Spectroscopic characterisation of a cross-flow plasma jet

The aim of this work is to study the thermal characteristics and electron density based on atomic and molecular emission of a new plasma jet at atmospheric pressure. The novelty of our jet is its generation with a single electrode, the plasma gas flowing perpendicularly to the RF powered electrode (13.56 MHz, 10³ V). Optical emission of the plasma was collected in two ways: the normal viewing mode and the axial viewing mode. The plasma characteristic parameters as function of helium flow-rate, plasma power and position of the investigated zone were studied. The excitation, vibrational and rotational temperatures are in the range of 1500-2350 K, 3500-4400 K and 450-1100 K, respectively. The electron number densities are in the range of 10¹³-10¹⁴ cm⁻³. For qualitative observations regarding the atomic and molecular processes in the plasma we used the relative intensities of the most representative lines of He, N₂, O, H and .     

Anisotropy of disorder accumulation and recovery in 6H-SiC irradiated with Au ions at 140 K

Single crystal 〈0 0 0 1〉-oriented 6H-SiC was irradiated with Au²⁺ ions to fluences of 0.032, 0.058 and 0.105 ions/nm² at 140 K and was subsequently annealed at various temperatures up to 500 K. The relative disorder on both the Si and C sublattices has been determined simultaneously using in situ D⁺ ion channeling along the 〈0 0 0 1〉 and 〈〉 axes. A higher level of disorder on both the Si and C sublattices is observed along the 〈〉. There is a preferential C disordering and more C interstitials are aligned with 〈0 0 0 1〉. Room-temperature recovery along 〈〉 occurs, which is associated with the 〈0 0 0 1〉-aligned interstitials that annihilate due to close-pair recombination. Disorder recovery between 400 and 500 K is primarily attributed to annihilation of interstitials that are misaligned with 〈0 0 0 1〉 and to epitaxial crystallization. Effects of stacking order in SiC on disorder accumulation are insignificant; however, noticeable differences of low-temperature recovery in Au²⁺-irradiated 6H-SiC and 4H-SiC are observed.     

Radiation induced defects in BaBPO5:Ce and their role in thermally stimulated luminescence reactions: EPR and TSL investigations

Defect centers induced by gamma irradiation in Ce doped BaBPO₅ were investigated using EPR spectroscopy. From EPR studies, three phosphorous centered radicals were characterized on the basis of observed ³¹P hyperfine splitting and g values as , and radicals. In addition to this, two types of boron oxygen hole centers (BOHC) and O⁻ were also formed at room temperature. An intense broad signal in sample annealed in argon (g_⊥ = 1.9258 and g_‖ = 1.8839) was assigned to Ce³⁺ ions associated with the electron trapped at anion vacancy or nearby lattice defect. TSL studies showed two glow peaks, a relatively weaker one at 425 K and an intense one at 575 K. Spectral studies of the TSL glow peaks have shown that Ce³⁺ ion acts as emission center. From the temperature dependence of the EPR spectra of gamma irradiated samples, the glow peaks at 425 K and 575 K were attributed to thermal destruction of /O⁻ and BOHC, respectively, by trapping of electrons from elsewhere. The energy released in electron hole recombination process is used for the excitation of Ce³⁺ ions resulting in these glow peaks at 425 K and 575 K. The spectral studies of the TSL glow peaks have shown emission at 330 nm indicating Ce³⁺ acts as the luminescent centre. The trap depth and the frequency factor for the 425 K and 575 K peaks were determined using different heating rates method.     

Saturation in deuterium retention of CFC graphite targets exposed to beryllium-seeded plasmas on PISCES-B

ITER strike-plates are foreseen to be of carbon-fiber-composite (CFC). In this study the CFC bulk deuterium retention in ITER-relevant conditions is investigated. DMS 701 (Dunlop) CFC targets were exposed to plasma in PISCES-B divertor plasma simulator. Samples were exposed to both pure deuterium plasma and beryllium-seeded plasma at high fluences (up to ) and high surface temperature (1070 K). The deuterium contents of the exposed samples have been measured using both thermal-desorption-spectrometry (TDS) during baking at 1400 K and ion beam nuclear reaction analysis (NRA). The total deuterium inventory has been obtained from TDS while NRA measured the deuterium depth distribution. In the analysed fluence range at target temperature of 1070 K, no fluence dependence was observed. The measured released deuterium is . In the case of target exposure with beryllium-seeded plasma no change in the released amount of deuterium was found. The deuterium concentration inside the samples is almost constant until the probed depth of ?m, except in the first 1 μm surface layer, where it is 5 times higher than in the bulk. No C erosion/redeposition was observed in the Be-seeded plasma cases. The measured retention, applied to 50 m² of ITER CFC surface, would imply a tritium saturated value of 0.3 gT, much lower than the ITER safety limit of 350 g.     

Temperature dependence of damage formation in Ag ion irradiated 4H-SiC

Rutherford backscattering spectrometry (RBS) in channelling mode was used to study the defect formation in silver (Ag) ion irradiated silicon carbide (SiC). The 4H-SiC samples were irradiated with 360 keV Ag ions at different temperatures (15, 295, 375, 475, 625 and 875 K) over a wide range of fluences (1×10¹¹ to , depending on the irradiation temperature). The results can be divided into two groups: (i) for irradiation temperatures between 15 and 475 K amorphisation of the implanted layers is reached for ion fluences between 7×10¹³ and . The over-all cross-section of defect production at very low ion fluences which comprises the formation of point defects and of amorphous clusters, is almost identical for all data sets measured in this temperature range. Differences in the damage evolution which occur at higher ion fluences, suggest that the relative contribution of amorphous clusters within single ion impacts in crystalline material decreases with rising temperature. (ii) For irradiations performed at 625 and 875 K no amorphisation is found for ion fluences as high as . With increasing ion fluence the defect concentration exhibits a distinctive plateau due to the balance between formation and recombination of point defects before increasing up to a saturation level well below amorphisation. For this final stage our results indicate a mixture of point defect clusters and extended defects most probably dislocations. A comparison with data from the literature suggests that the damage evolution for implantation at 625 and 875 K is strongly influenced by the mobility of vacancies starting at around 600 K.     

Measurement of radiation-enhanced diffusion of La in single crystal thin film CeO2

The diffusion of La, a trivalent cation dopant, actinide surrogate, and high-yield fission product, in CeO₂, a UO₂ nuclear fuel surrogate, during 1.8 MeV Kr⁺ ion bombardment over a temperature range from 673 K to 1206 K has been measured with secondary ion mass spectroscopy. The diffusivity under these irradiation conditions has been analyzed with a model based on a combination of sink-limited and recombination-limited kinetics. This analysis yielded a cation vacancy migration energy of  ∼ 0.4 eV below ∼800 K, were recombination-limited kinetics dominated the behavior. The thermal diffusivity of La in the same system was measured over a range of 873-1073 K and was characterized by an activation enthalpy of . The measurement of both the migration enthalpy and total activation enthalpy separately allows the vacancy formation enthalpy on the cation sublattice to be determined;  ∼ 1 eV. The mixing parameter under energetic heavy-ion bombardment at room temperature was measured as well and found to be ∼4 × 10⁻⁵ nm⁵/eV.     

Tracer diffusion of Mn in alloy D9 in presence of sodium

The diffusivity of manganese in vacuum annealed and cold worked alloy D9 in presence of sodium was measured by the standard tracer technique. The lattice diffusion coefficient of manganese in vacuum annealed alloy D9 specimens in the temperature range 773-873 K is given by the expression and that in cold worked alloy D9 specimens is given by where R is in J K⁻¹ mol⁻¹. The activation energy for diffusion in cold worked specimens is less than that in vacuum annealed specimens. The activation energy for diffusion of manganese in presence of sodium is almost four times less than that in various austenitic stainless steels reported in the literature.     

Microstructure and dry-sliding wear properties of DC plasma nitrided 17-4 PH stainless steel

An attempt that the precipitation hardening steel 17-4PH was conducted by DC plasma nitriding (DCPN) is made to develop a kind of candidate material for nuclear reactor. Nitriding process performed at temperature ? 400 °C takes effect on creation of the layers composed of S-phase (expanded austenite) and (expanded martensite). Up to the temperature of 420 °C, the S-phase peaks disappear due to the transformation occurrence (S-phase → + CrN). For the samples nitrided at temperature ? 450 °C, no evidence of is found owing to a precipitation () taking place. For the 480 °C/4 h treated sample, it is the surface microhardness that plays the lead role in the wear rate reduction but the surface roughness; while for the 400 °C/4 h treated sample, it is both of the surface roughness and the S-phase formation. Dry sliding wear of the untreated 17-4PH is mainly characterized by strong adhesion, abrasion and oxidation mechanism. Samples nitrided at 400 °C which is dominated by slight abrasion and plastic deformation exhibit the best dry sliding wear resistance compared to the samples nitrided at other temperatures.     

The vaporisation behaviour of americium dioxide by use of mass spectrometry

The vaporisation behaviour of americium dioxide in vacuum at high temperatures up to 2400 K has been studied. A Knudsen cell coupled with a mass spectrometer was used to perform vapour pressure measurements. The ionisation efficiency curves of Am⁺, AmO⁺ and were simultaneously recorded. Appearance potentials of the key molecular species were determined by varying the energy of the ionising electrons at constant temperature. The partial and total vapour pressures above the americium oxide samples measured as a function of the temperature. The results on the vapour pressure of the pure americium dioxide samples were discussed together with the available literature data on plutonium dioxide containing small amounts of americium. Additional measurements have been performed on a mixed dioxide sample of plutonium containing 6.1 wt.% americium.     

Atomic data and spectral line intensities for Ar XV

Electron impact collision strengths, energy levels, oscillator strengths, and spontaneous radiative decay rates are calculated for Ar XV. The configurations used are 2s², 2s2p, 2p², 2l3l^′, , with giving rise to 92 fine-structure levels in intermediate coupling. Collision strengths are calculated at eight incident energies (10, 20, 30, 60, 120, 180, 240, and 300 Ry) for transitions within the three lowest configurations, and five incident energies (60, 120, 180, 240, and 300 Ry) for transitions between the lowest five levels and the n = 3, 4, 5 configurations, using the distorted wave approximation. Excitation rate coefficients are calculated as a function of electron temperature by assuming a Maxwellian electron velocity distribution. Using the excitation rate coefficients and the radiative transition rates of the present work, and R-matrix results for the 2s², 2s2p, 2p² configurations available in the literature, statistical equilibrium equations for level populations are solved at electron densities covering the range of 10⁸-10¹⁴ cm⁻³ at an electron temperature of , corresponding to the maximum abundance of Ar XV. Spectral line intensities are calculated, and their diagnostic relevance is discussed. Observed line ratios indicate electron temperatures of the relevant emitting plasma close to . This dataset will be made available in the next version of the CHIANTI database.     

Absorption and photoluminescence study of Al2O3 single crystal irradiated with fast neutrons

Colour centers formation in Al₂O₃ by reactor neutrons were investigated by optical measurements (absorption and photoluminescence). The irradiation’s were performed at 40 °C, up to fast neutron (E_n > 1.2 MeV) fluence of 1.4 × 10¹⁸ n cm⁻². After irradiation the coloration of the sample increases with the neutron fluence and absorption band at about 203, 255, 300, 357 and 450 nm appear in the UV-visible spectrum. The evolution of each absorption bands as a function of fluence and annealing temperature is presented and discussed. The results indicate that at higher fluence and above 350 °C the F⁺ center starts to aggregate to F center clusters (F₂, F₂⁺ and ). These aggregates disappear completely above 650 °C whereas the F and F⁺ centers persist even after annealing at 900 °C. It is clear also from the results that the absorption band at 300 nm is due to the contribution of both F₂ center and interstitial ions.     

Ga NMR and magnetic susceptibility in δ-phase of Pu1−xGax (x = 0.05, x = 0.08) alloys

⁶⁹Ga nuclear magnetic resonance spectra, line shifts (⁶⁹K) and nuclear spin-lattice relaxation rate have been measured in the 20 years aged Pu_0.95Ga_0.05 and in fresh prepared Pu_0.92Ga_0.08 alloys, stabilized δ-phase, at magnetic field of 9.4 T in the temperature range (10-500) K. The line shift and are determined correspondingly by the static and fluctuating-in-time parts of the local magnetic field that originates in transferred hyperfine coupling the Ga nuclear spin with the nearest f-electron environment of more magnetic Pu.Temperature behavior of the resonance properties is found the same in fresh Pu_0.92Ga_0.08 and aged Pu_0.95Ga_0.05 alloy. The NMR results are in favor that δ-phase of Pu_1−xGa_x alloys represents at T > 200 K the Kondo lattice, in which the localized electronic spins fluctuate independently from each other without any macroscopic coherence. The coherent state like in heavy-fermion liquids emerges in Pu_0.95Ga_0.05 below T^∗ = 200 K. A little bit higher estimate of crossover temperature T^∗ = 250 K was founded for Pu_0.92Ga_0.08.     

Standard enthalpy of formation of compounds of the Cd-Zr system

Thermodynamic properties of two intermetallic phases CdZr₂(s) and Cd₃Zr(s) in the binary Cd-Zr system have been investigated. The standard molar enthalpy of formation of CdZr₂(s) and Cd₃Zr(s) was obtained by measuring the reaction enthalpy of CdZr₂(s), Cd₃Zr(s) and Zr(s), respectively, using Cd(l) in a Calvet calorimeter. The values of of CdZr₂(s) and Cd₃Zr(s) at 298 K were found to be −(61.7 ± 1.2) kJ mol⁻¹ and −(72.3 ± 0.9) kJ mol⁻¹, respectively.     

Ion beam induced defects in solids studied by optical techniques

Optical methods can provide important insights into the mechanisms and consequences of ion beam interactions with solids. This is illustrated by four distinctly different systems.X- and Y-cut LiNbO₃ crystals implanted with 8 MeV Au³⁺ ions with a fluence of 1 × 10¹⁷ ions/cm² result in gold nanoparticle formation during high temperature annealing. Optical extinction curves simulated by the Mie theory provide the average nanoparticle sizes. TEM studies are in reasonable agreement and confirm a near-spherical nanoparticle shape but with surface facets. Large temperature differences in the nanoparticle creation in the X- and Y-cut crystals are explained by recrystallisation of the initially amorphised regions so as to recreate the prior crystal structure and to result in anisotropic diffusion of the implanted gold.Defect formation in alkali halides using ion beam irradiation has provided new information. Radiation-hard CsI crystals bombarded with 1 MeV protons at 300 K successfully produce F-type centres and V-centres having the structure as identified by optical absorption and Raman studies. The results are discussed in relation to the formation of interstitial iodine aggregates of various types in alkali iodides. Depth profiling of and aggregates created in RbI bombarded with 13.6 MeV/A argon ions at 300 K is discussed.The recrystallisation of an amorphous silicon layer created in crystalline silicon bombarded with 100 keV carbon ions with a fluence of 5 × 10¹⁷ ions/cm² during subsequent high temperature annealing is studied by Raman and Brillouin light scattering.Irradiation of tin-doped indium oxide (ITO) films with 1 MeV protons with fluences from 1 × 10¹⁵ to 250 × 10¹⁵ ions/cm⁻² induces visible darkening over a broad spectral region that shows three stages of development. This is attributed to the formation of defect clusters by a model of defect growth and also high fluence optical absorption studies. X-ray diffraction studies show evidence of a strained lattice after the proton bombardment and recovery after long period storage. The effects are attributed to the annealing of the defects produced.     

Photoluminescence study of swift heavy ion (SHI) induced defect centers in sapphire

Single crystals of sapphire (Al₂O₃: Fe, Ti, Cr) were irradiated at room temperature with different fluence of 100 MeV Ni ions. Photoluminescence (PL) spectra of pristine and irradiated sapphires were recorded at room temperature under 2.8 eV blue excitation. A broad emission band consists of two bands centered at 516 nm corresponding to F₂ defect center and 546 nm corresponding to defect center was observed. The intensity of these defect centers was found to vary with the fluence. defect center develops at low fluence reaching maximum at 5 × 10¹⁶ ions/m² and finally decreasing at higher fluence. The behavior is interpreted in terms of creation of defect centers, their clustering and annihilation.     

Surface morphology and deuterium retention in tungsten oxide layers exposed to low-energy, high flux D plasma

Surface morphology and deuterium retention in tungsten oxide layers (WO_3−z, z ? 0.25) grown on polycrystalline and recrystallized W substrates have been examined after exposure to a low-energy (38 eV/D), high flux (10²² D/m² s) D plasma to an ion fluence of 10²⁶ D/m² at various temperatures (up to ∼700 K). Characterization methods used were scanning electron microscopy, X-ray diffraction, Rutherford backscattering spectroscopy, and the D(³He,p)⁴He nuclear reaction analysis. During exposure to the D plasma at temperatures of 340-615 K, a partial reduction of the tungsten oxide takes place in the near-surface layer up to 0.3 μm in depth. Even at around room temperature, deuterium atoms diffuse several micrometers into the tungsten oxide. The high D concentration of about 0.1 D/W observed in the first micrometers below the surface at temperatures below 500 K can be related mainly to D atoms chemically bonded to O atoms. As the exposure temperature increases, the D concentration decreases, reaching about 2 × 10⁻⁴ D/W at 615 K. At plasma exposure temperatures of about 700 K, the oxide layer shrinks and loses a large fraction of oxygen.     

Electrochemistry of oxygen-free curium compounds in fused NaCl-2CsCl eutectic

This work presents the electrochemical study of Cm(III) in fused NaCl-2CsCl eutectic in the temperature range 823-1023 K. Transient electrochemical techniques such as cyclic, differential pulse and square wave voltammetry, and chronopotentiometry have been used in order to investigate the reduction mechanism of curium ions up to the metal. The results obtained show that the reduction reaction takes place in a single step . The diffusion coefficient of [CmCl₆]^3- complex ions was determined by cyclic voltammetry at different temperatures by applying the Berzins-Delahay equation. The validity of the Arrhenius law was also verified and the activation energy for diffusion was found to be 44.46 kJ/mol. The apparent standard electrode potential of the redox couple Cm(III)/Cm(0) was found by chronopotentiometry at several temperatures. The thermodynamic properties of curium trichloride have also been calculated.