Microwave dielectric properties of W-doped Ba0.6Sr0.4TiO3 thin films grown on (001) MgO by pulsed laser deposition with a variable oxygen deposition pressure

The microwave dielectric properties of Ba_0.6Sr_0.4TiO₃ 1 mol% W-doped thin films deposited using pulsed laser deposition, are improved by a novel oxygen deposition profile. The thin films were deposited onto (001) MgO substrates at a temperature of 720 °C. A comparison is made between three different oxygen ambient growth conditions. These include growth at a single oxygen pressure (6.7 Pa) and growth at two oxygen pressures, one low (6.7 Pa) and one high (46.7 Pa). Films were deposited in a sequence that includes both a low to high and a high to low transition in the oxygen deposition pressure. Following deposition, all films were post-annealed in 1 atm of oxygen at 1000 °C for 6 h. The dielectric Q (defined as 1 / tanδ) and the dielectric constant, ε_r, were measured at room temperature, at 2 GHz, using gap capacitors fabricated on top of the dielectric films. The percent dielectric tuning (defined as (ε_r(0 V) − ε_r(40 V)) / ε_r(0 V) × 100) and figure of merit (FOM) (defined as percent dielectric tuning × Q(0 V)) were calculated. The film deposited using the two-stage growth conditions, 6.7 / 46.7 Pa oxygen, showed a maximum Q(0 V) value with high percent dielectric tuning and gave rise to a microwave FOM twice as large as the single stage growth condition. The improved dielectric properties are due to initial formation of a film with reduced interfacial strain, due to the formation of defects at the film/ substrate interface resulting in a high Q(0 V) value, followed by the reduction of oxygen vacancies which increases the dielectric constant and tuning.     

Fabrication of robust Bi3.25La0.75Ti3O12 thin film resistant to hydrogen damage

Ferroelectric bismuth lanthanum titanate (Bi_3.25La_0.75Ti₃O₁₂; BLT) thin films were deposited on Pt/TiO₂/SiO₂/Si substrate by chemical solution deposition method. The films were crystallized in the temperature range of 600–700 °C. The spontaneous polarization (P_s) and the switching polarization (2P_r) of BLT film annealed at 700 °C for 30 min were 22.6 μC/cm² and 29.1 μC/cm², respectively. Moreover, the BLT capacitor did not show any significant reduction of hysteresis for 90 min at 300 °C in the forming gas atmosphere.     

Electrochromic properties of nanocrystalline MoO3 thin films

Electrochromic MoO₃ thin films were prepared by a sol–gel spin-coating technique. The spin-coated films were initially amorphous; they were calcined, producing nanocrystalline MoO₃ thin films. The effects of annealing temperatures ranging from 100 °C to 500 °C were investigated. The electrochemical and electrochromic properties of the films were measured by cyclic voltammetry and by in-situ optical transmittance techniques in 1 M LiClO₄/propylene carbonate electrolyte. Experimental results showed that the transmittance of MoO₃ thin films heat-treated at 350 °C varied from 80% to 35% at λ = 550 nm (ΔT =  45%) and from 86% to 21% at λ ≥ 700 nm (ΔT =  65%) after coloration. Films heat-treated at 350 °C exhibited the best electrochromic properties in the present study.     

Influence of substrate on the pulsed laser deposition growth and microwave behaviour of KTa0.6Nb0.4O3 potassium tantalate niobate ferroelectric thin films

Thin films of potassium tantalate niobate KTa_0.6Nb_0.4O₃ (KTN) were grown by pulsed laser deposition on five different substrates suitable for microwave devices: (100)MgO, (100)LaAlO₃, (1–102)sapphire (R-plane), (0001)sapphire (C-plane) and alumina. The high volatility of potassium at the film growth temperature required the addition of an excess of potassium to the ablation target. For optimized deposition conditions, Rutherford backscattering showed that the KTN films had a 1: 1 atomic ratio for K:(Nb + Ta). As grown KTN thin films were single-phase, without any particular orientation on sintered alumina, whereas an epitaxial growth with the (100) orientation was achieved on (100)MgO and (100)LaAlO₃ with a mosaicity Δω_(100)KTN close to 0.7°–1.5° and  0.4°–0.9°, respectively, attesting a high crystalline quality. In contrast, growth of KTN on R-plane sapphire results in a texture with the (100) orientation and the presence of the (110) orientation as a secondary one. The room temperature measurements carried out on Au interdigited capacitors patterned on KTN coated (100) LaAlO₃ and sapphire led at 1 GHz to an agility ΔC / C  4.6% and  7.2%, respectively, for a moderate applied field of 15 kV cm^− 1. Stubs patterned on the same systems led to an agility ΔF_r / F_r of  2.2% and 4.2%, respectively, for F_r = 7 GHz and the same applied field.     

Ultraviolet emitting (Y1−xGdx)2O3−δ thin films deposited by radio frequency magnetron sputtering: Combinatorial modeling, synthesis, and rapid characterization

Gadolinium-doped, yttrium oxide thin films have been deposited on silicon (001) substrates by radio-frequency (RF) magnetron reactive sputtering that exhibit cathodoluminescence (CL) at ultraviolet frequencies. The maximum CL brightness occurred at λ314–315 nm characteristic of the ⁶P_3 / 2 → ⁸S (λ = 314 nm) transition observed in Gd-doped, yttrium oxide powders. The radiative recombination takes place at the rare earth activator Gd³⁺ site embedded in the Y₂O_3−δ host; the optical transition resides within the band gap of the Y₂O_3−δ host and the transition observed is characteristic of atomic gadolinium. A combinatorial approach to sputtering was used to deposit a film of variable composition from 1 to 23 at.% Gd in Y₂O_3−δ in order to rapidly discern the composition node of optimal CL brightness. A simulation was created for the purpose of predicting the film combinatorial composition for binary and ternary alloys prior to sputtering experiments in order to facilitate our combinatorial thin film synthesis technique. The model prediction varied from the real experimental composition profile by only 2.2 at.% Gd ± 1.6 at.% proving the predictor as a useful aide to complement combinatorial thin film experiments. A film of composition Y_1.56Gd_0.44O_3.25 (8.3 at.% Gd) yielded the maximum CL brightness. CL brightness increased continuously up to the 8.3 at.% Gd composition due to the increased number of activators present in the host. Beyond this composition the brightness drastically decreased. The oxygen composition in the combinatorial film was strongly dependent on the Gd composition; films were sub-stoichiometric δ > 0 below 6 at.% Gd and was over-stoichiometric δ < 0 beyond this composition.     

Deposition of Sm2O3 doped CeO2 thin films from Ce(DPM)4 and Sm(DPM)3 (DPM=2,2,6,6-tetramethyl-3,5-heptanedionato) by aerosol-assisted metal–organic chemical vapor deposition

Samarium-doped ceria (SDC) thin films were prepared from Sm(DPM)₃ (DPM = 2,2,6,6-tetramethyl-3,5-heptanedionato) and Ce(DPM)₄ using the aerosol-assisted metal–organic chemical vapor deposition method. -Al₂O₃ and NiO-YSZ (YSZ = Y₂O₃-stabilized ZrO₂) disks were chosen as substrates in order to investigate the difference in the growth process on the two substrates. Single cubic structure could be obtained on either -Al₂O₃ or NiO-YSZ substrates at deposition temperatures above 450 °C; the similar structure between YSZ and SDC results in matching growth compared with the deposition on -Al₂O₃ substrate. A typical columnar structure could be obtained at 650 °C on -Al₂O₃ substrate and a more uniform surface was produced on NiO-YSZ substrate at 500 °C. The composition of SDC film deposited at 450 °C is close to that of precursor solution (Sm : Ce = 1 : 4), higher or lower deposition temperature will both lead to sharp deviation from this elemental ratio. The different thermal properties of Sm(DPM)₃ and Ce(DPM)₄ may be the key reason for the variation in composition with the increase of deposition temperature.     

Structure and conducting properties of La0.5Sr0.5CoO3−δ films on YSZ

La_0.5Sr_0.5CoO_3−δ (LSCO) thin films were deposited on yttria stabilized zirconia (YSZ) substrates by pulsed laser deposition (PLD) for application to thin film solid oxide fuel cell electrodes. During the deposition, the substrate temperature was varied from 450 to 750°C, and the oxygen pressure in the chamber was varied from 80 to 310 mTorr. Films deposited at 650°C and an oxygen background pressure of 150 mTorr were mostly (100) oriented. Deposition at higher temperatures or under lower oxygen pressures lead to mostly (110) oriented films. Films with low electrical resistivity of 10⁻³ Ω·cm were obtained.     

Effect of substrate temperature on the texture and structure of polycrystalline Si0.7Ge0.3 films deposited on SiO2 by molecular beam deposition

The evolution of microstructure and texture of molecular beam deposited Si_0.7Ge_0.3 films on SiO₂ at the deposition temperature range of 400–700°C was investigated by X-ray diffraction and transmission electron microscopy. At deposition temperatures between 400 and below 500°C, the films were directly deposited as a mixed-phase on SiO₂ and have a inversely cone-shaped structure. In this temperature range deposited as a mixed-phase, the grain size increases as the temperature increases, so that the grains not only grow up by deposition, but also laterally grow by the solid phase crystallization, furthermore, the texture is changed from a {110} texture to mixed {311} and {110} textures. At 500°C, the film was deposited as only a crystalline phase and has a columnar structure with a strong {110} texture. In the temperature range of 500–700°C, as the temperature increases, the {311} and {111} textures develop whereas the {110} texture reduces. The film deposited at 700°C has a random orientation and structure.     

Structure and electrical properties of (100)-oriented Pb(Zn1/3Nb2/3)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 thin films on La0.7Sr0.3MnO3 electrode by chemical solution deposition

(100)-oriented 0.462Pb(Zn_1/3Nb_2/3)O₃–0.308Pb(Mg_1/3Nb_2/3)O₃–0.23PbTiO₃ (PZN-PMN-PT) perovskite ferroelectric thin films were prepared on La_0.7Sr_0.3MnO₃/LaAlO₃ (LSMO/LAO) substrate via a chemical solution deposition route. The perovskite LSMO electrode was found to effectively suppress the pyrochlore phase while promote the growth of the perovskite phase in the PZN-PMN-PT film. The film annealed at 700 °C exhibited a high dielectric constant of 2130 at 1 kHz, a remnant polarization, 2P_r, of 29.8 μC/cm², and a low leakage current density of 7.2 × 10^− 7 A/cm² at an applied field of 200 kV/cm. The ferroelectric polarization was fatigue-free at least up to 10¹⁰ cycles. Piezoelectric coefficient, d₃₃, of 48 pm/V was also demonstrated. The results showed that much superior properties could be achieved with the PZN-PMN-PT thin films on the solution derived LSMO electrode than on Pt electrode by sputtering.     

Effect of PWVA/Sb2O3 complex inhibitor on the corrosion behavior of carbon steel in 55%LiBr solution

The inhibition performance of PWVA/Sb₂O₃ complex inhibitor on carbon steel was studied in 55%LiBr + 0.07 mol L⁻¹ LiOH solution. Results indicated that the complex inhibitor decreased both anodic and cathodic polarization current density and widened the passive potential region of carbon steel in test solution and can be classified as mixed inhibitor. The complex inhibitor exhibited excellent inhibition performance on carbon steel when the concentrations of PWVA and Sb₂O₃ were 300 and 200 mg L⁻¹, respectively. With the solution temperature increasing from 145 to 240 °C, the corrosion rates of carbon steel increased from 4.71 to 120.66 μm y⁻¹. In solution containing the complex inhibitor, the relationship between relative coverage ratio of inhibitor on carbon steel surface and inhibition efficiency at 145 °C was obtained as the equation μ = 0.94η, it was a direct proportion. This result proved that the complex inhibitor inhibited the corrosion of carbon steel by geometric blocking effect. When solution temperature was 160 °C, the adsorption Gibbs free energy of PWVA and Sb₂O₃ on carbon steel were −49.59 and −44.29 kJ mol⁻¹, respectively. It indicated that the adsorption processes of PWVA and Sb₂O₃ on carbon steel surface were spontaneous processes. As a strong oxidant, PWVA facilitated the compact passive film comprising of FeO, Fe₂O₃ and Fe₃O₄ forming on the surface and itself was reduced to heteropoly blue. Sb₂O₃ adsorbed on carbon steel surface formed an adsorption film. PWVA and Sb₂O₃ behaved synergistic effect. The corrosion resistance performance of carbon steel in 55%LiBr + 0.07 mol L⁻¹ LiOH solution was improved by PWVA/Sb₂O₃ complex inhibitor.     

Synthesis of MoSi2–Al2O3 nanocomposite by mechanical alloying

MoSi₂–Al₂O₃ nanocomposite was synthesized by mechanical alloying (MA) of MoO₃, SiO₂ and Al powder mixture. The structural evolution of the powders was studied by X-ray diffraction (XRD). Both β-MoSi₂ and -MoSi₂ were obtained after 3 h of milling. The spontaneous formation of β-MoSi₂ during milling proceeded by a mechanically induced self propagating reaction (MSR), analogous to that of the self propagating high temperature synthesis (SHS). After 70 h of milling the β-phase transformed to -phase. The crystallite size of -MoSi₂ and Al₂O₃ after milling for 100 h was 12 and 17 nm, respectively. Residual Mo and Si in the 3 and 70 h milled samples formed β-MoSi₂ and Mo₅Si₃ during heating at 1000 °C, respectively.     

Characterization and microstructure of highly preferred oriented lead barium titanate thin films on MgO (100) by sol-gel process

Highly preferred oriented lead barium titanate (Pb_1−x,Ba_x)TiO₃ thin film, with particular emphasis on (Pb_0.5,Ba_0.5)TiO₃, can be obtained by spin-coating on MgO (100) substrate by using the precursor sol, which was synthesized from acetylacetone chelating with titanium isopropoxide and ethylene glycol as a solvent, in the sol-gel process. Film thickness, pyrolysis temperature and heating rate were studied systemically to investigate their influences on the formation of preferred oriented thin films. The highly preferred (001)/(100) oriented thin film could be obtained by the pyrolysis of wet film at 500 °C and annealing at 600 °C at a slow heating rate of 5 °C/min. It is confirmed that the tetragonal perovskite structure of the titanate ceramic decreases with an increase of Ba content in (Pb_1−x,Ba_x)TiO₃. The (001)/(100) oriented films were synthesized from all compositions between x = 0.2 and x = 0.8, at a crystallization temperature of 600 °C. In particular, for the Ba content in the range of x = 0.50.6, highly preferred (001)/(100) planes were observed.     

Growth, thermal and optical properties of Yb:GdYAl3(BO3)4 crystal

Single crystal of Yb:GdYAl₃(BO₃)₄(Yb:GdYAB) has been grown by the flux method. The structure of Yb:GdYAB crystal has been determined by X-ray diffraction analysis. The experiment show that the crystal has the same structure as that of YAl₃(BO₃)₄ crystal and its unit cell constants have been measured to be a = 9.30146 Å, c = 7.24164 Å, Vol = 542.59 Å³. The absorption and fluorescence spectrum of Yb:GdYAl₃(BO₃)₄ crystal have also been measured at room temperature. In the absorption spectra, there are two absorption bands at 938 nm and 974 nm, respectively, which is suitable for InGaAs diode laser pumping. In the fluorescence spectra, there are two fluorescence peaks at 992 and 1040 nm. The thermal properties of Yb:GdYAl₃(BO₃)₄ crystal have been studied for the first time. The thermal expansion coefficient along c-axis is almost 5.4 times larger than that along a-axis. The specific heat of the crystal has been measured to be 0.77 J/g °C at room temperature. The calculated thermal conductivity is 5.26 Wm⁻¹ K⁻¹ along a-direction.     

Influencing factors on the pyroelectric properties of Pb(Zr,Ti)O3 thin film for uncooled infrared detector

Zr-rich PZT thin films were synthesized by metallorganic decomposition and their dielectric and pyroelectric properties were investigated with different ratios of zirconium/titanium and poling condition. All the films became effectively (1 1 1) textured and well crystallized at the annealing temperature of 700 °C. With increasing Zr content, coercive field increased and voltage dependent capacitance curve appeared asymmetrical, indicating the presence of antiferroelectric phase, PbZrO₃, in film composition. The pyroelectric coefficient in the practically applicable temperature ranges of 20–60 °C was found to be maximum for the thin film with 0.85 mol of zirconium in PZT. Further increase in zirconium content led to severe deterioration in pyroelectric properties. The values of pyroelectric coefficient and figures of merit were greatly influenced by poling direction and temperature. The result was explained in terms of electric phase and state of polarization in film.     

Effect of β-spodumene on the phase development in an alumina/aluminium-titanate system

The effect of β-spodumene additions on the in situ phase formation and abundances in an Al₂O₃–Al₂TiO₅ system in the temperature range 1000–1400 °C has been studied by neutron diffraction and differential thermal analysis. Results show that β-spodumene began to decompose by phase separation and partial melting at 1290 °C, followed by complete melting at 1330 °C. Formation of Al₂TiO₅ was observed to occur at 1310 °C and its abundance increased with temperature. The addition of β-spodumene as a sintering aid did not cause its reaction with alumina or rutile to form additional phases. Addition of β-spodumene in excess of 5 wt% resulted in pronounced vitrification, which partly recrystallised when cooled to room temperature. The temperatures of Al₂TiO₅ formation and melting of β-spodumene are consistent with the results of differential thermal analysis.     

Synthesis, phase transformation and dielectric properties of sol–gel derived Bi2Ti2O7 ceramics

Sol–gel derived Bi₂Ti₂O₇ ceramic powders have been prepared from methoxyethoxides of bismuth and titanium (molar ratio of Ti/Bi = 1.23 and water/alkoxides = 1.31). The Bi₂Ti₂O₇ phase was stable at a low temperature (700 °C), but it then transformed into mixed phases of Bi₄Ti₃O₁₂ and Bi₂Ti₄O₁₁ at 850–1150 °C. The single phase of Bi₂Ti₂O₇ reoccurred at 1200 °C. Dielectric properties and ferroelectric behavior of samples sintered at 1150 and 1200 °C were examined. Under frequency of 1 MHz, samples sintered at 1150 and 1200 °C had a dielectric constant of 101.3 and 104.2, and a loss tangent of 0.0193 and 0.0145, respectively. Only the sample sintered at 1150 °C showed ferroelectric behavior, where remanent polarization is 3.77 μC cm⁻² and coercive field is 24 kV cm⁻¹. Thus, the Bi₂Ti₂O₇ did not exhibit ferroelectricity, but the mixed phase of Bi₄Ti₃O₁₂ and Bi₂Ti₄O₁₁ did.     

Preparation and photoluminescence properties of Eu-doped Ga2O3 nanorods

GaOOH:Eu³⁺ nanorods with different aspect ratios were prepared by hydrothermal method at 140 °C. - and β-Ga₂O₃:Eu³⁺ were converted from as-prepared GaOOH:Eu³⁺ particles by calcination at 500 and 850 °C, respectively. The products were characterized with X-ray diffraction (XRD), transmission electron microscope (TEM) and photoluminescence (PL). Results show that solution pH values play a key role in the formation of the GaOOH:Eu³⁺ powders with different morphologies and - and β-Ga₂:Eu³⁺ inherit the morphology of GaOOH:Eu³⁺ exactly. The photoluminescence characteristics of β-Ga₂O₃:Eu³⁺ were also investigated. Experimental results reveal that the color purity of β-Ga₂O₃:Eu³⁺ nanorods with high aspect ratio is enhanced in comparison with β-Ga₂O₃:Eu³⁺ nanorods with low aspect ratio.     

Preparation and optical properties of sol–gel derived Er-doped Al2O3–Ta2O5 films

Thin films of the system xAl₂O₃–(100 − x)Ta₂O₅–1Er₂O₃ were prepared by a sol–gel method and a dip-coating technique. The influences of the composition and the crystallization of the films on Er³⁺ optical properties were investigated. Results of X-ray diffraction indicated that the crystallization temperature of Ta₂O₅ increased from 800 to 1000 °C with increased values of x. In crystallized films, the intensities of the visible fluorescence and upconversion fluorescence tend to decrease with an increase in x values, due to the high phonon energy of Al₂O₃; the strongest fluorescence is observed in a crystallized film for x = 4 heat treated at 1000 °C. In amorphous films obtained by heat treatment at relatively low temperatures the Er³⁺ fluorescence could not be observed because strong fluorescence from organic residues remaining in the films thoroughly covered the Er³⁺ fluorescence. On the other hand, the Er³⁺ upconversion fluorescence in the amorphous films was observed to be stronger than that in the crystallized films. The strongest upconversion fluorescence is observed in an amorphous film for x = 75 heat treated at 800 °C.     

Deposition and dielectric properties of CaCu3Ti4O12 thin films on Pt/Ti/SiO2/Si substrates using pulsed-laser deposition

CaCu₃Ti₄O₁₂ (CCTO) thin films were successfully deposited on Pt/Ti/SiO₂/Si(1 0 0) substrates using pulsed-laser deposition technique. The crystalline structure and the surface morphology of the CCTO thin films were greatly affected by the substrate temperature and oxygen pressure. Thin films with a (2 2 0) preferential orientation were obtained at the substrate temperature above 700 °C and oxygen pressure above 13.3 Pa. The 480-nm thin films deposited under 720 °C and 26.6 Pa have a fairly high dielectric constant of near 2000 at 10 kHz and room temperature. The values of the dielectric constant and loss and their temperature-dependence under different frequency are comparable with those obtained in the epitaxial CCTO films grown on oxide substrates.     

Sintering behavior and microwave dielectric properties of Bi3(Nb1−xTax)O7 solid solutions

Solid solutions of Bi₃(Nb_1−xTa_x)O₇ (x = 0.0, 0.3, 0.7, 1) were synthesized using solid state reaction method and their microwave dielectric properties were first reported. Pure phase of fluorite-type could be obtained after calcined at 700 °C (2 h)⁻¹ between 0 ≤ x ≤ 1 and Bi₃(Nb_1−xTa_x)O₇ ceramics could be well densified below 990 °C. As x increased from 0.0 to 1.0, saturated density of Bi₃(Nb_1−xTa_x)O₇ ceramics increased from 8.2 to 9.1 g cm⁻³, microwave permittivity decreased from 95 to 65 while Q_f values increasing from 230 to 560 GHz. Substitution of Ta for Nb modified temperature coefficient of resonant frequency τ_f from −113 ppm °C⁻¹ of Bi₃NbO₇ to −70 ppm °C⁻¹ of Bi₃TaO₇. Microwave permittivity, Q_f values and τ_f values were found to correlate strongly with the structure parameters of fluorite solid solutions and the correlation between them was discussed in detail. Considering the low densified temperature and good microwave dielectric proprieties, solid solutions of Bi₃(Nb_1−xTa_x)O₇ ceramics could be a good candidate for low temperature co-fired ceramics application.