量子阱效应及其光电性质的表面光电压谱表征

讨论了量子阱限制效应、激子的束缚能以及激子峰的形成，分析了量子阱的光电特性及量子阱表面光电压的形成和特点。结果表明：量子阱有根本不同于体材料的光电特性。     

Zn1-xCdxSe/ZnSe的量子Stark效应的变分法研究

用变分法计算了在不同量子阱宽度、不同外电场强度下，Zn1-xCdxSe/ZnSe量子阱中电子、空穴基态能量及激子束缚能的变化规律，并根据所得的Ee、Eh和Eb数据，计算出激子吸收峰的Stark移动。计算结果显示，随着外电场强度和 量子阱宽度的增大，量子Stark效应变得更为显著，本文还把计算所得的Stark移动与从激子吸收光谱曲线中得到的实验数据进行了比较，当阱宽等于9nm，电场为100kV/cm时，两者符合得较好。     

量子阱质量检测方法研究

目的 研究激子峰所包含的相关信息,为量子阱的质量检测提供依据。方法 总结了有关激子峰的研究成果,将其归纳成可操作的测试理论。结果与结论 激子峰的相对强度反映量子阱生长质量,激子峰的位置反映内部电场分布进一步反映变分布。     

量子阱质量检测方法研究

目的　研究激子峰所包含的相关信息 ,为量子阱的质量检测提供依据 .方法　总结有关激子峰的研究成果 ,将其归纳成可操作的测试理论 .结果与结论　激子峰的相对强度反映量子阱生长质量 ,激子峰的位置反映内部电场分布并进一步反映应变分布 .     

磁场作用下抛物量子阱线中激子的束缚能

采用差分的方法在准一维有效势模型下对抛物型量子阱线中激子性质受到磁场的影响进行了计算,分析了磁场对量子阱线中激子的束缚能以及电子和空穴之间的平均距离作用.结果表明:外加磁场会增加量子阱线中激子的束缚能,并且磁场对束缚能的作用会受到量子约束势的影响,在量子约束势较弱时磁场的影响较大,量子约束势较强时磁场的影响较小;外加磁场会减小电子和空穴间的平均距离.     

折射率线性分布多量子阱波导的色散特性

本文采用Ｆｌｏｑｕｅｒ理论和转移矩阵技术，求出了折射率线性分布多量子阱波导芯子区域的等效折射率公式和适用于ＴＥ及ＴＭ两种偏振的色散关系，其结果更适用于实际的多量子阱波导色散特性的分析。     

量子阱半导体激光器材料的MBE生长研究

本文阐述了分子束外延（ ＭＢＥ） 技术的特点以及在实现大面积均匀的超薄外延层生长中的应用。利用进口ＭＢＥ 设备, 实现了单量子阱（ＳＱＷ） 和多量子阱（ ＭＱＷ） 半导体激光器外延片的生长, 并对外延片的电学和光学特性进行了测试和分析。     

ZnSe多量子阱光开关的优化设计

本文提出了一个ZnSe/ZnS多量子阱光开关的综合优化方案。根据Kronig-Penney模型,对多量子阱结构进行优化。又根据实验结果对多量子阱构成的非线性F-P进行了优化设计。     

双势垒量子阱中的纵向光学声子模

本文应用具有色散的连续介质流体力学理论，研究双势垒量子阱中的纵向光学声子模。研究，当势垒层宽度大于量子阱宽度时，光学声子模是禁闭在量子阱中的，当势垒层宽度较小时（一般约为或小于量子阱宽度的十分之一），双势垒量子阱中可存在更多支纵向光学声子模，获得了这些波导光学声子模和界面光学声子模和色散关系方程，并用数值方法计算了它们的色散关系。     

准一维有机量子阱特征

有机聚合物Oligomers（低聚体）可惜人聚形成所谓的共聚物，具有准一维量子阱或超晶格结构特征。本文针对聚乙炔（polyacetylene）（PA）和聚对苯撑（poly(p-phenylene）（PPP）组成的三嵌段（triblcok）共聚物xPA／nPPP/γPA的量子阱性质进行了研究，发现均物组分及其界面耦合对共聚物的电子成具有调制作用。     

Characteristics of InGaN multiple quantum well blue-violet laser diodes

Studies on InGaN multiple quantum well blue-violet laser diodes have been reported. Laser structures with long-period multiple quantum wells were grown by metal-organic chemical vapor deposition. Triple-axis X-ray diffraction (TAXRD) measurements show that the multiple quantum wells were high quality. Ridge waveguide laser diodes were fabricated with cleaved facet mirrors. The laser diodes lase at room temperature under a pulsed current. A threshold current density of 3.3 kA/cm2 and a characteristic temperature T0 of 145 K were observed for the laser diode.     

Energy spectrum of an electron confined in the hexagon-shaped quantum well

Considering the hexagonal-shaped quantum-scale formations on the surface of thin semiconductor films, a methodology was developed to obtain the analytical solution of the Schrdinger equation when impenetrable walls of a quantum well are treated as mirrors. The results obtained allowed the calculation of the space probability distributions and the energy spectrum of the particle confined in a hex-agonal-shaped well.     

Laser-field-induced magnon amplification in a magnetic semiconductor quantum well under an external magnetic field

The laser-field induced magnon amplification in a magnetic semiconductor quantum well under an external magnetic field was discussed, it is shown that when the laser frequency is near to the electron cyclotron frequency, no matter how weaker the laser field is, the magnon amplification always occurs. In case of fixed laser frequency, the optical absorption of magnons obeys the definite selection rule to the laser field strength. The rate of change of magnon occupation is calculated, and the amplification condition is given.     

Plasma-enhanced Chemical Vapordeposition SiO2 Film after Ion Implantation Induces Quantum Well Intermixing

A method of QWI ( quantum well intermixing) realizing through plasma-enhanced chemical vapordepositiom (PECVD) SiO2 film following ion implantation was investigated. PECVD 200 nm SiO2 film after 160 keV phosphorus(P) ion implantation was performed to induce InP-based multiple-quantum-well (MQW) laser structural intermixing, annealing process was carried out at 780 ℃ for 30 seconds under N2 flue, the blue shift ofphotoluminescence (PL) peak related to implanted dose: 1 × 1011 , 1 × 1012, 1 × 1013 ,3 × 1013 , 7 × 1013 ion/ cm2 is 22 nm, 65 nm, 104 nm, 109 nm, 101 nm, respectively. Under the same conditions, by comparing the blue shift of PL peak with P ion implantation only, slight differentiation between the two methods was observed, and results reveal that the defects in the implanting layers generated by ion implantation are much more than those in SiO2 film. So, the blue shift results mainly from ion implantation. However , SiO2 film also may promote the quantum well intermixing.     

Modulated Quasi-plane Tunnel-ing Current

A new tutmeling junction can be formed by an insulator layer inserting into a quantum well, and in the quantum well, a quasi-plane tunneling current can be formed by applying a tunneling voltage. If a P-N junction is grown on the quantum well, the tunneling current can be modulated by a P-N junction-bias voltage. The modulated quasi-plane tunneling current is not only related to the bias voltage, but also to the depth of the quantum well. It is analyzed that the P-N junction-bias voltage how to affect the tunneling current and a method of measuring the depth of the quantum well is presented.     

鄂西渝东地区天然气井钻井完井技术

鄂西渝东地区海相地质特点复杂,对天然气井钻井完井工艺提出了很高的要求。江汉油田通过对鄂西渝东海相钻井,在天然气井的井身结构设计、井控、气层保护、水平井完井、固井等方面形成了一整套钻井综合性配套措施,有效地解决了该地区钻井生产中存在的主要技术问题,取得了良好的技术效益。     

980nm InGaAs应变量子阱激光器和掺铒光纤放大器用泵浦源

利用分子束外延技术研制出了高质量ＩｎＧａＡｓ／ＧａＡｓ应变量子阱材料及量子阱激光器，在室温和１０Ｋ温度下，应变量子阱材料的光荧光峰值半宽分别为３２ｍｅＶ和２．４ｍｅＶ，宽接触激光器的阈值电流密度低达１４０Ａ／ｃｍ￣２。脊形波导窄条形量子阱激光器的阈值电流和微分量子效率分别为１５ｍＡ和０．８Ｗ／Ａ，线性输出功率大于１２０ｍｗ，基横模输出功率可达１００ｍＷ。ＩｎＧａＡｓ应变量子阱激光器和单模光纤进行了耦合，其组合件出纤光功率典型值为４０ｍＷ，最大值可达６０ｍＷ。显示出了高的基横模输出功率和高的耦合效率。其组合件在４０ｍＷ下，中心发射波长在９７７ｎｍ，成功地研制出适于掺铒光纤放大器用的应变量子阱激光器泵浦源。     

GaAs/AlGaAs多量子阱空间光调制器入射角度特性研究

研究了GaAs/AlGaAs多量子阱(MQW)空间光调制器(SLM)在不同入射角度下的调制特性。对腔模位置与入射角度的关系进行了理论计算和实验验证,两者具有较好的一致性。当入射角在0°～75°之间变化时,腔模从871nm变化至845nm,可调节范围达26nm。当入射光从垂直入射变化为约45°入射时,SLM对比度从(CR)3.8提高到16.3,调制电压从9.5V下降至6.5V。理论分析和实验结果表明,入射角度调节能够有效提高GaAs/AlGaAs MQW SLM调制性能。