Improvement in image quality of a 5.8‐in. OTFT‐driven flexible AMOLED display

Abstract— The image quality of an OTFT‐driven flexible AMOLED display has been improved by enhancing the performance of OTFTs and OLEDs. To reduce the operating voltage of OTFTs on a plastic film, Ta²O⁵ with a high dielectric constant was used as a gate insulator. The organic semiconductor layer of the OTFT was successfully patterned by a polymer separator, which is an isolating wall structure using an organic material. The OTFT performance, such as its current on/off ratio, carrier mobility, and spatial uniformity on the backplane, was enhanced. A highly efficient phosphorescent OLED was used as a light‐emission device. A very thin molybdenum oxide film was introduced as a carrier‐injection layer on a pixel electrode to reduce the operating voltage of the OLED. After an OTFT‐driven flexible AMOLED display was fabricated, the luminance and uniformity on the display was improved. The fabricated display also showed clear moving images, even when it was bent at a low operating voltage.     

Development of 8‐in. oxide‐TFT‐driven flexible AMOLED display using high‐performance red phosphorescent OLED

An 8‐in. flexible active‐matrix organic light‐emitting diode (AMOLED) display driven by oxide thin‐film transistors (TFTs) has been developed. In‐Ga‐Zn‐O (IGZO)‐TFTs used as driving devices were fabricated directly on a plastic film at a low temperature below 200 °C. To form a SiO_x layer for use as the gate insulator of the TFTs, direct current pulse sputtering was used for the deposition at a low temperature. The fabricated TFT shows a good transfer characteristic and enough carrier mobility to drive OLED displays with Video Graphic Array pixels. A solution‐processable photo‐sensitive polymer was also used as a passivation layer of the TFTs. Furthermore, a high‐performance phosphorescent OLED was developed as a red‐light‐emitting device. Both lower power consumption and longer lifetime were achieved in the OLED, which used an efficient energy transfer from the host material to the guest material in the emission layer. By assembling these technologies, a flexible AMOLED display was fabricated on the plastic film. We obtained a clear and uniform moving color image on the display.     

A 5‐in. flexible ferroelectric liquid‐crystal display driven by organic thin‐film transistors

Abstract— An organic thin‐film‐transistor (OTFT) driven color flexible ferroelectric‐liquid‐crystal (FLC) display with 160 × 120 pixels and a resolution of 50 ppi has been developed. The flexible FLC was fabricated on a pentacene‐OTFT array using printing and lamination techniques. To drive the display at a fast driving speed, an OTFT was developed with a short channel length having a large current output. The fabricated OTFT array with a channel length of 5 μm exhibits a carrier mobility of 0.3 cm²/V‐sec and an ON/OFF ratio of over 10⁷ at a low drain voltage of ?6 V. A field‐sequential‐color system with a flexible backlight unit was also developed and used to drive the display. Color moving images were successively shown on the 5‐in. display using an active‐matrix driving technique of the OTFT.     

A 5.8‐in. phosphorescent color AMOLED display fabricated by ink‐jet printing on plastic substrate

Abstract— A flexible phosphorescent color active‐matrix organic light‐emitting‐diode (AMOLED) display on a plastic substrate has been fabricated. Phosphorescent polymer materials are used for the emitting layer, which is patterned using ink‐jet printing. A mixed solvent system with a high‐viscosity solvent is used for ink formulation to obtain jetting reliability. The effects of evaporation and the baking condition on the film profile and OLED performances were investigated. An organic thin‐film‐transistor (OTFT) backplane, fabricated using pentacene, is used to drive the OLEDs. The OTFT exhibited a current on/off ratio of 10⁶ and a mobility of 0.1 cm²/V‐sec. Color moving images were successfully shown on the fabricated display.     

Fabrication of 5.8‐in. OTFT‐driven flexible color AMOLED display using dual protection scheme for organic semiconductor patterning

Abstract— A 5.8‐in. wide‐QQVGA flexible color active‐matrix organic light‐emitting‐diode (AMOLED) display consisting of organic thin‐film transistors (OTFTs) and phosphorescent OLEDs was fabricated on a plastic film. To reduce the operating voltage of the OTFTs, Ta₂O₅ with a high dielectric constant was employed as a gate insulator. Pentacene was used for the semiconductor layer of the OTFTs. This layer was patterned by photolithography and dry‐etched using a dual protection layer of poly p‐xylylene and SiO₂ film. Uniform transistor performance was achieved in the OTFT backplane with QQVGA pixels. The RGB emission layers of the pixels were formed by vacuum deposition of phosphorescent small molecules. The resulting display could clearly show color moving images even when it was bent and operated at a low driving voltage (below 15 V).     

Fabrication of flexible organic light‐emitting‐diode display with a flexible color filter driven by In—Ga—Zn—Oxide TFTs

Abstract— A novel flexible active‐matrix organic light‐emitting‐diode (OLED) display fabricated on planarized stainless—used‐steel substrates with a resolution of 85 dpi in a 4.7‐in. active area has been demonstrated. Amorphous indium—gallium—zinc—oxide thin‐film transistors were used as the backplane for the OLED display with high device performance, high electrical stability, and long lifetime. A full‐color moving image at a frame frequency of 60 Hz was also realized by using a flexible color filter directly patterned on a plastic substrate with a white OLED as the light source.     

A flexible 2.1‐in. active‐matrix electrophoretic display with high resolution and a thickness of 100 μm

Abstract— A paper‐thin QVGA, flexible 2.1‐in. active‐matrix electrophoretic display (AMEPD) that features 100‐μm thick and a 192‐ppi resolution has been developed. An LTPS‐TFT backplane with integrated peripheral driver circuits was first fabricated on a glass substrate and then transferred to a very thin (30‐μm) plastic film by employing surface‐free technology by laser ablation/annealing (SUFTLA®). A micro‐encapsulated electrophoretic imaging sheet was laminated on the backplane. A supporting substrate was used to support the LTPS‐TFT backplane. Fine images were successfully displayed on the rollable AM‐EPD. The integrated driver circuits dramatically reduce the number of external connection terminals, thus easily boosting the reliability of electrical connections even on such a thin plastic film.     

Flexible electronic‐paper active‐matrix displays

Abstract— A QVGA active‐matrix backplane was produced on a 25‐μm thin plastic substrate. A four‐mask photolithographic process was used. The insulator layer and the semiconductor layer were organic material processed from solution. This backplane was a combination of the electrophoretic display effects supplied by SiPix and E‐Ink Corp., resulting in electronic‐paper displays with a thickness of 150 and 100 μm, respectively; this is the world's thinnest active‐matrix display ever made.     

Flexible electrophoretic display driven by solution‐processed organic thin‐film transistors

Abstract— An organic thin‐film‐transistor (OTFT) backplane has been fabricated by using a solution‐processed organic semiconductor (OSC) and organic insulators. The OSC, a peri‐xanthenoxanthene derivative, provides a mobility of 0.5 cm²/V‐sec. These organic materials enhance the mechanical flexibility of the backplane. The developed backplane successfully drives a 13.3‐in. flexible UXGA electrophoretic display that can operate when bent at a radius of 5 mm.     

Low‐temperature amorphous‐silicon backplane technology development for flexible displays in a manufacturing pilot‐line environment

Abstract— A low‐temperature amorphous‐silicon (a‐Si:H) thin‐film‐transistor (TFT) backplane technology for high‐information‐content flexible displays has been developed. Backplanes were integrated with frontplane technologies to produce high‐performance active‐matrix reflective electrophoretic ink, reflective cholesteric liquid crystal and emissive OLED flexible‐display technology demonstrators (TDs). Backplanes up to 4 in. on the diagonal have been fabricated on a 6‐in. wafer‐scale pilot line. The critical steps in the evolution of backplane technology, from qualification of baseline low‐temperature (180°C) a‐Si:H process on the 6‐in. line with rigid substrates, to transferring the process to flexible plastic and flexible stainless‐steel substrates, to form factor scale‐up of the TFT arrays, and finally manufacturing scale‐up to a Gen 2 (370 × 470 mm) display‐scale pilot line, will be reviewed.     

Active‐matrix organic light‐emitting displays employing two thin‐film‐transistor a‐Si:H pixels on flexible stainless‐steel foil

Abstract— An active‐matrix organic light‐emitting diode (AMOLED) display driven by hydrogenated amorphous‐silicon thin‐film transistors (a‐Si:H TFTs) on flexible, stainless‐steel foil was demonstrated. The 2‐TFT voltage‐programmed pixel circuits were fabricated using a standard a‐Si:H process at maximum temperature of 280°C in a bottom‐gate staggered source‐drain geometry. The 70‐ppi monochrome display consists of (48 × 4) × 48 subpixels of 92 ×369 μm each, with an aperture ratio of 48%. The a‐Si:H TFT pixel circuits drive top‐emitting green electrophosphorescent OLEDs to a peak luminance of 2000 cd/m².     

Flexible color LCD panel driven by low‐voltage‐operation organic TFT

Abstract— A flexible color LCD panel driven by organic TFTs (OTFTs) was successfully demonstrated. A pentacene OTFT with an anodized Ta₂O₅ gate insulator, which can be operated at low voltage, was developed. In order to improve the electrical performance of the OTFT, the gate insulator was surface treated by processes such as O₂ plasma, UV light irradiation, and hexamethyldisilane treatments. The fabricated OTFT exhibited a mobility of 0.3 cm²/V‐sec and a current on/off ratio of 10⁷ with a low operating drain voltage of ?5 V. A fast‐response‐time flexible ferroelectric LCD, which contains polymer networks and walls, was integrated with the OTFTs by using a lamination and a printing technique. As a result, color images were achieved on the fabricated panel by using a field‐sequential‐color method at a low driving voltage of less than 15 V_pp.     

Solution‐processed oxide semiconductors for low‐cost and high‐performance thin‐film transistors and fabrication of organic light‐emitting‐diode displays

Abstract— High‐performance solution‐processed oxide‐semiconductor (OS) thin‐film transistors (TFTs) and their application to a TFT backplane for active‐matrix organic light‐emitting‐diode (AMOLED) displays are reported. For this work, bottom‐gated TFTs having spin‐coated amorphous In‐Zn‐O (IZO) active layers formed at 450°C have been fabricated. A mobility (μ) as high as 5.0 cm²/V‐sec, ?0.5 V of threshold voltage (VT), 0.7 V/dec of subthreshold swing (SS), and 6.9 × 10⁸ of on‐off current ratio were obtained by using an etch‐stopper (ES) structure TFT. TFTs exhibited uniform characteristics within 150 × 150‐mm² substrates. Based on these results, a 2.2‐in. AMOLED display driven by spin‐coated IZO TFTs have also been fabricated. In order to investigate operation instability, a negative‐bias‐temperature‐stress (NBTS) test was carried out at 60°C in ambient air. The IZO‐TFT showed ?2.5 V of threshold‐voltage shift (ΔVT) after 10,800 sec of stress time, comparable with the level (ΔVT = ?1.96 V) of conventional vacuum‐deposited a‐Si TFTs. Also, other issues regarding solution‐processed OS technology, including the instability, lowering process temperature, and printable devices are discussed.     

A quick‐response liquid‐powder display (QR‐LPD®) with plastic substrate

Abstract— Paper‐like displays as thin as 290 μm have been developed using QR‐LPD technology. We fabricated two types of displays. One is a dot‐matrix type with a 160 × 160 array of pixels and a 3.1‐in.‐diagonal viewable image size. The other is a segmented type for clock use. Each display has a paper‐like appearance and exhibits high contrast. Plastic substrates with a thickness of 120 μm were used, resulting in flexible displays that can be bent up to a radius of curvature of 20 mm.     

Flexible hybrid substrates of roll‐to‐roll manufacturing for flexible display application

A flexible hybrid substrate was developed and demonstrated for roll‐to‐roll (R2R) manufacturing. Layer‐by‐layer misalignment can be well controlled within 5 µm. Top‐gate amorphous InGaZnO thin‐film transistor was fabricated on the flexible hybrid substrate by R2R process for the first time. A 4.3‐in. segment‐type reflective Electro‐Phoretic Display (EPD) display was also demonstrated to show the R2R capability of flexible substrates.     

A flexible,organic QVGA display with gray‐scale capability

Abstract— A flexible 4.7‐in. QVGA active‐matrix display was demonstrated, containing 76,800 solution‐processed organic transistors. The combination of our plastic active‐matrix backplane with electrophoretic‐ink display material developed by E‐Ink resulted in a reflective low‐power display with paper‐like appearance. By using high‐performance organic transistors, it was possible to generate 2‐bit images on the display. The display can be bent to a radius below 2 cm.     

Integrated a‐Si TFT row driver circuits for high‐resolution applications

Abstract— A 12.1‐in. tablet liquid‐crystal‐display (LCD) panel with integrated amorphous‐silicon row driver circuits has been developed using a standard TFT process and Advanced Fringe‐Field Switching (AFFS) technology. An XGA‐resolution 768‐stage shift‐register circuit with two‐phase clocks has been designed and fabricated. The circuit parameters were optimized in order to obtain a highly reliable a‐Si row‐driver‐circuit structure. Thermal Humidity Operation (THO) test results at 50°C and 80% humidity during 500 hours of operation shows that the fabricated panel is reliable during long‐term operation and any abnormal display phenomenon was not observed at 0°C.     

A single‐substrate multicolor cholesteric liquid‐crystal display prepared through ink‐jet printing

Abstract— Ink‐jet printing was used to prepare a single‐substrate multicolor cholesteric liquid‐crystal (Ch‐LC) display incorporating three Ch‐LCs exhibiting different reflective wavelengths. A room‐temperature low‐vacuum chemical‐vapor‐deposition process was developed for coating a thin polymer film onto the Ch‐LC so that the top electrode could be coated onto the Ch‐LC layer. Herein, the successful operation of such a 10.4‐in. QVGA Ch‐LC display at 40 V will be described.     

3‐D mobile display based on dual‐directional light guides with a fast‐switching liquid‐crystal panel

Abstract— An autostereoscopic display based on dual‐directional light guides with a fast‐switching liquid‐crystal panel was designed and fabricated to provide better 3‐D perception with image qualities comparable to that of 2‐D displays. With two identical micro‐grooved light guides, each with a light‐controlled ability in one direction, two restricted viewing cones are formed to project pairs of parallax images to the viewer's respective eyes sequentially. Crosstalk of less than 10% located within ±8°–±30° and an LC response time of 7.1 msec for a 1.8‐in. LCD panel can yield acceptable 3‐D perceptions at viewing distance of 5.6–23 cm. Moreover, 2‐D/3‐D compatibility is provided in this module.     

Wearable 4‐in. QVGA full‐color‐video flexible AMOLEDs for rugged applications

Abstract— Work on the world's first wrist‐worn communications device built on a flexible, low‐power‐consumption full‐color AMOLED using phosphorescent OLEDs is presented. The device offers the wearer the ability to see high‐information‐content video‐rate information in a thin‐and‐rugged‐form‐factor 4‐in. QVGA display, conformed around a human wrist.