High‐efficiency p‐i‐n organic light‐emitting diodes with long lifetime

Abstract— High‐performance organic light‐emitting diodes (OLEDs) are promoting future applications of solid‐state lighting and flat‐panel displays. We demonstrate here that the performance demands for OLEDs are met by the PIN (p‐doped hole‐transport layer/intrinsically conductive emission layer/n‐doped electron‐transport layer) approach. This approach enables high current efficiency, low driving voltage, as well as long OLED lifetimes. Data on very‐high‐efficiency diodes (power efficiencies exceeding 70 lm/W) incorporating a double‐emission layer, comprised of two bipolar layers doped with tris(phenylpyridine)iridium [Ir(ppy)₃], into the PIN architecture are shown. Lifetimes of more than 220,000 hours at a brightness of 150 cd/m² are reported for a red PIN diode. The PIN approach further allows the integration of highly efficient top‐emitting diodes on a wide range of substrates. This is an important factor, especially for display applications where the compatibility of PIN OLEDs with various kinds of substrates is a key advantage. The PIN concept is very compatible with different backplanes, including passive‐matrix substrates as well as active‐matrix substrates on low‐temperature polysilicon (LTPS) or, in particular, amorphous silicon (a‐Si).     

PIN‐OLEDs for active‐matrix‐display use

Abstract— Novaled's PIN‐OLED® technology allows for highly efficient, temperature stable, and long‐lived OLEDs suited for a variety of display applications. This paper delivers an overview about Novaled's state of the art, including top‐ and bottom‐emitting structures. It is discussed how PIN‐OLEDs give rise to an increased manufacturing yield. The main focus of this paper is the development of white OLEDs for display use. When the RGBW color‐filter approach is used in combination with white OLEDs, the resulting full‐color OLED display is able to deliver high color quality and remain highly power efficient. For such a case, the manufacturing infrastructure of OLEDs for lighting can be used. We use tandem architectures, bottom‐ and top‐emission architectures, and developed specific high‐temperature stable OLED stacks. The importance of matching color coordinates of the white OLED and the targeted display white color point is of outstanding importance. Results have mainly been achieved under the German‐funded project CARO and the European‐funded project AMAZOLED.     

Analyzing and tuning emission characteristics of top‐emitting organic light‐emitting devices

Abstract— Top‐emitting organic light‐emitting devices (OLEDs) have several technical merits for application in active‐matrix OLED displays. Generally, stronger microcavity effects inherent with top‐emitting OLEDs, however, complicate the optimization of device efficiency and other viewing characteristics, such as color and viewing‐angle characteristics. In this paper, using the rigorous classical electromagnetic model based on oscillating electric dipoles embedded in layered structures, the emission characteristics of top‐emitting OLEDs as a function of device structures will be analyzed. From comprehensive analysis, trends in the dependence of ewmission characteristics on device structures were extracted, and, accordingly, a general methodology for optimizing viewing characteristics of top‐emitting OLEDs for display applications will be suggested. The effectiveness of the analysis and the methodology was confirmed by experimental results.     

White stacked OLED with 38 lm/W and 100,000‐hour lifetime at 1000 cd/m2 for display and lighting applications

Abstract— The three critical parameters in determining the commercial success of organic light‐emitting diodes (OLEDs), both in display and lighting applications, are power efficiency, lifetime, and price competitiveness. PIN technology is widely considered as the preferred way to maximize power efficiency and lifetime. Here, a high‐efficiency and long‐lifetime white‐light‐emitting diode, which has been realized by stacking a blue‐fluorescent emission unit together with green‐ and red‐phosphorescent emission units, is reported. Proprietary materials have been used in transport layers of each emission unit, which significantly improves the power efficiency and stability. The power efficiency at 1000 cd/m² is 38 lm/W with CIE color coordinates of (0.43, 0.44) and a color‐rendering index (CRI) of 90. An extrapolated lifetime at an initial luminance of 1000 cd/m² is above 100,000 hours, which fulfils the specifications for most applications. The emission color can also be easily tuned towards the equal‐energy white for display applications by selecting emitting materials and varying the transport‐layer cavities.     

Solution‐processable double‐layered ionic p‐i‐n organic light‐emitting diodes

Abstract— Solution‐processed double‐layered ionic p‐i‐n organic light‐emitting diodes (OLEDs), comprised of an emitting material layer doped with an organometallic green phosphor and a photo‐cross‐linked hole‐transporting layer doped with photo‐initiator is reported. The fabricated OLEDs were annealed using simultaneous thermal and electrical treatments to form a double‐layered ionic p‐i‐n structure. As a result, an annealed double‐layered OLED with a peak brightness over 20,000 cd/m² (20 V, 390 mA/cm²) and a peak efficiency of 15 cd/A (6 V, 210 cd/m²) was achieved.     

PIN OLEDs — Improved structures and materials to enhance device lifetime

Abstract— Currently, three issues are identified that decide upon the commercial success of organic light‐emitting diodes (OLEDs), both in display and lighting applications: power efficiency, lifetime, and price competitiveness. PIN OLEDs are widely seen as the preferred way to maximize power efficiency. Here, it is reported that this concept also delivers the world longest lifetimes. For a highly efficient deep‐red PIN OLED, a half‐lifetime of 25,000 hours for a starting brightness of 10,000 cd/m² and a minimal voltage increase over lifetime is reported. This value corresponds to more than 1 × 10⁶ hours at 1000 cd/m² using an exponent of n = 1.7, which was measured by driving the OLEDs at different starting luminances. Because there is no initial luminance drop, these PIN OLEDs also exhibit a very high 80% lifetime (>300,000 hours at 1000 cd/m²). New record lifetime values for blue and green will be reported as well. Additionally, further topics that have impact on the production yield and cost such as the newly developed air‐stable organic n‐doping material NDN‐26 and top‐emitting structures will be discussed.     

Active‐matrix technology for high‐efficiency OLED displays

Organic light‐emitting device (OLED) technology has recently been shown to demonstrate excellent performance and cost characteristics for use in numerous flat‐panel‐display (FPD) applications. Universal Display Corp. (UDC), together with its academic partners at Princeton University and the University of Southern California, are developing high‐efficiency electrophosphorescent OLEDs, based on triplet emission. These material systems show good lifetimes, and are well suited for the commercialization of low‐power‐consumption full‐color active‐matrix OLED displays. Their very high conversion efficiencies may even allow them to be driven by amorphous‐silicon backplanes, and in this paper we consider design guidelines for an amorphous‐silicon pixel to minimize display non‐uniformities due to threshold voltage variations.     

Active‐matrix organic light‐emitting displays employing two thin‐film‐transistor a‐Si:H pixels on flexible stainless‐steel foil

Abstract— An active‐matrix organic light‐emitting diode (AMOLED) display driven by hydrogenated amorphous‐silicon thin‐film transistors (a‐Si:H TFTs) on flexible, stainless‐steel foil was demonstrated. The 2‐TFT voltage‐programmed pixel circuits were fabricated using a standard a‐Si:H process at maximum temperature of 280°C in a bottom‐gate staggered source‐drain geometry. The 70‐ppi monochrome display consists of (48 × 4) × 48 subpixels of 92 ×369 μm each, with an aperture ratio of 48%. The a‐Si:H TFT pixel circuits drive top‐emitting green electrophosphorescent OLEDs to a peak luminance of 2000 cd/m².     

A 5.8‐in. phosphorescent color AMOLED display fabricated by ink‐jet printing on plastic substrate

Abstract— A flexible phosphorescent color active‐matrix organic light‐emitting‐diode (AMOLED) display on a plastic substrate has been fabricated. Phosphorescent polymer materials are used for the emitting layer, which is patterned using ink‐jet printing. A mixed solvent system with a high‐viscosity solvent is used for ink formulation to obtain jetting reliability. The effects of evaporation and the baking condition on the film profile and OLED performances were investigated. An organic thin‐film‐transistor (OTFT) backplane, fabricated using pentacene, is used to drive the OLEDs. The OTFT exhibited a current on/off ratio of 10⁶ and a mobility of 0.1 cm²/V‐sec. Color moving images were successfully shown on the fabricated display.     

A novel electron‐transport material for organic light‐emitting devices

Abstract— A nanocrystalline electron‐transport material [ET68] was introduced into organic light‐emitting devices (OLEDs). By integrating a p‐doped transport system and phosphorescent emitters, a very bright and stable device could be obtained. Furthermore, 40% saving in power consumption can be achieved when the efficient pixels with ET68 were applied to AMOLEDs.     

Passive‐matrix polymer light‐emitting displays

Abstract— Organic light‐emitting device research focuses on the use of small‐molecule and polymer materials to make organic electroluminescent displays, with both passive‐ and active‐matrix technologies. This paper will focus on the characteristics of red, green, and blue electroluminescent polymers suitable for fabricating monochrome and full‐color passive‐matrix displays. The stability of polymer OLEDs, and the use of ink‐jet printing for direct high‐resolution patterning of the light‐emitting polymers will also be discussed. It will be shown that the performance of light‐emitting polymers is at the brink of being acceptable for practical applications.     

Tuning of electrical and optical properties of organic LEDs using combinatorial device fabrication

The capabilities of combinatorial methods are presented in order to get a detailed understanding of the electrical and optical properties of organic light‐emitting devices (OLEDs), to optimize their performance, and to provide reliable data for device modeling. We show results on multilayer OLEDs ranging from the conventional copper‐phthalocyanine (CuPc)/N,N′di‐(naphtalene‐1‐yl)‐N,N′‐diphenyl‐benzidine (NPB) and tris‐(8‐hydroxy‐quinolinato)aluminum (Alq) tri‐layer device to double‐doped deep‐red‐emitting OLEDs.     

High‐mobility self‐aligned top‐gate oxide TFT for high‐resolution AM‐OLED

High‐mobility and highly reliable self‐aligned top‐gate oxide thin‐film transistor (TFTs) were developed using the aluminum reaction method. Al diffusion to the oxide semiconductor and homogenization of the oxygen concentration in the depth direction after annealing were confirmed by laser‐assisted atom probe tomography. The high mobility of the top‐gate TFT with amorphous indium tin zinc oxide channel was demonstrated to be 32 cm²/V s. A 9.9‐in. diagonal qHD active‐matrix organic light‐emitting diode (AM‐OLED) display was fabricated using a five‐mask backplane process to demonstrate an applicable solution for large‐sized and high‐resolution AM‐OLEDs.     

Energy‐recycling high‐contrast organic light‐emitting devices

Abstract— It is reported that by integrating OLEDs with solar cells, ambient‐light reflection as low as 1.4% (even superior to that achieved with polarizers) can be achieved without compromising the EL efficiency for high‐contrast display applications. Furthermore, in such a configuration, the photon energies of both the incident ambient light and the portion of OLED emission not getting outside of the device can be recycled into useful electrical power via the photovoltaic action, instead of being wasted as in other reported contrast‐enhancement techniques. These features, we believe, shall make this present technique attractive for high‐contrast display applications and portable/mobile electronics that are highly power‐aware.     

Composite silver electrode for double‐sided‐emitting stacked organic light‐emitting diode

Abstract— A reflective composite silver electrode is proposed and characterized as the middle electrode of a stacked organic light‐emitting diode (OLED) with double‐sided light emission. The proposed electrode is composed of a thermally evaporated stack of LiF (1 nm)/Al (3 nm)/Ag (70 nm) layers. The LiF/Al and the plasma‐treated Ag of the electrode function well as the respective cathode and anode of the bottom‐ and top‐emitting stacked OLEDs, with both being of the non‐inverted type. Power efficiencies of 10.3 and 12.1 lm/W at 100 cd/m² have been measured for bottom‐ and top‐emitting OLEDs, respectively, using dye doping. The stacked OLED having this bipolar middle electrode can be constructed as a two‐terminal‐only device, allowing for simpler driving schemes in double‐side‐emitting passive‐/active‐matrix OLED displays.     

Luminous‐efficiency improvement of solar‐cell‐integrated high‐contrast organic light‐emitting diode by applying distributed Bragg reflector

Abstract— Solar‐cell‐integrated organic light‐emitting diodes (OLEDs) were fabricated with both high contrast ratio and energy‐recycling ability. However, the luminous efficiency of the integrated devices is reduced to 50% of that of conventional top‐emitting OLEDs. A novel structure to recover the luminous efficiency from 50% to near 85% by applying a distributed Bragg reflector (DBR) made of 20 layers of GaN/AlN was demonstrated. It saves about 40% of the electric power than that of a device without a DBR. The contrast ratio remains high compared to that of conventional OLEDs. In this paper, simulations were conducted first to prove our models and assumptions. Then, two types of thin‐film solar cells — CdTe and CIGS solar cells — were used. They had different contrast ratios as well as viewing‐angle properties. Finally, the emission spectrum was calculated to be 11 nm FWHM, which is narrower than that for the emission spectrum of a typical microcavity OLED and has the advantage of having saturated colors.     

Highly transparent and conductive CdO thin films as anodes for organic light‐emitting diodes: Film microstructure and morphology effects on performance

Abstract— Highly conductive and transparent CdO thin films have been grown on glass and on single‐crystal MgO(100) by MOCVD at 400°C and were used as transparent anodes for fabricating small‐molecule organic‐light emitting diodes (OLEDs). Device response and applications potential have been investigated and compared with those of control devices based on commercial ITO anodes. It is demonstrated that highly conductive CdO thin films of proper morphology can efficiently inject holes into such devices, rendering them promising anode materials for OLEDs. Importantly, this work also suggests the feasibility of employing other CdO‐based TCOs as anodes for high‐performance OLEDs.     

Active‐matrix organic light‐emitting diode displays with indium gallium zinc oxide thin‐film transistors and normal,inverted, and transparent organic light‐emitting diodes

Abstract— Active‐matrix organic light‐emitting diode (AMOLED) displays have gained wide attention and are expected to dominate the flat‐panel‐display industry in the near future. However, organic light‐emitting devices have stringent demands on the driving transistors due to their current‐driving characteristics. In recent years, the oxide‐semiconductor‐based thin‐film transistors (oxide TFTs) have also been widely investigated due to their various benefits. In this paper, the development and performance of oxide TFTs will be discussed. Specifically, effects of back‐channel interface conditions on these devices will be investigated. The performance and bias stress stability of the oxide TFTs were improved by inserting a SiO^x protection layer and an N²O plasma treatment on the back‐channel interface. On the other hand, considering the n‐type nature of oxide TFTs, 2.4‐in. AMOLED displays with oxide TFTs and both normal and inverted OLEDs were developed and their reliability was studied. Results of the checkerboard stimuli tests show that the inverted OLEDs indeed have some advantages due to their suitable driving schemes. In addition, a novel 2.4‐in. transparent AMOLED display with a high transparency of 45% and high resolution of 166 ppi was also demonstrated using all the transparent or semi‐transparent materials, based on oxide‐TFT technologies.     

Threshold‐voltage‐compensation methods for AMOLED pixel and analog buffer circuits

Abstract— New pixel‐circuit designs for active‐matrix organic light‐emitting diodes (AMOLEDs) and a new analog buffer circuit for the integrated data‐driver circuit of active‐matrix liquid‐crystal displays (AMLCDs) and AMOLEDs, based on low‐temperature polycrystalline‐silicon thin‐film transistors (LTPS‐TFTs), were proposed and verified by SPICE simulation and measured results. Threshold‐voltage‐compensation pixel circuits consisting of LTPS‐TFTs, an additional control signal line, and a storage capacitor were used to enhance display‐image uniformity. A diode‐connected concept is used to calibrate the threshold‐voltage variation of the driving TFT in an AMOLED pixel circuit. An active load is added and a calibration operation is applied to study the influences on the analog buffer circuit. The proposed circuits are shown to be capable of minimizing the variation from the device characteristics through the simulation and measured results.     

Current programming pixel circuit and data‐driver design for active‐matrix organic light‐emitting diodes

Abstract— We propose a new pixel design for active‐matrix organic light‐emitting diodes (AMOLEDs) employing five polycrystalline thin‐film transistors (poly‐Si TFTs) and one capacitor, which decreases the data current considerably in order to reduce the charging time compared with that of conventional current‐mirror structures. Also, the new pixel design compensates the threshold‐voltage degradation of OLEDs caused by continuous operation and the non‐uniformity of poly‐Si TFTs due to excimer‐laser annealing. The proposed pixel circuit was verified by SPICE simulation, based on measured TFT and OLED characteristics. We also propose current‐data‐driver circuitry that reduces the number of shift‐register signals for addressing the current data driver by one‐half.