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1.
    
A novel semiconductor based on annelated β‐trithiophenes is presented, possessing an extraordinary compressed packing mode combining edge‐to‐face π–π interactions and S…S interactions in single crystals, which is favorable for more effective charge transporting. Accordingly, the device incorporating this semiconductor shows remarkably high charge carrier mobility, as high as 0.89 cm2 V?1 s?1, and an on/off ratio of 4.6 × 107 for vacuum‐deposited thin films.  相似文献   

2.
    
Photonic artificial synapses-based neuromorphic computing systems have been regarded as promising candidates for replacing von Neumann-based computing systems due to the high bandwidth, ultrafast signal transmission, low energy consumption, and wireless communication. Although significant progress has been made in developing varied device structures for synaptic emulation, organic field-effect transistors (OFETs) hold the compelling advantages of facile preparation, liable integration, and versatile structures. As a powerful and effective platform for photonic synapses, OFETs can fulfill not only the simulation of simple synaptic functions, but also complex photoelectric dual modulation and simulation of the visual system. Herein, an overview of OFET-based photonic synapses, including functional materials, device configurations, and innovative applications is provided. Meanwhile, rules for selecting materials, mechanism of photoelectric conversion, and fabrication techniques of devices are also highlighted. Finally, challenges and opportunities are all discussed, providing solid guidance for multilevel memory, multi-functional tandem artificial neural system, and artificial intelligence.  相似文献   

3.
    
Organic photovoltaic power conversion efficiencies exceeding 14% can largely be attributed to the development of nonfullerene acceptors (NFAs). Many of these molecules are structural derivatives of IDTBR and ITIC, two common NFAs. By modifying the chemical structure of the acceptor, the optical absorption, energy levels, and bulk heterojunction morphology can be tuned. However, the effect of structural modifications on NFA charge transport properties has not yet been fully explored. In this work, the relationship between chemical structure, molecular packing, and charge transport, as measured in organic thin‐film transistors (OTFTs), is investigated for two high performance NFAs, namely O‐IDTBR and ITIC, along with their structural derivatives EH‐IDTBR and ITIC‐Th. O‐IDTBR exhibits a higher n‐type saturation field effect mobility of 0.12 cm2 V−1 s−1 compared with the other acceptors investigated. This can be attributed to the linear side chains of O‐IDTBR which direct an interdigitated columnar packing motif. The study provides insight into the transport properties and molecular packing of NFAs, thereby contributing to understanding the relationship between chemical structure, material properties, and device performance for these materials. The high electron mobility achieved by O‐IDTBR also suggests its applications can be extended to use as an n‐type semiconductor in OTFTs.  相似文献   

4.
    
The film thickness of one of the most crystalline and highest performing polymer semiconductors, poly(2,5‐bis(3‐tetradecylthiophen‐2‐yl)thieno[3,2‐b]thiophene) (PBTTT), is varied in order to determine the effects of interfaces and confinement on the microstructure and performance in organic field effect transistors (OFETs). Crystalline texture and overall film crystallinity are found to depend strongly on film thickness and thermal processing. The angular distribution of crystallites narrows upon both a decrease in film thickness and thermal annealing. These changes in the film microstructure are paired with thin‐film transistor characterization and shown to be directly correlated with variations in charge carrier mobility. Charge transport is shown to be governed by film crystallinity in films below 20 nm and by crystalline orientation for thicker films. An optimal thickness is found for PBTTT at which the mobility is maximized in unannealed films and where mobility reaches a plateau at its highest value for annealed films.  相似文献   

5.
    
Charge transport is investigated in high‐mobility n‐channel organic field‐effect transistors (OFETs) based on poly{[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)} (P(NDI2OD‐T2), Polyera ActivInk? N2200) with variable‐temperature electrical measurements and charge‐modulation spectroscopy. Results indicate an unusually uniform energetic landscape of sites for charge‐carrier transport along the channel of the transistor as the main reason for the observed high‐electron mobility. Consistent with a lateral field‐independent transport at temperatures down to 10 K, the reorganization energy is proposed to play an important role in determining the activation energy for the mobility. Quantum chemical calculations, which show an efficient electronic coupling between adjacent units and a reorganization energy of a few hundred meV, are consistent with these findings.  相似文献   

6.
    
Solution‐processable functionalized acenes have received special attention as promising organic semiconductors in recent years because of their superior intermolecular interactions and solution‐processability, and provide useful benchmarks for organic field‐effect transistors (OFETs). Charge‐carrier transport in organic semiconductor thin films is governed by their morphologies and molecular orientation, so self‐assembly of these functionalized acenes during solution processing is an important challenge. This article discusses the charge‐carrier transport characteristics of solution‐processed functionalized acene transistors and, in particular, focuses on the fine control of the films' morphologies and structural evolution during film‐deposition processes such as inkjet printing and post‐deposition annealing. We discuss strategies for controlling morphologies and crystalline microstructure of soluble acenes with a view to fabricating high‐performance OFETs.  相似文献   

7.
    
The mechano‐electrical properties of poly(3‐hexylthiophene) thin films are investigated as a function of their tie‐chain content. Tie chains play an indispensable role in enabling strain‐induced structural alignment and charge‐transport enhancement in the strain direction. In the absence of sufficient tie chains, the external mechanical force cannot induce any significant polymer backbone alignment locally or crystallite reorientation at the mesoscale. These samples instead undergo brittle fracture on deformation, with cracks forming normal to the direction of strain; charge transport in this direction is hindered as a consequence. This mechanistic insight on strain alignment points to the promise of leveraging tie‐chain fraction as a practical tuning knob for effecting the mechano‐electrical properties in conjugated polymer systems.  相似文献   

8.
    
Force‐field and quantum‐chemical calculations are combined to model the packing of pentacene molecules at the atomic level on two polymer dielectric layers (poly(methyl methacrylate) (PMMA) versus polystyrene (PS)) widely used in field‐effect transistors and to assess the impact of electrostatic interactions at the interface on the charge mobility values in the pentacene layers. The results show unambiguously that the electrostatic interactions introduce a significant energetic disorder in the pentacene layer in contact with the polymer chains; a drop in the hole mobility by a factor of 5 is predicted with PS chains while a factor of 60 is obtained for PMMA due to the presence of polar carbonyl groups.  相似文献   

9.
    
Here, a novel fabrication technique for integrated organic devices on substrates with complex structure is presented. For this work, free‐standing polymeric masks with stencil‐patterns are fabricated using an ultra‐violet (UV) curable polyurethaneacrylate (PUA) mixture, and used as shadow masks for thermal evaporation. High flexibility and adhesive properties of the free‐standing PUA masks ensure conformal contact with various materials such as glass, silicon (Si), and polymer, and thus can also be utilized as patterning masks for solution‐based deposition methods, such as spin‐coating and drop‐casting. Based on this technique, a number of integrated organic transistors are fabricated simultaneously on a cylindrical glass bottle with high curvature, as well as on a flat silicon wafer. It is anticipated that these results will be applied to the development of various integrated organic devices on complex‐structured substrates, which can lead to further applications.  相似文献   

10.
    
Organic thin‐film transistors (TFTs) are prepared by vacuum deposition and solution shearing of 2,9‐bis(perfluoroalkyl)‐substituted tetraazaperopyrenes (TAPPs) with bromine substituents at the aromatic core. The TAPP derivatives are synthesized by reacting known unsubstituted TAPPs with bromine in fuming sulphuric acid, and their electrochemical properties are studied in detail by cyclic voltammetry and modelled with density functional theory (DFT) methods. Lowest unoccupied molecular orbital (LUMO) energies and electron affinities indicate that the core‐brominated TAPPs should exhibit n‐channel semiconducting properties. Current‐voltage characteristics of the TFTs established electron mobilities of up to μn = 0.032 cm2 V?1 s?1 for a derivative which was subsequently processed in the fabrication of a complementary ring oscillator on a flexible plastic substrate (PEN).  相似文献   

11.
    
Naphthalenediimide (NDI)‐based polymers co‐polymerized with thienyl units are an interesting class of polymer semiconductors because of their good electron mobilities and unique film microstructure. Despite these properties, understanding how the extension of the thienyl co‐monomer affects charge transport properties remains unclear. With this goal in mind, we have synthesized a series of NDI derivatives of the parent poly{[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene) (P(NDI2OD‐T2)), which exhibited excellent electron mobility. The strategy comprises both the extension of the donor o‐conjugation length and the heteroatomic fusion of the thiophene rings. These newly synthesized compounds are characterized experimentally and theoretically vis‐à‐vis with P(NDI2OD‐T2) as the reference. UV‐vis data and cyclic‐voltammetry are adopted to assess the effect of the donor modification on the frontier energy levels and on the bandgap. Intra‐molecular polaronic effects are accounted for by computing the internal reorganization energy with density functional theory (DFT) calculations. Finally electrons and holes transport is experimentally investigated in field‐effect transistors (FETs), by measuring current‐voltage characteristics at variable temperatures. Overall we have identified a regime where inter‐molecular effects, such as the wavefunction overlap and the degree of energetic disorder, induced by the different donor group prevail over polaronic effects and are the leading factors in determining electrons mobility.  相似文献   

12.
    
A synergistic approach combining new material design and interfacial engineering of devices is adopted to produce high efficiency inverted solar cells. Two new polymers, based on an indacenodithieno[3,2‐b]thiophene‐difluorobenzothiadiazole (PIDTT‐DFBT) donor–acceptor (D–A) polymer, are produced by incorporating either an alkyl thiophene (PIDTT‐DFBT‐T) or alkyl thieno[3,2‐b]thiophene (PIDTT‐DFBT‐TT) π‐bridge as spacer. Although the PIDTT‐DFBT‐TT polymer exhibits decreased absorption at longer wavelengths and increased absorption at higher energy wavelengths, it shows higher power conversion efficiencies in devices. In contrast, the thiophene bridged PIDTT‐DFBT‐T shows a similar change in its absorption spectrum, but its low molecular weight leads to reduced hole mobilities and performance in photovoltaic cells. Inverted solar cells based on PIDTT‐DFBT‐TT are explored by modifying the electron‐transporting ZnO layer with a fullerene self‐assembled monolayer and the MoO3 hole‐transporting layer with graphene oxide. This leads to power conversion efficiencies as high as 7.3% in inverted cells. PIDTT‐DFBT‐TT's characteristic strong short wavelength absorption and high efficiency suggests it is a good candidate as a wide band gap material for tandem solar cells.  相似文献   

13.
    
Organic neuromorphic devices mimic signal processing features of biological synapses, with short-term plasticity, STP, modulated by the frequency of the input voltage pulses. Here, an artificial synapse, made of intracortical microelectrodes, is demonstrated that exhibits either depressive or facilitative STP. The crossover between the two STP regimes is controlled by the frequency of the input voltage. STP features are described with an equivalent circuit where an inductance component is introduced in parallel with the RC circuit associated with poly(3,4-ethylenedioxythiophene)/polystyrene sulfonate (PEDOT/PSS)||electrolyte interface. The proposed RLC circuit explains the physical origin of the observed STP and its two timescales in terms of charge build up in PEDOT/PSS.  相似文献   

14.
    
In the past few decades, mainly two kind of organic semiconductors, namely small molecules and polymers, have been dealt with. It turns out that the difference between these two categories in terms of charge carrier transport arises from the potentially different morphologies and the molecular packing. There are many studies showing the effect of the chemical structure on the electronic properties. However, in this study, the focus is on the role of processing conditions which is found to be of at least equal importance. To study a range of morphologies and packing in as similar molecules, two systems prepared by “Click”‐type chemistry are chosen, with the major difference between them being the replacement of a flat unit with one that introduces a slight twist to the aromatic skeleton. Through AFM and X‐ray studies, it is shown that the molecule with the potentially flat geometry can exhibit a high degree of π–π stacking, leading to morphologies ranging from polycrystalline to single crystals while the other is always in the amorphous film state. The transport properties are compared using organic field effect transistor (OFETs) in both top and bottom contact configurations.  相似文献   

15.
High‐performance, air‐stable, p‐channel WSe2 top‐gate field‐effect transistors (FETs) using a bilayer gate dielectric composed of high‐ and low‐k dielectrics are reported. Using only a high‐k Al2O3 as the top‐gate dielectric generally degrades the electrical properties of p‐channel WSe2, therefore, a thin fluoropolymer (Cytop) as a buffer layer to protect the 2D channel from high‐k oxide forming is deposited. As a result, a top‐gate‐patterned 2D WSe2 FET is realized. The top‐gate p‐channel WSe2 FET demonstrates a high hole mobility of 100 cm2­ V?1 s?1 and a ION/IOFF ratio > 107 at low gate voltages (VGS ca. ?4 V) and a drain voltage (VDS) of ?1 V on a glass substrate. Furthermore, the top‐gate FET shows a very good stability in ambient air with a relative humidity of 45% for 7 days after device fabrication. Our approach of creating a high‐k oxide/low‐k organic bilayer dielectric is advantageous over single‐layer high‐k dielectrics for top‐gate p‐channel WSe2 FETs, which will lead the way toward future electronic nanodevices and their integration.  相似文献   

16.
    
Organic field‐effect transistors (OFETs) have received considerably more attention than inorganic‐based field‐effect transistors for use in next generation of organic circuits. There are a number of variables, for example, the ordering of the OFETs, their energy levels, and the material used for source/drain electrodes, that influence the magnitude of charge transport mobility. Importantly, a suitable energy level match between highest occupied molecular orbital (HOMO) or lowest unoccupied molecular orbital (LUMO) energy level and work function of the electrodes may have a large influence on the measured mobility. An informatics approach, specifically use of machine learning, is proposed for charge transport mobility prediction. Gradient Boosting and Random Forest regression algorithms are used to model previous experimental datasets and HOMO and LUMO energy levels of n‐type materials are optimized using expected machine‐learning methods. The results reveal that Random Forest model benefits the functional analysis of n‐type OFETs in three ways: 1) it provides better understanding of current n‐type organic materials, 2) it may guide the choice of n‐type organic materials and conducting electrodes, and 3) it measures the tradeoffs between the charge transport mobility and electronic energy levels for n‐type OFETs.  相似文献   

17.
    
Biocompatible‐ingestible electronic circuits and capsules for medical diagnosis and monitoring are currently based on traditional silicon technology. Organic electronics has huge potential for developing biodegradable, biocompatible, bioresorbable, or even metabolizable products. An ideal pathway for such electronic devices involves fabrication with materials from nature, or materials found in common commodity products. Transistors with an operational voltage as low as 4–5 V, a source drain current of up to 0.5 μA and an on‐off ratio of 3–5 orders of magnitude have been fabricated with such materials. This work comprises steps towards environmentally safe devices in low‐cost, large volume, disposable or throwaway electronic applications, such as in food packaging, plastic bags, and disposable dishware. In addition, there is significant potential to use such electronic items in biomedical implants.  相似文献   

18.
    
Nanoscale hybrid dielectrics composed of an ultra‐thin polymeric low‐κ bottom layer and an ultra‐thin high‐κ oxide top layer, with high dielectric strength and capacitances up to 0.25 μFcm?2, compatible with low‐voltage, low‐power, organic electronic circuits are demonstrated. An efficient and reliable fabrication process, with 100% yield achieved on lab‐scale arrays, is demonstrated by means of pulsed laser deposition (PLD) for the fast growth of the oxide layer. With this strategy, high capacitance top gate (TG), n‐type and p‐type organic field effect transistors (OFETs) with high mobility, low leakage currents, and low subthreshold slopes are realized and employed in complementary‐like inverters, exhibiting ideal switching for supply voltages as low as 2 V. Importantly, the hybrid double‐layer allows for a neat decoupling between the need for a high capacitance, guaranteed by the nanoscale thickness of the double layer, and for an optimized semiconductor–dielectric interface, a crucial point in enabling high mobility OFETs, thanks to the low‐κ polymeric dielectric layer in direct contact with the polymer semiconductor. It is shown that such decoupling can be achieved already with a polymer dielectric as thin as 10 nm when the top oxide is deposited by PLD. This paves the way for a very versatile implementation of the proposed approach for the scaling of the operating voltages of TG OFETs with very low level of dielectric leakage currents to the fabrication of low‐voltage organic electronics with drastically reduced power consumption.  相似文献   

19.
    
Biocompatible‐ingestible electronic circuits and capsules for medical diagnosis and monitoring are currently based on traditional silicon technology. Organic electronics has huge potential for developing biodegradable, biocompatible, bioresorbable, or even metabolizable products. An ideal pathway for such electronic devices involves fabrication with materials from nature, or materials found in common commodity products. Transistors with an operational voltage as low as 4–5 V, a source drain current of up to 0.5 μA and an on‐off ratio of 3–5 orders of magnitude have been fabricated with such materials. This work comprises steps towards environmentally safe devices in low‐cost, large volume, disposable or throwaway electronic applications, such as in food packaging, plastic bags, and disposable dishware. In addition, there is significant potential to use such electronic items in biomedical implants.  相似文献   

20.
    
Grain boundaries act as bottlenecks to charge transport in devices comprising polycrystalline organic active layers. To improve device performance, the nature and resulting impact of these boundaries must be better understood. The densities and energy levels of shallow traps within and across triethylsilylethynyl anthradithiophene (TES ADT) spherulites are quantified. The trap density is 7 × 1010 cm?2 in devices whose channels reside within a single spherulite and up to 3 × 1011 cm?2 for devices whose channels span a spherulite boundary. The activation energy for charge transport, EA, increases from 34 meV within a spherulite to 50–66 meV across a boundary, depending on the angle of molecular mismatch. Despite being molecular in nature, these EA’s are more akin to those found for charge transport in polymer semiconductors. Presumably, trapped TES ADT at the boundary can electrically connect neighboring spherulites, similar to polymer chains connecting crystallites in polymer semiconductor thin films.  相似文献   

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