共查询到19条相似文献,搜索用时 453 毫秒
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一种基于微结构的GaAs HEMT的压阻系数 总被引:1,自引:0,他引:1
GaAs HEMT(高电子迁移率晶体管)位于微结构悬臂梁根部附近的最大应力处。介绍了GaAs HEMT和微结构的设计加工,并通过实验研究了GaAs HEMT在平行于HEMT生长方向(Z方向)单轴应力作用下的力电耦合特性。测试结果表明:GaAs HEMT不同偏压下压阻系数不同,且它的最大压阻系数为(1.72±0.33)×10-7Pa-1,比Si高出三个数量级。 相似文献
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GaN HEMT器件以其优良的性能被广泛使用于各种领域的电子设备中。由于其经常被使用于高频、高温和高辐射的环境中,过高的环境应力会加速器件的损伤。当损伤达到一定程度时,就会引起器件失效,甚至导致整个系统失效。因此外加应力下GaN HEMT器件寿命成为了当前研究的热点。本文基于不同机构对GaN HEMT器件的三温度直流测试结果,运用多元线性回归法和图估计法对GaN HEMT器件在正常使用温度下的寿命进行预测。预测结果表明,GaN HEMT器件在正常使用时,器件沟道温度为150℃的情况下,中位寿命大于107小时;在累积失效概率达23%时,3.6mm栅宽器件与1.25mm栅宽器件的正常工作时间均为5.04×105小时,累积失效概率在23%以上时,1.25mm栅宽器件的寿命明显较3.6mm栅宽器件长。 相似文献
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基于宽带隙、高饱和电子漂移速率、高击穿场强等材料特性优势,GaN高电子迁移率晶体管(HEMT)在高频大功率器件领域发展前景广阔。在集成电路中,基准电压源是为其他电路模块提供稳定参考电压的关键功能模块。基于0.5μm BCD GaN HEMT工艺,提出了一种GaN基准电压源的设计方案。Cadence Spectre仿真结果显示,该GaN基准电压源在-40~150℃范围内可实现2.04 V的稳定电压输出,温度系数为3.7×10-6/℃。在室温27℃下,当电源电压由5 V增至20 V时,输出电压的线性灵敏度为0.13%/V。该GaN基准电压源具有高温度稳定性,后续可与不同的GaN基电路模块组合构成功能丰富的GaN基集成电路。 相似文献
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研制了一种高精度、低温度系数单列直插式电阻网络。通过优选电阻材料 ,改进工艺条件、激光调阻方法、包封工艺等解决了研制中出现的问题 ,使相对精度达到 0 0 3 % ,绝对精度达到± 0 0 2 % ,|α|≤ 7 61× 10 -6℃ -1,跟踪α≤ 5 0× 10 -6℃ -1,完全符合使用要求。 相似文献
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GaN HEMT的温度特性及其应用 总被引:1,自引:1,他引:0
对0.25 μm双场板结构GaN HEMT器件的温度特性进行了研究.负载牵引测试结果显示,GaN HEMT增益的温度系数为-0.02 dB/°C、饱和输出功率系数为-0.004 dB/°C.大的增益温度系数结合GaN HEMT 自热效应引起的高温升对实际应用特别是功率MMIC的设计带来了挑战.按常温设计的GaN功率MM... 相似文献
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毫米波GaN基HEMT器件材料结构发展的研究 总被引:1,自引:0,他引:1
由于GaN材料的高的饱和电子速度和击穿场强,GaN基HEMT已经成为实现毫米波器件的重要选择。回顾了GaN基HEMT器件材料结构的发展历程,就目前GaN基毫米波HEMT器件设计应用存在的短沟道效应和源漏间较大的导通电阻两个主要问题进行了机理分析,并对GaN基HEMT器件的毫米波应用未来发展方向进行了分析。同时从GaN基HEMT器件材料结构设计入手对解决方案进行了探讨性研究。针对面向毫米波应用的GaN基HEMT材料结构,为有效的抑制短沟道效应,可以采用栅凹槽结构加背势垒结构、采用InAlN等新材料,可以有效降低源漏导通电阻。 相似文献
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Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT 总被引:3,自引:0,他引:3
Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface
due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility
transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared
with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron
sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available
in the literature. 相似文献
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用现有的红外法测量的GaN基HEMT器件结温,比实际最高温度点的温度低.而用喇曼法测量结温对设备要求高且不易于操作.针对现有技术对GaN基HEMT器件结温的测量存在一定困难的问题,设计了一款HEMT器件匹配电路.利用红外热像仪测量HEMT器件的结温升高,并结合物理数值模拟仿真,提出一种小尺寸栅极结温升高测量方法.结果表明,建立正确的仿真模型,可以得到不同栅极长度范围内的温度.通过这种方法可以测量出更接近实际的结温,为之后研究加载功率与壳温对AlGaN/GaN HEMT器件热阻的影响奠定了理论基础,并且为实际工作中热特性研究提供了参考依据. 相似文献
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基于JEDEC颁布的结到壳热阻瞬态热测试界面法,对测试GaN HEMT器件热特性的电学法进行了研究.通过合理的测试电路设计,有效解决了GaN HEMT器件电学法测试中的栅极保护问题和自激问题,实现了GaN HEMT器件的界面热阻测量.根据测得的热阻-热容结构函数曲线可知,GaN HEMT器件结到壳热阻主要由金锡焊接工艺和管壳热特性决定.结合结构函数分析,对金锡焊接部分热阻和管壳热阻进行排序可剔除有工艺缺陷的器件.与红外热成像法的结温测试结果进行对比分析,证实了电学法测试结果的准确性. 相似文献
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GaN基HEMT场板结构研究进展 总被引:2,自引:0,他引:2
综述了近年来GaN基HEMT场板结构研究的最新进展,介绍了场板结构定义以及提高栅漏击穿电压的原理,总结了均匀场板结构、台阶场板结构、多层场板结构、双场板结构等对栅漏击穿电压BVGD的改善情况,叙述了栅终端场板和源终端场板的功率附加效率(PAE)、截止频率fT、最大振荡频率fMAX、增益等微波特性的不同点,获得了最佳场板结构以及场板连接方式. 相似文献
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Mohamed Kameche 《Journal of Infrared, Millimeter and Terahertz Waves》2006,27(8):1133-1144
The origins of HEMT distortion in passive control applications as SPST switch are presented in this paper. Also, this paper describes the change of the AlGaN/GaN HEMT switch distortion properties (second-and third distortion intercept points) over a wide range of temperature. The results indicate that the change in second-and third-order distortion intercept points is smaller (about 2dBm) over a wide range of temperature from ?50 to +300°C. A comparison of the GaN-based HEMT switch with InP-and GaAs-HEMT switches shows that the GaN technology generates lower distortion than its InP and GaAs technologies counterpart. 相似文献
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We report a simple method to extract the mobility and sheet carrier densities of conduction channels in conventional modulation doped field-effect transistor (MODFET) structures and unintentionally doped GaN-based high-electron mobility transistor (HEMT) structures for a special case. Extraction of the conduction channels from the magnetic field-dependent data can present number of problems; even the most recent methods encounter great difficulties. For the GaN-based HEMT structures which have lower mobilities and larger effective masses than that of GaAs-based counterparts, these difficulties become more prominent. In this study, we describe a simple method for magnetotransport analysis to extract conduction channels successfully for a special case that is commonly encountered: one bulk channel and one two-dimensional electron gas (2DEG) channel. Advantage of this method is mainly its simplicity. The analysis can be done with only two magnetic field-dependent measurements per temperature step. The method is applied to the magnetotransport results of an unintentionally doped AlGaN/AlN/GaN/AlN heterostructure over a temperature range of 29-350 K and in a magnetic field range of 0-1.5 T (μB<1). The results are then compared with those obtained using a commercial package for these calculations namely: quantitative mobility spectrum analysis (QMSA). 相似文献
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GaN高电子迁移率晶体管(HEMT)以其复杂的器件特性使其大信号建模变得十分困难,尽管EEHEMT、Angelov等模型结构曾经成功应用于GaAs HEMT/MESFET的大信号模型,但当它们被用于GaN HEMT建模时却不再准确和完备.面向GaN HEMT器件的大信号模型,本文提出了一种紧凑的模型拓扑,此模型拓扑综合了GaN HEMT器件的直流电压-电流(I-V)特性、非线性电容、寄生参数、栅延迟漏延迟与电流崩塌、自热效应以及噪声等特性.经验证此模型拓扑在仿真中具有很好的收敛性,适用于GaN HEMT器件的大信号模型的建立,满足GaN基微波电路设计对器件模型的需求. 相似文献
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A gallium nitride on silicon substrate (GaN-on-Si) high-electron-mobility transistor (HEMT) power device is commercially available. The package-level reliability of a GaN-based power device is necessary to respond market demands. Power cycling (PC) tests are a useful method to investigate the reliability of a packaged power component closer to a real application. An off-state drain-to-source leakage current failure (IDSS) of a 650 V discrete GaN-on-Si power device under PC test was reported in a previous study. In this paper, to investigate failure mechanism from the last study experiments to verify the root cause are conducted. Scanning acoustic microscope (SAM) images of failure samples exhibit the solder delamination between the discrete chip and the lead frame. The reasonable hypothesis of a correlation between the delamination and IDSS failure is suggested and is tested with a detailed analysis and supplemental experiments. In the process of analyzing the above hypothesis, the new risk of IDSS failure caused by losing electrical connection of silicon substrate rises. The solution for the risk also is proposed. It is discussed that the IDSS failure phenomenon is related to thermal stress induced during PC test. The tests and the analysis indicate that the failure is a thermal stress induced IDSS leakage, not matched previously reported mechanisms. 相似文献