脉冲真空弧源沉积类金刚石薄膜耐磨特性研究

本文利用脉冲真空弧源沉积技术在Cr17Ni14Cu4不锈钢和Si(100)基体上制备了类金刚石(DLC)薄膜,研究在不同基体偏压下,DLC薄膜的结构与性能.采用拉曼光谱和X射线光电子能谱(XPS)研究DLC薄膜的原子结合状态,利用CSEM销盘摩擦磨损试验机研究其耐磨性,利用HXD1000B显微硬度仪测试其显微硬度,并采用压痕法评价其结合力.研究结果表明:DLC薄膜与基体结合牢固.随着基体偏压的提高,DLC薄膜内sp3键含量增大,薄膜硬度提高.Cr17Ni14Cu4不锈钢表面沉积DLC薄膜后,耐磨性大幅度提高,本文探讨了DLC薄膜的耐磨机理.     

Si3N4薄膜的成分与结构研究

通过PECVD方法,在Si基体表面制备了Si3N4薄膜,给出了XRD、TEM、AES、DPS的分析结果,表明Si3N4是非晶态结构,薄膜的主要成分是Si3N4,SEM分析结果显示Si3N4薄膜与基体材料的结合强度高,薄膜致密性好.     

硅上超薄氧化层的AES和XPS分析

本文利用AES、XPS研究了硅上厚7A～47A的超薄氧化硅膜的化学键态。讨论了无定形SiO_2和Si衬底之间的界面区的化学结构。     

超硬超厚类金刚石薄膜合成研究

采用过滤真空阴极直流弧源(FilteredCathodic Vicuum Arc Deposition,FCVA)方法沉积超硬(＞6000HV)超厚(微米级)的DLC/DLC多层薄膜.通过显微硬度、内应力测量、XPS等方法表明,该薄膜显著优于普通单层薄膜.     

钢铁表面Ni-P-SiC复合镀层的表面形貌及组成

运用SEM,AES和XPS分析了Ni-P-SiC复合镀层的表面形貌及组成,研究显示：Ni-P-SiC镀层的组成为（％）Ni51.01,P29.38,Si3.64,C3.88,O0.75和Fe10．08时,镀层腐蚀能力 较强。     

Structure and Mechanical Performance of Nitrogen Doped Diamond-like Carbon Films

Nitrogen doped diamond-like carbon （DLC：N） films were prepared by electron cyclotron resonance chemical vapor deposition （ECR-CVD） on polycrystalline Si chips. Film thickness is about 50 nm. Auger electron spectroscopy （AES） was used to evaluate nitrogen content, and increasing N2 flow improved N content from 0 to 7.6%. Raman and X-ray photoelectron spectroscopy （XPS） analysis results reveal CN-sp^3C and N-sp^2C structure. With increasing the N2 flow, sp^3C decreases from 73.74% down to 42.66%, and so does N-sp^3C from 68.04% down to 20.23%. The hardness decreases from 29.18 GPa down to 19.74 GPa, and the Young＇s modulus from 193.03 GPa down to 144.52 GPa.     

Pt扩散阻挡层对PZT/Si薄膜化学结构和性能的影响

运用XPS和AES研究了Pt扩散阻挡层对PZT薄膜／Si界面化学结构和性能的影响：在PZT薄膜和Si基底间增加Pt扩散阻挡层，可以抑制TiCx物种和TiSix物种的形成，促进PZT薄膜的形成反应。Pt扩散阻挡层的存在阻断了氧和Si的相互扩散反应，促进PZT物种形成钙钛矿型晶体结构，使得形成的PZT薄膜具有和体相材料相近的高介电常数和铁电性能。     

双离子束溅射制备非晶SiOxNy薄膜的强黄光发射

用双离子束溅射法制备了SiOxNy薄膜,并对薄膜的结构和光致发光(PL)性质进行了研究.XRD和TEM的实验结果表明薄膜是非晶结构;用XPS对样品进行了表征,在397.8eV位置处出现一个对应于N1s的对称峰,表明样品中的N原子主要与Si原子结合,FTIR的实验结果也说明了这一点.光吸收测量结果显示SiOxNy薄膜的光学带隙比Si-SiO2薄膜宽.在225nm波长的激发下,测得在590nm处有强的黄光发射,并利用能带模型讨论了可能的发光机制.     

中频磁控溅射沉积DLC/TiAlN复合薄膜的结构与性能研究

采用中频非平衡磁控溅射沉积工艺,并施加霍尔离子源辅助沉积,在高速钢W18Cr4V及单晶硅基体上制备了梯度过渡的DIE/TiAlN复合薄膜.利用扫描电镜(SEM)、X射线光电子能谱仪(XPS)、显微硬度计、摩擦磨损仪等分析检测仪器对DLC/TiAlN复合薄膜的表面形貌、晶体结构、显微硬度、耐磨性等性能进行了检测分析.实验及分析结果表明:DLC/TrAlN薄膜平均膜厚为1.1μm,由于薄膜中的Al含量较多,使得复合薄膜的表面比DLC薄膜的表面要粗糙一些;通过对复合薄膜表层的XPS分析可知,ID/IG为2.63.由XPS深层剖析可知,DLC/TiAlN薄膜表层结构与DLC薄膜基本相同,里层则与TiAlN薄膜相似.在梯度过渡膜中,复合膜层之间的界面呈现为渐变过程,结合的非常好.DLC/TiAlN薄膜的显微硬度为2030 HV左右.与DLC薄膜显微硬度接近,低于TiAlN薄膜的显微硬度.但是DLC/TiAlN薄膜的耐磨性要好于TiAlN薄膜和DLC薄膜;DLC/TiAlN薄膜的耐腐蚀性能略好于DLC薄膜.     

Si_3N_4球表面DLC膜在干摩擦条件下的摩擦学性能分析

采用非平衡磁控溅射技术在Si3N4球及高速钢基体上制备了类金刚石(DLC)膜。采用UMT-II型球盘式摩擦磨损试验机分别考察了Si3N4球、镀DLC膜Si3N4球及GCr15球的摩擦学性能,并分析了不同滑动速度和载荷下Si3N4球表面DLC膜的摩擦学性能。研究结果表明:Si3N4球的摩擦系数及磨损率约为GCr15球的一半,但因Si3N4球脆性较大,在摩擦过程中摩擦接触表面容易剥落;Si3N4球表面镀DLC膜能有效地改善Si3N4球脆性大的弱点,并具有良好的减摩作用;Si3N4球表面DLC膜所组成摩擦副的平均摩擦系数随着载荷的增加而增大;随着速度的增加摩擦副的摩擦系数先增大而后减小,滑动速度对摩擦副摩擦系数的影响比载荷明显。实验结果表明Si3N4球表面镀DLC膜适合于高速轻载的工况。     

Auger electron spectroscopy depth profiling studies on stationary and rotated samples of a new model metal/semiconductor multilayer structure

Multilayer structures for application in microelectronics are becoming increasingly complex. A sputter deposited multilayer structure composed of chromium, nickel and silicon layers with a total thickness of 310 nm on a smooth silicon substrate was characterized by transmission electron microscopy (TEM) and by Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) depth profiling. AES depth profiles of the Ni/Cr/Si multilayers were obtained with Ar⁺ ion bombardment at various angles of incidence using stationary and rotated samples. In some cases a strong influence of semiconductor structure on the experimentally obtained metal-metal and metal-semiconductor interface widths was observed. Owing to ion beam induced Si(LVV) Auger electrons in the crater wall of the Ni/Cr/Si sample, a distortional influence on depth resolution during simultaneous AES analysis and ion sputtering was found. Silicide formation during sputtering at the silicon-metal interfaces was confirmed by XPS. The measured compositional depth profiles are explained with respect to the influence of polycrystalline metallic and amorphous semiconductor structures; the effects of ion beam induced topography, atomic mixing and silicide formation are discussed.     

XPS and TEM study of W-DLC/DLC double-layered film

A double-layered film of tungsten-containing diamond-like carbon (W-DLC) and DLC, (W-DLC)/DLC, was investigated. A film of 1.6 µm in thickness was deposited onto silicon substrate. The investigate double-layered coating was deposited by using the combination of PECVD and co-sputtering of tungsten metal target. Structure, interface and chemical bonding state of the investigated film were analyzed by Transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS). From the results of the analyses, the structure of double-layered film is that amorphous phase of carbon is continued from DLC to W-DLC and tungsten metal clusters are dispersed in W-DLC layer.     

Analysis on Structure and Properties of Diamondlike Carbon Films from Ion Beam Deposition

Diamondlike carbon (DLC) films from a primary ion beam deposition system, were examined using nanoindentation, SEM, AES, XPS, and Raman Spectroscopy. The films have hardness values ranging from 21 to 29 GPa. The results of SEM and AES show that the films are predominantly carbon without any crystalline features, and that nitrogen is incorporated as nitrogen is used as the ion beam source. XPS, and Raman Spectroscopy confirm that the films are amorphous carbon with a combination of sp³ with sp² bonding. It is concluded that DLC films can be directly deposited on steel using a single ion beam to sputter the solid target, and the structure and properties of DLC largely depend on ion beam source.     

Characteristics and mechanical properties of titanium-containing diamond like carbon films deposited by cathodic arc evaporation

Depositions of titanium-containing diamond-like carbon (Ti-DLC) films were conducted by mixing C+ and Ti+ plasma streams originated from cathodic arc plasma sources in argon (Ar). The deposition was processed at Ti target current ranging from 20 Amp to 70 Amp. Film characteristics were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS). Film microstructures were evaluated using field emission scanning electron microscopy (FEGSEM), an atomic force microscope (AFM), X-ray diffractometry (XRD) and high-resolution transmission electron microscopy (HRTEM). Mechanical properties were investigated by using a nanoindentation tester and ball on disc wear test. Results shows that surface roughness (Ra) of the films ranged between 2.4 and 7.2 nm and roughness increased relative to the increase in Ti target current. The FESEM studies showed that the surface micrographs of Ti-DLC films revealed a cauliflower-like microstructure and the cross-sectional micrograph revealed a snake-skin like structure. HRTEM studies showed that the Ti-DLC films consisted of nano scale TiC particles which were comparable with low angle XRD and XPS results. XPS analysis established that the Ti2p spectrum is present when the Ti target current reaches 30 Amp or higher. Ti concentration increased as the Ti target current was increased. An extremely thin TiO2 layer exists on the top of the Ti-DLC films which was comparable with the AES results. The film thickness which could be deposited for Ti-DLC is much higher than that of conventional DLC films. Nanoindentation tests show that the nanohardness of the films ranging 15-22 GPa, with Er values ranging from 145 to 175 GPa. The wear test demonstrates the friction coefficient of the 420SS substrate, DLC and Ti-DLC films were about 0.8, 0.3 and 0.2, respectively. Obviously, the friction coefficients of the Ti-DLC films were lower than that of the DLC films.     

Thermal stability of Cr-doped diamond-like carbon films synthesized by cathodic arc evaporation

Cr-doped diamond-like carbon (DLC) films were synthesized using a cathodic arc evaporation (CAE) process. The thermal oxidation behavior of Cr-doped DLC films was investigated using thermal gravimetric analysis (TGA) and differential thermal analysis (DTA). The phase identification and microstructural examinations were conducted by X-ray diffraction, scanning electron spectroscopy (SEM), transmission electron spectroscopy (TEM), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS) in order to understand the characteristics of Cr-doped DLC films. The as-deposited Cr-doped DLC film exhibits a lamellar structure observed by TEM. A significant weight loss of film results from the thermal oxidation of carbon occurred at 290 to 342 °C. At the temperature higher than 342 °C, slight weight gain of specimen was observed due to the thermal oxidation of the underlying CrC_xN_y and CrN interlayer. By heat-treated specimens from 200 to 400 °C, Raman spectra reveal the increase of I_D/I_G value conforming to the graphitiation process of the Cr-doped DLC films. Finally, surface reactions of the annealed films using XPS analysis were discussed.     

Effect of inner oxygen on the interfacial layer formation for HfO<Subscript>2</Subscript> gate dielectric

The interfacial layer (IL) formed at the HfO₂/Si interface was investigated by using Fourier transform infrared spectroscopy (FT-IR), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS). Differently with the previous reports, it is concluded that the inner oxygen from bulk film predominates the oxidation process in interface region rather than the oxygen introduced from outer environment. First, from FT-IR, it is found that the formation of the IL strongly relies on the annealing temperature but does not obviously rely on the HfO₂ thickness and the annealing atmosphere. Second, the contradistinctive images of Hf/Si annealed in oxygen ambient and Hf/SiO₂ annealed in vacuum were investigated by TEM, which confirms the conclusion obtained from FT-IR data that the IL is formed not by a diffusion of the oxygen from the annealing atmosphere, but by a reaction within the interface region. Third, the Hf 4f, O 1s, and Si 2p core-level energy states of Hf/SiO₂ stack annealed in vacuum were investigated by XPS using two ways, one is investigating the samples annealed in vacuum for varied time and the other is investigating the fully oxidized sample in different depth. Based on the experiments, it is concluded that the inner oxygen from bulk films (HfO₂ or SiO₂) has greater influence on the IL formation comparing with the outer oxygen from environment.     

LPCVD氮化硅薄膜的化学组成

分别采用X光电子能谱(XPS)、俄歇电子能谱(AES)、傅立叶红外光谱(FTIR)以及弹性反冲探测(ERD)等方法,分析了三氯硅烷-氨气-氮气体系低压化学气相沉积(LPCVD)氮化硅(SiNx)薄膜的化学组成,并利用原子力显微镜(AFM)观察了SiNx薄膜的表面形貌.XPS分析结果表明,当原料气中氨气与三氯硅烷的流量之比小于3时获得富Si的SiNx薄膜,当流量之比大于4时获得近化学计量的SiNx薄膜(x=1.33).AES深度分析与XPS分析结果很好地吻合,在835cm-1产生的强红外吸收峰表明Si-N键的形成,ERD分析表明所制备SiNx薄膜中的氢含量很低(1.2at.%).AFM分析结果表明,所沉积的SiNx薄膜均匀、平整,薄膜的均方根粗糙度RMS仅为0.47nm.     

类金刚石薄膜中杂质Fe对其力学性能的影响

描述了利用射频等离子体溅射法采用不同阴极在衬底Ｓｉ片上形成类金刚石薄膜的杂质含量及杂质对厚度和硬度的影响分析与结果,比较了ＤＬＣ膜的力学性能在有无金属杂质情况下的异同,分析和计算了其硬度与硬度与制备参数间的关系,得出利用石墨作电极能制备出质量较好的ＤＬＣ膜,初步探讨在Ｓｉ衬底上沉积高硬度和强附着度类金刚石薄膜的有关工艺条件,并在理论上对这一结果进行了解释。