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1.
The results obtained from the sintering of Al2O3–50TiC (in weight percent) composite in the temperature range from 1650° to 1800°C with addition of Y2O3 are presented. Densification is accelerated by the formation of liquid at temperatures above 1750°C, and 99% of theoretical density can be achieved by vacuum sintering at 1800°C for 15 min. The liquid presented at the sintering temperature is crystallized to YAG (Y3Al5O12) during cooling.  相似文献   

2.
The effects of sintering temperature and cooling rate on the magnetic and crystallographic properties of lithium ferrite were studied. The magnetic moments and lattice parameters increased with increasing sintering temperature; these increases result from correlated oxygen and lithium oxide losses. Either annealing at lower temperatures or slow cooling under O2 causes reoxidation of the Fe2+ formed at higher temperatures with attendant decreases in moment and lattice parameter and gradual precipitation of α-Fe2O3 as a second phase. The products formed on rapid cooling are equivalent to solid solutions of spinel lithium ferrite with Fe3O4, and those formed on slow cooling, to solid solutions of lithium ferrite and γ-Fe2O3 with precipitation of α-Fe2O3. Lithium losses and α-Fe2O3 precipitate amounts are calculated. The magnetic moment of stoichiometric lithium ferrite at 25°C is 3736±20 G; the lattice parameter at 28°C is 8.3296±0.0005 Å.  相似文献   

3.
The influence of magnesium, phosphorus, and iron additions on the low-temperature (≤1000°C) sintering of nanocrystalline α-Al2O3 derived from α-AlOOH has been investigated. α-AlOOH powder with a surface area of 50 m2/g yielded α-Al2O3 products with surface areas of 150 and 80 m2/g after dehydration at temperatures of 400° and 500°C, respectively. However, these products were prone to sintering at >600°C, and the surface area was reduced to 15 m2/g within only 1 h at 1000°C. Although magnesium and iron doping had no discernible effect, the presence of phosphorus inhibited sintering and surface-area loss significantly. Samples doped with 1%–2% phosphorus had surface areas of >31 m2/g after 100 h at 1000°C. Atomic force microscopy studies of α-Al2O3 pseudomorphs derived from α-AlOOH single crystals also demonstrated the inhibiting effect of phosphorus, as the rate of crack elimination was reduced on phosphorus-modified surfaces. The effects of the dopants are discussed with regard to their potential influence on α-Al2O3 surface energy and diffusivity.  相似文献   

4.
Inhibition of cubic-rhombohedral phase transformation and low-temperature sintering at 1000°C were achieved for 10-mol%-Sc2O3-doped cubic-ZrO2 by the presence of 1 mol% Bi2O3. The powders of 1-mol%-Bi2O3–10-mol%-Sc2O3-doped ZrO2 were prepared using a hydrolysis and homogeneous precipitation technique. No trace of rhombohedral-ZrO2 phase could be detected, even after sintering at 1000°–1400°C. The average grain size of the ZrO2 sintered at 1200°C was >2 μm because of grain growth in the presence of Bi3+. Cubic, stabilized Bi-Sc-doped ZrO2 sintered at 1200°C had sufficient conductivity at 1000°C (0.33 S/cm) to be used as an electrolyte for a solid-oxide fuel cell (SOFC) and at 800°C (0.12 S/cm) for an intermediate-temperature SOFC.  相似文献   

5.
A high-temperature liquid phase (rather than a low-temperature liquid phase at 690°C as reported recently) has been demonstrated to form at 860°C on heating and to solidify at 840°C on cooling in PbFe2/3O3. This liquid phase not only promotes densification, but also induces the formation of rounded PbFe2/3W1/3O3 grains during sintering at 870°C. Through slow cooling at a rate of 25°C/h after sintering, platelike grains, designated G phase, are found to form in a thin surface layer of specimens. This formation of platelike G phase is considered to be related to the solidification and recrystallization of the liquid phase exuded from the interior. The amount of the G phase on the surfaces decreases with the increase of cooling rates, indicating that fast cooling will lead the liquid phase to be solidified in the bulk of specimens. These results reveal that the microstructure of PbFe2/3W1/3O3 is greatly affected by the high-temperature liquid phase; additionally, the slow cooling treatment seems to be a direct and effective method for removing the residual liquid phase from PbFe2/3W1/3O3.  相似文献   

6.
Lithium borate (Li2B4O7) and sodium borate (Na2B4O7) mineralize spinel formation from stoichiometric MgO and Al2O3 between 1000° and 1100°C. Mineralization with both compounds is shown to be mediated by B-containing liquids which form glass on cooling. However, the liquid compositions depend on the type of mineralizer and temperature, suggesting that templated grain growth or dissolution–precipitation mechanisms are operating, one dominating over the other under certain conditions. Na2B4O7-mineralized compositions show predominantly templated grain growth at 1000°C, which changes to dissolution–precipitation at 1100°C, whereas Li2B4O7-mineralized compositions show dissolution–precipitation from 1000°C. Li2B4O7 is a stronger mineralizer as spinel formation is complete with 3 wt% Li2B4O7 at 1000°C and with ≥1.5 wt% addition at 1100°C, whereas Na2B4O7-mineralized compositions are found to retain some unreacted corundum even at 1100°C.  相似文献   

7.
Mixtures of La2O3 and Al2O3 with various La contents were prepared by co-precipitation from La(NO3)3 and Al(NO3)3 solutions and calcined at 800° to 1400°C. The addition of small amounts of La2O3 (2 to 10 mol%) to Al2O3 gives rise to the formation of lanthanum β-alumina (La 2 O3·11–14Al2O3) upon heating to above 1000°C and retards the transformation of γ-Al2O3 to α-Al2O3 and associated sintering.  相似文献   

8.
Sintering of Zinc Oxide Doped with Antimony Oxide and Bismuth Oxide   总被引:1,自引:0,他引:1  
The phase change, densification, and microstructure development of ZnO doped with both Bi2O3 and Sb2O3 are studied to better understand the sintering behavior of ZnO varistors. The densification behavior is related to the formation of pyrochlore and liquid phases; the densification is retarded by the former and promoted by the latter. The pyrochlore phase, whose composition is Bi3/2ZnSb3/2O7, appears below 700°C. The formation temperature of the liquid phase depends on the Sb/Bi ratio: about 750°C for Sb/Bi < 1 by the eutectic melting in the system ZnO—Bi2O3, and about 1000°C for Sb/Bi > 1 by the reaction of the pyrochlore phase with ZnO. Hence, the densification rate is determined virtually by the Sb/Bi ratio and not by the total amount of additives. The microstructure depends on the sintering temperature. Sintering at 1000°C forms intragrain pyrochlore particles in ZnO grains as well as intergranular layers, but the intragrain particles disappear at 1200°C by the increased amount of liquid phase, which enhances the mobility of the solid second phase.  相似文献   

9.
The synthesis of dense sintered sialon with external additives selected from the system Y2O3–AIN–SiO2 is reported. The highest density (3.21 g/cm3) was achieved at 1750°C at 90 min of sintering with 5 wt% additive. The degree of sialon substitution increased with the amount of liquid; the YSiO2N crystalline phase formed concurrently. Strength degradation occurred above 1000°C. The fracture toughness of the material sintered with a lower amount of sintering aid remained relatively unchanged to 1200°C. The material with more additive exhibited decreased toughness above 1000°C.  相似文献   

10.
Picrochromite (MgCr2O4) crystallizes at 480° to 530°C from an amorphous material prepared by the hydrazine method. The MgCr2O4 powders were characterized for particle size and surface area. Individual particles tend toward a hexagonal morphology above 1000°C. Dense MgCr2O4 ceramics (99.5% of theoretical) with an average grain size of 2 μm have been fabricated by spark plasma sintering for 5 min at 1400°C and 30 MPa. Their fracture toughness and bending strength are 3.7 MPa·m1/2 and 310 MPa, respectively.  相似文献   

11.
The sintering behavior and electrical conductivity of high-purity 8-mol% Y2O3-stabilized ZrO2 (8YSZ) with Al2O3 additions were investigated. The addition of 1 wt% AI2O3 to 8YSZ provided dense, sintered samples with 9.1% relative density at 1400°C without a holding time. Addition of 1 wt% SiO2 enhanced the sinterability of 8YSZ. Na2O addition of 0.1 wt% remarkably lowered it. Electrical conductivity at 1000°C in air increased slightly with increased Ai2O3 content up to 1 wt% and then monotonously decreased. 8YSZ with 1 wt% AI2O3 showed the maximum conductivity of 0.16 S/cm at 1000°C.  相似文献   

12.
The influence of Nd2O3 doping on the reaction process and sintering behavior of BaCeO3 is investigated. Formation of BaCeO3 is initiated at 800°C and completed at 1000°C. When Nd2O3 is added to the starting materials, the formation of BaCe1–xNdxO3–δ is delayed and the temperature for complete reaction is increased to 1100°C. Only a BaCe1-xNdxO3–δ solid solution with an orthorhombic crystal structure is present in the specimens for x ≤ 0.1. A secondary phase rich in Ce and Nd is formed within grains and at grain boundaries, when the Nd2O3 content is greater than the solubility limit (x ≥ 0.2). Pure BaCeO3 is difficult to sinter, even at 1500°C, and only a porous microstructure could be obtained. However, doping BaCeO3 with Nd2O3 markedly enhances its sinterability. The enhancement of the sinterability of Nd2O3-doped specimens at x ≤ 0.1 is attributed to the increase in the concentration of oxygen ion vacancies, which increases the diffusion rate. At x ≥ 0.2, the grain size is abnormally coarsened, which is caused by the formation of a liquid phase. While this liquid phase accelerates sintering, its beneficial effect on densification is counteracted by the segregation of the secondary grain-boundary phase which inhibits sintering.  相似文献   

13.
A type of new low sintering temperature ceramic, Li2TiO3 ceramic, has been found. Although it is difficult for the Li2TiO3 compound to be sintered compactly at temperatures above 1000°C for the volatilization of Li2O, dense Li2TiO3 ceramics were obtained by conventional solid-state reaction method at the sintering temperature of 900°C with the addition of ZnO–B2O3 frit. The sintering behavior and microwave dielectric properties of Li2TiO3 ceramics with less ZnO–B2O3 frit (≤3.0 wt%) doping were investigated. The addition of ZnO–B2O3 frit can lower the sintering temperature of the Li2TiO3 ceramics, but it does not apparently degrade the microwave dielectric properties of the Li2TiO3 ceramics. Typically, the good microwave dielectric properties of ɛr=23.06, Q × f =32 275 GHz, τf = 35.79 ppm/°C were obtained for 2.5 wt% ZnO–B2O3 frit-doped Li2TiO3 ceramics sintered at 900°C for 2 h. The porosity was 0.08%. The Li2TiO3 ceramic system may be a promising candidate for low-temperature cofired ceramics applications.  相似文献   

14.
Powder compacts consisting of Al, Al2O3, and ZrO2 were heated by microwave radiation. Tracing the phase evolution during reaction bonding revealed the reaction mechanism. In the case of conventional heating, the compacts expanded slightly at temperatures of <700°C due to Al surface oxidation and expanded sharply at temperatures greater than 700°C as oxidation proceeded from the surface to the interior. Then, the compacts shrank at 1550°C due to sintering. For the case of microwave heating, the compacts expanded at temperatures of <550°C due to the formation of Al3Zr. This Al3Zr formation was caused by the preferential heating of ZrO2 relative to Al and Al2O3 by microwave radiation. Then, Al3Zr was oxidized to form Al2O3 and ZrO2 at temperatures of >1000°C. Finally, the compacts shrank at 1550°C due to sintering, similarly to conventional sintering.  相似文献   

15.
The electrical properties of a series of CaCu3Ti4O12 ceramics prepared by the mixed oxide route and sintered at 1115°C in air for 1–24 h to produce different ceramic microstructures have been studied by Impedance Spectroscopy. As-fired ceramics are electrically heterogeneous, consisting of semiconducting grains and insulating grain boundaries, and can be modelled to a first approximation on an equivalent circuit based on two parallel RC elements connected in series. The grain boundary resistance and capacitance values vary as a function of sintering time and correlate with the ceramic microstructure based on the brickwork layer model for electroceramics. The large range of apparent high permittivity values for CaCu3Ti4O12 ceramics is therefore attributed to variations in ceramic microstructure. The grain-boundary resistance decreases by three to four orders of magnitude after heat treatment in N2 at 800°–1000°C but can be recovered to the original value by heat treatment in O2 at 1000°C. The bulk resistivity decreases from ∼80 to 30 Ω·cm with increasing sintering time but is independent of heat treatment in N2 or O2 at 800°–1000°C. The origin of the bulk semiconductivity is discussed and appears to be related to partial decomposition of CaCu3Ti4O12 at the high sintering temperatures required to form dense ceramics, and not to oxygen loss.  相似文献   

16.
A low-temperature, single step, reactive sintering method for Pb(Mg1/3Nb2/3)O3 (PMN) and PMN–PbTiO3 (PMN–PT) processing was developed based on the coating of Mg(OH)2 on Nb2O5. This method simplified the processing of PMN and PMN–PT to a single step of heat-treatment and decreased the sintering temperature to 1000°C. It was found that the pyrochlore phase formation reaction at 500°C reduced the particle size to 130 nm. The overlap of the pyrochlor-perovskite phase transformation between 700° and 900°C and the densification process between 800° and 1000°C improved the sintering process. These two factors were the major reasons of the low temperature sintering.  相似文献   

17.
BaCu(B2O5) ceramics were synthesized and their microwave dielectric properties were investigated. BaCu(B2O5) phase was formed at 700°C and melted above 850°C. The BaCu(B2O5) ceramic sintered at 810°C had a dielectric constant (ɛr) of 7.4, a quality factor ( Q × f ) of 50 000 GHz and a temperature coefficient of resonance frequency (τf) of −32 ppm/°C. As the BaCu(B2O5) ceramic had a low melting temperature and good microwave dielectric properties, it can be used as a low-temperature sintering aid for microwave dielectric materials for low temperature co-fired ceramic application. When BaCu(B2O5) was added to the Ba(Zn1/3Nb2/3)O3 (BZN) ceramic, BZN ceramics were well sintered even at 850°C. BaCu(B2O5) existed as a liquid phase during the sintering and assisted the densification of the BZN ceramic. Good microwave dielectric properties of Q × f =16 000 GHz, ɛr=35, and τf=22.1 ppm/°C were obtained for the BZN+6.0 mol% BaCu(B2O5) ceramic sintered at 875°C for 2 h.  相似文献   

18.
We investigated the densification of undoped, nanocrystalline yttria (Y2O3) powder by spark plasma sintering (SPS) at sintering temperatures between 650°C and 1050°C at a heating rate of 10°C/min and an applied stress of 83 MPa. In spite of the low sinterability of the undoped Y2O3, a remarkable densification of the powder started at about 600°C, and a theoretical density of more than 97% was achieved at a sintering temperature of 850°C with a grain size of about 500 nm. The low temperature SPS is effective for fabricating dense Y2O3 polycrystals.  相似文献   

19.
Grain growth of ZnO during the liquid-phase sintering of binary ZnO–Bi2O3 ceramics has been studied for Bi2O3 contents from 3 to 12 wt% and sintering from 900° to 1400°C. The results are considered in combination with previously published studies of ZnO grain growth in the ZnO–Bi2O3 system. For the Bi2O3 contents of the present study, the rate of ZnO grain growth is found to decrease with increasing Bi2O3. Activation analysis, when combined with the results of similar analyses of the previous studies, reveals a change in the rate-controlling mechanism for ZnO grain growth. Following a low-Bi2O3-content region of nearly constant activation energy values of about 150 kJ/mol, further Bi2O3 additions cause an increase of the activation energy to about 270 kJ/mol. consistent with accepted models of liquid-phase sintering, it is concluded that the rate-controlling mechanism of ZnO grain growth during liquid-phase sintering in the presence of Bi2O3 changes from one of a phase-boundary reaction at low Bi2O3 levels to one of diffusion through the liquid phase at about the 5 to 6 wt% Bi2O3 level and above.  相似文献   

20.
Compressive properties of polycrystalline yttrium oxide (Y2O3) were studied by slow-strain-rate experiments (ε= 5.7 × 10–6 s−1) between room temperature and 1600°C. It was shown that Y2O3 fails in a brittle manner up to 1000°C, and at 1200°C and above plastic deformation becomes dominant. Plastic deformation of Y2O3 takes place exclusively by dislocation motion. Maximum stress, yield stress, and elastic modulus decrease with increasing temperature, although the decrease at temperatures above 1000°C is much more pronounced.  相似文献   

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