Resistive Switching Behavior in Ferroelectric Heterostructures

Resistive random‐access memory (RRAM) is a promising candidate for next‐generation nonvolatile random‐access memory protocols. The information storage in RRAM is realized by the resistive switching (RS) effect. The RS behavior of ferroelectric heterostructures is mainly controlled by polarization‐dominated and defect‐dominated mechanisms. Under certain conditions, these two mechanisms can have synergistic effects on RS behavior. Therefore, RS performance can be effectively improved by optimizing ferroelectricity, conductivity, and interfacial structures. Many methods have been studied to improve the RS performance of ferroelectric heterostructures. Typical approaches include doping elements into the ferroelectric layer, controlling the oxygen vacancy concentration and optimizing the thickness of the ferroelectric layer, and constructing an insertion layer at the interface. Here, the mechanism of RS behavior in ferroelectric heterostructures is briefly introduced, and the methods used to improve RS performance in recent years are summarized. Finally, existing problems in this field are identified, and future development trends are highlighted.     

Laser–Material Interactions for Flexible Applications

The use of lasers for industrial, scientific, and medical applications has received an enormous amount of attention due to the advantageous ability of precise parameter control for heat transfer. Laser‐beam‐induced photothermal heating and reactions can modify nanomaterials such as nanoparticles, nanowires, and two‐dimensional materials including graphene, in a controlled manner. There have been numerous efforts to incorporate lasers into advanced electronic processing, especially for inorganic‐based flexible electronics. In order to resolve temperature issues with plastic substrates, laser–material processing has been adopted for various applications in flexible electronics including energy devices, processors, displays, and other peripheral electronic components. Here, recent advances in laser–material interactions for inorganic‐based flexible applications with regard to both materials and processes are presented.     

Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls

Fluorite-structure ferroelectrics — in particular the orthorhombic phase of HfO₂ — are of paramount interest to academia and industry because they show unprecedented scalability down to 1-nm-thick size and are compatible with Si electronics. However, their polarization switching is believed to be limited by the intrinsically high energy barrier of ferroelectric domain wall (DW) motions. Here, by unveiling a new topological class of DWs, we establish an atomic-scale mechanism of polarization switching in orthorhombic HfO₂ that exhibits unexpectedly low energy barriers of DW motion (up to 35-fold lower than given by previous conjectures). These findings demonstrate that the nucleation-and-growth-based mechanism is feasible, challenging the commonly held view that the rapid growth of the oppositely polarized domain is impossible. Building on this insight, we describe a strategy to substantially reduce the coercive fields in HfO₂-based ferroelectric devices. Our work is a crucial step towards understanding the polarization switching of HfO₂, which could provide a means to solve the key problems associated with operation speed and endurance.     

Periodic Wrinkle-Patterned Single-Crystalline Ferroelectric Oxide Membranes with Enhanced Piezoelectricity

Self-assembled membranes with periodic wrinkled patterns are the critical building blocks of various flexible electronics, where the wrinkles are usually designed and fabricated to provide distinct functionalities. These membranes are typically metallic and organic materials with good ductility that are tolerant of complex deformation. However, the preparation of oxide membranes, especially those with intricate wrinkle patterns, is challenging due to their inherently strong covalent or ionic bonding, which usually leads to material crazing and brittle fracture. Here, wrinkle-patterned BaTiO₃ (BTO)/poly(dimethylsiloxane) membranes with finely controlled parallel, zigzag, and mosaic patterns are prepared. The BTO layers show excellent flexibility and can form well-ordered and periodic wrinkles under compressive in-plane stress. Enhanced piezoelectricity is observed at the sites of peaks and valleys of the wrinkles where the largest strain gradient is generated. Atomistic simulations further reveal that the excellent elasticity and the correlated coupling between polarization and strain/strain gradient are strongly associated with ferroelectric domain switching and continuous dipole rotation. The out-of-plane polarization is primarily generated at compressive regions, while the in-plane polarization dominates at the tensile regions. The wrinkled ferroelectric oxides with differently strained regions and correlated polarization distributions would pave a way toward novel flexible electronics.     

Piezotronic Tuning of Potential Barriers in ZnO Bicrystals

Coupling of magnetic, ferroelectric, or piezoelectric properties with charge transport at oxide interfaces provides the option to revolutionize classical electronics. Here, the modulation of electrostatic potential barriers at tailored ZnO bicrystal interfaces by stress‐induced piezoelectric polarization is reported. Specimen design by epitaxial solid‐state transformation allows for both optimal polarization vector alignment and tailoring of defect states at a semiconductor–semiconductor interface. Both quantities are probed by transmission electron microscopy. Consequently, uniaxial compressive stress affords a complete reduction of the potential barrier height at interfaces with head‐to‐head orientation of the piezoelectric polarization vectors and an increase in potential barrier height at interfaces with tail‐to‐tail orientation. The magnitude of this coupling between mechanical input and electrical transport opens pathways to the design of multifunctional electronic devices like strain triggered transistors, diodes, and stress sensors with feasible applications for human–computer interfacing.     

25th Anniversary Article: Design of Polymethine Dyes for All‐Optical Switching Applications: Guidance from Theoretical and Computational Studies

All‐optical switching—controlling light with light—has the potential to meet the ever‐increasing demand for data transmission bandwidth. The development of organic π‐conjugated molecular materials with the requisite properties for all‐optical switching applications has long proven to be a significant challenge. However, recent advances demonstrate that polymethine dyes have the potential to meet the necessary requirements. In this review, we explore the theoretical underpinnings that guide the design of π‐conjugated materials for all‐optical switching applications. We underline, from a computational chemistry standpoint, the relationships among chemical structure, electronic structure, and optical properties that make polymethines such promising materials.     

Flexible Transparent Electronic Gas Sensors

Flexible and transparent electronic gas sensors capable of real‐time, sensitive, and selective analysis at room‐temperature, have gained immense popularity in recent years for their potential to be integrated into various smart wearable electronics and display devices. Here, recent advances in flexible transparent sensors constructed from semiconducting oxides, carbon materials, conducting polymers, and their nanocomposites are presented. The sensing material selection, sensor device construction, and sensing mechanism of flexible transparent sensors are discussed in detail. The critical challenges and future development associated with flexible and transparent electronic gas sensors are presented. Smart wearable gas sensors are believed to have great potential in environmental monitoring and noninvasive health monitoring based on disease biomarkers in exhaled gas.     

Normally distributed free energy model and creep behavior of ferroelectric polycrystals at room and high temperatures

A constitutive model that can be used to predict creep behavior of ferroelectric polycrystals at room and high temperatures is proposed. The model consists of the Gibbs free energy function with normal distribution and a switching evolution law with critical driving force. Linear moduli in the free energy function and switching parameters in the switching law are assumed to be linearly dependent on temperature. A ferroelectric polycrystal is modeled by an agglomerate of 210 single crystallites. Compressive stress and electric field-induced creep behavior as well as polarization hysteresis and strain butterfly responses of the model are calculated and compared with experimental observations.     

Defect Engineering on Electrode Materials for Rechargeable Batteries

The reasonable design of electrode materials for rechargeable batteries plays an important role in promoting the development of renewable energy technology. With the in-depth understanding of the mechanisms underlying electrode reactions and the rapid development of advanced technology, the performance of batteries has significantly been optimized through the introduction of defect engineering on electrode materials. A large number of coordination unsaturated sites can be exposed by defect construction in electrode materials, which play a crucial role in electrochemical reactions. Herein, recent advances regarding defect engineering in electrode materials for rechargeable batteries are systematically summarized, with a special focus on the application of metal-ion batteries, lithium–sulfur batteries, and metal–air batteries. The defects can not only effectively promote ion diffusion and charge transfer but also provide more storage/adsorption/active sites for guest ions and intermediate species, thus improving the performance of batteries. Moreover, the existing challenges and future development prospects are forecast, and the electrode materials are further optimized through defect engineering to promote the development of the battery industry.     

Device Physics of Solution‐Processed Organic Field‐Effect Transistors

Field‐effect transistors based on solution‐processible organic semiconductors have experienced impressive improvements in both performance and reliability in recent years, and printing‐based manufacturing processes for integrated transistor circuits are being developed to realize low‐cost, large‐area electronic products on flexible substrates. This article reviews the materials, charge‐transport, and device physics of solution‐processed organic field‐effect transistors, focusing in particular on the physics of the active semiconductor/dielectric interface. Issues such as the relationship between microstructure and charge transport, the critical role of the gate dielectric, the influence of polaronic relaxation and disorder effects on charge transport, charge‐injection mechanisms, and the current understanding of mechanisms for charge trapping are reviewed. Many interesting questions on how the molecular and electronic structures and the presence of defects at organic/organic heterointerfaces influence the device performance and stability remain to be explored.     

Rational Design of Carbon‐Rich Materials for Energy Storage and Conversion

Carbon‐rich materials have drawn tremendous attention toward a wide spectrum of energy applications due to their superior electronic mobility, good mechanical strength, ultrahigh surface area, and more importantly, abundant diversity in structure and components. Herein, rationally designed and bottom‐up constructed carbon‐rich materials for energy storage and conversion are discussed. The fundamental design principles are itemized for the targeted preparation of carbon‐rich materials and the latest remarkable advances are summarized in terms of emerging dimensions including sp² carbon fragment manipulation, pore structure modulation, topological defect engineering, heteroatom incorporation, and edge chemical regulation. In this respect, the corresponding structure–property relationships of the resultant carbon‐rich materials are comprehensively discussed. Finally, critical perspectives on future challenges of carbon‐rich materials are presented. The progress highlighted here will provide meaningful guidance on the precise design and targeted synthesis of carbon‐rich materials, which are of critical importance for the achievement of performance characteristics highly desirable for urgent energy deployment.     

Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials

Following the trend of miniaturization as per Moore's law, and facing the strong demand of next‐generation electronic devices that should be highly portable, wearable, transplantable, and lightweight, growing endeavors have been made to develop novel flexible data storage devices possessing nonvolatile ability, high‐density storage, high‐switching speed, and reliable endurance properties. Nonvolatile organic data storage devices including memory devices on the basis of floating‐gate, charge‐trapping, and ferroelectric architectures, as well as organic resistive memory are believed to be favorable candidates for future data storage applications. In this Review, typical information on device structure, memory characteristics, device operation mechanisms, mechanical properties, challenges, and recent progress of the above categories of flexible data storage devices based on organic nanoscaled materials is summarized.     

Organic multiferroic tunnel junctions with ferroelectric poly(vinylidene fluoride) barriers

Organic materials are promising for applications in spintronics due to their long spin-relaxation times in addition to their chemical flexibility and relatively low production costs. Most studies of organic materials for spintronics focus on nonpolar dielectrics or semiconductors, serving as passive elements in spin transport devices. Here, we demonstrate that employing organic ferroelectrics, such as poly(vinylidene fluoride) (PVDF), as barriers in magnetic tunnel junctions (MTJs) allows new functionality in controlling the tunneling spin polarization via the ferroelectric polarization of the barrier. Using first-principles methods based on density functional theory we investigate the spin-resolved conductance of Co/PVDF/Co and Co/PVDF/Fe/Co MTJs as model systems. We show that these tunnel junctions exhibit multiple resistance states associated with different magnetization configurations of the electrodes and ferroelectric polarization orientations of the barrier. Our results indicate that organic ferroelectrics may open a new and promising route in organic spintronics with implications for low-power electronics and nonvolatile data storage.     

Direct imaging of the spatial and energy distribution of nucleation centres in ferroelectric materials

Macroscopic ferroelectric polarization switching, similar to other first-order phase transitions, is controlled by nucleation centres. Despite 50 years of extensive theoretical and experimental effort, the microstructural origins of the Landauer paradox, that is, the experimentally observed low values of coercive fields in ferroelectrics corresponding to implausibly large nucleation activation energies, are still a mystery. Here, we develop an approach to visualize the nucleation centres controlling polarization switching processes with nanometre resolution, determine their spatial and energy distribution and correlate them to local microstructure. The random-bond and random-field components of the disorder potential are extracted from positive and negative nucleation biases. Observation of enhanced nucleation activity at the 90 composite function domain wall boundaries and intersections combined with phase-field modelling identifies them as a class of nucleation centres that control switching in structural-defect-free materials.     

Nanoscale insight into the statics and dynamics of polarization behavior in thin film ferroelectric capacitors

In this study, we review recent advances in PFM studies of micrometer scale ferroelectric capacitors, summarize the experimental PFM-based approach to investigation of fast switching processes, illustrate what information can be obtained from PFM experiments on domains kinetics, and delineate the scaling effect on polarization reversal mechanism. Particular attention is given to PFM studies of mechanical stress effect on polarization stability.     

Development of ultra-high density silicon nanowire arrays for electronics applications

This article reviews our recent progress on ultra-high density nanowires (NWs) array-based electronics. The superlattice nanowire pattern transfer (SNAP) method is utilized to produce aligned, ultra-high density Si NW arrays. We fi rst cover processing and materials issues related to achieving bulk-like conductivity characteristics from 10 20 nm wide Si NWs. We then discuss Si NW-based fi eld-effect transistors (FETs). These NWs & NW FETs provide terrifi c building blocks for various electronic circuits with applications to memory, energy conversion, fundamental physics, logic, and others. We focus our discussion on complementary symmetry NW logic circuitry, since that provides the most demanding metrics for guiding nanofabrication. Issues such as controlling the density and spatial distribution of both p-and n-type dopants within NW arrays are discussed, as are general methods for achieving Ohmic contacts to both p-and n-type NWs. These various materials and nanofabrication advances are brought together to demonstrate energy effi cient, complementary symmetry NW logic circuits.     

Nanomaterial‐Enabled Stretchable Conductors: Strategies,Materials and Devices

Stretchable electronics are attracting intensive attention due to their promising applications in many areas where electronic devices undergo large deformation and/or form intimate contact with curvilinear surfaces. On the other hand, a plethora of nanomaterials with outstanding properties have emerged over the past decades. The understanding of nanoscale phenomena, materials, and devices has progressed to a point where substantial strides in nanomaterial‐enabled applications become realistic. This review summarizes recent advances in one such application, nanomaterial‐enabled stretchable conductors (one of the most important components for stretchable electronics) and related stretchable devices (e.g., capacitive sensors, supercapacitors and electroactive polymer actuators), over the past five years. Focusing on bottom‐up synthesized carbon nanomaterials (e.g., carbon nanotubes and graphene) and metal nanomaterials (e.g., metal nanowires and nanoparticles), this review provides fundamental insights into the strategies for developing nanomaterial‐enabled highly conductive and stretchable conductors. Finally, some of the challenges and important directions in the area of nanomaterial‐enabled stretchable conductors and devices are discussed.     

Research Advances of Amorphous Metal Oxides in Electrochemical Energy Storage and Conversion

Amorphous metal oxides (AMOs) have aroused great enthusiasm across multiple energy areas over recent years due to their unique properties, such as the intrinsic isotropy, versatility in compositions, absence of grain boundaries, defect distribution, flexible nature, etc. Here, the materials engineering of AMOs is systematically reviewed in different electrochemical applications and recent advances in understanding and developing AMO‐based high‐performance electrodes are highlighted. Attention is focused on the important roles that AMOs play in various energy storage and conversion technologies, such as active materials in metal‐ion batteries and supercapacitors as well as active catalysts in water splitting, metal–air batteries, and fuel cells. The improvements of electrochemical performance in metal‐ion batteries and supercapacitors are reviewed regarding the enhancement in active sites, mechanical strength, and defect distribution of amorphous structures. Furthermore, the high electrochemical activities boosted by AMOs in various fundamental reactions are elaborated on and they are related to the electrocatalytic behaviors in water splitting, metal–air batteries, and fuel cells. The applications in electrochromism and high‐conducting sensors are also briefly discussed. Finally, perspectives on the existing challenges of AMOs for electrochemical applications are proposed, together with several promising future research directions.     

Mutual Insight on Ferroelectrics and Hybrid Halide Perovskites: A Platform for Future Multifunctional Energy Conversion

An insight into the analogies, state‐of‐the‐art technologies, concepts, and prospects under the umbrella of perovskite materials (both inorganic–organic hybrid halide perovskites and ferroelectric perovskites) for future multifunctional energy conversion and storage devices is provided. Often, these are considered entirely different branches of research; however, considering them simultaneously and holistically can provide several new opportunities. Recent advancements have highlighted the potential of hybrid perovskites for high‐efficiency solar cells. The intrinsic polar properties of these materials, including the potential for ferroelectricity, provide additional possibilities for simultaneously exploiting several energy conversion mechanisms such as the piezoelectric, pyroelectric, and thermoelectric effect and electrical energy storage. The presence of these phenomena can support the performance of perovskite solar cells. The energy conversion using these effects (piezo‐, pyro‐, and thermoelectric effect) can also be enhanced by a change in the light intensity. Thus, there lies a range of possibilities for tuning the structural, electronic, optical, and magnetic properties of perovskites to simultaneously harvest energy using more than one mechanism to realize an improved efficiency. This requires a basic understanding of concepts, mechanisms, corresponding material properties, and the underlying physics involved with these effects.