Composite silver electrode for double‐sided‐emitting stacked organic light‐emitting diode

Abstract— A reflective composite silver electrode is proposed and characterized as the middle electrode of a stacked organic light‐emitting diode (OLED) with double‐sided light emission. The proposed electrode is composed of a thermally evaporated stack of LiF (1 nm)/Al (3 nm)/Ag (70 nm) layers. The LiF/Al and the plasma‐treated Ag of the electrode function well as the respective cathode and anode of the bottom‐ and top‐emitting stacked OLEDs, with both being of the non‐inverted type. Power efficiencies of 10.3 and 12.1 lm/W at 100 cd/m² have been measured for bottom‐ and top‐emitting OLEDs, respectively, using dye doping. The stacked OLED having this bipolar middle electrode can be constructed as a two‐terminal‐only device, allowing for simpler driving schemes in double‐side‐emitting passive‐/active‐matrix OLED displays.     

A 5.8‐in. phosphorescent color AMOLED display fabricated by ink‐jet printing on plastic substrate

Abstract— A flexible phosphorescent color active‐matrix organic light‐emitting‐diode (AMOLED) display on a plastic substrate has been fabricated. Phosphorescent polymer materials are used for the emitting layer, which is patterned using ink‐jet printing. A mixed solvent system with a high‐viscosity solvent is used for ink formulation to obtain jetting reliability. The effects of evaporation and the baking condition on the film profile and OLED performances were investigated. An organic thin‐film‐transistor (OTFT) backplane, fabricated using pentacene, is used to drive the OLEDs. The OTFT exhibited a current on/off ratio of 10⁶ and a mobility of 0.1 cm²/V‐sec. Color moving images were successfully shown on the fabricated display.     

Circuits using uniform TFTs based on amorphous In‐Ga‐Zn‐O

Abstract— High‐performance and excellent‐uniformity thin‐film transistors (TFTs) having bottom‐gate structures are fabricated using an amorphous indium‐gallium‐zinc‐oxide (IGZO) film and an amorphous‐silicon dioxide film as the channel layer and the gate insulator layer, respectively. All of the 94 TFTs fabricated with an area 1 cm² show almost identical transfer characteristics: the average saturation mobility is 14.6 cm²/(V‐sec) with a small standard deviation of 0.11 cm²/(V‐sec). A five‐stage ring‐oscillator composed of these TFTs operates at 410 kHz at an input voltage of 18 V. Pixel‐driving circuits based on these TFTs are also fabricated with organic light‐emitting diodes (OLED) which are monolithically integrated on the same substrate. It is demonstrated that light emission from the OLED cells can be switched and modulated by a 120‐Hz ac signal input. Amorphous‐IGZO‐based TFTs are prominent candidates for building blocks of large‐area OLED‐display electronics.     

Efficient white organic light‐emitting diodes based on a balanced split of the exciton‐recombination zone using a graded mixed layer as an electron‐blocking layer

Abstract— Efficient white organic light‐emitting diodes with both a graded mixed layer as the blue‐emitting layer and an electron‐blocking layer, and a DPVBi:Rubrene layer as a yellow‐emitting layer have been demonstrated. The mixing of the two colors occurs due to a balanced split of the exciton‐recombination zone by the graded mixed layer serving as the electron‐blocking layer. The white organic light‐emitting diode with an ITO/2‐TNATA 30 nm/NPB 30 nm/DPVBi:Rubrene (1.0 wt.%) 5 nm/NPB:DPVBi (9:1) 150 nm/NPB:DPVBi (5:5) 75 nm/NPB:DPVBi (3:7) 75 nm/NPB:DPVBi (2:8) 75 nm/NPB:DPVBi (0.5:9.5) 75 nm/BCP 5 nm/Alq³ 30 nm/LiF 0.5 nm/Al 100 nm structure is chosen as a device with an optimal configuration among devices investigated in this study. The employment of the graded mixed layer in the device is effective in suppressing the color shift at different voltages. The white light, with a Commission Internationale d'Eclairage chromaticity coordinates of (0.33, 0.34), is obtained with an applied voltage of 10.5 V for the device. At the applied voltage, the luminance is 4882 cd/m² and the current efficiency is 5.03 cd/A.     

Static active‐matrix OLED display without pixel refresh enabled by amorphous‐silicon non‐volatile memory

Abstract— An active‐matrix organic light‐emitting‐diode (AMOLED) display which does not require pixel refresh is demonstrated. This was achieved by replacing the thin‐film transistor (TFT) that drives the OLED with a non‐volatile memory TFT, in a 2‐transistor pixel circuit. The threshold voltage of the non‐volatile‐memory TFT can be changed by applying programming voltage pulses to the gate electrode. This approach eliminates the need for storage capacitors, increases the pixel fill factor, and potentially reduces power consumption. Each pixel can be individually programmed or erased using a standard active‐matrix addressing scheme. The programmed image is stored in the display even if power is turned off.     

Pixel structures using the negative feedback method for high‐resolution active matrix organic light‐emitting diode displays

Novel two pixel structures are proposed for high‐resolution active matrix organic light‐emitting diode displays. The proposed two pixels (pixel structures A and B) use the negative feedback method for high‐resolution displays that requires to have small‐sized storage capacitance. The proposed pixel structures A and B improve the luminance uniformity by reducing the voltage distortion in the storage capacitor. However, the proposed pixel structure A is vulnerable to the organic light‐emitting diode (OLED) degradation because the anode voltage of the OLED affects the emission current. In order to compensate the OLED degradation, the proposed pixel structure B stores the turn‐on voltage of OLEDs in the storage capacitor. The simulation results show that the emission current error of the proposed pixel structure B is improved by four times in comparison with the proposed pixel structure A when the OLED turn‐on voltage increases by 0.1 V. Also, the emission current error of the proposed pixel structure B when the threshold voltage of driving thin‐film transistors varies from ?2.2 to ?1.8 V is from ?0.69 least significant bit (LSB) to 0.13 LSB, which shows the excellent luminance uniformity. The proposed pixels are designed for 5.5‐in. full high‐definition displays.     

Displacement‐current analysis of organic light‐emitting diodes

Abstract— Organic light‐emitting diodes (OLEDs) having multiple organic layers were fabricated to analyze the physical phenomena occurring in an OLED according to the amplitude of the applied voltage. The staircase voltage with both an increasing period and a constant period was designed and applied to an OLED. The displacement current began to change at a voltage where the conduction current began to change, and partly originated from the formation of space charge due to the low mobility of the majority carrier. The displacement current was shown to be constant at low voltage and decreased after showing a maximum value as the applied voltage increased. The exact voltage for the injection of two types of carriers and light emission could be obtained from the variation in the displacement current.     

A 13.5‐in. Quad‐FHD flexible CAAC‐OS AMOLED display with long‐life OLED device structure

In this study, the device structure of a white tandem organic light‐emitting diode (OLED) was changed to control the emission area and thereby achieve less luminance decay. A long‐life 13.5‐inch 4 K flexible c‐axis‐aligned crystal oxide semiconductor (CAAC‐OS) active‐matrix OLED with less color shift and high resolution was fabricated using this long‐life white OLED, transfer technology, and a CAAC‐OS field‐effect transistor.     

Vertically integrated,double stack oxide TFT layers for high‐resolution AMOLED backplane

We developed a novel vertically integrated, double stack oxide thin‐film transistor (TFT) backplane for high‐resolution organic light‐emitting diode (OLED) displays. The first TFT layer is bulk‐accumulation mode, and the second TFT layer is a single gate with back‐channel etched structure. The extracted mobilities and threshold voltages are higher than 10 cm²/Vs and 0 ~ 1 V, respectively. Both TFTs are found to be extremely stable under the bias and temperature stress. The gate driver with width of 530 μm and a pitch of 18.6 μm was developed, exhibiting well shifted signal up to the last stage of 900 stages without output degradation, which could be used for 1360 ppi TFT backplane.     

Letter: A new compensation pixel circuit with metal oxide thin‐film transistors for active‐matrix organic light‐emitting diode displays

This paper presents a novel compensation pixel circuit for active‐matrix organic light‐emitting diode displays, in which the coupling effect mask technology is developed to compensate the threshold voltage of driving thin‐film transistor whether it is positive or negative. Twenty discrete compensation pixel circuits have been fabricated by In‐Zn‐O thin‐film transistors process. It is measured that the non‐uniformity of the proposed pixel circuit is significantly reduced with an average value of 8.6%. Furthermore, the organic light‐emitting diode emission current remains constant during 6 h continuous operation, which also confirms the validity of the proposed pixel circuit.     

Reducing image sticking in AMOLED displays with time‐ratio gray scale by analog calibration

Abstract— Early loss of image uniformity has been a critical drawback of active‐matrix organic light‐emitting‐diode (AMOLED) displays operated in time‐ratio gray‐scale mode. This problem is addressed with an analog calibration technique which measures the voltage across each OLED for a given current and subsequently controls the supply voltage of pixels and the voltage drop across the driving th in‐film transistor (TFT) of each OLED. The uniformity of test cells, which were aged to produce image sticking in a chessboard pattern, were improved. A measure of image sticking, called the extracted image‐sticking value (EISV), was formulated, which is developed and used for the quantitative evaluation of the calibration method. OLED voltages over a range of about 0.35 V were compensated to produce more uniform OLED currents than those before aging. The variation of luminance associated with image sticking was reduced by about 40% for a full‐white image after between 2 and 10 hours of accelerated aging with a constant voltage of 8 V across an OLED.     

High‐mobility self‐aligned top‐gate oxide TFT for high‐resolution AM‐OLED

High‐mobility and highly reliable self‐aligned top‐gate oxide thin‐film transistor (TFTs) were developed using the aluminum reaction method. Al diffusion to the oxide semiconductor and homogenization of the oxygen concentration in the depth direction after annealing were confirmed by laser‐assisted atom probe tomography. The high mobility of the top‐gate TFT with amorphous indium tin zinc oxide channel was demonstrated to be 32 cm²/V s. A 9.9‐in. diagonal qHD active‐matrix organic light‐emitting diode (AM‐OLED) display was fabricated using a five‐mask backplane process to demonstrate an applicable solution for large‐sized and high‐resolution AM‐OLEDs.     

Solution‐processed oxide semiconductors for low‐cost and high‐performance thin‐film transistors and fabrication of organic light‐emitting‐diode displays

Abstract— High‐performance solution‐processed oxide‐semiconductor (OS) thin‐film transistors (TFTs) and their application to a TFT backplane for active‐matrix organic light‐emitting‐diode (AMOLED) displays are reported. For this work, bottom‐gated TFTs having spin‐coated amorphous In‐Zn‐O (IZO) active layers formed at 450°C have been fabricated. A mobility (μ) as high as 5.0 cm²/V‐sec, ?0.5 V of threshold voltage (VT), 0.7 V/dec of subthreshold swing (SS), and 6.9 × 10⁸ of on‐off current ratio were obtained by using an etch‐stopper (ES) structure TFT. TFTs exhibited uniform characteristics within 150 × 150‐mm² substrates. Based on these results, a 2.2‐in. AMOLED display driven by spin‐coated IZO TFTs have also been fabricated. In order to investigate operation instability, a negative‐bias‐temperature‐stress (NBTS) test was carried out at 60°C in ambient air. The IZO‐TFT showed ?2.5 V of threshold‐voltage shift (ΔVT) after 10,800 sec of stress time, comparable with the level (ΔVT = ?1.96 V) of conventional vacuum‐deposited a‐Si TFTs. Also, other issues regarding solution‐processed OS technology, including the instability, lowering process temperature, and printable devices are discussed.     

Ink‐jet‐printable phosphorescent organic light‐emitting‐diode devices

Abstract— A novel method for the fabrication of ink‐jet‐printed organic light‐emitting‐diode devices is discussed. Unlike previously reported solution‐processed OLED devices, the emissive layer of OLED devices reported here does not contain polymeric materials. The emission of the ink‐jet‐printed P²OLED (IJ‐P²OLED) device is demonstrated for the first time. It shows good color and uniform emission although it uses small‐molecule solution. Ink‐jet‐printed green P²OLED devices possess a high luminous efficiency of 22 cd/A at 2000 cd/m² and is based on phosphorescent emission. The latest solution‐processed phosphorescent OLED performance by spin‐coating is disclosed. The red P²OLED exhibits a projected LT50 of >53,000 hours with a luminous efficiency of 9 cd/A at 500 cd/m². The green P²OLED shows a projected LT50 of >52,000 hours with a luminous efficiency of 35 cd/A at 1000 cd/m². Also discussed is a newly developed sky‐blue P²OLED with a projected LT50 of >3000 hour and a luminous efficiency of 18 cd/A at 500 cd/m².     

An averaging pixel structure using microcrystalline‐silicon films prepared at high temperature for AMOLED displays

Abstract— A new voltage‐addressed pixel using a multiple drive distribution has been developed to improve, in a simple way, the brightness uniformity of active‐matrix organic light‐emitting‐diode (AMOLED) displays. Moreover, circuits were realized using microcrystalline‐silicon (μc‐Si) films prepared at 600°C using a standard low‐pressure CVD system. The developed p‐channel TFTs exhibit a field‐effect mobility close to 6 cm²/V‐sec. The experimental results show that the proposed spatial distribution of driving TFTs improves the uniformity of current levels, in contrast to the conventional two‐TFT pixel structure. Backplane performances have been compared using circuits based on μc‐Si and furnace‐annealed polysilicon materials. Finally, this technology has been used to make an AMOLED demonstration unit using a top‐emission OLED structure. Thus, by combining both an μc‐Si active‐layer and a current‐averaging driver, an unsophisticated solution is provided to solve the inter‐pixel non‐uniformity issue.     

A 5‐in. flexible ferroelectric liquid‐crystal display driven by organic thin‐film transistors

Abstract— An organic thin‐film‐transistor (OTFT) driven color flexible ferroelectric‐liquid‐crystal (FLC) display with 160 × 120 pixels and a resolution of 50 ppi has been developed. The flexible FLC was fabricated on a pentacene‐OTFT array using printing and lamination techniques. To drive the display at a fast driving speed, an OTFT was developed with a short channel length having a large current output. The fabricated OTFT array with a channel length of 5 μm exhibits a carrier mobility of 0.3 cm²/V‐sec and an ON/OFF ratio of over 10⁷ at a low drain voltage of ?6 V. A field‐sequential‐color system with a flexible backlight unit was also developed and used to drive the display. Color moving images were successively shown on the 5‐in. display using an active‐matrix driving technique of the OTFT.     

Suspension‐deposited carbon‐nanotube networks for flexible active‐matrix displays

Abstract— The unique properties of carbon nanotubes (CNTs) promise innovative solutions for a variety of display applications. The CNTs can be deposited from suspension. These simple and low‐cost techniques will replace time‐consuming and costly vacuum processes and can be applied to large‐area glass and flexible substrates. Single‐walled carbon nanotubes (SWNTs) have been used as conducting and transparent layers, replacing the brittle ITO, and as the semiconducting layer in thin‐film transistors (TFTs). There is no need for alignment because a CNT network is used instead of single CNTs. Both processes can be applied to glass and to flexible plastic substrates. The transparent and conductive nanotube layers can be produced with a sheet resistance of 400 Ω/□ at 80% transmittance. Such layers have been used to produce directly addressed liquid‐crystal displays and organic light‐emitting diodes (OLED). The CNT‐TFTs reach on/off ratios of more than 10⁵ and effective charge‐carrier mobilities of 1 cm²/V‐sec and above.     

Vt Compensated voltage‐data a‐Si TFT AMOLED pixel circuits

Abstract— Active‐matrix organic light‐emitting‐diode (AMOLED) displays are now entering the marketplace. The use of a thin‐film‐transistor (TFT) active matrix allows OLED displays to be larger in size, higher in resolutions and lower in power dissipation than is possible using a conventional passive matrix. A number of TFT active‐matrix pixel circuits have been developed for luminance control, while correcting for initial and electrically stressed TFT parameter variations. Previous circuits and driving methods are reviewed. A new driving method is presented in which the threshold‐voltage (V_t) compensation performance, along with various circuit improvements for amorphous‐silicon (a‐Si) TFT pixel circuits using voltage data, are discussed. This new driving method along with various circuit improvements is demonstrated in a state‐of‐the‐art 20‐in. a‐Si TFT AMOLED HDTV.     

Development of a color‐tunable polychromatic organic‐light‐emitting‐diode device for roll‐to‐roll manufacturing

A flexible vertically stacked flexible polychromatic color‐tunable OLED has been developed by means of low resistive intermediate electrode technology. The polychromatic OLED has a capability to show 16 million colors with 105% National Television Committee Standard (NTSC) color reproduction. The device can produce arbitrary shape with arbitrary colors, suitable for artistic expressions, just as many as those used in information displays. Independently controlled red, green, and blue light‐emitting layers are stacked vertically. With conventional indium tin oxide technology, because of the temperature restriction, it was quite difficult to achieve low resistance on plastic substrate. The reported numbers were all more than 80 Ω/□. According to the surface mobility control using Fick's law analysis, low sheet resistance 7.34 Ω/□ on plastic film was developed. At first, flexible 7.17 cm² transparent OLED was fabricated for the performance confirmation of transparent electrode. And then polychromatic color‐tunable OLED with the same size were successfully fabricated on plastic. With optical length optimization for each color stack of polychromatic OLED, more than 100% color reproduction in National Television Committee Standard was achieved by stack design. The polychromatic device can be used for colored illumination, as well as for organic‐light‐emitting display pixels for three times emission than conventional pixel design. The device is fabricated on plastic substrate so that the polychromatic organic‐light‐emitting‐diode device is manufacturable with roll‐to‐roll production line.     

Improvement in image quality of a 5.8‐in. OTFT‐driven flexible AMOLED display

Abstract— The image quality of an OTFT‐driven flexible AMOLED display has been improved by enhancing the performance of OTFTs and OLEDs. To reduce the operating voltage of OTFTs on a plastic film, Ta²O⁵ with a high dielectric constant was used as a gate insulator. The organic semiconductor layer of the OTFT was successfully patterned by a polymer separator, which is an isolating wall structure using an organic material. The OTFT performance, such as its current on/off ratio, carrier mobility, and spatial uniformity on the backplane, was enhanced. A highly efficient phosphorescent OLED was used as a light‐emission device. A very thin molybdenum oxide film was introduced as a carrier‐injection layer on a pixel electrode to reduce the operating voltage of the OLED. After an OTFT‐driven flexible AMOLED display was fabricated, the luminance and uniformity on the display was improved. The fabricated display also showed clear moving images, even when it was bent at a low operating voltage.