半导体气敏元件自动检测装置的研究

对气体传感器性能的检测,将直接影响到传感器的质量、应用和发展,只有把气体传感器的各项参数精确的测试清楚,才能可靠的发挥其作用。该装置通过配气系统和计算机测试系统对气敏元件的各项参数进行检测,从而大大提高了检测气敏元件的精密度。     

半导体气敏元件自动检测装置的研究

对气体传感器性能的检测，将直接影响到传感器的质量，应用和发展，只有把气体传感器的各项参数精确的测试清楚，才能可靠的发挥其作用，该装置通过配气系统和计算机测试系统对气敏元件的各项参数进行检测，从而大大提高了检测气敏元件的精密度。     

用于手术剪的超高频无源小型化RFID标签天线设计

为了加强对医疗器械的跟踪管理,尤其是对手术前后手术剪数量的有效监测,设计了一款可应用于手术剪的超高频(UHF)无源小型化射频识别(RFID)标签天线。该标签天线采用集总元件加载技术以及短路技术方法实现了天线的小型化设计。通过对电容容值以及天线结构尺寸的调整,可实现对标签天线谐振频率以及标签天线特性阻抗的调节。标签天线结构参数经仿真优化,最终设计尺寸为6 mm×3 mm×1 mm。标签嵌入手术剪中的最大读取距离为1.2 m。根据仿真结果对天线加工并对实物进行测试,测试结果与仿真结果吻合较好。     

三自由度介电型EAP软材料位置传感器研究

基于介电型电活性聚合物(EAP)变形时的电容值变化原理,设计并实现一种三自由度软材料位置传感器,其内框可沿平面和法向移动,分别用于检测平面和法向位移。建立该传感器的几何模型,推导出其电容值变化和内框位移的关系。采用差分法测试该传感器的电容值变化,分析了面对面两个传感单元的电容值差和内框的平面位移、单个传感单元的电容值和内框的法向位移之间的关系,测试得到其平面和法向位移灵敏度分别为66.69pF/mm、0.47pF/mm~2,与理论分析结果较吻合。该位置传感器的理论与测试分析结果验证了介电型EAP应用于位置传感器中的可行性。     

基于微加热板的三维SnO_2薄膜乙醇传感器

为了提高气敏传感器性能,设计并制备了玻璃基底的微加热板,包括加热电极和测试叉指电极(IDE),基于微加热板,利用聚苯乙烯(PS)微球作为掩模,使用多次光刻-剥离工艺制备三维多孔SnO_2薄膜传感器,研究了有无微球和微球直径对于传感器气敏性能的影响。采用扫描电子显微镜(SEM)和原子力显微镜(AFM)对多孔表面形貌进行观察和表征。通过测试不同条件制备的传感器对于乙醇气体的气敏性能,得到使用直径1μm微球作为掩模制备的传感器性能更好,在约220℃的工作温度下,对体积分数为10-4的乙醇气体有3.5的灵敏度,并对传感器的重复性和线性度进行了测试。     

集成气体传感器的进展

本文综述了集成气体传感器的发展过程的工作机理，讨论了Ｓｃｈｏｔｔｋｙ气敏二极管、ＭＯＳ气敏二极管、ＭＯＳ气敏场效应厚膜集成气体传感器和集成气体传感器阵列。     

光纤气敏传感系统的研究

简述了光纤气体传感原理,详细说明气敏光纤传感器中传感单元结构的设计,并对汽油气体进行检测,达到预期效果.     

三氧化钨基复合敏感器件的构筑与气敏性质研究

针对无机、有机气敏材料各自的缺点,本文制作了有机无机复合型气体传感器。先用水热法制备出棒状三氧化钨粉体,利用XRD、SEM测试手段进行了表征。制备的粉体与金属酞菁配合物复合,制作双层旁热式气体传感器,按照静态法测试了其气敏特性,与复合前比,灵敏度升高,在室温下对NO2气体响应时间缩短,更有利于其应用。     

CO／H2集成FET型气敏传感器的研究

本文初步探讨了FET型气敏传感器的敏感机理,采用N阱双极MOS兼容工艺,将CO,H_2气敏单元,择优差分型气敏单元、加热单元、温敏单元单片集成,制作了可调高温的具有高稳定输出的芯片自恒温系统,研制出具有良好的选择性和稳定性,较高灵敏度的集成MOS气敏传感器.     

Pd掺杂SnO2厚膜CO2气体传感器的制备及其气敏特性研究

当前CO2的过度排放引发了一系列的环境问题,CO2的检测技术成为气体传感器研究领域的热点.半导体气敏传感器是气体传感器研究的主流方向之一,其中丝网印刷法是制备厚膜传感器的最常见的方法.本文采用纳米SnO2作为主要的气敏材料,制备了不同Pd掺杂含量的SnO2浆料,然后采用丝网印刷法制备了SnO2厚膜CO2气体传感器.研究...     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.