非故意掺杂n型GaN的负持续光电导现象

研究了MOCVD方法制备的非故意掺杂n型GaN薄膜的持续光电导现象.实验发现样品的光电导与入射光强有密切的关系,当入射光强由弱到强变化时,样品会依次出现正常持续光电导(PPC)、负光电导(NPC)和负持续光电导(NPPC)现象.据知,这是首次在一个样品中仅仅通过改变入射光强就可以依次产生以上现象的实验报道.通过系统的实验分析和理论研究认为,该现象形成的主要原因是材料中深能级电子陷阱和空穴陷阱共同作用的结果.     

非故意掺杂n型GaN的负持续光电导现象

研究了MOCVD方法制备的非故意掺杂n型GaN薄膜的持续光电导现象.实验发现样品的光电导与入射光强有密切的关系,当入射光强由弱到强变化时,样品会依次出现正常持续光电导(PPC)、负光电导(NPC)和负持续光电导(NPPC)现象.据知,这是首次在一个样品中仅仅通过改变入射光强就可以依次产生以上现象的实验报道.通过系统的实验分析和理论研究认为,该现象形成的主要原因是材料中深能级电子陷阱和空穴陷阱共同作用的结果.     

GaAs半导体中三光子吸收的非线性光电导测量

采用非线性光电导技术测量2.06μm激光激发的GaAs本征半导体三光子吸收,观察到三光子和单光子吸收的混合光电导,测得了三光子吸收系数.测量结果与理论计算符合较好.     

GaN外延材料中持续光电导的光淬灭

研究了非故意掺杂和掺Si的n型GaN外延材料持续光电导的光淬灭.实验发现,非故意掺杂GaN的持续光电导淬灭程度远大于掺Si的n型GaN;撤去淬灭光后前者的持续光电导几乎没有变化,后者却明显减小;稍后再次加淬灭光,前者的持续光电导仍无变化,而后者却明显增加.作者认为两者持续光电导的形成都与空穴陷阱有关,用空穴陷阱模型解释了非故意掺杂GaN持续光电导的形成以及淬灭过程;掺Si的n型GaN的持续光电导是电子陷阱(杂质能级)和空穴陷阱共同作用的结果,并且在持续光电导发生的不同阶段其中一种陷阱的作用占主要地位.     

偏振可调的太赫兹光电导天线设计北大核心

提出了一种偏振可调的太赫兹光电导天线,其结构由四个弧形金属电极、低温砷化镓衬底和氮化硅抗反射涂层构成。通过对光电导天线的工作原理分析,可以发现弧形金属电极结构决定天线的辐射偏振,且衬底的载流子迁移率、载流子寿命和衬底材料对激光的吸收直接影响天线的辐射特性。利用COMSOL软件对该光电导天线进行建模仿真,其结果表明该光电导天线可以在45°方向倍增地辐射线偏振太赫兹波,且辐射强度相较于常规光电导天线提高了30%,辐射带宽高达10 THz。所设计太赫兹光电导天线具有偏振可调、结构简单和易于加工等特点,在太赫兹光谱检测领域具有广阔的应用前景。     

带隙态对辉光放电a—SiNx：H光电导的作用

研究了a-SiN_x:H中带隙态和带尾态对光电导的影响。实验结果表明:退火引起光电导响应增加,光电流谱中的肩峰在200℃退火时消失,光生载流子的复合随退火温度的变化由双分子型变为单、双分子混合型,取决于光电导的带隙随退火温度的提高而略有增加。并从光电导测量定量地给出了悬键态密度。     

窄禁带半导体的光电跃迁效应

光电跃迁效应是窄禁带半导体红外探测器的基本物理过程。本文主要论述窄禁带半导体碲镉汞的带间光吸收跃迁的理论和实验。文中阐述了带间光吸收效应的基本规律的发现及其科学意义,介绍了这些规律在碲镉汞红外探测器材料器件设计中的应用,以及它在解释近年来发现的HgCdTe光电二极管电致负荧光现象方面的应用。     

立方相GaN的持续光电导

研究了金属有机物化学气相外延(MOVPE)方法生长的非故意掺杂的立方相GaN的持续光电导效应.在六方相GaN中普遍认为持续光电导效应与黄光发射有关,而实验则显示在立方GaN中,持续光电导效应与其中的六方相GaN夹杂有关系,而与黄光发射没有关系.文中提出,立方相GaN与其中的六方相GaN夹杂之间的势垒引起的空间载流子分离是导致持续光电导现象的物理原因.通过建立势垒限制复合模型,解释了立方相GaN的持续光电导现象的物理过程,并对光电导衰减过程的动力学作了分析.对实验数据拟合的结果证明以上的模型和推导是与实验相符的.     

窄禁带半导体的光电跃迁效应

光电跃迁效应是窄禁带半导体红外探测器的基本物理过程。本文主要论述窄禁带半导体碲镉汞的带间光吸收跃迁的理论和实验。文中阐述了带间光吸收效应的基本规律的发现及其科学意义,介绍了这些规律在碲镉汞红外探测器材料器件设计中的应用,以及它在解释近年来发现的HgCdTe光电二极管电致负荧光现象方面的应用。     

GaN外延材料中持续光电导的光淬灭

研究了非故意掺杂和掺Si的n型GaN外延材料持续光电导的光淬灭。实验发现非故意掺杂GaN的持续光电导淬灭程度远大于掺Si的n型GaN;撤去淬灭光后前者的持续光电导几乎没有变化,后者的却有明显减小;稍后再次加淬灭光前者的持续光电导无变化,而后者的有明显增加。我们认为两者持续光电导的形成都与空穴陷阱有关,用空穴陷阱模型解释了非故意掺杂GaN持续光电导的形成以及淬灭;认为掺Si的n型GaN的持续光电导是电子陷阱(杂质能级)和空穴陷阱共同作用的结果,并且在持续光电导发生的不同阶段其中一种陷阱的作用占主要地位。     

Acoustic Detection of Phase Transitions at the Nanoscale

Materials near structural phase transitions find applications in a wide range of devices. Typically, phase transitions are determined macroscopically through measurements of relevant order parameters and related property coefficients. Here, a method for understanding electric field induced phase transitions in ferroelectrically active materials at the nanometer scale via acoustic detection with band‐excitation piezoresponse force microscopy (BE‐PFM) is introduced. Specifically, the field‐induced rhombohedral (R) to tetragonal (T) phase transition in single crystal 0.72PbMg_1/3Nb_2/3O₃‐0.28PbTiO₃ (PMN‐PT) is mapped. It is shown that due to sample heterogeneity, some regions are more prone to the R–T transition, and display signatures in the acquired piezoresponse loops, as well as pronounced softening in the elastic modulus (monitored via the resonant frequency and calibrated with models of cantilever dynamics) that occurs just prior to phase switching. Landau–Devonshire thermodynamic theory confirms the stability of the tetragonal phase under applied fields in PMN‐PT, while phase‐field modeling suggests that the transition evolves smoothly in the probed volume of the tip, both in agreement with the BE‐PFM results. These results confirm the validity and utility of utilizing acoustic changes at phase transitions to detect their onset in nanoscale probed volumes, allowing spatial mapping of their onset with unprecedented resolution.     

Electric field effects on an optically-pumped HCOOH FIR laser and Zeeman laser theory

Electric field effects have been investigated on the output power of six far-infrared (FIR) laser lines from H¹²COOH optically-pumped by a CO₂ laser with its polarization arranged perpendicular to the Stark field. Optoacoustic signals observed on the pump lines were hardly affected by the applied electric field up to 0.6 kV/cm. By neglecting the electric field effects on the pump transitions, Zeeman laser theory has been applied to the FIR laser transitions. Numerical calculation predicts the observed FIR output power as a function of electric field. Experessions for oscillation frequency and intensity in homogeneous limit are given, which may be applicable to any FIR Stark laser so far as the pump transition is free from electric field effects.     

Modulating Trinary-Heterostructure of MoS2 via Controllably Carbon Doping for Enhanced Electrocatalytic Hydrogen Evolution Reaction

Understanding the phase transitions process of 2D transition metal dichalcogenides (2D-TMDs) from semiconducting (2H) to metallic (1T, 1T′) phase provides directionality for the iteration of hydrogen evolution catalysis. So far, the phase engineering methods are intensively explored, serving as practical tools for discovering low-cost novel nanomaterials for electronic and electrode devices in the realm of energy storage and catalysis. However, the heterostructures between 2H/1T, 2H/1T′, or 1T/1T′, functionalizing as critical active sites in the electrocatalytic process, are overlooked. Herein, a facile carbon doping paradigms, enabling augmentation of MoS₂ phase transition, together with density functional theory calculations and rationales to explain the counterintuitive directionality of transitions is reported. The experiment and simulation results indicate that the existence of carbon as interstitial atoms is more favorable to the phase transition than the substitution atoms. The heterogeneous interfaces between 2H and 1T or 1T′ are more conducive to charge transfer. As expected, the trinary-heterostructure nanofilm displays excellent electrocatalytic activities both in micro-electrochemical measurements and conventional electrolytic cells. The results provide a fresh insight into the 2D-TMDs phase transition mechanism and guide for trinary-heterostructure electrocatalysts for scalable production.     

Radiative and multiphonon relaxation of the mid-IR transitions ofPr3+ in LaCl3

Electric and magnetic dipole transition probabilities, fluorescence branching ratios, integrated emission coefficients, fluorescence efficiencies, and fluorescence lifetimes are determined for the lower lying states of Pr:LaCl₃ using the Judd-Ofelt theory and calculated multiphonon emission probabilities. The results are used to characterize demonstrated mid-IR laser transitions and predict new potential mid-IR laser transitions in Pr:LaCl₃     

Dynamics of the optically pumped midinfrared NH3laser at high pump power--Part II: Raman gain and ac stark shifts

Coherent effects produced by high-intensity pumping onaR(6, 0) in NH3are investigated for both the pure gas and for mixtures with an inert buffer gas. Two different Raman transitions are observed. One is the usual directly pumped Raman transition, and the other is pumped indirectly since it first requires a large population transfer to the upper vibrational level. This population transfer also creates inversion gain, shifted away from line center due to ac Stark shifts, on both transitions. Raman gain coefficients of 10 percent ċ cm^-1and inversion gain coefficients > 2 percent ċ cm^-1are observed, and compared to a combined density-matrix and rate-equation model.     

Laser Stark saturation spectroscopy in methyl alcohol

The method of Lamb dip spectroscopy in Stark tuned molecular gases is discussed and applied to the experimental assignment of methyl alcohol infrared transitions in the υ₅ C?O stretch band. Theoretical expressions for Stark Lamb dip patterns are derived for P, Q and R-branch transitions. Stark tuning results and transition quantum number assignments are presented for several 10μm transitions, along with measured values of resonant frequencies, absorption coefficients and pressure broadening coefficients.     

Interband scattering effects on secondary ionization coefficients in GaAs

The ionization rates of holes and electrons in GaAs were measured experimentally over a wide doping range covering field values from 2.2×10⁵ V/cm to 4.7×10⁵ V/cm. As opposed to most experimemental measurements in GaAs, no assumption of equal ionization rates of the two carriers has been made. By using the conventional theoretical relationship between carrier ionization coefficients and multiplication data, the effective α is observed to be larger than β in lightly doped diodes while β is larger than α in heavily doped diodes. Previous theories of ionization rates utilizing just the normal conduction and valence bands do not show any possibility of such a crossover. It is suggested that electron transitions to higher conduction bands, which effectively increase the equilibration time of the electron distribution function, offer a resolution of this difficulty. The dependence of the effective electron ionization rate on doping can be explained by the requirement that electrons must make an interband transition before reaching the ionization threshold energy. This interband transition time estimated by this experiment is of the order of 10^?13 sec and is comparable to the transit time of electrons in the avalanching region. The breakdown voltages extrapolated from the measured α and β are consistent with those observed experimentally.     

Wannier-Stark ladder spectra in InxGa1−xAs---GaAs strained layer piezo-electric superlattices

Wannier-Stark ladder transitions in the photocurrent spectra of (111)B In_xGa_1−xAs---GaAs strained layer superlattices are reported. Both vertical transitions in the same well and diagonal transitions between adjacent wells are observed. In contrast to (100) superlattices, the Wannier-Stark spectra are observed for both senses of applied bias relative to zero potential drop across the superlattice. The observed transition energies are found to be in good agreement with the predictions of exciton calculations. The piezo-electric field is deduced in a simple and direct way from analysis of the spectra as a function of bias.     

Thermoelectric and Magnetic Properties of Pt-Substituted $${BaFe_{4-{x}}Pt_{{x}}Sb_{12}}$$ Compounds

\({BaFe_{4-{x}}Pt_{{x}}Sb_{12}}\) (x = 0, 0.1, 0.2) compounds were prepared by melting and annealing, followed by a spark plasma sintering method. Low-temperature thermoelectric and magnetic properties were investigated based on Seebeck coefficient, electrical and thermal conductivity and magnetization measurements. The structural properties of \({BaFe_{4-{x}}Pt_{{x}}Sb_{12}}\) (x = 0, 0.1, 0.2) compounds were ascertained by powder x-ray diffraction analysis, confirming that all samples have a main phase of a skutterudite structure with the space group Im\({\mathrm {\bar{3}}}\). The lattice parameters obtained, 9.202(5), 9.199(5) and 9.202(1) Å for x = 0, 0.1 and 0.2, respectively, were found consistent with literature. The Seebeck coefficient sign shows that holes are dominant carriers in all compounds. The local maximum Seebeck coefficient was observed around 50 K which may be a trace of paramagnon-drag effect of charge carriers. Thermal conductivity and electrical resistivity measurements were carried out between 4.2 and 300 K. Temperature dependence of electrical resistivity reflects that all samples show semi-metallic behavior in our temperature range of 4.2–300 K. Samples for x = 0.1 and x = 0.2 show Kondo-like behavior. In magnetization measurement, we observe that there are two successive magnetic transitions in Pt-substituted compounds; however, there is only one (transition from a paramagnetic state to long-range magnetic ordering) in Pt-free compounds. In Pt-substituted compounds, the first transition appears at \( T _{ {\rm c}}\) = 48 K. In addition, the second transition is observed at \( T _{ {\rm irr}}\) = 30 K where an intermediate state is observed before the magnetic ordering transforms to an irreversible ferromagnetic state. We concluded that Pt substitution on the Fe side effectual on the thermoelectric and magnetic properties of \({BaFe_{4-{x}}Pt_{{x}}Sb_{12}}\) (x = 0, 0.1, 0.2) compounds.     

Electromodulation spectroscopy of the ground and excited state transitions in GaInN/AlInN multi-quantum wells

Contactless electroreflectance (CER) has been applied to investigate energies and intensities of optical transitions in GaInN/AlInN multi-quantum wells (MQWs) with the various QW widths (1.55 and 1.8 nm) and barrier thicknesses (3 and 6 nm). In addition to the ground state transition, optical transitions related to excited states (2H–1C and 1H–2C transitions, where kH–lC denotes a transition between the kth valence and the lth conduction subbands) have been observed in CER spectra. It has been found that the intensities of 2H–1C and 1H–2C transitions (i.e., transitions which are forbidden for non-polar square-like QWs) are comparable with the intensity of the ground state transition. In addition, it has been observed that the relative intensities of QW transitions depend on both the QW width as well as the barrier thickness. This experimental observation has been confirmed by theoretical calculations performed in the framework of the electron effective mass approximation model taking into account polarization effects in wurtzite III-N alloys. The calculations clearly show that the intensity of QW transitions for GaInN/AlInN MQWs strongly varies with the QW width as well as the barrier thickness.