RF MEMS开关封装的通孔工艺研究

将喷胶技术应用到金属互联工艺中,此方法可以用于器件的封装。具体工艺步骤如下:在衬底与硅帽键合结束后在底部湿法刻蚀孔200μm。在孔中利用PECVD生长SiO2,优化喷胶工艺在盲孔底部进行光刻,RIE除去SiO2后电镀金与衬底正面器件实现金属互联,传输线从衬底底部引出。针对整个流程中关键的步骤,进行20μm深孔光刻实验,结果证实能在深孔中光刻图形。     

Reconfigurable Beam‐Steering Antenna Using Dipole and Loop Combined Structure for Wearable Applications

This paper proposes a reconfigurable beam‐steering antenna using a bended dipole and a loop. The radiation patterns of the two antennas are cancelled or compensated, and headed towards a specific direction when the dipole and loop antenna are combined at a reasonable ratio. The proposed antenna can steer the beam directions by controlling the operation of two artificial switches. The proposed antenna was manufactured on a PCB (FR‐4) and a flexible PCB (polyimide). In the case of the antenna that was fabricated on a PCB, the maximum beam directions were +50°, 0°, and –50° in the azimuth direction using the two artificial switches, and the antenna gain was 1.96 dBi to 2.48 dBi in the operation bandwidth of 2.47 GHz to 2.53 GHz. Also, the antenna was fabricated on a flexible PCB and measured under various bending conditions for wearable applications.     

翘板式射频MEMS开关的研究

提出了一种新型的翘板式静电射频微系统开关,给出了理论模拟,结构分析结果和工艺制作方法。该结构采用了5μm厚的无应力单晶硅作为开关的可动部分,可以缓解薄膜应力变形。翘板式结构解决了传统静电设计中动作力弱的问题,并且通过调整支点解决了开关回复力不可调的难题。利用该结构可以在保持高隔离度的同时使驱动电压降低,有限元理论模拟驱动电压为5~10V;采用翘板式结构增加了开关的使用周期,而且结构自身具有单刀双掷特点,可以直接应用于高频通信的频道选择。给出了开关共面波导传输线的测试结果和设计讨论。     

A Corner‐Fed Microstrip Circular Antenna with Switchable Polarization

In this paper, a design for a novel microstrip antenna with circular polarization diversity is proposed and experimentally investigated. This antenna is excited by a microstrip line, which is located at the corner of a circular patch. The polarization state can be switched electrically by setting a diode to on or off. The novel structure we describe here enables the optimization of the input match for both polarizations. From the measured result, good axial ratios are observed at the operating frequencies.     

高隔离度宽频段组合式RF-MEMS开关的设计

接触式与电容耦合式两类RF MEMS开关各自在一定的频段内,都具有较高的隔离度,但仍然很难满足微波控制系统中对高隔离度的要求.为了获得全波段高隔离度RF MEMS开关,单元开关很难达到要求,在此目标要求下,提出了组合式RF MEMS开关的设计,分别利用HFSS软件对各单元进行结构参数优化,再将两者集成在一起,得到的组合式RF MEMS开关,这种组合式开关在0～20 GHz时隔离度都高于-60 dB,在(≤5 GHz),隔离度高于-70 dB,这是一般单元开关及其他半导体固态开关所无法企及的,而且,在DC～20 GHz范围内,开关的插入损耗小于-0.20 dB,而且并没因隔离度的提高,牺牲了插入损耗.     

高电容比射频/微波MEMS膜开关的理论分析和数值模拟

建立了一个MEMS膜开关电容比理论模型，由于这个模型比较全面地考虑了开关阈值电压、维持电压、偏置电压和介质膜内的电场强度等因素对电容比的影响，因而能较为正确地反映开关的电容特性。用数值方法计算了影响开关电容比的因素，并对计算结果进行了分析和讨论。提出了使用脉冲电压作为偏置电压可以使介质膜gj的厚度减少到50nm，从而使开关的电容比增加到3800。最后，讨论了实现高电容比MEMS膜开关的可行性。     

Analysis of Single‐RF MIMO Receiver with Beam‐Switching Antenna

This paper proposes a single‐RF MIMO receiver that adopts a beam‐switching antenna (BSA) instead of a conventional array antenna. The beauty of the proposed single‐RF MIMO receiver with BSA is that it can be deployed in a very small physical space while achieving a full spatial multiplexing gain. Our analysis has revealed that the use of a BSA inevitably results in the spectrum spreading effect at the RF output, which in turn causes an SNR decrease and adjacent channel interference (ACI). Two novel receiver techniques are proposed to mitigate the issues of redundant sub‐band suppression and ACI avoidance. Numerical analysis results verify the performance improvement from the proposed receiver techniques.     

Broadband Stacked Patch Antenna with Low VSWR and Low Cross‐Polarization

A low cross‐polarization broadband stacked patch antenna is proposed. By means of the stacked patch configuration and probe‐fed strip feed technique, the VSWR 1.2:1 bandwidth of the patch antenna is enhanced to 22% from 804 MHz to 1,002 MHz, which outperforms the other available patch antennas (<10%). Furthermore, the antenna has a cross‐polarization level of less than ?20 dB and a gain level of about 9 dBi across the operating bandwidth. Simulation results are compared with the measurements, and a good agreement is observed.     

λ/64‐spaced compact ESPAR antenna via analog RF switches for a single RF chain MIMO system

In this study, an electronically steerable parasitic array radiator (ESPAR) antenna via analog radio frequency (RF) switches for a single RF chain MIMO system is presented. The proposed antenna elements are spaced at λ/64, and the antenna size is miniaturized via a dielectric radome. The optimum reactance load value is calculated via the beamforming load search algorithm. A switch simplifies the design and implementation of the reactance loads and does not require additional complex antenna matching circuits. The measured impedance bandwidth of the proposed ESPAR antenna is 1,500 MHz (1.75 GHz–3.25 GHz). The proposed antenna exhibits a beam pattern that is reconfigurable at 2.48 GHz due to changes in the reactance value, and the measured peak antenna gain is 4.8 dBi. The reception performance is measured by using a 4  4 BPSK signal. The measured average SNR is 17 dB when using the proposed ESPAR antenna as a transmitter, and the average SNR is 16.7 dB when using a four‐conventional monopole antenna.     

Dual‐Polarized Small Base Station Antenna Integrated RF Module Applicable to Various Cell Environments for Next‐Generation Mobile Communication Service

A small dual‐polarized base station antenna with a simple isolation patch is presented. A high isolation is achieved when using a shorted metallic isolation patch. The experimental results indicate that the measured impedance bandwidth of the proposed antenna is 1.72 GHz to 1.89 GHz for small cell systems and that the isolation is more than 30 dB. The proposed antenna exhibits good radiation patterns with a peak gain of 8 dBi.     

A Fully‐Integrated Penta‐Band Tx Reconfigurable Power Amplifier with SOI CMOS Switches for Mobile Handset Applications

A fully‐integrated penta‐band reconfigurable power amplifier (PA) is developed for handset Tx applications. The output structure of the proposed PA is composed of the fixed output matching network, power and frequency reconfigurable networks, and post‐PA distribution switches. In this work, a new reconfiguration technique is proposed for a specific band requiring power and frequency reconfiguration simultaneously. The design parameters for the proposed reconfiguration are newly derived and applied to the PA. To reduce the module size, the switches of reconfigurable output networks and post‐PA switches are integrated into a single IC using a 0.18 μm silicon‐on‐insulator CMOS process, and a compact size of 5 mm × 5 mm is thus achieved. The fabricated W‐CDMA PA module shows adjacent channel leakage ratios better than ?39 dBc up to the rated linear power and power‐added efficiencies of higher than around 38% at the maximum linear output power over all the bands. Efficiency degradation is limited to 2.5% to 3% compared to the single‐band reference PA.     

A 0.13 μm CMOS UWB RF Transmitter with an On‐Chip T/R Switch

This paper presents a fully integrated 0.13 μm CMOS MB‐OFDM UWB transmitter chain (mode 1). The proposed transmitter consists of a low‐pass filter, a variable gain amplifier, a voltage‐to‐current converter, an I/Q up‐mixer, a differential‐to‐single‐ended converter, a driver amplifier, and a transmit/receive (T/R) switch. The proposed T/R switch shows an insertion loss of less than 1.5 dB and a Tx/Rx port isolation of more than 27 dB over a 3 GHz to 5 GHz frequency range. All RF/analog circuits have been designed to achieve high linearity and wide bandwidth. The proposed transmitter is implemented using IBM 0.13 μm CMOS technology. The fabricated transmitter shows a ?3 dB bandwidth of 550 MHz at each sub‐band center frequency with gain flatness less than 1.5 dB. It also shows a power gain of 0.5 dB, a maximum output power level of 0 dBm, and output IP3 of +9.3 dBm. It consumes a total of 54 mA from a 1.5 V supply.     

Characterization of an Oxidized Porous Silicon Layer by Complex Process Using RTO and the Fabrication of CPW‐Type Stubs on an OPSL for RF Application

This paper proposes a 10‐µm thick oxide layer structure that can be used as a substrate for RF circuits. The structure has been fabricated using an anodic reaction and complex oxidation, which is a combined process of low‐temperature thermal oxidation (500 °C, for 1 hr at H₂O/O₂) and a rapid thermal oxidation (RTO) process (1050 °C, for 1 min). The electrical characteristics of the oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current density through the OPSL of 10 µm was about 10 to 50 nA/cm² in the range of 0 to 50 V. The average value of the breakdown field was about 3.9 MV/cm. From the X‐ray photo‐electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL prepared by a complex process were confirmed to be completely oxidized. The role of the RTO process was also important for the densification of the porous silicon layer (PSL) oxidized at a lower temperature. The measured working frequency of the coplanar waveguide (CPW) type short stub on an OPSL prepared by the complex oxidation process was 27.5 GHz, and the return loss was 4.2 dB, similar to that of the CPW‐type short stub on an OPSL prepared at a temperature of 1050 °C (1 hr at H2O/O2). Also, the measured working frequency of the CPW‐type open stub on an OPSL prepared by the complex oxidation process was 30.5 GHz, and the return was 15 dB at midband, similar to that of the CPW‐type open stub on an OPSL prepared at a temperature of 1050 °C (1 hr at H₂O/O₂).