机顶盒自动化批量测试平台设计与实现

随着业务不断发展，越来越多型号的电视机顶盒投放市场。当广播电视前端业务升级时，需要对全部在网的不同类型机顶盒进行业务测试，以确保业务升级后用户可正常收视。本文设计了批量机顶盒自动化测试平台，能够构造不同的业务测试场景，实现对批量机顶盒进行同步测试。测试平台解决了传统手动测试单台机顶盒的局限，提高了测试效率，实现了测试自动化管理，对业务发展起到了积极推进作用。     

有线电视数字机顶盒与视频点播技术

机顶盒已经在开展有线电视多功能业务的地区广泛使用，根据用户需求和消费水平的差异，机顶盒支持的业务也不同，存在着多种类型的产品，介绍了有线电视数字机顶盒和在视频点播技术中的应用。     

低成本快速搭建全双向互动业务数字电视平台

目前数字电视整体转换有两种主流做法，一种是以单向机顶盒为主，对选择双向业务的用户更换机顶盒：另一种是单向机顶盒实施整体转换，机顶盒预留双向接口（RJ-45）。在整体转换中面临着一系列的问题：双向业务所要求的用户端设备总成本高：对机顶盒升级或者更换所带来操作层面复杂度增加：无法一步到位地将双向业务推送至用户，难以点燃用户需求。     

IP机顶盒标准与产业化进程

一 引言 近年来，IPTV业务在国际上发展迅速，IPTV业务的兴起带动了整个产业链的活跃。特别是作为业务终端的机顶盒设备，在产业链中占有重要地位．更是引起了各类设备产品制造商的关注。传统的电信设备制造商、互联网视频产品提供商、消费类电子产品制造商等都在开发研制基于IP网络电视的机顶盒设备。由于各行业对IPTV业务的理解不同，市场上的机顶盒产品设计理念也不同．致使IPTV机顶盒产品功能、性能和应用环境要求差异很大．缺乏应有的互通性．长此下去不利于产业发展。因此．中国通信标准化协会于2005年8月成立了IPTV业务特别工作组．重点研究IPTV业务系列标准。第一期包括6项技术标准．其中IPTV机顶盒技术标准作为IPTV系列标准之一．正在研究和制定当中。本文针对IP机顶盒标准及其产业化情况进行简单介绍。     

基于WebRTC的机顶盒业务拨测控制系统

为支撑实时远程调览全省(区、县)智慧广电的建设情况，建设远程控制系统实现区(市)本地机顶盒业务交互。采用基于WebRTC的机顶盒拨测控制系统对机顶盒实现自主控制和输出画面的采集编码，实现机顶盒侧业务质量的远程监测，为各类智慧广电业务终端的落地提供智能化、自动化的评估和测控手段。     

基于以太网接入的综合业务机顶盒的实现

介绍了一种通过对太网实现数据业务，通过有线电视网实现音视频业务的综合业务机顶盒的实现技术，在LSI SC2000平台上从系统、硬件和软件三个方面讨论了综合业务机顶盒的实现方法。     

康佳：攀登家庭数字娱乐中心的高峰

“此次展会，是我们最完整的一次产品展示。”北京海尔信息科技有限公司执行副总经理李晓冬先生在接受采访时如是说。据李总介绍．海尔此次参展主要分为三个层面：平移业务；增值服务和未来展望。平移业务包括海尔低成本平移机顶盒和机卡分离机顶盒等，其中最为突出的便是海尔全新推出的“一拖二”机顶盒。李总解释：”在一些经济发达的城市，大多用户家中拥有多台电视机，利用’一拖二’机顶盒不但可以为运营商和用户减轻成本负担，也可以为用户排除家中存在多台机顶盒的忧虑。该机顶盒具有多项功能，包括设置和控制分电视机，并进行实时交流等。”     

意法半导体：将智能互联家居进行到底

意法半导体（ST）于3月20日的媒体发布会上宣布，2012年收入8419亿美元，大中国与南亚区业务占总业务的411％，成为业务收入第一的区域。2012年机顶盒装机量逾8000万台，今年预计超过1亿，2012年底MPEG机顶盒芯片出货量超过8．6亿颗。中国的机顶盒市场在ST总的市场中占30％～35％，仅次于美国。根据ST介绍．     

基于机顶盒增值业务的实现方式

随着数字电视领域的发展,在数字电视系统平台上提供增值业务的需求也越来越迫切,大部分业务是以杌顶盒加电视为用户终端来实现;但由于受限于机顶盒处理能力等客观因素的限制,许多业务只能停留在设想上。本文对基于机顶盒的增值业务实现进行了探讨,分析了目前增值业务提供所面临的问题,讨论了机顶盒的不足,提出了将机顶盒与PC机相结合的观点。     

有线电视网络中使用的数字机顶盒技术

有线电视网络正在向数字化、网络化、产业化方向发展，有线电视网络提供综合信息业务的关键设备之一是用户终端设备数字机顶盒(STB)。本文从机顶盒的基本概念、有线电视数字机顶盒、有线电视数字机顶盒的基本原理、有线电视数字机顶盒的关键技术几方面，介绍了目前有线电视数字机顶盒的技术。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.