High‐performance MgO thin films for PDPs with a high‐rate sputtering‐deposition process

Abstract— A high‐rate sputtering‐deposition process for MgO thin films for PDP fabrication was recently developed. The deposition rate of the MgO thin film was about 300 nm/min which shows the possibility of production‐line application. The MgO film deposited in this work has a higher density than that of other deposition processes such as electron‐beam deposition and shows good discharge characteristics including firing voltage and discharge formation. These were achieved by controlling the stoichiometry and/or the impurity doping during the sputtering process.     

High‐contrast driving method for advanced CEL structure with magnesium oxide single‐crystal powder in ACPDP

Abstract— A new driving method for an advanced‐CEL‐structure panel has been developed. Picture qualities have been upgraded. Discharge time lags are drastically shortened by priming electron emission from magnesium oxide (MgO) single‐crystal powder, refered to as a crystal emissive layer (CEL). The advanced‐CEL‐structure panel has CEL material on the surface of not only the surface‐discharge‐electrode side but also on the address‐electrode side. This panel structure enables a stable opposed discharge when the address electrode functions as a cathode. By utilizing the opposed discharges in the reset and LSB‐SF sustain periods, the dark‐room contrast ratio has been drastically increased to over 20,000:1, which is higher than five times that of the conventional method, and the luminance of the least‐significant‐bit sub‐field (LSB‐SF) is as low as 0.1 cd/m², which is one‐fourth that of the conventional method. The high‐picture‐quality PDP TVs refered to as “KURO” that employs these technologies have been introduced into the marketplace.     

Improved discharge characteristics using MgO single‐crystal particles and advanced CEL structure

Abstract— Pioneer Corporation introduced plasma‐display‐panel (PDP) TVs in 2005, which achieved the highest dark‐room contrast ratio of 4000:1 at the time. These PDPs had a novel discharge cell structure consisting of a crystal emissive layer (CEL) on a MgO protective thin film. This cell structure is refered to as a CEL structure. Magnesium‐oxide single‐crystal particles, which have a unique luminance peak around 230–250 nm and a good exo‐electron‐emission property, were found to be an excellent material for CEL and were utilized in CEL panels. In 2007, newly developed PDP TVs in which CEL was formed on a phosphor layer, in addition to the previous CEL structure, were introduced, and this discharge cell structure is refered to as advanced CEL structure. By using the new cell structure, the opposed discharge characteristics have been drastically improved, and a stable reset discharge has been realized with only a weak opposed discharge. As a result, black luminance has been drastically reduced, and a dark‐room contrast ratio of over 20,000:1, the highest ever reported, has been achieved.     

Discharge properties and chemical stability of SrZrO films

Abstract— MgO thin film is currently used as a surface protective layer for dielectric materials because MgO has a high resistance during ion sputtering and exhibits effective secondary electron emission. The secondary‐electron‐emission coefficient γ of MgO is high for Ne ions; however, it is low for Xe ions. The Xe content of the discharge gas of PDPs needs to be raised in order to increase the luminous efficiency. Thus, the development of high‐γ materials replacing MgO is required. The discharge properties and chemical surface stability of SrO containing Zr (SrZrO) as the candidate high‐γ protective layer for noble PDPs have been characterized. SrZrO films have superior chemical stability, especially the resistance to carbonation because of the existence of a few adsorption sites due to their amorphous structure. The firing voltage is 60 V lower than that of MgO films for a discharge gas of Ne/Xe = 85/15 at 60 kPa.     

Relationship between exo‐electron currents from MgO thin film and statistical delay time in ACPDPs

Abstract— The exo‐electron currents from a ACPDP test panel with or without MgO crystals sprayed on MgO film were measured directly after eliminating of the wall‐voltage effect. An inverse relationship was established between the statistical delay time and exo‐electron currentfrom the MgO cathode film. The spraying of MgO crystals on MgO thin film was observed to reduce the statistical delay time dramatically even for the same exo‐electron currents measured. The shift of the inverse curve may be attributed to an increased discharge success probability by the MgO crystals sprayed.     

Electron‐beam deposition of MgO on plastic substrate and manufacturing flexible flat fluorescent lamp

Abstract— A flexible fluorescent lamp that utilizes the same plasma discharge mode as in PDPs has been manufactured. The structure of the flexible lamp is simple and easy to manufacture. All‐plastic materials including plastic substrates, barrier ribs (spacers), and sealants for low‐temperature manufacturing processing have been adopted except for the phosphor and MgO thin film. The MgO thin films were coated on the plastic substrates as a protection layer against the plasma discharge. The adhesion and biaxial texture of MgO thin film deposited on the plastic substrates, poly‐ethyle‐nenaphthalate (PEN) and polycarbonate (PC), at low temperature (100–180°C) has been characterized. The MgO film on PEN shows good adhesion under a repeated bending test. The manufactured flexible lamp consists of two plastic substrates of about 3 in. on the diagonal, barrier rib (spacer), and external ITO electrodes. The Ne‐Xe (5%) gas mixture at 100–200 Torr was used for the discharge gas. A maximum surface luminance of about 100 cd/m² was achieved for a 1 ‐kHz AC pulse.     

Highly efficient blue organic light‐emitting diode with high color purity using 4,4′‐N,N′‐dicarbazole‐biphyenyl (CBP) doped with 1,4‐bis[2‐(3‐N‐ethylcarbazoryl) vinyl]benzene (BCzVB)

Abstract— An efficient pure blue multilayer organic light‐emitting diode employing 1,4‐bis[2‐(3‐N‐ethylcarbazoryl)vinyl]benzene (BCzVB) doped into 4,4′‐N,N′‐dicarbazole‐biphyenyl (CBP) is reported. The device structure is ITO (indium tin oxide)/TPD (N,N′‐diphenyl‐N,N′‐bis (3‐methylphenyl)‐1,1′biphenyl‐4,4′diamine)/CBP:BCzVB/Alq₃ (tris‐(8‐hydroxy‐quinolinato) aluminum)/Liq (8‐hydroxy‐quinolinato lithium)/Al; here TPD was used as the hole‐transporting layer, CBP as the blue‐emitting host, BCzVB as the blue dopant, Alq₃ as the electron‐transporting layer, Liq as the electron‐injection layer, and Al as the cathode, respectively. A maximum luminance of 8500 cd/m² and a device efficiency of 3.5 cd/A were achieved. The CIE co‐ordinates were x = 0.15, y = 0.16. The electroluminescent spectra reveal a dominant peak at 448 nm and additional peaks at 476 nm with a full width at half maximum of 60 nm. The Föster energy transfer and, especially, carrier trapping models were considered to be the main mechanism for exciton formation on BCzVB molecules under electrical excitation.     

Characterization of micro‐cell discharge in AC‐PDPs by spatio‐temporal optical emission spectroscopy

Abstract— We have developed highly resolved spatio‐temporal optical emission spectroscopy to investigate the discharge characteristics of coplanar type ac plasma‐display panels (AC‐PDPs). Spatio‐temporal emission profiles were measured for relevant lines of atomic He, Ne, Xe, and ionic Xe in He‐Xe and Ne‐Xe systems with various Xe concentrations and total gas pressures. The surface‐discharge behavior in coplanar PDPs has been clarified.     

Performance of the efficacy enhancement layer using nano‐particles in PDPs

Abstract— A nano‐particle dielectric layer was experimentally placed between a conventional dielectric layer and a MgO thin film. This greatly reduces the discharge current and enhances high luminous efficacy. The current reduction might reflect a capacitance reduction in the entire dielectric layer due to the extremely low permittivity of the nano‐particle layer which includes a large amount of space. The luminous efficacy is improved more than what is expected because of the reduction in capacitance. The layer affects the MgO film properties such as crystal growth size, orientation, cathode luminescence, and exo‐electron emission. As a result, it improves the statistical delay in addressing. This might be caused by the large crystal growth of MgO due to the surface roughness of the nano‐particle layer underneath. The particle size required to optimize the roughness of the large growth is about 10–50 nm. The rise in the discharge voltage accompanied by the nano‐particle layer insertion is improved when the layer is properly patterned. A reduction in luminance is prevented when it is patterned in narrow lines along the X—Y gaps while the improvement in address delay strongly depends on the areal ratio of the nano‐particle layer.     

Electronic structure and electrical conductivity of MgO protecting layer in plasma‐display panels: A tight‐binding quantum chemical study

Abstract— The tight‐binding quantum chemical molecular dynamics code, Colors, has been successfully applied to the electronic‐structure calculations of the MgO‐protecting‐layer model in plasma‐display panels (PDPs). The code succeeded in reproducing the band‐gap energy of the MgO crystal structure. The energy gap between the bottom of the conduction band (CB) and the top of valence band (VB) was 7.45 eV, which is in quantitative agreement with the experimental and previous theoretical results. The electronic structure of the undoped MgO model and Si‐doped MgO model was also calculated. The impurity level was 2.15 eV lower than that for the bottom of the CB. This result was in qualitative agreement with recent cathodoluminescence measurements. In addition, we have already succeeded in developing a novel electrical conductivity simulator using the spatial distribution of the probability density of wave functions obtained from the tight‐binding quantum chemical molecular dynamics code, Colors. The electrical conductivity of the MgO‐protecting‐layer model was estimated with and without an oxygen defect and a significant change in the electrical conductivity of the MgO‐protecting‐layer materials was observed with the introduction of oxygen defects.     

Measurement of exo‐electron emission from MgO thin film of ACPDPs

Abstract— Exo‐electron emission from MgO thin film was measured by attaching a high‐precision current sensor to the address electrode of the rear plate of an ACPDP test panel. The measured results revealed that the exo‐electron emission currents can vary very sensitively with the type of doping elements used in MgO film and the measuring temperature. The activation energy of the exo‐electron emission estimated from the emission curves indicated that the trap levels are between 0.05 and 0.32 eV below the bottom of its conduction band. This suggests that shallow electron‐trap levels within MgO film are mainly responsible for the exo‐electron emission.     

Effect of gas pressure on permanent dark image sticking on a bright screen in AC plasma‐display panels

Abstract— The permanent dark‐image‐sticking phenomenon on a bright screen was examined under various gas pressures in a 42‐in. ACPDP with an He(35%)‐Xe(11%)‐Ne gas composition. Infrared‐emission observations reveal that the discharge characteristics related to the MgO surface are almost the same in both the discharge and non‐discharge cells, whereas luminance observations show a deterioration in the visible‐conversion characteristics related to the phosphor layer in both the discharge and non‐discharge cells. Consequently, the permanent dark‐image‐sticking phenomenon on a bright screen is found to be strongly related to the deposition on the phosphor layer to the Mg species sputtered from the MgO surface due to a repetitive strong sustain discharge. For a decrease in gas pressure, the permanent dark image sticking on a bright screen became worse due to a severe degradation of the visible‐conversion characteristics of the phosphor layer caused by the deposition of higher amounts of sputtered Mg species on the phosphor layer, as confirmed by various measurements, such as V_t closed curves, time‐of‐flight secondary‐ion mass spectrometry, photoluminescence, and atomic‐force‐microscope analyses.     

Efficient white organic light‐emitting diodes based on a balanced split of the exciton‐recombination zone using a graded mixed layer as an electron‐blocking layer

Abstract— Efficient white organic light‐emitting diodes with both a graded mixed layer as the blue‐emitting layer and an electron‐blocking layer, and a DPVBi:Rubrene layer as a yellow‐emitting layer have been demonstrated. The mixing of the two colors occurs due to a balanced split of the exciton‐recombination zone by the graded mixed layer serving as the electron‐blocking layer. The white organic light‐emitting diode with an ITO/2‐TNATA 30 nm/NPB 30 nm/DPVBi:Rubrene (1.0 wt.%) 5 nm/NPB:DPVBi (9:1) 150 nm/NPB:DPVBi (5:5) 75 nm/NPB:DPVBi (3:7) 75 nm/NPB:DPVBi (2:8) 75 nm/NPB:DPVBi (0.5:9.5) 75 nm/BCP 5 nm/Alq³ 30 nm/LiF 0.5 nm/Al 100 nm structure is chosen as a device with an optimal configuration among devices investigated in this study. The employment of the graded mixed layer in the device is effective in suppressing the color shift at different voltages. The white light, with a Commission Internationale d'Eclairage chromaticity coordinates of (0.33, 0.34), is obtained with an applied voltage of 10.5 V for the device. At the applied voltage, the luminance is 4882 cd/m² and the current efficiency is 5.03 cd/A.     

Numerical analysis of density of energy states for electron‐emission sources in MgO

Abstract— An analytical method to determine the density of energy states of electron‐emission sources (EESs) in chemical‐doped MgO is described using a discharge probability model and a thermal excitation and emission model. The density of energy states for multiple types of EESs is represented by using a linear combination of Gaussian functions of which parameters are determined by the theoretical emission time constant of an exoelectron and statistical delay time ts extracted from experimental stochastic distributions of discharge delay time in plasma‐display panels. When applied to Si‐doped MgO, the effective number of Si EES is calculated to be 1.8 × 10⁶ per cell. The average and standard deviations of activation energy have an energy level of 770 meV and a large value of 55 meV. In Si and H co‐doped MgO, the high peak density of [H^2?]⁰ appears at 550 meV. ts at the short time interval of 1 msec decreases and is independent of temperature due to exoelectron emission from the [H^2?]⁰. The dependence of ts at a time interval of 10 msec on temperature becomes weak because the energy structure of the Si EES broadens significantly attributed to the electrostatic effects of the doped H atoms.     

Improved performance of organic light‐emitting devices with ultra‐thin hole‐blocking layers

Abstract— Tris‐(8‐hydroxyqunoline) aluminum (Alq₃)‐based organic light‐emitting devices (OLEDs) using different thickness of 2,9‐Dimethyl‐4,7‐diphenyl‐1,110‐phenanthorline (BCP) as a hole‐blocking layer inserted both in the electron‐ and hole‐transport layers have been fabricated. The devices have a configuration of indium tin oxide (ITO)/m‐MTDATA (80 nm)/BCP (X nm)/NPB (20 nm)/Alq₃ (40 nm)/BCP (X nm)/Alq₃ (60 nm)/Mg: Ag (200 nm), where m‐MTDATA is 4, 4′, 4″‐Tris(N‐3‐methylphenyl‐N‐phenyl‐amino) triphenylamine, which is used to improve hole injection and NPB is N,N′‐Di(naphth‐2‐yl)‐N,N′‐diphenyl‐benzidine. X varies between 0 and 2 nm. For a device with an optimal thickness of 1‐nm BCP, the current and power efficiencies were significantly improved by 47% and 43%, respectively, compared to that of a standard device without a BCP layer. The improved efficiencies are due to a good balance between the electron and hole injection, exciton formation, and confinement within the luminescent region. Based on the optimal device mentioned above, the NPB layer thickness influences the properties of the OLEDs.     

High‐efficiency PDP micro‐discharges

Abstract— High‐efficiency plasma‐display‐panel micro‐discharge characteristics will be discussed. An increase in the discharge efficiency for a higher‐Xe‐content gas mixture is well known. In this article, the interdependency of the capacitive design, the sustain voltage, and the Xe content will be discussed. A high panel efficacy was obtained, especially for the design and driving conditions that govern the development of a fast discharge. A fast discharge was observed for a higher discharge field at sustain voltages higher than 200 V. A +C‐buffer design, where the extra capacitance acts as a local on the panel power source that lowers the voltage decrease inherent to the discharge of the discharge capacitance upon firing, and efficient priming of the discharge at higher sustain frequency, also stimulates a fast‐discharge development. Apparently, a “high‐efficiency fast‐discharge mode” exists. It is proposed that in this mode the cathode sheath is not, or incompletely, formed during the increase in the discharge current, and the electric field in the discharge cell is dominated not by the space charges but by the externally applied voltage. The effective discharge field is lowered, resulting in a lower effective electron temperature and more efficient Xe excitation. Also, under a fast discharge build‐up condition, the electron‐heating efficiency increases, due to a decrease in the ion heating losses in the cathode sheath. In a 4‐in. color plasma‐display test panel, operating in a high‐efficiency discharge mode and containing a 50%Xe in Ne gas mixture, a panel efficacy of 5 lm/W concurrent with a luminance of 5000 cd/m² was realized. This result was obtained at a sustain voltage of 260 V. These data compare favorably with alternative high‐efficacy panel design approaches.     

Microcrystalline silicon: An emerging material for stable thin‐film transistors

Abstract— Top‐gate and bottom‐gate microcrystalline‐silicon thin‐film transistors (TFTs) have been produced at low temperature (150–250°C) by the standard radio‐frequency glow‐discharge technique using three preparation methods: the hydrogen dilution of silane in hydrogen, the layer‐by‐layer technique, and the use of SiF₄‐Ar‐H₂ feedstock. In all cases, a stable top‐gate TFT with mobility values around 1 cm²/V‐sec have been achieved, making them suitable for basic circuit on glass applications. Moreover, the use of SiF₄ gas combined with specific plasma treatments of the a‐SiN:H dielectric produces large columns, even at the interface with the dielectric. This leads to stable bottom‐gate TFTs, fully compatible with today's a‐Si:H production facilities, reaching mobility values up to 3 cm²/V‐sec. These devices are an interesting alternative to laser‐crystallized polysilicon thin films in a growing number of applications.     

A field‐emitter‐array cathode‐ray tube (FEA‐CRT)

Abstract— High‐resolution bright CRT monitors with Spindt‐type field‐emitter arrays (FEA‐CRTs) as electron guns have been realized for the first time. The FEA chip consists of 868 electron sources arranged within an emitter circle 50 μm in diameter and a vertical current limiter (VECTL) which protects the FEA chips from damage caused by an arc electric discharge. The FEA‐CRT has a minimum electron beam diameter of 0.84 mm at 18 kV and 100 μA.     

Radio‐frequency plasma‐display cell

Abstract— This paper demonstrates that it is possible to improve the basic parameters of plasma displays (efficiency, primarily) using AC voltages with frequencies so high that the amplitude of the electron‐drift oscillations is smaller than the inter‐electrode gap. In this case, the voltage drop on sheaths is much smaller than that in the low frequency or DC discharge and, correspondingly, the energy losses in ion heating are also small. Electron losses in the RF discharge are of the diffusion character and sufficiently lower than the losses in a typical AC plasma‐display panel (AC PDP), in which the electron drift to the electrodes is predominant. Hence, the energy cost of gas ionization in the cells of radio‐frequency PDPs (RF PDPs) is also rather low. In the long run, about 80% of the energy absorbed in the RF discharge goes into excitation of the energy level of a Xe atom, yielding UV radiation. The experiments performed show that efficiency of a RF PDP is five times higher than the efficiency of existing AC PDPs and DC PDPs and can exceed 5 lm/W.     

Eu2+‐doped barium thioaluminate EL devices prepared by two‐target pulsed‐electron‐beam evaporation

Abstract— New blue‐emitting thin‐film‐electroluminescent (TFEL) devices that satisfy the requirements for full‐color TFEL displays were developed. Eu²⁺‐doped BaAl²S⁴ thin films were used for the emission layer. BaAl²S⁴:Eu thin films were prepared by two‐target pulsed‐electron‐beam evaporation suitable for the deposition of multinary compounds that have difficulty in obtaining stoichiometoric thin films. The EL spectrum only had a peak at around 470 nm. The Commission Interantionale de l'Eclairge (CIE) color coordinates were x = 0.12 and y = 0.10. The luminance level from a 50‐Hz pulses voltage was 65 cd/m².