前驱液浓度对Gd2O3∶Tb3+粒度及发光性能的影响

运用多元醇法以二甘醇(DEG)为溶剂,添加适量GdCl3、TbCl3配制成前驱液,在80℃下加入NaOH溶液搅拌合成Gd2O3∶Tb3+纳米晶。为了研究GdCl3溶液浓度对纳米晶粒径及发光性能的影响,配制了不同浓度的GdCl3进行合成实验。结果表明,随着前驱液浓度的提高,纳米晶的粒径不断增大且发光强度也呈上升趋势。在该纳米晶中,Tb3+形成独立的发光中心,发射光谱呈现典型的Tb3+发射曲线,最强发射峰位于544nm(对应5 D4→7F5能级跃迁)附近,该峰伴随前驱液浓度的提高发光强度增强最为明显。最后探讨了Gd2O3∶Tb3+纳米晶的发光机理。     

Influence of Gadolinium Concentration Upon Size of Core-shell Gd2O3 : Tb3+ Nanoparticles

以二甘醇作为溶剂,GdCl3和TbCl3的混合溶液作为前驱剂,在室温下加入NaOH后制备出掺杂Tb3+的纳米氧化物颗粒Gd2O3,并以氧化物Gd2O3∶Tb3+为核,在APTES和TEOS的混合溶液中使其包覆-层聚硅氧烷层.结果表明,随着Gd3+溶液浓度的增加,Gd2O3∶Tb3+颗粒尺寸以及包覆了聚硅氧烷层的核壳结构的纳米颗粒尺寸也增加.     

液相法在Gd2O3:Eu表面包覆SiO2的研究

采用液相法成功的在球形Gd2O3Eu荧光粉颗粒表面包覆一层纳米SiO2保护膜.扫描电镜分析可见包覆SiO2后颗粒粒径略微变大说明表面包覆一层纳米级的包覆层.XPS分析表明SiO2包覆层与Gd2O3Eu颗粒表面以Gd(Eu)-O-Si化学键的方式键合在一起的.荧光光谱分析表明包覆后的Gd2O3Eu3+颗粒仍旧是一种很好的发光材料.     

氯化钆溶液浓度对核壳结构Gd_2O_3∶Tb~(3+)尺寸的影响

以二甘醇作为溶剂,GdCl3和TbCl3的混合溶液作为前驱剂,在室温下加入NaOH后制备出掺杂Tb3+的纳米氧化物颗粒Gd2O3,并以氧化物Gd2O3∶Tb3+为核,在APTES和TEOS的混合溶液中使其包覆一层聚硅氧烷层。结果表明,随着Gd3+溶液浓度的增加,Gd2O3∶Tb3+颗粒尺寸以及包覆了聚硅氧烷层的核壳结构的纳米颗粒尺寸也增加。     

纳米Al2O3的晶型对聚酰亚胺杂化薄膜性能的影响

将经偶联剂处理的纳米Al2O3粉体,借助超声波以一定方式均匀分散于聚酰胺酸溶液中,制备出Al2O3不同晶型、不同含量的PI/纳米Al2O3杂化薄膜,并对杂化薄膜微观形貌、聚集态结构、光透过率、热稳定性、电击穿场强进行研究,分析Al2O3晶型和含量对PI/纳米Al2O3杂化薄膜的结构和性能的影响.结果表明:PI/纳米Al2O3杂化薄膜的热稳定性,电击穿场强均高于纯PI薄膜,且随着纳米Al2O3含量的提高热稳定性也随之提高,电击穿场强先升高后降低;填充Al2O3粉体的晶型对PI薄膜分子链堆积密度有较大的影响,导致添加不同晶型Al2O3的杂化薄膜性能的差异.     

Gd_2O_3/MC尼龙纳米复合材料的制备及性能研究

用原位分散聚合法制备了一系列Gd2O3/ME尼龙纳米复合材料,用SEM观察了Gd2O3纳米粒子在MC尼龙基体中的分散情况,用XRD研究了复合材料的晶体结构,并对复合材料的力学性能进行了表征.研究结果表明:(1)用原位分散聚合法制备Gd2O3//ME尼龙纳米复合材料是可行的,Gd2O3纳米粒子均匀分散在MC尼龙基体中,团聚情况较少;(2)GD2O3纳米粒子没有改变MC尼龙的结晶形态,但使其晶格尺寸发生了一定程度的改变;(3)纳米Gd2O3的加入可明显改善MC尼龙的力学性能,对MC尼龙同时具有增强和增韧双重效果.随着纳米Gd2O3用量的增加,复合材料的拉伸强度、断裂伸长率、缺口冲击强度、弯曲强度和弯曲模量都呈先升后降的趋势.当纳米Gd2O3用量为0.5%时,复合材料的综合性能最好,其拉伸强度、断裂伸长率、缺口冲击强度、弯曲强度和弯曲模量分别比MC尼龙基体提高19.6%、47.2%、19.7%、9.3%%和11.7%.     

Gd_2O_3∶RE~(3+)(RE:Eu,Tb)纳米棒的合成与表征

掺杂Eu和Tb离子的一维稀土氧化物发光材料因具有与其体相材料不同的光谱特性在近年来引起了人们的极大研究兴趣。(Gd0.9Eu0.1)(OH)3和(Gd0.9Tb0.1)(OH)3纳米棒前驱物通过水热法首先被合成,然后经退火处理得到Gd2O3∶RE3+(RE:Eu,Tb)纳米棒。FE-SEM的形貌测试结果表明,Gd2O3∶RE3+(RE:Eu,Tb)纳米棒有约为20～60nm直径和200～500nm长度。XRD的结构测试证实,所得到的Gd2O3∶RE3+(RE:Eu,Tb)纳米棒样品均属于立方晶系。光谱测试结果表明,同体相材料相比,Gd2O3∶RE3+(RE:Eu,Tb)纳米棒的Eu3+和Tb3+的特征发光峰出现了宽化现象,样品的纳米表面效应可能是导致其发光峰宽化的主要原因。     

Ba2Gd2Si4O13∶Dy3+的能量传递和热稳定性研究

利用高温固相反应合成了Ba2Gd2Si4O13∶Dy3+荧光粉,从激发光谱、发射光谱、衰减寿命3个方面详细研究了不同激发波长下Gd3+→Dy3+的能量传递和热稳定性能。研究表明,由于Ba2Gd2Si4O13基质中Gd3+→Dy3+的能量传递,Dy3+在274nm激发的发光强度是在349nm激发的5倍;Ba2Gd2Si4O13∶Dy3+荧光粉表现出较好的热稳定性,在250℃的发光强度为常温的85%;随着加热温度的升高,兰光比黄光强度下降更多,而Gd3+发光有所增加。Ba2Gd2Si4O13∶Dy3+荧光粉可作为潜在的单一基质单一掺杂发光材料。     

Ba2Gd2Si4O13∶Dy3+的能量传递和热稳定性研究

利用高温固相反应合成了Ba2Gd2Si4O13∶Dy3+荧光粉,从激发光谱、发射光谱、衰减寿命3个方面详细研究了不同激发波长下Gd3+→Dy3+的能量传递和热稳定性能。研究表明,由于Ba2Gd2Si4O13基质中Gd3+→Dy3+的能量传递,Dy3+在274nm激发的发光强度是在349nm激发的5倍;Ba2Gd2Si4O13∶Dy3+荧光粉表现出较好的热稳定性,在250℃的发光强度为常温的85%;随着加热温度的升高,兰光比黄光强度下降更多,而Gd3+发光有所增加。Ba2Gd2Si4O13∶Dy3+荧光粉可作为潜在的单一基质单一掺杂发光材料。     

HA:RE(RE=Eu3+、Tb3+)纳米棒的制备与细胞毒性研究

采用EDTA为模板,以CaCO3、NH4H2PO4、Eu2O3、Tb7O4、HNO3为原料,用NH3 H2O调节pH值,成功制备了掺铕羟基磷灰石(HA:Eu3+)及掺铽羟基磷灰石(HA:Tb3+)纳米棒,并采用XRD、场发射环境扫描电子显微镜、荧光光谱、酶联监测仪等对其荧光及细胞毒性进行了研究。结果表明:制备的HA:Eu3+纳米棒最强发射峰位于617 nm处,发射出明亮的红光;制备的HA:Tb3+纳米棒最强发射峰位于544 nm处,发射出明亮的绿光;细胞毒性研究表明HA:RE(RE=Eu3+、Tb3+)纳米棒是一种良好的生物示踪材料。     

Liquid-vapor equilibria in the binary systems AsCl3-1,1,1-C2H3Cl3, AsCl3-1,1,2-C2H3Cl3, and AsCl3-C2HCl3O

Experimental data are presented on the liquid-vapor equilibria in the binary systems AsCl₃-1,1,1-trichloroethane, AsCl₃-1,1,2-trichloroethane, and AsCl₃-dichloroacetyl chloride.__________Translated from Neorganicheskie Materialy, Vol. 41, No. 4, 2005, pp. 503–507.Original Russian Text Copyright © 2005 by Potolokov, Nikolashin, Menshchikova, Fedorov.     

Synthesis and characterization of Mg3Cr2Si3O12-Fe3Cr2Si3O12 garnet solid solutions

Homogeneous garnet Fe₃Cr₂Si₃O₁₂ and its solid solutions with garnet Mg₃Cr₂Si₃O₁₂ (four intermediate samples) were synthesized at high pressure. Garnet Mg₃Cr₂Si₃O₁₂ was not synthesized in pure form. The sample contained traces of the two phases, MgSiO₃ and Cr₂O₃. The products were investigated by means of X-ray powder diffraction and differential scanning calorimetry. Molar volumes of the solid solutions as a function of composition fit linear regression with an accuracy of 0.2%. No difference in heat capacity within the limits of experimental error was detected. In thermodynamic evaluations, the garnet solid solutions Fe₃Cr₂Si₃O₁₂-Mg₃Cr₂Si₃O₁₂ may be treated as ideal solid solutions.     

PbSbBiS4-Sb2S3 and PbSbBiS4-Bi2S3 joins in the PbS-Sb2S3-Bi2S3 system

Phase equilibria along the PbSbBiS₄-Sb₂S₃ and PbSbBiS₄-Bi₂S₃ joins of the PbS-Sb₂S₃-Bi₂S₃ system have been studied for the first time using differential thermal analysis, X-ray diffraction, microstructural analysis, microhardness tests, and density measurements, and the phase diagrams of the joins have been mapped out. The joins are shown to be pseudobinary with limited series of terminal solid solutions. The solid solutions are p-type semiconductors.     

Varistor properties of ZnO-Pr6O11-CoO-Cr2O3-Y2O3-In2O3 ceramics

The varistor properties of the ZnO-Pr₆O₁₁-CoO-Cr₂O₃-Y₂O₃-In₂O₃ ceramics were investigated for different concentrations of In₂O₃. The increase of In₂O₃ concentration slightly increased the sintered density (5.60-5.63 g/cm³) and slightly decreased the average grain size (3.4-2.9 μm). The breakdown field increased from 6023 to 14822 V/cm with increasing concentration of In₂O₃. The nonlinear coefficient increased from 17.6 to 44.6 for up to 0.005 mol%, whereas the further doping caused it to decrease to 36.8. In₂O₃ acted as an acceptor due to the donor concentration, which decreases in the range of 1.02 × 10¹⁷ to 0.24 × 10¹⁷/cm³ with increasing concentration of In₂O₃.     

Influence of BaZrO3, MnCO3 additives on dielectric properties and microstructure of Ba(Zn1/3Nb2/3)O3 ceramics and Ba(Zn1/3Nb2/3)O3-Sr(Zn1/3Nb2/3)O3 solid solutions

The effect of BaZrO₃, MnCO₃ additives on the dielectric properties, sintering temperature and microstructure of Ba(Zn_1/3Nb_2/3)O₃ (BZN) and Ba(Zn_1/3Nb_2/3)O₃-Sr(Zn_1/3Nb_2/3)O₃ (BSZN) ceramics was studied in this paper. It indicates that both BaZrO₃ and MnCO₃ can lower the sintering temperature of the ceramics and accelerate the crystallization of BZN and BSZN. The dielectric constant ɛ _r increases after MnCO₃ added, but decreases when BaZrO₃ added alone. The existence of MnCO₃ can modulate the temperature coefficient of capacitance τ _c toward positive, while BaZrO₃, can make c more negative. MnCO₃ and BaZrO₃ can restrain the appearance of the second phase; while BaZrO₃, can prevent the appearance of the superstructure. In the BSZN system, when 1 mass % MnCO₃ added, sintering temperature(t _s ) is lowered to 1240°C. In this study, the best sample that has the excellent properties is sample 5 with dielectric properties of ɛ _r = 43.6, τ _c = −8 × 10⁻⁶ °C⁻¹ and tan δ = 0.6 × 10⁻⁴ (1 MHz). The sintering temperature of BZN and BSZN system can be lowered to less than 1300°C.     

(La2/3Ca1/3)(Mn(3-x)/3Fex/3)O3体系磁电阻行为的研究

通过系统地测量(La     

Phase developments in the Pb(Zn1/2W1/2)O3-Pb(Zn1/3Ta2/3)O3-Pb(Zn1/3Nb2/3)O3 pseudo-ternary system

The phase stability ranges in the B-site precursor (Zn_1/2W_1/2)O₂-(Zn_1/3Ta_2/3)O₂-(Zn_1/3Nb_2/3)O₂ were determined by X-ray diffraction (XRD), where wolframite, tri-αPbO₂, and columbite phases were identified. Next attempts were carried out (with the addition of PbO) for the system Pb(Zn_1/2W_1/2)O₃-Pb(Zn_1/3Ta_2/3)O₃-Pb(Zn_1/3Nb_2/3)O₃, where the perovskite phase did not develop in the entire compositions investigated. Instead, only the Pb₂WO₅ and pyrochlore phases (along with ZnO) resulted.     

(La2/3Ca1/3)(Mn(3-x)/3)Fex/3)O3体系磁电阻行为的研究

通过系统地测量（La2/3Ca1/3）（Mn（3-x）／3Fex／3）O3（x＝0、0.1、0．2、0．3的体系样品的电阻率-温度关系以及一定温度下磁电阻率与磁场的关系,发现随x的变化其磁电阻率峰和电阻率峰均发生位移,磁电阻率峰值增大,并伴生磁电阻率峰展宽效应．作者认为由于Fe的替代,引起体系中Mn3 ／Mn4 比率及磁矩的变化,加之外场对磁有序结构的调制作用,从而影响了Mn3 －O－Mn4 的双交换作用,最终导致磁电阻行为发生变化．     

Elastic modulus and hardness of CaTiO3, CaCu3Ti4O12 and CaTiO3/CaCu3Ti4O12 mixture

Three ceramic systems, CaTiO₃ (CTO), CaCu₃Ti₄O₁₂ (CCTO) and intermediate nonstoichiometric CaTiO₃/CaCu₃Ti₄O₁₂ mixtures (CTO.CCTO), were investigated and characterized. The ceramics were sintered at 1100 °C for 180 min. The surface morphology and structures were investigated by XRD and SEM. Elastic modulus and hardness of the surfaces were studied by instrumented indentation. It was observed that CCTO presented the higher mechanical properties (E = 256 GPa, hardness = 10.6 GPa), while CTO/CCTO mixture showed intermediate properties between CTO and CCTO.     

Compressive creep behavior of hot-pressed Si3N4-CRE2O3-Al2O3 ceramics

In this work, yttrium-rare earth oxide solid solution, CRE₂O₃, produced at FAENQUIL-DEMAR at a cost of only 20% of pure commercial Y₂O₃, was used as sintering additive of hot-pressed Si₃N₄ ceramics. The objective of this work was to characterize and to investigate the creep behavior of these ceramics. The samples were sintered by hot-pressing at 1750 °C, for 30 min using a pressure of 20 MPa. Compressive creep tests were carried out in air, between 1250 and 1300 °C, for 60 h, under stresses of 200-300 MPa. The stress exponent under all conditions was determined to be about unity. The apparent activation energy obtained was around 460 kJ mol⁻¹, corresponding to the heat of solution of the Si₃N₄ in the glassy phase. Both the stress exponent n and apparent activation energy Q are within the range of values reported in other studies of the compressive creep of Y₂O₃-Al₂O₃-doped-Si₃N₄ ceramics. X-ray diffraction (XRD) characterization shows a global reorientation of the β-Si₃N₄ grains and SEM observations detected no grain growth after the creep tests. These results indicate that grain-boundary sliding controlled by viscous flow is the dominant creep mechanism observed in the present study. The creep resistance presented of this samples indicates that this additive CRE₂O₃ can be a cheap alternative in the fabrication of Si₃N₄ ceramics, resulting in promising mechanical properties.