民用飞机导光板自适应调光控制技术研究

当前民用飞机驾驶舱内导光板照明采用手动亮度调节方式,既增加驾驶员负担,又不易根据驾驶舱光环境精准控制导光板亮度,本文深入研究了导光板照明系统的自适应调光控制技术。通过驾驶舱三维建模及SPEOS光学仿真建立了光分布概况,确定了环境光照传感器的布局,并通过对驾驶舱光环境的人机工效试验及置信区间统计学分析,确立了亮度调光曲线模型。在此基础上,提出了导光板照明自适应调光控制理想模型,研究成果为飞机设计领域的应用提供了理论依据。     

基于BTS629的自动调光装置的设计实现

为了实现自动调光,简要分析BTS629电路,并采用脉宽调制技术(PWM)对照明灯具及LED的功率进行连续控制以实现自动调光的工作原理.应用该IC芯片和光敏电阻设计了能够实现灯光自动调节的电路,并通过实测光敏电阻参数给出调光比较电位设计的方法.该装置可广泛应用于建筑、街道、汽车等照明应用场合,节能效果显著.     

LED照明智能控制方法研究

LED灯具具有高效节能、超长寿命、光线健康、绿色环保、易于调光等优点,特别是调光控制特性远较白炽灯、荧光灯和高强度气体放电灯的调光控制特性好:调光控制范围宽,调光工作特性稳定,调光控制速度快,易于满足不同照明应用场合要求和易于实现数控调光控制等优点。近年来随着无线技术发展,利用无线控制技术对LED灯具进行调光调色得到了很好的应用。     

基于ZigBee网络的LED调光灯具的设计

为了满足隧道智能照明的控制需求,提出了一种基于ZigBee网络的LED调光灯具的设计方案,并完成相关电路的设计。该LED灯具主要包括前级电路、LED驱动电路、ZigBee无线模块以及PWM产生模块,能够稳定地满足系统对于LED灯具的调光要求,达到了设计要求。     

基于DIALux仿真分析的两阶段道路照明优化设计

照明设施是道路的重要组成部分,但是在道路照明的设计过程中,往往由于灯具的配光类型与路况不匹配、节能模式控制方案的不合理,导致道路照明质量低、浪费大量的电力能源。文章以扬州市翠岗路为例,根据《城市道路照明设计标准》,研究灯具的选型依据、布灯方式确定方法、路灯的配光类型对道路照明质量和利用率的影响,并以非对称式LED灯为照明灯具,对智能控制的全亮模式和调光模式进行照明仿真设计,获得一套与传统照明方案相比,照明质量更佳、节能效果好的道路照明设计方案。     

基于单片机的LED照明光环境智能控制装置设计

本文设计了一种LED照明光环境智能控制装置,该装置可根据室内活动提供了多种LED室内照明光环境,并通过传感器对周围环境进行采集,利用单片机对LED灯具进行控制,采用PWM调光和不同色温LED混色的方法实现对光环境的调节。     

两种新型调光控制集成电路

<正> 为了让电子灯具设计人员和电子爱好者丁解新型调光控制器的发展,本文介绍两种新颖的调光控制集成电路HT—7706和BA2103以及它们的应用电路,以供选用。 一、HT—7706四键调光控制集成电路 HT—7706是采用大规模CMOS工艺制作的四键调光控制集成电路。它外设四只按键,按动不同的按键,就可实现无级调光,分级调光,延时关灯和延时控制四种不同的控制功能。     

基于电力线载波通信的智能调光系统设计

针对家用照明灯具远程测控系统的可靠性和经济性问题,设计了一套基于电力线载波通信的家居智能调光系统.整个系统以S3C6410智能网关为核心,内嵌Web服务器,结合GPRS/WIFI网络和电力线载波通信技术,实现了对室内LED灯具的调光控制、情景设置和定时开关等功能.介绍了该系统的总体设计方案、软硬件实现方法.测试结果表明,系统能够满足家居等对实时性要求不高的场合.系统结构简便、通信稳定、易于扩展.     

用于照明控制的通信协议

电子控制照明是我们可以减少全球能源消耗的最有效途径之一。在美国,商业和住宅照明对能源的消耗占能源总产量的22％。在这方面可以实现大量的节约,特别是在大型商业应用中使用了灯光亮度可调的技术时,更是如此。调光系统的应用需要通过通信接口将信息传送给灯具。常用的一种方法是使用0～10V的模拟控制。但是,如果有很多灯具需要设置和管理,这种方法就不方便了。     

性能优越的多功能调光台灯

电子调光台灯是目前较为普及的一种照明灯具,其中调光器件有使用普通元件的,也有采用专用集成电路的。在调光形式上有连续无级调光,也有分级调光。这里所介绍的是采用一块较为新颖的专用调光集成电路,型号为HT7706,用它组成的调光电路除具有以往的连续无级调光及分级调光功能外,还具有延时熄灭功能以及定时自动亮/灭控制功能。是一种功能较为齐全,性能较好的调光集成电路。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.