The Anomalous Optical Conductivity of Metallic La2?xSrxCuO4

The in-plane optical conductivity of three metallic La_2–x Sr _x CuO₄ single crystals with 0.10 x 0.15 has been studied between 30 and 295 K. Strong peaks in the far-infrared are observed, which cannot be explained by Drude-like models. Their similarity with peaks reported in Cu–O ladders with one-dimensional charge-ordering, their extremely low frequency, and their behavior with temperature allows us to conclude that those anomalous features are excitations of charge stripes in the Cu–O planes.     

Superconductivity in the tetragonal phase of La1.9Bi0.1CuO4+δ annealed under high oxygen pressure

We have investigated the relation between the crystal structure and superconductivity in La_1.9Bi_0.1CuO₄₊ , in which the phase separation observed in La₂CuO₄₊ is suppressed. A phase diagram in theT– plane is given for La_1.9Bi_0.1CuO₄₊ with excess oxygen. For very small values, the crystal structure is orthorhombic, and an orthorhombic-tetragonal phase transition occurs markedly at 0.03 in the measured temperature range between 13 and 293 K. Superconductivity is observed in the range of 0.04<<0.11. This is clear evidence thathigh-T _c superconductivity also appears in the tetragonal phase.     

Diaphyseal fractures treated by polylactide and hydroxyapatite pins. Experimental study in rat

Hydroxyapatite (HAp) coatings were deposited onto substrates of metal biomaterials (Ti, Ti6Al4V, and 316L stainless steel) by electrophoretic deposition (EPD). Only ultra-high surface area HAp powder, prepared by the metathesis method 10Ca(NO₃)₂ + 6(NH₄)₂HPO₄ + 8NH₄OH), could produce dense coatings when sintered at 875–1000°C. Single EPD coatings cracked during sintering owing to the 15–18% sintering shrinkage, but the HAp did not decompose. The use of dual coatings (coat, sinter, coat, sinter) resolved the cracking problem. Scanning electron microscopy/energy dispersive spectroscopy (SEM/EDS) inspection revealed that the second coating filled in the valleys in the cracks of the first coating. The interfacial shear strength of the dual coatings was found, by ASTM F1044-87, to be 12 MPa on a titanium substrate and 22 MPa on 316L stainless steel, comparing quite favorably with the 34 MPa benchmark (the shear strength of bovine cortical bone was found to be 34 MPa). Stainless steel gave the better result since -316L (20.5 m mK^-1) > -HAp (14 m mK^-1), resulting in residual compressive stresses in the coating, whereas -titanium (10.3 m mK^-1) < -HAp, resulting in residual tensile stresses in the coating. © 1999 Kluwer Academic Publishers     

Energy Scales in the High-Tc Superconductor YBa2Cu3O6+x

The optical conductivity sum rule is used to examine the evolution of the spectral weight N() in both the normal and superconducting states of optimally and underdoped YBa₂Cu₃O_6+x along the a axis. Differences in N() above and below T _c allow the strength of the superconducting condensate _s to be determined. In the optimally-doped material, _s is fully formed at energies comparable to the full superconducting gap maximum (0.1 eV), while in the underdoped material the energy scale for convergence is considerably higher (0.6 eV). This difference is discussed in terms of normal-state properties.     

Surface resistance of large-area Tl2Ba2CaCu2O8 thin films at microwave and millimeter wave frequencies measured by three noncavity techniques

The surface resistanceR _s of Tl₂Ba₂CaCu₂O₈ films fabricated on LaAlO₃ wafers up to 3 inches (7.6 cm) in diameter through a post-deposition anneal process was measured over the frequency range 5.55–94.1 GHz by the following techniques: 5.55 and 27.5 GHz high-temperature superconductor (HTS)-sapphire resonators, 10 GHz parallel plate resonator, and 94.1 GHz scanning confocal resonator.R _s was found to exhibit a quadratic dependence on frequencyf at 77 K:R _s f ^2.0±0.1. The highest-quality films yieldR _s =145±15 at 10 GHz and 77 K. Scanning confocal resonator mapping ofR _s across a 2-inch (5.1 cm) diameter wafer yielded a base value forR _s of 16±1 m at 77 K and 94.1 GHz (equivalent to 180±10 at 10 GHz) and good uniformity inR _s across the wafer. HTS-sapphire resonator measurements ofR _s for fifteen 1.2 cm square parts cut from a 3-inch diameter wafer yieldedR _s values scaled to 10 GHz of 196±10 at 80 K. Similar values were measured for Tl₂Ba₂CaCu₂O₈ films prepared on both sides of a 2-inch diameter wafer.Rs values at 10 GHz and 80 K of 147–214 were maintained over the course of 40 independent and successive deposition runs and corresponding anneals under nominally identical film fabrication conditions. Surface resistance at 5.55 GHz remained below 80 for maximum rf magnetic fields up to 85 Oe at 4.2 K and 7 Oe at 80 K, respectively. Results are compared with predictions of the two-fluid model. The relative advantages and disadvantages of the different techniques for measuring surface resistance are discussed.     

Influence of long-range and strong correlation effects on the electron-phonon coupling in high-Tc oxides

Calculations of the Eliashberg function ²F and the corresponding transport function _tr ² F for high-T _c oxides are presented using a screened ionic model (rigidly shifted ionic potentials screened by charge carriers in the CuO₂ planes within the RPA) for the electron-phonon coupling. It is shown that this model yields a large difference between the transport and the superconducting electron-phonon interaction due to imperfect screening and contributions beyond nearest-neighbor interactions. Using these results, the electron and the lattice heat conductivities are calculated both in the normal and the superconducting state and compared with experiment. Finally, effects due to a strong on-site electron-electron repulsion are included in leading order in an 1/N expansion, whereN is the number of spin degrees of freedom. In particular, it is shown for the infiniteU, one-band Hubbard model that correlations tend to suppress _tr ² F strongly and ² F somewhat.The author thanks M. Kulic for discussions and cooperation on the topic discussed in Section 4.