Compositional dependence on the optical properties of amorphous As2 − xS3 − xSbx thin films

In this paper, we report results of the optical properties of thermally deposited As_2 − xS_3 − xSb_x thin films with x = 0.02, 0.07, 0.1 and 0.15. We have characterized the deposited films by Fourier Transform Infrared, Raman and X-ray photoelectron spectroscopy (XPS). The relationship between the structural and optical properties and the compositional variation were investigated. It was found that the optical bandgap decreases with increase in Sb content. The XPS core level spectra show a decrease in As₂S₃ percentage with increase in Sb content. This is confirmed from the shifting of the Raman peak from AsS₃ vibrational mode towards SbS₃ vibrational mode.     

Study of flash evaporated CuIn1 − xGaxTe2 (x = 0, 0.5 and 1) thin films

CuIn_1 − xGa_xTe₂ thin films with x = 0, 0.5 and 1, have been prepared by flash evaporation technique. These semiconducting layers present a chalcopyrite structure. The optical measurements have been carried out in the wavelength range 200-3000 nm. The linear dependence of the lattice parameters as a function of Ga content obeying Vegard's law was observed. The films have high absorption coefficients (4 · 10⁴ cm^− 1) and optical band gaps ranging from 1.06 eV for CuInTe₂ to 1.21 eV for CuGaTe₂. The fundamental transition energies of the CuIn_1 − xGa_xTe₂ thin films can be fitted by a parabolic equation namely E_g1(x) = 1.06 + 0.237x − 0.082x². The second transition energies of the CuInTe₂ and CuGaTe₂ films were estimated to be: E_g2 = 1.21 eV and E_g2 = 1.39 eV respectively. This variation of the energy gap with x has allowed the achievement of absorber layers with large gaps.     

Characterization and ozone-induced coloration of ZnxNi1 − xO thin films prepared by sol-gel method

Zn_xNi_1 − xO thin films were prepared by sol-gel spin coating method onto glass substrates in combination with annealing process. Effect of zinc content on the structural, optical and ozone-induced coloration properties of as-prepared films was investigated by X-ray diffraction, field emission-scanning electron microscope, atomic force microscopy and UV-VIS spectrophotometer, respectively. X-ray diffraction results reveal that the structures of all films are still cubic NiO structure. Average grain size of Zn_xNi_1 − xO film increases with increasing annealing temperature and its crystallization is strongly affected by Zn content. Coloration of the films was obtained after UV/ozone exposure due to a presence of ozone-induced hydroxyl groups. Significant enhancement of coloration efficiency of the films is achieved as content of Zn increases.     

Forbidden energy band gap in diluted a-Ge1 − xSix:N films

By means of electron gun evaporation Ge_1 − xSi_x:N thin films, in the entire range 0 ≤ x ≤ 1, were prepared on Si (100) and glass substrates. The initial vacuum reached was 6.6 × 10^− 4 Pa, then a pressure of 2.7 × 10^− 2 Pa of high purity N₂ was introduced into the chamber. The deposition time was 4 min. Crucible-substrate distance was 18 cm. X-ray diffraction patterns indicate that all the films were amorphous (a-Ge_1 − xSi_x:N). The nitrogen concentration was of the order of 1 at% for all the films. From optical absorption spectra data and by using the Tauc method the energy band gap (E_g) was calculated. The Raman spectra only reveal the presence of SiSi, GeGe, and SiGe bonds. Nevertheless, infrared spectra demonstrate the existence of SiN and GeN bonds. The forbidden energy band gap (E_g) as a function of x in the entire range 0 ≤ x ≤ 1 shows two well defined regions: 0 ≤ x ≤ 0.67 and 0.67 ≤ x ≤ 1, due to two different behaviors of the band gap, where for x > 0.67 exists an abruptly change of E_g(x). In this case E_g(x) versus x is different to the variation of E_g in a-Ge_1 − xSi_x and a-Ge_1 − xSi_x:H. This fact can be related to the formation of Ge₃N₄ and GeSi₂N₄ when x ≤ 0.67, and to the formation of Si₃N₄ and GeSi₂N₄ for 0.67 ≤ x.     

Si1 − xGex metal-oxide-semiconductor capacitors with HfTaOx gate dielectrics

Interfacial reactions and electrical properties of RF sputter deposited HfTaO_x high-k gate dielectric films on Si_1 − xGe_x (x = 19%) are investigated. X-ray photoelectron spectroscopic analyses indicate an interfacial layer containing GeO_x, Hf silicate, SiO_x (layer of Hf-Si-Ge-O) formation during deposition of HfTaO_x. No evidence of Ta-silicate or Ta incorporation was found at the interface. The crystallization temperature of HfTaO_x film is found to increase significantly after annealing beyond 500 °C (for 5 min) along with the incorporation of Ta. HfTaO_x films (with 18% Ta) remain amorphous up to about 500 °C anneal. Electrical characterization of post deposition annealed (in oxygen at 600 °C) samples showed; capacitance equivalent thickness of ~ 4.3-5.7 nm, hysteresis of 0.5-0.8 V, and interface state density = 1.2-3.8 × 10¹² cm^− 2 eV^− 1. The valence and conduction band offsets were determined from X-ray photoelectron spectroscopy spectra after careful analyses of the experimental data and removal of binding energy shift induced by differential charging phenomena occurring during X-ray photoelectron spectroscopic measurements. The valence and conduction band offsets were found to be 2.45 ± 0.05 and 2.31 ± 0.05 eV, respectively, and a band gap of 5.8 ± 05 eV was found for annealed samples.     

MgxZn1−xO (x = 0-1) films fabricated by sol-gel spin coating

Mg_xZn_1−xO films were deposited onto the glass substrate by a sol-gel spin coating method. The drying and annealing temperatures were 300 and 500 °C in air. As x varies from 0 to 1, it was observed that the crystal structure is changed from wurtzite ZnO to cubic MgO. The morphology characterizations of these films were observed by scanning electron microscope. The randomly oriented hexagonal nanorods were gown on the glass surface when x = 0 and 0.25, which became disappeared with increasing Mg contents. The optical properties of these films were investigated by room-temperature photoluminescence (PL) and UV-vis absorption spectra, which show that the optical band gap and photoluminescence in the visible and UV regions can be ideally tuned by varying the Mg contents in the Mg_xZn_1−xO alloy films.     

Structural, electrical and optical properties of transparent Zn1 − xMgxO nanocomposite thin films

Zn_1 − xMg_xO thin films of various Mg compositions were deposited on quartz substrates using inexpensive ultrasonic spray pyrolysis technique. The influence of varying Mg composition and substrate temperature on structural, electrical and optical properties of Zn_1 − xMg_xO films were systematically investigated. The structural transition from hexagonal to cubic phase has been observed for Mg content greater than 70 mol%. AFM images of the Zn_1 − xMg_xO films (x = 0.3) deposited at optimized substrate temperature clearly reveals the formation of nanorods of hexagonal Zn_1 − xMg_xO. The variation of the cation-anion bond length to Mg content shows that the lattice constant of the hexagonal Zn_1 − xMg_xO decreases with corresponding increase in Mg content, which result in structure gradually deviating from wurtzite structure. The tuning of the band gap was obtained from 3.58 to 6.16 eV with corresponding increase in Mg content. The photoluminescence results also revealed the shift in ultraviolet peak position towards the higher energy side.     

Effect of sputtering power on the properties of Cd1 − xZnxTe films deposited by radio frequency magnetron sputtering

Cd_1 − xZn_xTe films were prepared by radio frequency (r.f.) magnetron sputtering from Cd_0.9Zn_0.1Te slices target with different sputtering power (60-120 W). The effects of sputtering power on the properties of Cd_1 − xZn_xTe films were studied using X-ray diffraction (XRD), energy dispersive X-ray (EDX), atomic force microscopy (AFM), ultraviolet spectrophotometer and Hall effect measurements. The composition of the deposited films was determined by EDX. The Cd content was found always to be higher than the Te content, regardless of sputtering power. This behavior may be explained by the preferential sputtering of cadmium atoms in the target. XRD studies suggest that ZnTe secondary phases were coexisted in Cd_1 − xZn_xTe films. The origin of the secondary phase is ascribed to the lowest sticking coefficient of Zn atom. AFM micrographs show that the grain size increases with the sputtering power. The optical transmission data indicate that shallow absorption edge occurs in the range of 750-850 nm, and the sputtering power does not have a clear effect on the optical absorption coefficient. In Hall Effect measurements, the sheet resistivities of the deposited films are 1.988 × 10⁸, 8.134 × 10⁷, 8.088 × 10⁷ and 3.069 × 10⁷ Ω/sq, respectively, which increase with the increasing of sputtering power.     

Electrical transport and structural study of CuCr1 − xMgxO2 delafossite thin films grown by pulsed laser deposition

The growth and properties of delafossites CuCr_1 − xMg_xO₂ thin films are examined. These films are grown by pulsed laser deposition. As a class of materials delafossites have received recent interest since some members show p-type behavior. While not considered true wide-bandgap materials due to a narrow indirect bandgap that fails to adsorb light due to a forbidden same parity transition, optical transparencies greater than 40% in the visible can be observed. In order to be useful for transparent device applications, CuCr_1 − xMg_xO₂ films are needed with low resistivity and high optical transparency. Epitaxial films of CuCr_1 − xMg_xO₂ were grown on c-sapphire, examining the effects of oxygen pressure and growth temperature on film properties. Films were realized with resistivity of ~ 0.02 Ω-cm and optical transparency of 40% in the visible. The formation of a problematic secondary minority spinel phase of (Cu,Mg)Cr₂O₄ is discussed. While conductivity increases substantially with Mg doping, the incidence of the spinel phase increases as well.     

High-frequency magneto-electrical properties of Zn1 − x − yAlxCoyO thin films

The Al doping effects on high-frequency magneto-electric properties of Zn_{1 − x − y}Al_xCo_yO (x = 0-10.65 at.%) thin films were systematically studied. In the current work, the Zn_{1 − x − y}Al_xCo_yO thin films were deposited by magnetron co-sputtering onto quartz substrates. The magneto-impedance spectra of the thin films were measured by an impedance analyzer. Among all the doped films studied, the thin film with 6.03 at.% Al-doping showed the highest ac conductivity and relaxation frequency. To characterize the relaxation mechanism underlying the magneto-electric properties, a Cole-Cole impedance model was applied to analyze the impedance spectra. The analyzed result showed that the magneto-impedance of the Zn_{1 − x − y}Al_xCo_yO is contributed by multiple processes of magnetization dynamics and dielectric relaxation. The results imply that Zn_{1 − x − y}Al_xCo_yO may be applicable for high-frequency magneto-electric devices.     

Synthesis and characterization of (CuO)x(ZnO)1 − x composite thin films with tunable optical and electrical properties

Mixed (CuO)_x(ZnO)_1 − x composite films have been prepared on glass substrates by a sol-gel spin coating method using copper acetate hydrate and zinc acetate dihydrate as precursors. The surface morphology and crystal structure of the films were investigated by field emission scanning electron microscopy and x-ray diffraction, respectively. It was observed that the crystal structure changed from wurtzite (ZnO) to monoclinic (CuO) as the Cu content increased from 0% to 100% in the films. UV-Vis absorption and photoluminescence measurements indicated that the optical properties can be tuned continuously from pure ZnO to pure CuO as the Cu content was increased, following the expected trends for a transition from ZnO to CuO. The resistivity of the films decreased by three orders of magnitude as Cu increased from 0% to 100%. These semiconducting composite oxides with tunable optical and electrical properties have potential applications in electronics and optoelectronics.     

Characterization of Zn1 − xMgxO transparent conducting thin films fabricated by multi-cathode RF-magnetron sputtering

Transparent conducting thin films of Al-doped and Ga-doped Zn_1 − xMg_xO with arbitrary Mg content x were deposited on glass substrates by simultaneous RF-magnetron sputtering of doped ZnO and MgO targets, and their fundamental properties were characterized. MgO phase separation in Zn_1 − xMg_xO films was not detected by X-ray diffraction. The Zn_1 − xMg_xO films show high optical transparency in the visible region. Although the carrier density of the Zn_1 − xMg_xO films decreased with increasing x, the Zn_1 − xMg_xO films showed good electrical conductivity; electrical resistivity as low as 8 × 10^− 4 Ω ·cm was achieved for the Zn_0.9Mg_0.1O:Ga thin film.     

Structural and optical properties of rock-salt Cd1 − xZnxO thin films prepared by thermal decomposition of electrodeposited Cd1 − xZnxO2

Cd_1 − xZn_xO nanocrystalline thin films with rock-salt structure were obtained through thermal decomposition of Cd_1 − xZn_xO₂ (x = 0, 0.37, 0.57, 1) thin films which were electrodeposited from aqueous solution at room temperature. X-ray diffraction results showed that the Zn ions were incorporated into rock salt-structure of CdO and the crystal lattice parameters decreased with the increase of Zn contents. The bandgaps of the Cd_1 − xZn_xO thin films were obtained from optical transmission and were 2.40, 2.51, 2.63 and 3.25 eV, respectively.     

Electrical and optical investigations on Pb1 − 3x/2LaxZr0.2Ti0.8O3 thin films obtained by radiofrequency assisted pulsed laser deposition

Thin films of ferroelectric relaxor Pb_1 − 3x/2La_xZr_0.2Ti_0.8O₃, x = 0.22 have been integrated in an oxidic heterostructure for electro-optical investigations. The quadratic electro-optic behavior and optical properties have been studied by means of variable angle spectroscopic ellipsometry method in reflection mode. Birefringence values up to δΔ = 0.17° have been obtained for quadratic compositions at λ = 540 nm and 65° angle of incidence. Structural, chemical and morphologic properties of Pb_1-3x/2La_xZr_0.2Ti_0.8O₃ (x = 0.22) thin films have been investigated by x-ray diffraction and atomic force microscopy techniques. The dielectric and ferroelectric behavior has been investigated using dielectric spectroscopy and a ferroelectric test system.     

Study of GeYSi1 − Y:H films deposited by low frequency plasma

In this work, we report a study of the optical properties measured through spectral transmission and spectroscopic ellipsometry in Ge:H and Ge_YSi_1 − Y:H (Y ≈ 0.97) films deposited by low frequency (LF) PE CVD with hydrogen (H) dilution. The dilution was varied in the range of R = 20 to 80. It was observed that H-dilution influences in a different way on the interface and bulk optical properties, which also depend on incorporation of silicon. The films with low band tail characterized by its Urbach energy, E_U, and defect absorption, α_D, have been obtained in Ge:H films for R = 50 with E_U = 0.040 eV and α_D = 2 × 10³ cm^− 1 (hν ≈ 1.04 eV), and in Ge_YSi_1 − Y:H films for R=75 with E_U = 0.030 eV and α_D = 5 × 10² cm^− 1 (hν ≈ 1.04 eV).     

Optical and electrical properties of vapour phase grown Zn1 − xCrxTe crystals

The optical and electrical properties of vapour phase grown crystals of diluted magnetic semiconductor Zn_1 − xCr_xTe were investigated for 0 ≤ x ≤ 0.005. The diffuse reflectance spectra exhibited an increase in the fundamental absorption edge (E₀) with composition x and were also dominated by a broad absorption band around 5200 cm^− 1 arising from ⁵T₂ → ⁵E transition. The ⁵T₂ and ⁵E levels originate from the crystal field splitting of the ⁵D free ion in the ground state. The electrical resistivity measurements revealed semiconducting behaviour of the samples with p-type conductivity in the temperature range of 200-450 K.     

Composition dependent preferential orientation, dielectric and ferroelectric properties of Pb(ZrxTi1 − x)O3 thin films derived by sol-gel process

Pb(Zr_xTi_1 − x)O₃ (x = 0.35, 0.40, 0.60, 0.65) thin films were prepared by sol-gel spin on technique. From the X-ray diffraction analysis, PZT films with Zr-rich compositions (x = 0.60 and 0.65) had (111) preferential orientation and the preferential orientation changed to (100) for Ti-rich compositions (x = 0.35 and 0.40). The dielectric measurements on the above compositions at room temperature showed that the dielectric constant values were higher in Zr-rich compositions compared to Ti-rich compositions. The ferroelectric behavior measured in terms of the remnant polarization (P_r) and coercive field (E_c) up to an applied field of 260 kV/cm depicted that the Zr-rich PZT films with (111) preferential orientation had higher P_r and lower E_c values compared to the Ti-rich PZT films with (100) preferential orientation can be understood from the domain switching mechanism.     

Study on the optical properties of Zn1−xMgxS (0 ≤ x ≤ 0.55) quantum dots prepared by precipitation method

Zn_1−xMg_xS (0 ≤ x ≤ 0.55) quantum dots (QDs) were successfully synthesized by precipitation method. The crystal structures, microstructures, and optical properties of the Zn_1−xMg_xS QDs were investigated using X-ray diffraction, scanning electron microscopy, and ultraviolet-visible and photoluminescence (PL) spectroscopy. The Zn_1−xMg_xS QDs were found to have a cubic crystal structure and an average crystallite size of 6.40-7.96 nm. It has been shown that an increase in doping Mg²⁺ concentration in Zn_1−xMg_xS QDs led to a gradual widening of the band gap and a weakening in the PL intensity of the Zn_1−xMg_xS QDs.     

Optical and electrical properties of heat-resistant Sb-doped Sn1 − xHfxO2 transparent conducting films

To examine variations in the transparent conducting properties after annealing at high temperatures, 300-nm thick Sb-doped Sn_1 − xHf_xO₂ (x = 0.00-0.10) films were deposited onto silica glass substrates by the RF sputtering method and annealed in air up to 1000 °C at 200 °C increments. After annealing, all the Sb-doped SnO₂ films were transparent and electrically conductive, but large cracks, which decreased the electrical conductivity, were generated in several films due to crystallization or the thermal expansion difference between the film and substrate. Only the film deposited at room temperature in an Ar and O₂ mixed atmosphere did not crack after annealing, and its electrical conductivity exceeded 100 S cm^− 1 even after annealing at 1000 °C in air. Hf-doping blue shifted the fundamental absorption edges in the UV region in the Sb-doped Sn_1 − xHf_xO₂ films. Additionally, the optical transmission at 310 nm, T₃₁₀, increased as the Hf concentration increased, whereas the electrical conductivity was inversely proportional to the Hf concentration. On the other hand, thinner films (150-nm thick) with x = 0.00 showed both a high electrical conductivity over 100 S cm^− 1 and a high transparency T₃₁₀ = 65% after high temperature annealing.     

Low temperature (~ 250 °C) layer exchange crystallization of Si1 − xGex (x = 1-0) on insulator for advanced flexible devices

Low-temperature (~ 250 °C) layer exchange crystallization of poly-Si_1 − xGe_x (x = 1-0) films on insulators has been investigated for realization of advanced flexible devices. We propose utilization of Au as catalyst to enhance the crystallization at low temperatures. By annealing (~ 250 °C, 20 h) of the a-Si_1 − xGe_x (x = 1-0)/Au stacked structures formed on insulating substrates, the SiGe and Au layers exchange their positions, and Au/poly-SiGe stacked structures are obtained. The Ge fractions of the obtained poly-SiGe layers are identical to that of the initial a-SiGe layers, and there is no Si or Ge segregation. This low temperature crystallization technique enables poly-SiGe films on plastic substrates, which are essential to realize advanced flexible devices.