最终尺寸仅为3.5 mm×3.5mm×1.152 mm,与传统同类型的平面滤波器相比较,所占基板面积减小了50%以上。     

一种基于LTCC 技术的脊基片集成波导（SIW）到微带的过渡结构

介绍了一种基于LTCC 技术的脊基片集成波导（SIW）到微带的过渡结构。将传统脊波导到微带过渡的设计思路,运用于基于LTCC 技术的基片集成波导（SIW）到Rogers5880 基片微带的过渡设计中,实现了LTCC SIW 到Rogers5880 基片微带的宽带过渡。从仿真结果可以看出,在25.2GHz 到40GHz 的频带内,回波损耗S11 小于-15dB, 插入损耗优于-0.2dB。     

LTCC基开关驱动低噪放一体化模块设计

基于LTCC技术设计了一款双通道应用的开关、驱动和低噪放一体化模块,利用HFSS对无源器件电感进行仿真,将电感嵌入LTCC基板中,不仅提高了模块的集成度,同时也降低了成本。在1.8~2.1 GHz频段内,ANT-RX通道增益达到23.8 dB,输入驻波比小于1.49,输出驻波比小于1.33,通道隔离大于44 dB,噪声系数小于1.21 dB(含评估板单端损耗约为0.15 dB);ANT-TX通道插入损耗小于0.42 dB(含评估版损耗约0.3 dB),输入输出驻波比均小于1.1。     

Ka 波段LTCC 三维带状线延迟线

首次采用低温共烧陶瓷（LTCC）技术的设计出频率在34.2 GHz 时相位延迟为32λg 和 1λg 的带状线延迟线。 延迟线具有低插损、低色散的特性。由于LTCC 独特的工艺特点,实现结构的小型化和结构紧凑性。文中设计的32λg 和 1λg 延迟线的尺寸分别为7 × 5 × 3 mm3和2 × 1.5 × 3 mm3。最终仿真结果也证明该方案的优越性：对于32λg 延迟线,在 34.2GHz 时插入损耗为3.39dB,在34.1-34.3GHz 频段内插损优于5.068dB,驻波小于2.1;1λg 延迟线,在中心频率34.2GHz 插入损耗为0.316dB, 34.1-34.3GHz 频段上优于0.317dB,驻波小于1.25。     

L 波段带双零点的窄带LTCC 滤波器设计

本文应用LTCC 技术设计了一个L 波段二阶Chebyshev 窄带带通滤波器。该滤波器集成在9 层LTCC 介质中,采用等效集总元件（电容电感)结构,充分利用LTCC 的三维封装结构减小滤波器体积,通过谐振单元中集总元件的串并联产生两个带外传输零点,同时调整谐振单元耦合间距控制带宽。滤波器输入输出利用金属通孔将带状线过渡到微带上。滤波器（带过渡结构）的仿真结果为：中心频率1.42 GHz,1 dB 相对带宽2.1%,插入损耗通带内最低0.5 dB, 回波损耗优于20 dB,整个滤波器体积为：4.5×4×0.87 mm3。     

一种小型化LTCC高通滤波器的设计

提出了一种基于LTCC工艺的集总参数高通滤波器的设计方法,首先采用电路仿真软件ADS设计滤波器电路拓朴结构,再利用电磁场仿真软件HFSS仿真并提取所需的电容与电感。通过优化各元件的大小以及元件之间的相对位置,获得符合指标要求的滤波器结构。该高通滤波器的指标要求为:截止频率大于1.8GHz;2.25~3.75GHz内插入损耗小于2dB,驻波比小于1.5;DC-1.1GHz内插入损耗大于40dB,DC-1.4GHz内插入损耗大于20dB。仿真与实测结果均满足指标要求。     

一种LTCC带通滤波器的设计与实现

设计并实现了一个2阶切比雪夫带通滤波器,采用1/4波长终端短路线作为谐振腔,谐振腔间采用电容耦合实现导纳转换,来达到减小体积的目的.给出了适用于工程应用的设计步骤以及设计公式,滤波器的实际实现采用LTCC技术,结合三维电磁场仿真,设计出一种高抑制、低插损的滤波器,该滤波器中心频率为4 GHz、带宽为400 MHz,插入损耗小于2.3dB.可以广泛应用于导航和通信系统电路中.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.