High‐efficiency organic light‐emitting diodes based on the gradient doping and nonlinear cross‐fading doping in transporting layers

We have demonstrated that carrier injection and transporting can be fine‐tuned via gradient p‐doping and n‐doping in organic light‐emitting diodes. The doping profile of gradient doping in transporting layer is ultrahigh at the electrode side, declining gradually with the depth into the device until the emission layer. This not only ensures perfect charge injection from electrode to organic transporting layer but also proves an efficient charge transport for light emission. It is proposed that low doping ratio close to the emission layer may avoid possible quenching of excitons by the diffusion of dopant as well. A device based on gradient doping has been proved to obtain better carrier injection and achieve higher external quantum efficiency. To get smoother charge injection and transporting, and simplify the fabrication process, we have developed a nonlinear cross‐fading doping in transporting layer, which has been demonstrated to further enhance the current density characteristics.     

Current‐mode ambient‐light sensing circuit using p‐type low‐temperature polycrystalline‐silicon TFTs and p‐i‐m diodes

Abstract— A current‐mode ambient‐light sensing circuit, which is composed of p‐intrinsic‐metal (p‐i‐m) diodes and p‐type low‐temperature polycrystalline‐silicon (LTPS) thin‐film transistors (TFTs) for autobrightness control of display panels. The proposed sensing circuit exhibits a wide dynamic range of 56 dB, while the output signal range is 1.8 times wider than that of a previously reported sensing circuit.     

Characterization of light extraction efficiency for WOLEDS with light‐out‐coupling layer

We studied the light extraction efficiencies of white organic light‐emitting diodes with a light‐out‐coupling layer by simulations and experiments. The light extraction efficiencies estimated by the simulation were confirmed to agree well with those measured by the experiments. Moreover, we successfully obtained the high light extraction efficiency (η_OC) of 69%.     

Composite silver electrode for double‐sided‐emitting stacked organic light‐emitting diode

Abstract— A reflective composite silver electrode is proposed and characterized as the middle electrode of a stacked organic light‐emitting diode (OLED) with double‐sided light emission. The proposed electrode is composed of a thermally evaporated stack of LiF (1 nm)/Al (3 nm)/Ag (70 nm) layers. The LiF/Al and the plasma‐treated Ag of the electrode function well as the respective cathode and anode of the bottom‐ and top‐emitting stacked OLEDs, with both being of the non‐inverted type. Power efficiencies of 10.3 and 12.1 lm/W at 100 cd/m² have been measured for bottom‐ and top‐emitting OLEDs, respectively, using dye doping. The stacked OLED having this bipolar middle electrode can be constructed as a two‐terminal‐only device, allowing for simpler driving schemes in double‐side‐emitting passive‐/active‐matrix OLED displays.     

Organic light‐emitting diodes with enhanced out‐coupling efficiency using high‐refractive‐index glass frit

We have fabricated a novel type of substrate for organic light‐emitting diodes (OLEDs) to improve the light out‐coupling efficiency. It was fabricated by forming an excellent flat layer using a high‐refractive‐index B₂O₃‐SiO₂‐Bi₂O₃ frit glass on the light diffusive glass substrate. By using this substrate, we have sufficiently reduced the total internal reflection of OLEDs, and we successfully obtained more than 1.9 times higher light out‐coupling efficiency without spectral changes and viewing angle dependency. Furthermore, we have also successfully demonstrated 50 × 50 mm large‐area white OLEDs with this novel substrate.     

Solution‐processable thermally activated delayed fluorescence emitters for application in organic light emitting diodes

Solution‐processed organic light emitting diodes (OLEDs) have been fabricated using the thermally activated delayed fluorescence (TADF) emitter, DACT‐II, and its soluble derivative, tBu‐DACT‐II, as emitting dopants. DACT‐II reportedly exhibits very high external quantum efficiencies (EQEs) in vacuum‐processed OLEDs. The solution‐processed DACT‐II‐based and tBu‐DACT‐II‐based OLEDs exhibited external quantum efficiency exceeding the theoretical upper limit of classical fluorescent OLEDs.     

Solution‐processable double‐layered ionic p‐i‐n organic light‐emitting diodes

Abstract— Solution‐processed double‐layered ionic p‐i‐n organic light‐emitting diodes (OLEDs), comprised of an emitting material layer doped with an organometallic green phosphor and a photo‐cross‐linked hole‐transporting layer doped with photo‐initiator is reported. The fabricated OLEDs were annealed using simultaneous thermal and electrical treatments to form a double‐layered ionic p‐i‐n structure. As a result, an annealed double‐layered OLED with a peak brightness over 20,000 cd/m² (20 V, 390 mA/cm²) and a peak efficiency of 15 cd/A (6 V, 210 cd/m²) was achieved.     

Electrical simulations of doped multilayer organic light‐emitting diodes (OLEDs) under temperature stress for high current densities

Abstract— This work aims at explaining and predicting the influence of the thickness of organic materials, dye doping, and space‐charge effects on charge‐carrier transport at different operating temperatures for high current densities (50 ≤ J ≤ 7000 mA/cm²). For the purpose of determining these influences, current‐voltage characteristics for typical electrically doped multilayer organic light‐emitting diodes (OLEDs) have been simulated. The results of the simulations concur with experimental data.     

Improved performances in organic and polymer light‐emitting diodes using solution‐processed vanadium pentoxide as a hole injection layer

We report that a solution‐processed vanadium pentoxide (V₂O₅) layer can be utilized as an effective and stable hole injection layer in organic light‐emitting diodes and polymer light‐emitting diodes instead of polyethylene dioxythiophene : polystyrenesulfonate (PEDOT : PSS). The organic light‐emitting diode and polymer light‐emitting diode with the V₂O₅ layer have driving voltages that are 2.2 and 0.3 V lower for 1000 cd/m², respectively, than the devices with PEDOT : PSS. In addition, the devices with the V₂O₅ layer show improved operational stability compared with the devices with PEDOT : PSS. Therefore, a solution‐processed V₂O₅ layer can be utilized as an effective and stable hole injection layer instead of PEDOT : PSS.     

Lithium doping and gate dielectric dependence study of solution‐processed zinc‐oxide thin‐film transistors

Abstract— The effects of lithium (Li) doping concentration and gate dielectrics on the performance of solution‐processed zinc‐oxide (ZnO) thin‐film transistors (TFTs) has been investigated. ZnO films with strong c‐axis orientation and lower background conductivity was obtained with 15 at.% of Li. Different crystallization behavior of ZnO was observed in the case of various dielectric surfaces. The 15‐at.% Li‐doped ZnO films (thickness ～20 nm) prepared on SiO² and SiN^x were found to be present in crystalline form, whereas the film prepared on aluminum titanium oxide (ATO) was found to be amorphous. A field‐effect mobility of 1.81 cm²/V‐sec and an Ion/Ioff ratio of 2 × 10⁶ were obtained for the 15‐at.% Li‐doped ZnO TFTs with a bilayer gate dielectric of SiO² and SiN^x. The comparison of dielectric studies showed that the performance of TFTs prepared on SiN^x and ATO are higher than that of the TFTs prepared on SiO².     

4032 ppi High‐resolution OLED microdisplay

A 0.5‐inch Ultra Extended Graphics Array (UXGA) organic light‐emitting diodes microdisplay has been developed with 6.3 μm pixel pitch. Not only 4032 ppi high resolution but high frame rate, low power consumption, wide viewing angle, and high luminance have been achieved. This newly developed organic light‐emitting diodes microdisplay is suitable for Near‐to‐Eye display applications, especially electronic viewfinders.     

Development of flexible displays using back‐channel‐etched In–Sn–Zn–O thin‐film transistors and air‐stable inverted organic light‐emitting diodes

We developed flexible displays using back‐channel‐etched In–Sn–Zn–O (ITZO) thin‐film transistors (TFTs) and air‐stable inverted organic light‐emitting diodes (iOLEDs). The TFTs fabricated on a polyimide film exhibited high mobility (32.9 cm²/Vs) and stability by utilization of a solution‐processed organic passivation layer. ITZO was also used as an electron injection layer (EIL) in the iOLEDs instead of conventional air‐sensitive materials. The iOLED with ITZO as an EIL exhibited higher efficiency and a lower driving voltage than that of conventional iOLEDs. Our approach of the simultaneous formation of ITZO film as both of a channel layer in TFTs and of an EIL in iOLEDs offers simple fabrication process.     

Efficient and bright blue‐emitting phosphorescent materials

Abstract— A new type of ancillary ligand for blue‐emitting heteroleptic iridium complexes has been successfully developed. New ligands, 3‐(trifluoromethyl)‐5‐(pyridin‐2‐yl)‐1,2,4‐triazolate and 5‐(pyridin‐2‐yl)‐tetrazolate, show stronger blue‐shifting power than that of the picolate of FIrpic [iridium (III) bis(4,6‐difluorophenylpyridinato)picolate]. Organic light‐emitting diodes (OLEDs) fabricated with a new complex, FIrtaz [iridium (III) bis(4,6‐difluorophenylpyridinato)(5‐(pyridine‐2‐yl)‐1,2,4‐triazolate) or FIrN4 [(iridium (III) bis(4,6‐difluorophenylpyridinato)(5‐(pyridin‐2‐yl)‐tetrazolate], as the blue dopant in the host of mCP [1,3‐ bis(9‐carbazolyl)benzene], exhibit near‐saturated blue electrophosphorescence with Commision Internale de l'Eclairage (CIE^x,y) coordinates of (0.14, 0.18) and (0.15, 0.24), respectively.     

Surface‐light‐emitting transistors based on vertical‐type metal‐base organic transistors

Abstract— Light‐emitting transistors having a metal‐base organic transistor (MBOT) structure demonstrate both the function of an organic thin‐film transistor (OTFT) and organic light‐emitting diode (OLED). The MBOT is a vertical‐type organic transistor having a simple structure composed of organic/metal/organic layers demonstrating high‐current and low‐voltage operation. The light‐emitting MBOT was fabricated simply by inserting additional layers of hole‐transporting and emissive materials used in the OLED into the col lector layer. The device showed perfect surface emission similar to an OLED. A luminance modulation of 370 cd/m² was observed at a collector voltage of 20 V and a base voltage of 3 V. This device can be applied to an OLED display device to increase the numerical aperture or reduce the required current of the TFT backplane.     

High‐efficiency UV LEDs and RGB white LEDs for lighting and LCD backlights

Abstract— Progress in the development of blue light‐emitting diodes and yellow phosphor has led to the realization of solid‐state lighting. The development was followed by improvement in the luminous efficacy of ultraviolet light‐emitting diodes (UV‐LEDs). By using near‐UV‐LEDs (n‐UV‐LEDs) excited light for red, green, and blue (RGB) phosphors, a new type of solid‐state lighting was realized. An innovative method for increasing the efficiency of LEDs by using a silicon nitride layer as the active layer and piling them up to a nano‐sized level with nano‐sized holes has been developed.     

A novel electron‐transport material for organic light‐emitting devices

Abstract— A nanocrystalline electron‐transport material [ET68] was introduced into organic light‐emitting devices (OLEDs). By integrating a p‐doped transport system and phosphorescent emitters, a very bright and stable device could be obtained. Furthermore, 40% saving in power consumption can be achieved when the efficient pixels with ET68 were applied to AMOLEDs.     

Spatio‐temporal scanning backlight mode for field‐sequential‐color optically‐compensated‐bend liquid‐crystal display

Abstract— A spatially and temporally scanning backlight consisting of ten isolated micro‐structured light guides has been developed to be combined with a fast‐response optically‐compensated‐bend‐mode field‐sequential‐color LCD in which the liquid‐crystal cell does not contain color filters. The sequential fields of three primary colors are generated by illumination of the red‐, green‐, and blue‐light‐emitting diodes, each illuminating for one‐half of the field, resulting in a luminance of 200 cd/m² for the LCD. The effect of light leakage between the blocks in the scanning backlight in field‐sequential‐color applications was measured and will be described.     

High‐efficiency p‐i‐n organic light‐emitting diodes with long lifetime

Abstract— High‐performance organic light‐emitting diodes (OLEDs) are promoting future applications of solid‐state lighting and flat‐panel displays. We demonstrate here that the performance demands for OLEDs are met by the PIN (p‐doped hole‐transport layer/intrinsically conductive emission layer/n‐doped electron‐transport layer) approach. This approach enables high current efficiency, low driving voltage, as well as long OLED lifetimes. Data on very‐high‐efficiency diodes (power efficiencies exceeding 70 lm/W) incorporating a double‐emission layer, comprised of two bipolar layers doped with tris(phenylpyridine)iridium [Ir(ppy)₃], into the PIN architecture are shown. Lifetimes of more than 220,000 hours at a brightness of 150 cd/m² are reported for a red PIN diode. The PIN approach further allows the integration of highly efficient top‐emitting diodes on a wide range of substrates. This is an important factor, especially for display applications where the compatibility of PIN OLEDs with various kinds of substrates is a key advantage. The PIN concept is very compatible with different backplanes, including passive‐matrix substrates as well as active‐matrix substrates on low‐temperature polysilicon (LTPS) or, in particular, amorphous silicon (a‐Si).     

Efficient white organic light‐emitting diodes based on a balanced split of the exciton‐recombination zone using a graded mixed layer as an electron‐blocking layer

Abstract— Efficient white organic light‐emitting diodes with both a graded mixed layer as the blue‐emitting layer and an electron‐blocking layer, and a DPVBi:Rubrene layer as a yellow‐emitting layer have been demonstrated. The mixing of the two colors occurs due to a balanced split of the exciton‐recombination zone by the graded mixed layer serving as the electron‐blocking layer. The white organic light‐emitting diode with an ITO/2‐TNATA 30 nm/NPB 30 nm/DPVBi:Rubrene (1.0 wt.%) 5 nm/NPB:DPVBi (9:1) 150 nm/NPB:DPVBi (5:5) 75 nm/NPB:DPVBi (3:7) 75 nm/NPB:DPVBi (2:8) 75 nm/NPB:DPVBi (0.5:9.5) 75 nm/BCP 5 nm/Alq³ 30 nm/LiF 0.5 nm/Al 100 nm structure is chosen as a device with an optimal configuration among devices investigated in this study. The employment of the graded mixed layer in the device is effective in suppressing the color shift at different voltages. The white light, with a Commission Internationale d'Eclairage chromaticity coordinates of (0.33, 0.34), is obtained with an applied voltage of 10.5 V for the device. At the applied voltage, the luminance is 4882 cd/m² and the current efficiency is 5.03 cd/A.     

High‐temperature thin‐film barriers for foldable AMOLED displays

We present a thin‐film dual‐layer bottom barrier on polyimide that is compatible with 350°C backplane processing for organic light‐emitting diode displays and that can facilitate foldable active‐matrix organic light‐emitting diode devices with a bending radius of <2 mm. We demonstrate organic light‐emitting diodes that survive bending over 0.5 mm radius for 10.000× based on the high‐temperature bottom barrier. Furthermore, we show compatibility of the bottom barrier with the backplane process by fabricating active‐matrix organic light‐emitting diode displays on GEN1‐sized substrates.