Few electron limit of n-type metal oxide semiconductor single electron transistors

We report the electronic transport on n-type silicon single electron transistors (SETs) fabricated in complementary metal oxide semiconductor (CMOS) technology. The n-type metal oxide silicon SETs (n-MOSSETs) are built within a pre-industrial fully depleted silicon on insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 × 20 nm(2) is obtained by employing electron beam lithography for active and gate level patterning. The Coulomb blockade stability diagram is precisely resolved at 4.2 K and it exhibits large addition energies of tens of meV. The confinement of the electrons in the quantum dot has been modeled by using a current spin density functional theory (CS-DFT) method. CMOS technology enables massive production of SETs for ultimate nanoelectronic and quantum variable based devices.     

Microfluidics for Processing Surfaces and Miniaturizing Biological Assays

This review is an account of our efforts to develop a versatile and flexible microfluidic technology for surface‐processing applications and miniaturizing biological assays. The review is presented in the context of current trends in microfluidic technology and addresses some of the major challenges for confining chemical and biochemical processes on surfaces: the sealing of a microchannel with a surface, the world‐to‐chip interface, the displacement of liquids in small conduits, the sequential delivery of multiple solutions, the accurate patterning of surfaces, the coincident detection of various analytes, and the detection of analytes in a small and dilute sample. Our solutions to these problems include the use of reversible sealing, capillary phenomena for powering and controlling liquid transport, and non‐contact microfluidics for spotting and drawing (on surfaces) with flow conditions. These solutions offer many advantages over conventional techniques for handling minute amounts of liquids and may find applications in lithography, biopatterning (e.g., the patterning of biomolecules), diagnostics, drug discovery, and also cellular assays.     

Fabrication of Transistors on Flexible Substrates: from Mass‐Printing to High‐Resolution Alternative Lithography Strategies

In this report, the development of conventional, mass‐printing strategies into high‐resolution, alternative patterning techniques is reviewed with the focus on large‐area patterning of flexible thin‐film transistors (TFTs) for display applications. In the first part, conventional and digital printing techniques are introduced and categorized as far as their development is relevant for this application area. The limitations of conventional printing guides the reader to the second part of the progress report: alternative‐lithographic patterning on low‐cost flexible foils for the fabrication of flexible TFTs. Soft and nanoimprint lithography‐based patterning techniques and their limitations are surveyed with respect to patterning on low‐cost flexible foils. These show a shift from fabricating simple microlense structures to more complicated, high‐resolution electronic devices. The development of alternative, low‐temperature processable materials and the introduction of high‐resolution patterning strategies will lead to the low‐cost, self‐aligned fabrication of flexible displays and solar cells from cheaper but better performing organic materials.     

Rapid and Low‐Cost Prototyping of 3D Nanostructures with Multi‐Layer Hydrogen Silsesquioxane Scaffolds

A layer‐by‐layer (LBL) method can generate or approximate any three‐dimensional (3D) structure, and has been the approach for the manufacturing of complementary metal‐oxide‐semiconductor (CMOS) devices. However, its high cost precludes the fabrication of anything other than CMOS‐compatible devices, and general 3D nanostructures have been difficult to prototype in academia and small businesses, due to the lack of expensive facility and state‐of‐the‐art tools. It is proposed and demonstrated that a novel process that can rapidly fabricate high‐resolution three‐dimensional (3D) nanostructures at low cost, without requiring specialized equipment. An individual layer is realized through electron‐beam lithography patterning of hydrogen silsesquioxane (HSQ) resist, followed by planarization via spinning SU‐8 resist and etch‐back. A 4‐layer silicon inverse woodpile photonic crystal with a period of 650 nm and a 7‐layer HSQ scaffold with a period of 300 nm are demonstrated. This process provides a versatile and accessible solution to the fabrication of highly complex 3D nanostructures.     

Chemically Functionalized Surface Patterning

Patterning substrates with versatile chemical functionalities from micro‐ to nanometer scale is a long‐standing and interesting topic. This review provides an overview of a range of techniques commonly used for surface patterning. The first section briefly introduces conventional micropatterning tools, such as photolithography and microcontact printing. The second section focuses on the currently used nanolithographic techniques, for example, scanning probe lithography (SPL), and their applications in surface patterning. Their advantages and disadvantages are also demonstrated. In the last section, dip‐pen nanolithography (DPN) is emphatically illustrated, with a particular stress on the patterning and applications of biomolecules.     

Electrical Biomolecule Detection Using Nanopatterned Silicon via Block Copolymer Lithography

An electrical biosensor exploiting a nanostructured semiconductor is a promising technology for the highly sensitive, label‐free detection of biomolecules via a straightforward electronic signal. The facile and scalable production of a nanopatterned electrical silicon biosensor by block copolymer (BCP) nano­lithography is reported. A cost‐effective and large‐area nanofabrication, based on BCP self‐assembly and single‐step dry etching, is developed for the hexagonal nanohole patterning of thin silicon films. The resultant nanopatterned electrical channel modified with biotin molecules successfully detects the two proteins, streptavidin and avidin, down to nanoscale molarities (≈1 nm ). The nanoscale pattern comparable to the Debye screening length and the large surface area of the three‐dimensional silicon nanochannel enable excellent sensitivity and stability. A device simulation confirms that the nanopatterned structure used in this work is effective for biomolecule detection. This approach relying on the scalable self‐assembly principle offers a high‐throughput manufacturing process for clinical lab‐on‐a‐chip diagnoses and relevant biomolecular studies.     

High aspect subdiffraction-limit photolithography via a silver superlens

Photolithography is the technology of choice for mass patterning in semiconductor and data storage industries. Superlenses have demonstrated the capability of subdiffraction-limit imaging and been envisioned as a promising technology for potential nanophotolithography. Unfortunately, subdiffraction-limit patterns generated by current superlenses exhibited poor profile depth far below the requirement for photolithography. Here, we report an experimental demonstration of sub-50 nm resolution nanophotolithography via a smooth silver superlens with a high aspect profile of ~45 nm, as well as grayscale subdiffraction-limit three-dimensional nanopatterning. Theoretical analysis and simulation show that smooth interfaces play a critical role. Superlens-based lithography can be integrated with conventional UV photolithography systems to endow them with the capability of nanophotolithography, which could provide a cost-effective approach for large scale and rapid nanopatterning.     

Sub-30 nm gate template fabrication for nanoimprint lithography using spacer patterning technology

In this study, we present a spacer patterning technology for sub-30 nm gate template which is used for nano-scale MOSFETs fabrication. A spacer patterning technology using a poly-silicon micro-feature and a chemical vapor deposition (CVD) SiO2 spacer has been developed, and the sub-30 nm structures by conventional dry etching and chemical mechanical polishing are demonstrated. The minimum-sized features are defined not by the photolithography but by the CVD film thickness. Therefore, this technology yields a large-area template with critical dimension of minimum-sized features much smaller than that achieved by optical lithography.     

Fabrication of 20 nm half-pitch gratings by corrugation-directed self-assembly

The evolution of the scaling of modern semiconductor devices is governed by the ability to create scalable high-resolution patterns on substrates. Since it is becoming increasingly difficult and expensive to extend to smaller dimensions using optical lithography, there is a great deal of interest in alternative patterning methods. The self-assembly of block copolymers in thin films, which provides periodic patterns of 10-50?nm length scales, has been recognized as a promising candidate for such patterning. To be practical, however, this approach must provide control over the orientation and lateral placement of the microdomains. We report here our discovery of the controlled alignment of the lamellar microdomains of a block copolymer containing hybrid material using topographic pre-patterns on substrates. We find that this hybrid material forms lamellae with a half-pitch of approximately 20?nm perpendicular to the lines of a surface corrugation.     

Thread‐Like CMOS Logic Circuits Enabled by Reel‐Processed Single‐Walled Carbon Nanotube Transistors via Selective Doping

The realization of large‐area electronics with full integration of 1D thread‐like devices may open up a new era for ultraflexible and human adaptable electronic systems because of their potential advantages in demonstrating scalable complex circuitry by a simply integrated weaving technology. More importantly, the thread‐like fiber electronic devices can be achieved using a simple reel‐to‐reel process, which is strongly required for low‐cost and scalable manufacturing technology. Here, high‐performance reel‐processed complementary metal‐oxide‐semiconductor (CMOS) integrated circuits are reported on 1D fiber substrates by using selectively chemical‐doped single‐walled carbon nanotube (SWCNT) transistors. With the introduction of selective n‐type doping and a nonrelief photochemical patterning process, p‐ and n‐type SWCNT transistors are successfully implemented on cylindrical fiber substrates under air ambient, enabling high‐performance and reliable thread‐like CMOS inverter circuits. In addition, it is noteworthy that the optimized reel‐coating process can facilitate improvement in the arrangement of SWCNTs, building uniformly well‐aligned SWCNT channels, and enhancement of the electrical performance of the devices. The p‐ and n‐type SWCNT transistors exhibit field‐effect mobility of 4.03 and 2.15 cm² V^?1 s^?1, respectively, with relatively narrow distribution. Moreover, the SWCNT CMOS inverter circuits demonstrate a gain of 6.76 and relatively good dynamic operation at a supply voltage of 5.0 V.     

Electrostatic nanolithography in polymers using atomic force microscopy

The past decade has witnessed an explosion of techniques used to pattern polymers on the nano (1-100 nm) and submicrometre (100-1,000 nm) scale, driven by the extensive versatility of polymers for diverse applications, such as molecular electronics, data storage, optoelectronics, displays, sacrificial templates and all forms of sensors. Conceptually, most of the patterning techniques, including microcontact printing (soft lithography), photolithography, electron-beam lithography, block-copolymer templating and dip-pen lithography, are based on the spatially selective removal or formation/deposition of polymer. Here, we demonstrate an alternative and novel lithography technique--electrostatic nanolithography using atomic force microscopy--that generates features by mass transport of polymer within an initially uniform, planar film without chemical crosslinking, substantial polymer degradation or ablation. The combination of localized softening of attolitres (10(2)-10(5) nm3) of polymer by Joule heating, extremely non-uniform electric field gradients to polarize and manipulate the soften polymer, and single-step process methodology using conventional atomic force microscopy (AFM) equipment, establishes a new paradigm for polymer nanolithography, allowing rapid (of the order of milliseconds) creation of raised (or depressed) features without external heating of a polymer film or AFM tip-film contact.     

Capillarity Guided Patterning of Microliquids

Soft lithography and other techniques have been developed to investigate biological and chemical phenomena as an alternative to photolithography‐based patterning methods that have compatibility problems. Here, a simple approach for nonlithographic patterning of liquids and gels inside microchannels is described. Using a design that incorporates strategically placed microstructures inside the channel, microliquids or gels can be spontaneously trapped and patterned when the channel is drained. The ability to form microscale patterns inside microfluidic channels using simple fluid drain motion offers many advantages. This method is geometrically analyzed based on hydrodynamics and verified with simulation and experiments. Various materials (i.e., water, hydrogels, and other liquids) are successfully patterned with complex shapes that are isolated from each other. Multiple cell types are patterned within the gels. Capillarity guided patterning (CGP) is fast, simple, and robust. It is not limited by pattern shape, size, cell type, and material. In a simple three‐step process, a 3D cancer model that mimics cell–cell and cell–extracellular matrix interactions is engineered. The simplicity and robustness of the CGP will be attractive for developing novel in vitro models of organ‐on‐a‐chip and other biological experimental platforms amenable to long‐term observation of dynamic events using advanced imaging and analytical techniques.     

Full-wafer fabrication by nanostencil lithography of micro/nanomechanical mass sensors monolithically integrated with CMOS

Wafer-scale nanostencil lithography (nSL) is used to define several types of silicon mechanical resonators, whose dimensions range from 20?μm down to 200?nm, monolithically integrated with CMOS circuits. We demonstrate the simultaneous patterning by nSL of ～2000 nanodevices per wafer by post-processing standard CMOS substrates using one single metal evaporation, pattern transfer to silicon and subsequent etch of the sacrificial layer. Resonance frequencies in the MHz range were measured in air and vacuum. As proof-of-concept towards an application as high performance sensors, CMOS integrated nano/micromechanical resonators are successfully implemented as ultra-sensitive areal mass sensors. These devices demonstrate the ability to monitor the deposition of gold layers whose average thickness is smaller than a monolayer. Their areal mass sensitivity is in the range of 10(-11)?g?cm(-2)?Hz(-1), and their thickness resolution corresponds to approximately a thousandth of a monolayer.     

Regular Aligned 1D Single‐Crystalline Supramolecular Arrays for Photodetectors

Solution‐processed semiconductor single‐crystal patterns possess unique advantages of large scale and low cost, leading to potential applications toward high‐performance optoelectronic devices. To integrate organic semiconductor micro/nanostructures into devices, various patterning techniques have been developed. However, previous patterning techniques suffer from trade‐offs between precision, scalability, crystallinity, and orientation. Herein, a patterning method is reported based on an asymmetric‐wettability micropillar‐structured template. Large‐scale 1D single‐crystalline supramolecular arrays with strict alignment, pure crystallographic orientation, and precise position can be obtained. The wettability difference between tops and sidewalls of micropillars gives rise to the confinement of organic solutions in discrete capillary tubes followed by dewetting and formation of capillary trailing. The capillary trailing enables unidirectional dewetting, regulated mass transport, and confined crystal growth. Owing to the high crystallinity and pure crystallographic orientation with Pt atomic chains parallel to the substrate, the photodetectors based on the 1D arrays exhibit improved responsivity. The work not only provides fundamental understanding on the patterning and crystallization of supramolecular structures but also develops a large‐scale assembly technique for patterning single‐crystalline micro/nanostructures.     

Palladium‐Decorated Silicon Nanomesh Fabricated by Nanosphere Lithography for High Performance,Room Temperature Hydrogen Sensing

A hydrogen (H₂) gas sensor based on a silicon (Si) nanomesh structure decorated with palladium (Pd) nanoparticles is fabricated via polystyrene nanosphere lithography and top‐down fabrication processes. The gas sensor shows dramatically improved H₂ gas sensitivity compared with an Si thin film sensor without nanopatterns. Furthermore, a buffered oxide etchant treatment of the Si nanomesh structure results in an additional performance improvement. The final sensor device shows fast H₂ response and high selectivity to H₂ gas among other gases. The sensing performance is stable and shows repeatable responses in both dry and high humidity ambient environments. The sensor also shows high stability without noticeable performance degradation after one month. This approach allows the facile fabrication of high performance H₂ sensors via a cost‐effective, complementary metal–oxide–semiconductor (CMOS) compatible, and scalable nanopatterning method.     

Ordered arrays of <100>-oriented silicon nanorods by CMOS-compatible block copolymer lithography

Dense, ordered arrays of <100>-oriented Si nanorods with uniform aspect ratios up to 5:1 and a uniform diameter of 15 nm were fabricated by block copolymer lithography based on the inverse of the traditional cylindrical hole strategy and reactive ion etching. The reported approach combines control over diameter, orientation, and position of the nanorods and compatibility with complementary metal oxide semiconductor (CMOS) technology because no nonvolatile metals generating deep levels in silicon, such as gold or iron, are involved. The Si nanorod arrays exhibit the same degree of order as the block copolymer templates.     

Fabrication of high-resolution large-area patterns using EUV interference lithography in a scan-exposure mode

Limited beam spot size is a major limitation of interference lithography. This limits the area of patterning and reduces the pattern homogeneity. We describe a scanning exposure technique to circumvent this problem. We show the generation of uniform and seamless gratings with half-pitches down to 35 nm over an area of several mm(2) using EUV interference lithography. The presented technique offers a fast and cost-effective method of fabricating one- and two-dimensional periodic nanostructures with improved uniformity and increased patterning area.     

A complete fabrication route for atomic-scale, donor-based devices in single-crystal germanium

Despite the rapidly growing interest in Ge for ultrascaled classical transistors and innovative quantum devices, the field of Ge nanoelectronics is still in its infancy. One major hurdle has been electron confinement since fast dopant diffusion occurs when traditional Si CMOS fabrication processes are applied to Ge. We demonstrate a complete fabrication route for atomic-scale, donor-based devices in single-crystal Ge using a combination of scanning tunneling microscope lithography and high-quality crystal growth. The cornerstone of this fabrication process is an innovative lithographic procedure based on direct laser patterning of the semiconductor surface, allowing the gap between atomic-scale STM-patterned structures and the outside world to be bridged. Using this fabrication process, we show electron confinement in a 5 nm wide phosphorus-doped nanowire in single-crystal Ge. At cryogenic temperatures, Ohmic behavior is observed and a low planar resistivity of 8.3 kΩ/□ is measured.     

Powder‐Based Ceramic Meso‐ and Microscale Fabrication Processes

Processing techniques are reviewed that allow the introduction of ceramic components made from powders into microelectromechanical systems (MEMS). Ceramics have several advantages over other materials also in microsystems, e.g., heat resistance, hardness, corrosion resistivity, or functional properties. The range of available materials in microfabrication technology is being increased beyond those deposited by thin‐film technology. Top–down approaches like mechanical and laser‐based direct writing processes, ink‐jet printing, microextrusion, and lithography‐based methods are presented. They are complemented by some more fundamental work in the field of bottom–up synthesis of micro‐ and nanoscaled ceramic materials.     

Graphite patterning in a controlled gas environment

Although a number of methods using scanning probe lithography to pattern graphene have already been introduced, the fabrication of real devices still faces limitations. We report graphite patterning using scanning probe lithography with control of the gas environment. Patterning processes using scanning probe lithography of graphite or graphene are normally performed in air because water molecules forming the meniscus between the tip and the sample mediate the etching reaction. This water meniscus, however, may prevent uniform patterning due to its strong surface tension or large contact angle on surfaces. To investigate this side effect of water, our experiment was performed in a chamber where the gas environment was controlled with methyl alcohol, oxygen or isopropanol gases. We found that methyl alcohol facilitates graphite etching, and a line width as narrow as 3?nm was achieved as methyl alcohol also contains an oxygen atom which gives rise to the required oxidation. Due to its low surface tension and highly adsorptive behavior, methyl alcohol has advantages for a narrow line width and high speed etching conditions.