BiOCl/ZnO复合光催化剂的制备及其光催化性能

以Zn(NO_3)_2·6H_2O,NaOH和KCl以及一定量的Bi(NO_3)_3·5H_2O为起始原料,采用水热法制备不同比例的BiOCl/ZnO复合光催化剂。采用X射线粉末衍射(XRD)、X射线光电子能谱(XPS)、扫描电镜(SEM)、能谱(EDS)、紫外可见漫反射光谱(UV-Vis DRS)等测试手段对BiOCl/ZnO进行表征。结果表明,BiOCl/ZnO比纯BiOCl的吸收强度和吸收范围增大,BiOCl与ZnO的协同催化作用,促进了光生电子/空穴的分离和迁移。以邻苯二酚为研究对象,考察BiOCl/ZnO光催化剂的光催化性能。结果表明,1∶1BiOCl/ZnO复合催化剂显示出最佳的催化活性,在400金卤灯光照反应120 min后使10 g/L邻苯二酚降解率达到95.7%,速率常数分别是纯ZnO和纯BiOCl的6.09和4.19倍,且稳定性良好,重复使用4次后降解率仍在90.0%以上。     

水热合成Bi2WO6/ZnO异质结型光催化剂及其光催化性能

在不同温度下(120～220℃),利用水热法制备了含1wt%、2wt%、4wt%和8wt%Bi2WO6的异质结型Bi2WO6/ZnO复合光催化剂,采用X射线粉末衍射(XRD)、扫描电镜(SEM)、傅里叶变换红外光谱(FT-IR)、紫外可见漫反射(UV-Vis)吸收光谱及光致发光光谱(PL)等系列手段对所制备的光催化剂进行了表征,并以紫外光(365nm)为光源,酸性橙II为降解对象,进行光催化活性测试,考察了不同Bi2WO6复合量及不同水热温度对ZnO光催化剂反应活性的影响.研究表明,异质结型Bi2WO6/ZnO复合光催化剂的光催化活性明显优于纯ZnO和Bi2WO6.当复合4wt%Bi2WO6水热处理温度为150℃时,所制备的复合光催化剂的光催化活性最佳,为纯ZnO的2.6倍.活性提高的主要原因是形成的Bi2WO6/ZnO异质结能显著降低光生电子和空穴对的复合几率,并改善了异质结型Bi2WO6/ZnO复合光催化剂的表面性能.     

Bi2O3/BiOCl异质复合材料的制备及其光催化性能

本文以五水硝酸铋和氯化钾为原料,利用水热法一步制备了Bi2O3/BiOCl异质复合光催化材料,采用X射线粉末衍射(XRD)、扫描电镜(SEM)和紫外可见漫反射光谱(UV-Vis)对样品进行了表征。以罗丹明B为目标降解物,研究n(Bi)/n(Cl)摩尔比对合成Bi2O3/BiOCl异质复合光催化剂的形貌和光催化性能的影响。结果表明:随着n(Bi)/n(Cl)摩尔比的增加,Bi2O3/BiOCl的光催化活性显著增强,在n(Bi)/n(Cl)=1.75时,制备的Bi2O3/BiOCl异质复合光催化材料具有最高的光催化活性。     

BiOCl/Bi2O3异质结复合光催化剂的制备和光催化性能研究

以五水硝酸铋、硝酸、氢氧化钠、盐酸为原料,用盐酸浸渍法制备了盐酸与氧化铋物质的量比分别为0.3∶1、0.5∶1、0.7∶1、1∶1的BiOCl/Bi2O3异质结新型复合光催化剂。用X射线衍射(XRD)、热重-差热分析(TG-DSC)和扫描电子显微镜(SEM)等手段对材料进行了表征。250 W高压汞灯照射下,用光催化降解罗丹明B反应来测试催化剂的光催化活性,结果表明BiOCl/Bi2O3复合光催化剂的性能明显优于单体Bi2O3。当盐酸与氧化铋物质的量比为0.7∶1时,BiOCl/Bi2O3催化剂的光催化活性最佳。最后研究了抑制剂对BiOCl/Bi2O3复合光催化剂降解罗丹明B的影响,发现三乙醇胺和碘化钾都有一定的抑制作用。     

3D Bi2WO6/TiO2异质结型光催化剂的制备以及增强的可见光催化性能

通过浸渍法合成了3D多组分Bi2WO6/TiO2异质结型复合光催化剂,多次浸渍使TiO2粒子层层沉积到花状Bi2WO6结构的表面。采用X射线粉末衍射(XRD)、扫描电镜(SEM)、光致发光光谱(PL)以及紫外-可见漫反射(UV-Vis)吸收光谱分别对所制备的复合光催化剂进行了表征,并以500W氙灯为光源,罗丹明B(RhB)为降解对象,进行了光催化活性测试,考察了不同TiO2复合量对Bi2WO6光催化剂反应活性的影响。结果表明,异质结型Bi2WO6/TiO2复合光催化剂的光催化活性明显优于纯Bi2WO6和TiO2。当复合15%(质量分数)TiO2时,所制备的复合光催化剂最有效促进电子和空穴的分离,并且光催化活性得到提高。活性提高的原因是所形成的异质结特殊的界面能够显著地降低光生电子和空穴的复合几率,并且具有较高的光吸收能力。     

棒状α-Fe_2O_3/ZnO复合物的制备及其光催化性能

以硝酸锌(Zn(NO_3)_2)、硝酸铁(Fe(NO_3)_3)和氢氧化钠(NaOH)为原料,采用液相沸腾回流法制得了不同长径比的棒状α-Fe_2O_3异质复合ZnO光催化剂。用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)及紫外-可见漫反射光谱(UV-visDRS)等多种手段对产物进行表征。以"三致"污染物五氯酚为降解对象,考察了紫外-可见光照下样品的光催化效果。结果表明,棒状α-Fe_2O_3/ZnO复合光催化剂的性能与其α-Fe_2O_3的含量密切相关。当α-Fe_2O_3与ZnO的物质的量比为1∶5时,样品光催化活性最高,4h内即可将五氯酚降解完全。     

AgCl/BiOCl 片组装纳米花球的合成及光催化性能研究

以硝酸铋(Bi(NO_3)_3·5H_2O)、硝酸银(AgNO_3)、氯化钾(KCl)为原料,通过无模板、无加热、无表面活性剂的绿色化学方法制备了BiOCl片组装纳米花球,并在它的基础上采用浸渍法负载AgCl实现了对它的改性。以罗丹明B(RhB)和甲基橙(MO)为光催化反应降解模型,进行了光催化活性测试,考察了不同浸渍次数的AgCl对BiOCl光催化剂反应活性和稳定性的影响。用XRD、SEM、EDS、UV-Vis吸收光谱等手段对其结构、形貌、光谱吸收性能等进行了表征。研究表明,AgCl改性的BiOCl复合光催化剂的光催化性能明显优于纯BiOCl,当浸渍2遍时,光催化降解RhB活性最佳,当浸渍5遍时,光催化降解MO活性最佳。     

热聚合法制备ZnO/g-C_3N_4复合光催化剂及其光催化性能研究

以尿素、乙酸锌为前驱体,采用热聚合方法制备ZnO/g-C_3N_4复合光催化剂。通过X射线衍射、扫描电镜、红外光谱、紫外-可见光光谱及X射线电子能谱,对样品的晶体结构、形貌及光学性质进行表征。以紫外灯为光源,以酸性红(AR)为废水降解模型考察复合材料的光催化活性。结果表明:制得的复合光催化剂光催化性能要好于纯g-C_3N_4,且当ZnO∶g-C_3N_4=0.5∶1(摩尔比)时,光催化活性最高。复合后的光催化剂对反应底物有更强的吸附能力,能更有效地抑制电子-空穴的复合。进一步对AR的降解机理进行了探讨,发现超氧根自由基(O-·2)是使AR有效降解的活性物种。     

CuO/ZnO复合光催化剂的制备和性能

以十六烷基三甲基溴化铵为生长调节剂用一步水热法合成了纳米CuO/ZnO复合光催化剂。采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、X射线光电子能谱仪(XPS)、荧光光谱仪(FL)和紫外-可见光谱仪(UV-Vis)等手段对其表征,在紫外光照射下研究了不同CuO配比的复合光催化剂对目标降解物甲基橙的光催化效果和循环稳定性。结果表明,CuO/ZnO复合光催化剂主要由CuO纳米颗粒和ZnO纳米片组成;引入适量的CuO可调节ZnO的光吸收性能,提高紫外光催化效率;过量(?7%)的CuO抑制ZnO的紫外光催化效率;CuO/ZnO在光催化过程中具有良好的稳定性。     

研磨-焙烧法制备La2O3/BiOCl复合光催化剂及其对高浓度染料降解性能

首先利用沉淀法合成了BiOCl纳米片, 然后利用研磨-焙烧法将La₂O₃纳米颗粒复合到BiOCl纳米片中, 制备了一系列La₂O₃/BiOCl复合光催化剂(La₂O₃: 1wt%、2wt%、4wt%、8wt%)。运用X射线粉末衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)、光电子能谱(XPS)、紫外-可见漫反射光谱(UV-Vis DRS)、傅里叶红外光谱(FT-IR)和光致发光(PL)谱等对样品的晶相、光吸收和表面性能等进行了表征。以紫外灯(λ = 254 nm)为光源, 评价了所制备样品光催化降解高浓度染料酸性橙II(40×10^-6)的活性。结果表明, 经过研磨-焙烧后该系列催化剂均具有较好的结晶性能, 同时2~5 nm的La₂O₃纳米粒子粘附在BiOCl纳米片表面。200℃焙烧制备的1wt%La₂O₃/BiOCl催化剂具有丰富的表面羟基, 对染料表现出较强的吸附性能。该催化剂表现了最高的光催化活性, 活性为纯BiOCl的2.4倍。另外, La₂O₃/BiOCl中的La³⁺提供的氧化-还原势阱可能捕获光生电子, 从而阻止了光生电子(e^-)和空穴(h⁺)的复合, 有利于光催化活性的提高。     

Electronic structure and formation mechanism of complex Ti-Nb oxide

Two-layer thin film specimens of Nb₂O₅ and TiO₂ were deposited on optical-grade quartz and n-type single crystalline silicon substrates with (100) crystallographic orientation by a magnetron deposition source under high vacuum. All samples were subjected to 1-5 h of resistive heating at ultra high vacuum, and in situ X-ray diffraction measurements (XRD) were made in the temperature range of 300-1373 K. Analysis of the XRD data confirmed the growth of TiNbO₄ during cooling of the two-layered specimens which had been previously heated to 1373 K. Optical measurements revealed a band gap value of 3.78 eV for the direct transition and 3.29 eV for the indirect one. The samples had a transmittance of 85% in the visible range. Electrophysical measurements in high vacuum established the electroresistivity vs. temperature dependence in the range of 300-773 K, from 7.3 ? 10^− 1 to 3.9 ? 10^− 2 Ω cm, respectively. X-ray photoelectron spectroscopy measurements were used to examine the chemical shift for Nb 3d, with a value of − 1.1 eV in comparison with Nb⁵⁺ and matched to Nb⁴⁺[1], while the Ti lines correspond to Ti⁴⁺[2].     

Optical properties of thin films of mixed Ni-W oxide made by reactive DC magnetron sputtering

Thin films of Ni_xW_1 − x oxides with x = 0.05, 0.19, 0.43 and 0.90 were studied. Films with thicknesses in the range 125-250 nm were deposited on silicon wafers at room temperature by reactive DC magnetron co-sputtering from targets of Ni and W. The films were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM), and spectroscopic ellipsometry (SE). XRD spectra and SEM micrographs showed that all films were amorphous and possessed a columnar structure. The ellipsometric angles Ψ and Δ of as-deposited films were measured by a rotating analyzer ellipsometer in the UV-visible-near infrared range (0.63-6.18 eV) and by an infrared Fourier transform rotating compensator ellipsometer in the 500-5200 cm⁻¹ wavenumber range. SE measurements were performed at angles of incidence of from 50 ° to 70 °. Parametric models were used to extract thicknesses of the thin films and overlayers of Ni_xW_1 − x oxide at different compositions, band gaps and optical constants. Features in the optical spectra of the Ni_xW_1 − x oxides were compared with previous data on tungsten oxide, nickel oxide and nickel tungstate.     

High k dielectrics for low temperature electronics

In this work the electrical and structural properties of two high k materials as hafnium oxide (HfO₂) and tantalum oxide (Ta₂O₅) produced at room temperature are exploited. Aiming low temperature processing two techniques were employed: r.f. sputtering and electron beam evaporation.The sputtered HfO₂ films present a nanocrystalline structure when deposited at room temperature. The same does not happen for the evaporated films, which are essentially amorphous. The density and the electrical performance of both sputtered and evaporated films are improved after annealing them at 200 °C. On the other hand, the Ta₂O₅ samples deposited at room temperature are always amorphous, independently of the technique used. The density and electrical performance are not so sensitive to the annealing process. The set of data obtained show that these dielectrics processed at temperatures below 200 °C present promising properties aiming to produce devices at low temperature with improved interface properties and reduced leakage currents.     

Facile Synthesis of SnO2 Nanotube Arrays by Using ZnO Nanorod Arrays as Sacrificial Templates

SnO2 nanotube arrays have been synthesized by means of a simple and low-cost method. The ZnO nanorod arrays prepared by aqueous chemical growth method were used as templates. By liquid phase deposition, SnO2 nanotubes were obtained with proper deposition time. Scanning electron microscopy, transmission electron microscopy and X-ray diffraction were used to characterize the morphologies and structures of the products, and the formation mechanism was discussed according to the experimental results.     

All-solid-state reflectance-type electrochromic devices using iridium tin oxide film as counter electrode

We prepared an all-solid-state reflectance-type electrochromic device (ECD), consisting of the following five layers: Al/WO₃/Ta₂O₅/Ir_xSn_1 − xO₂/ITO. Using RF ion plating, we prepared a film containing dispersed iridium oxide in a tin oxide matrix; this film acts as the counter electrode in the all-solid-state ECD. Protons were used as coloration ions in the ECD. The size of the ECD was 150 cm², and the reflectance changed between more than 60% from 15%. The coloration and bleaching response times were less than a few seconds. We analyze the optical characteristics of the ECD, and report the results of a consecutive drive test and a high-temperature heat resistance test.     

Comparative study on early stages of film growth for transparent conductive oxide films deposited by dc magnetron sputtering

Early stages of film growth were investigated on three different kinds of representative transparent conductive oxide films including tin doped indium oxide (ITO), indium zinc oxide (IZO) and gallium doped zinc oxide (GZO) films deposited on unheated alkali free glass substrates by dc magnetron sputtering. The variations in sheet resistance, film coverage and average surface roughness showed clearly that ITO and GZO films possessed Volmer-Weber growth mode. In contrast, the evolution of islands is not clearly observed for IZO film. The nucleation density of IZO film is considered to be much higher than that of ITO and GZO films.     

纳米氧化物的合成新方法

以草酸和醋酸盐为原料,用低热固相化学反应合成出前驱配合物ＮｉＣ２Ｏ４·２Ｈ２Ｏ,ＣｕＣ２Ｏ４ 和ＺｎＣ２Ｏ４·２Ｈ２Ｏ,再分别在３５０℃,３００ ℃和４６０℃热分解２ｈ,得到纳米ＮｉＯ,ＣｕＯ和ＺｎＯ。用Ｘ－ 射线粉末衍射、透射电镜对产物的组成、大小、形貌进行表征。结果表明,纳米ＮｉＯ为球形立方晶系结构,平均粒径约为４０ｎｍ 左右;纳米ＣｕＯ为球形单斜晶系结构,平均粒径约为３０ｎｍ 左右;ＺｎＯ为粒度分布均匀的球形六角晶系结构,平均粒径约为２０ｎｍ 。     

Highly conductive, undoped ZnO thin films deposited by electron-cyclotron-resonance plasma sputtering on silica glass substrate

The electrical and optical properties of undoped ZnO films deposited by electron cyclotron resonance (ECR) plasma sputtering at room temperature were characterized. The lowest resistivity we achieved was 2.6 × 10^− 3 Ωcm with optical transmittance at visible wavelengths higher than 85%. The X-ray diffraction (002) peak was weak and the rocking curve was asymmetrical, indicating that oxygen vacancies prevented large crystalline domains from forming. At low argon-sputtering-gas pressure, carrier concentration and Hall mobility increased with increasing argon pressure. When the optimum pressure (40 mPa) was exceeded, however, Hall mobility and optical transmittance were severely reduced, which indicated that excess Zn atoms were populated at the interstitials of the network. Admitting only 0.67 mPa of O₂ gas during deposition deteriorated resistivity over 1 MΩcm due to high excitation efficiency in the ECR plasma. Deposition under a higher magnetic field produced lower resistivities.     

Stability of indium-oxide thin-film transistors by reactive ion beam assisted deposition

This work reports on the performance and stability of bottom-gate In₂O₃-TFTs with PECVD silicon dioxide gate dielectric. A highly-resistive amorphous In₂O₃ channel layer was deposited at room temperature by reactive ion beam assisted evaporation (IBAE). The field-effect mobility of the n-channel TFT is 33 cm²/V-s, along with an ON/OFF current ratio of 10⁹, and threshold voltage of 2 V. Device stability was demonstrated through measurement of the threshold voltage shift during long-term gate bias-stress and current stress experiments. Device performance, including stability, together with low-temperature processing, makes the indium-oxide TFT an attractive candidate for flexible transparent electronics, and display applications.