ELASTIC RECOIL DETECTION ANALYSIS OF LIGHT ELEMENTS IN THIN FILMS USING 35 MeV~(35) Cl~(6+) BEAM

In this paper, an elastic recoil detection analysis method is described using 35 MeV ~(35)Cl as incident ions. This method can determine and profile simultaneously H, D, He, C and O or in the other case, H, C, N and O. The depth resolution for the elements heavier than He is better than 20 nm. It has been applied to study the Co/Si and TiN thin films, and the depth profiles of He implanted in monocrystal silicon.     

Development of enhanced depth-resolution technique for shallow dopant profiles

A rapid shrinkage in the minimum feature size of integrated circuits requires analysis of dopants in their shallow source–drain and their extensions with an enhanced depth resolution. Rutherford backscattering spectroscopy (RBS) combining a medium-energy He ion beam with a detector of improved energy resolution should meet the requirement of a depth resolution better than 5 nm at a depth of 10–20 nm in the next 10 years. A toroidal electrostatic analyzer of 4×10⁻³ energy resolution has been used to detect the scattered ions of a medium-energy He ion beam. Five keV As⁺ implanted Si or SiO₂ samples were measured. Depth profiling results using the above technique are compared with those of glancing-angle RBS by MeV energy He ions. Limitations in the energy resolution due to various energy-spread contributions have been clarified.     

回旋加速器质谱技术中氚和氦—3粒子的探测和鉴别

在利用回旋加速器质谱技术进行氚断代的测量中,工作气体是电解水样品时收集到的含氚氢气,并混入少许一定量的空气。空气中的微量~3He和样品中的~3H同时加速并被用作参考标准以监督加速器的束流变化。描述了利用金硅面垒探测器望远镜和铝吸收箔的组合来探测和鉴别~3H和~3He的实验方法和结果。     

Time-of-flight spectrometry for materials analysis

A time-of-flight spectrometer for investigation of solids has been built. This type of spectrometer can be used for forward- and backward-scattering experiments. The scattered or recoiled ions are discriminated by a pair of C-foils. The emitted secondary electrons are detected by channel plates and are used as start and stop signals. Depth profiles up to 500 nm were measured with a depth resolution of 3 nm. The best mass resolution achieved under optimal conditions is 1 u. For example, the two Ga isotopes from GaAs samples have been separated. He, N, Ne and Ar ions with energies up to 10 MeV have been used as projectiles.     

用~(14)N(d,α_1)~(12)C核反应研究注入氮在纯铁和GCr15钢中的深度分布

本文描述了利用~(14)N(d,a_1)~(12)C核反应测量固体样品表面层内氮原子含量及深度分布的方法。在Si_3N_4标准样品中,所得到的表面处的深度分辨为48nm。利用该分析手段,研究了在不同注入温度条件下,氮离子注入纯铁和GCr15钢的保留量及深度分布的变化情况。     

Surface exfoliation and defect structures in Si induced by 160 keV He and 110 keV H ion implantation

Cz n-type Si(100) wafers were implanted at room temperature with 160 keV He ions at a fluence of 5 × 10¹⁶/cm² and 110 keV H ions at a fluence of 1 × 10¹⁶/cm², singly or in combination. Surface phenomena and defect microstructures have been studied by various techniques, including scanning electron microscopy (SEM), atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM). Surface exfoliation and flaking phenomena were only observed on silicon by successive implantation of He and H ions after subsequent annealing at temperatures above 400 °C. The surface phenomena show strong dependence on the thermal budget. At annealing temperatures ranging from 500 to 700 °C, craters with size of about 10 μm were produced throughout the silicon surface. As increasing temperature to 800 °C, most of the implanted layer was sheared, leaving structures like islands on the surface. AFM observations have demonstrated that the implanted layer is mainly transfered at the depth around 960 nm, which is quite consistent with the range of the ions. XTEM observations have revealed that the additional low fluence H ion implantation could significantly influence thermal growth of He-cavities, which gives rise to a monolayer of cavities surrounded by a large amount of dislocations and strain. The surface exfoliation effects have been tentatively interpreted in combination of AFM and XTEM results.     

Enhanced hydrogen trapping due to He ion damage

Single crystals and rolled foil of Mo with and without predamage by 11 or 18 keV⁴ He at room temperature have been injected with 8 or 16 keV H and D isotopes. The H depth profiles and the total D retention were measured by nuclear microanalysis techniques. A strong enhancement in the trapping of hydrogen isotopes after He predamage over Mo without predamage is observed and the H depth profiles scale with the He ion energy. Cold work increases the D trapping in the absence of He damage but after 3 × 10¹⁵ He/cm² predamage little difference remains in the total trapping for single crystals and rolled foil. The release of the D upon annealing due to detrapping occurs primarily between 100 and 450°C. A similar fractional reduction in trapping is observed for elevated temperature D injection as is found in the anneal to corresponding temperatures of room temperature injected samples.     

Development of a TOF-ERDA measurement system for analysis of light elements using a He beam

A time-of-flight ERDA (TOF-ERDA) measurement system has been developed for the analysis of light elements. He ions are used for the incident beam, and recoil light ions are detected with the system. The system consists of a time detector and a silicon detector, and energy and velocity of recoil ion are measured simultaneously. The depth resolution of 21.6 ± 2.2 nm (FWHM) has been obtained by an ERDA measurement of a thin carbon layer onto a silicon wafer using a 5.7 MeV He beam. The mass resolution is better than 1 for elements up to oxygen. Maximum detectable depth of carbon in a PET film is about 650 nm. An ERDA measurement of implanted carbon in a silicon wafer has been demonstrated.     

Vacancy-type defect production in CLAM steel after the co-implantation of He and H ion beams studied by positron-annihilation spectroscopy

Vacancy-type defects induced by the co-implantation of He and H ions in China low activation martensitic (CLAM) steel at room temperature were investigated by variable-energy position beam Doppler broadening spectra (DBS). The co-implantation occurred in two patterns. In one pattern, He ions were implanted before H ions; the other pattern was of the opposite sequence. Both He- and H-vacancy complexes were formed for pre-implanted He and H at different fluences. He–H-vacancy complexes were formed for pre-implanted He, which caused the S parameter of the pre-implanted He to be smaller than that of H at the lowest fluence. The defect density increased with increased fluence for the two implanted patterns, and the difference between the S parameters of pre-implanted H and He decreased with increased fluence. Nanovoids containing a few He atoms were the dominating defects at high implanted fluences for the two kinds of implantation.     

Ion beam induced luminescence of polyethylene terephthalate foils under MeV H and He ion bombardment

The evolution of the ion beam induced luminescence (IBIL) of the polyethylene terephthalate (PET) foils was studied under the irradiation of H and He ions of MeV energy. The optical and chemical changes of the samples were also examined by photo-stimulated luminescence and optical absorption measurements after the irradiation. A prominent broad emission peak of IBIL appeared at around 380 nm, and its intensity monotonically decreased during the ion irradiation. The decay curves of the emission intensity were quantitatively explained as a function of the electronic energy deposition of the incident H and He ions. On the contrary, to the decrease of the main emission peak, a growth of new peaks was observed in the wavelengths between 500 and 600 nm.     

Depth profiling of Al2O3 + TiO2 nanolaminates by means of a time-of-flight energy spectrometer

Atomic layer deposition (ALD) is currently a widespread method to grow conformal thin films with a sub-nm thickness control. By using ALD for nanolaminate oxides, it is possible to fine tune the electrical, optical and mechanical properties of thin films. In this study the elemental depth profiles and surface roughnesses were determined for Al₂O₃ + TiO₂ nanolaminates with nominal single-layer thicknesses of 1, 2, 5, 10 and 20 nm and total thickness between 40 nm and 60 nm. The depth profiles were measured by means of a time-of-flight elastic recoil detection analysis (ToF-ERDA) spectrometer recently installed at the University of Jyväskylä. In TOF-E measurements ⁶³Cu, ³⁵Cl, ¹²C and ⁴He ions with energies ranging from 0.5 to 10 MeV, were used and depth profiles of the whole nanolaminate film could be analyzed down to 5 nm individual layer thickness.     

C276合金的抗辐照性能研究

C276合金为包壳部件的候选材料之一，本文拟对其抗辐照性能进行研究。对C276合金进行质子及多束粒子辐照，利用纳米硬度仪、透射电镜、拉曼成像仪等研究了C276合金在辐照前后的试样。结果表明：在质子及多束粒子辐照下，辐照损伤区域发生C偏析和位错环硬化；在H或He单束辐照条件下，在35.0 μm或3.5 μm深度处，拉曼光谱中的碳峰相对强度较大且碳峰红移，引起此处的纳米硬度较其他深度处的高；试验得到的损伤峰对应的深度与模拟计算得到的吻合。可推知，C276合金在质子及多束粒子下的辐照硬化是辐照偏析及可能的位错环硬化综合作用的结果。     

Rutherford backscattering spectroscopy and elastic recoil detection analysis with lithium ions – The better alternative to helium?

Rutherford backscattering spectroscopy (RBS) and elastic recoil detection analysis (ERDA) with lithium ions are compared to using helium ions. The availability and accuracy of backscattering cross-section and stopping power data for incident Li ions are reviewed, and energy broadening contributions due to detector resolution and energy loss straggling are discussed. Theoretical calculations of the depth resolution are compared with experimental data for RBS from Nb/Co multilayers and foil-ERDA from amorphous hydrogenated carbon multilayers. In RBS about the same or better depth resolution with Li than with He is achieved, while in ERDA for the detection of hydrogen isotopes the depth resolution is increased by a factor of about 1.5 compared to incident He.     

Depth resolution and recoil cross section for analyzing hydrogen in solids using elastic recoil detection with 4He beam

Two aspects of the elastic recoil detection technique for analyzing H and D are described; i) experimental factors which effectively limit the depth resolution in Al film, and ii) determination of the recoil cross section for H(⁴He, ⁴He)H and D(⁴He, ⁴He)D reactions in the range of 1.5–3.0 MeV energy of ⁴He. Both experimental and theoretical estimates of the depth resolution are presented and are in good agreement each other. The theoretical estimate therefore provides a reliable guide to find optimum resolution conditions. The recoil cross section for H is more than double the theoretical Rutherford scattering value and that for D becomes greater than 30 times Rutherford near the resonance energy of 2.1 MeV ⁴He.     

Depth distribution profiling of deuterium and 3He

A technique using nuclear microanalysis has been developed to determine ²D an ³He concentrations versus depth profiles in the near surface regions (～2 μm) of solids. Ultimate near-surface depth resolutions of (≈100 Å) should be attainable by these techniques. A probing beam of ³He ions is used to analyze for the deuterium. By energy analyzing the emitted ⁴He ions from the reaction d(³He,p)⁴He and by simple computer analysis, deuterium concentration versus depth profiles are obtained. The same methods are applicable for ³He profiling except in that case a ²D probing beam is used. The techniques is currently being developed using Er hydride and Sc hydride films. It is particularly suited for the study of the transition metals with high hydrogen solubility such as Nb and V which are of interest for CTR reactor applications.     

2 keV He and Ne ion scattering on a Cu(110) surface: Experiment vs simulation

Scattering experiments performed at 143° with a TOF-ISS system on a Cu(110) single crystal indicate the very different sampling depth of He ions as compared with Ne ions. The ISS polar scans measured with He ions show a high sensitivity to the bulk atomic rows of the single crystal, whereas the scans measured with Ne ions indicate a sensitivity to only a couple of atoms in the first atomic layers. In order to evaluate the depth sampled by the backscattered particles, ion trajectories have been calculated with the MARLOWE simulation code. With Ne, the simulation shows that backscattered particles arise only from the 4 first layers (5 Å), but with He ions, they come from at least 80 layers (100 Å). A detailed analysis of escaping trajectories indicates that the Ne projectiles are scattered from the first layers after short trajectories. On the other hand, helium trajectories are usually quite complex, due to the possibility to follow privileged directions (channels), so that the projectiles can scatter from deep layers. We see that, even at low energy, channeling may be the major contributor to the variations of the backscattered intensity.     

Radiation-induced luminescence of PET and PEN films under MeV ion and pulsed UV laser irradiation

Ion- and photo-induced luminescence of polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) films was investigated during irradiation by MeV H and He ions and an ultraviolet pulsed laser. At the beginning of ion irradiation, the PEN film emitted blue luminescence, whose intensity was an order of magnitude higher than that emitted by the PET film. Successive ion irradiation effectively reduced the luminescence centers, and the rate of decease in luminescence intensity depended on the energy deposited along the trajectory of the ions. Optical absorption measurements in the infrared region revealed an irradiation-sensitive feature of the PEN film. Moreover, a photo-induced band grew remarkably at 470 nm in the PET film under 266 nm pulsed laser irradiation, while the PEN film showed a moderate decrease in luminescence intensity at 440 nm.     

Hydrogen trapping in molybdenum in the presence of radiation damage

Hydrogen was implanted in samples of single crystal molybdenum, many of which had been previously damaged by ⁴He at 18 or 150 keV. The hydrogen implantations were at low energies, usually at 10 keV. Depth profiles (up to 200 nm) of the trapped hydrogen were obtained using the nuclear reaction ¹H)(¹⁹F, αγ)¹⁶O. A comparison of the trapping efficiency per dpa for both high and low helium concentrations, realized by the 18 and the 150 keV ⁴He implant, respectively, indicates that the presence of the implanted helium contributes to the trapping of hydrogen, possibly through the inhibition of damage annealing.     

Cross sections for K-shell ionization by 1H, 2H, 3He,and 4He ion impact

Cross section for K-shell ionization derived from experimental measurements with the light ions ¹H, ²H, ³He, and ⁴He are tabulated according to projectile energy and target atomic number.     

Rutherford backscattering (RBS) with lithium ions

⁷Li ions at 4.5 MeV and ⁴He ions at 1.5 MeV were scattered at 170° from the same target under the same conditions. The distribution of elements as a function of distance from the surface is more clearly revealed with ⁷Li than ⁴He. We have rewritten our RBS analysis program to handle all ion beams and to take into account the normal isotopic abundance of the target elements. With 4.5 MeV ⁷Li ions the minority isotopes can not be ignored, even with silicon. At present, the accuracy for determining elemental depth profiles with ⁷Li is limited by the accuracy of Li ion stopping powers.