超声波对泡沫镍抗拉强度和延伸率的影响

针对导电胶法制造泡沫镍存在的抗拉强度、延伸率低，结果不均匀等问题，在制造泡沫镍的浸涂石墨导电胶和电沉积镍的过程中，首次采用超声波发生装置，对比研究了有无超声波的4种情况下制得泡沫镍的抗拉强度、延伸率及三维网络结构。结果表明：超声波增加了石墨导电胶在泡沫基体上浸涂的均匀性；大大提高了镍在石墨导电层上初期沉积和后期沉积的均匀性；增大了Ni的结晶过电位，使Ni的临界晶核半径变小，结晶更加致密；泡沫镍的三维网络结构更加均匀，抗拉强度、延伸率大大提高。在自行设计制造的生产线上，验证了本文的试验结果。     

不同结构镍纳米线阵列的制备及其磁性

采用直流电沉积在多孔有序氧化铝模板中制备了不同结构的有序镍纳米线阵列。采用SEM和TEM对所制备的镍纳米线的形貌和结构进行了表征。研究了镍纳米线不同结构对镍纳米线阵列磁性性能的影响规律．当电沉积电压为2．5V时制备的镍纳米线为多晶结构；电沉积电压4V时，镍纳米线为沿[220]择优取向的单晶结构；电沉积电压＞5V时，择优取向由[220]转为[111]方向．磁滞回线结果表明，单晶镍纳米线阵列与多晶纳米线阵列相比具有更高的矩形度，沿[111]择优取向的单晶纳米线相比沿[220]取向的单晶镍纳米线具有更大的矩形度，表现出显著的磁各向异性。     

石英微晶天平技术在原子层沉积碳化镍薄膜过程中的应用研究北大核心CSCD

采用等离子体增强原子层沉积技术分别以Ni(amd)2、Ni(dad)2为镍、碳前驱体,氢等离子体为还原剂成功沉积了碳化镍薄膜。两个沉积过程中,碳化镍薄膜厚度都随着反应循环次数的增加而线性增加。利用石英微晶天平技术对碳化镍薄膜的沉积过程进行了原位在线测量。初步提出碳化镍薄膜的沉积机理,其中由等离子体作用产生的氢原子对沉积过程有重要作用。一方面,在等离子体中原子氢与Ni(amd)2或Ni(dad)2发生化学反应,生成Ni、挥发性的N-叔丁基乙酰胺盐和碳氢化合物,这些镍在镍表面上有吸附和分解的趋势。此外,原子氢对吸附的碳氢化合物脱氢生成碳化镍和大量碳物种具有促进作用。另一方面,预计它还会刻蚀碳化镍表面的无定形碳和石墨,或者将碳化镍分解成具有催化活性的金属镍。     

金属有机物化学气相沉积法沉积镍膜的影响因素

为了获得高速沉积镍膜的工艺参数，以羰基镍[Ni(CO)4]为前驱体，用金属有机物化学气相沉积法进行试验，以SEM，DSC，XRD测试分析技术探讨了载气、温度和羰基镍的摩尔分数对沉积速率的影响；也探讨了温度及羰基镍的摩尔分数对镍膜微观形貌的影响。结果表明，以氩气为载气比氦气为载气更容易获得高沉积速率；在沉积温度为150℃左右可获得沉积速率较快、微观形貌较好的薄膜；随羰基镍摩尔分数的增加，沉积速率也明显增大，同时薄膜的微观形貌也变得较为粗大，但达到30％之后，沉积速率增速减缓。     

电沉积法制备纳米晶材料

电沉积法是制备完全致密的纳米晶材料最有前途的方法之一。介绍了电沉积法制备纳米晶镍及其合金的研究现状，以及制备方法对纳米晶材料性质的影响。     

电沉积纳米晶镍的研究现状及展望

综述了电沉积法的特点和基本过程,电沉积纳米晶镍的制备工艺,电沉积纳米晶镍的织构和热稳定性,以及电沉积纳米晶镍的强度和硬度;展望了电沉积纳米晶镍的研究趋势.     

金属有机化学气相沉积的研究进展

概述了金属有机化学气相沉积技术(MOCVD)的一般原理,讨论了适用于金属有机化学气相沉积的前驱体化合物及反应器类型,介绍了金属有机化学气相沉积技术在半导体化合物材料和各种薄膜材料中的发展及应用。     

陶瓷表面负载纳米镍颗粒的研究

用催化剂制备负载金属镍受温度的影响较大,为了减轻温度的影响,提出了低温下陶瓷表面离子镍活化、化学沉积镍工艺.离子镍活化是通过陶瓷表面吸附柠檬酸后,吸附Ni2+,再以KBH4还原吸附的镍离子.用虹外漫反射、扫描探针显微镜(AFM)、扫描电亍显微镜(SEM)和XRD对前处理过程、镍表面形貌、晶体结构进行了探测.结果表明:在陶瓷表面引入的羧基,可以化学吸附Ni2+,Ni2+还原后在基体表面形成催化活性中心,从而引发化学沉积镍过程;沉积镍后的陶瓷表面为亮黑色,归因于陶瓷表面形成了分散的纳米镍颗粒.     

镍锰合金的电沉积行为

为了了解镍锰合金沉积的电极过程,采用线性扫描伏安法、单电位阶跃计时电流法和交流阻抗谱技术对镍锰合金的电沉积与镍的电沉积进行了对比性研究.结果表明:氯化锰的加入增大了阴极极化;镍和镍锰合金的电结晶都与三维连续成核理论相吻合,但加入氯化锰后电结晶成核速率常数增大,晶体向外生长速度和镍离子的扩散系数下降;电荷传递电阻增大,双电层电容下降.这些变化可能都与Mn(OH)2在阴极表面的吸附有关.     

不同结构镍纳米线阵列的制备及其磁性

采用直流电沉积在多孔有序氧化铝模板中制备了不同结构的有序镍纳米线阵列。采用扫描电子显微镜和透射电子显微镜对所制备的镍纳米线的形貌和结构进行了表征。研究了镍纳米线不同结构对镍纳米线阵列磁性性能的影响规律。当电沉积电压为2.5V时制备的镍纳米线为多晶结构;电沉积电压4V时,镍纳米线为沿[220]择优取向的单晶结构;电沉积电压大于5V时,择优取向由[220]转为[111]方向。磁滞回线结果表明,单晶镍纳米线阵列与多晶纳米线阵列相比具有更高的矩形度,沿[111]择优取向的单晶纳米线相比沿[220]取向的单晶镍纳米线具有更大的矩形度,表现出显著的磁各向异性。     

Synthesis of carbon nanofiber films and nanofiber composite coatings by laser-assisted catalytic chemical vapor deposition

Uniform carbon nanofiber films and nanofiber composite coatings were synthesized from ethylene on nickel coated alumina substrates by laser-assisted catalytic chemical vapor deposition. Laser annealing of a 50 nm thick nickel film produced the catalytic nanoparticles. Thermal decomposition of ethylene over nickel nanoparticles was initiated and maintained by an argon ion laser operated at 488 nm. The films were examined by scanning electron microscopy and by transmission electron microscopy. Overall film uniformity and structure were assessed using micro-Raman spectroscopy. Film quality was related to the experimental parameters such as incident laser power density and irradiation time. For long irradiation times, carbon can be deposited by a thermal process rather than by a catalytic reaction directly over the nanofiber films to form carbon nanocomposite coatings. The process parameters leading to high quality nanofiber films free of amorphous carbon by-products as well as those leading to nanofiber composite coatings are presented.     

镍衬底上定向金刚石膜的成核与生长

提出了一种包括晶粒接种、高温退火、成核、生长四过程的薄膜沉积新方法 ,用射频等离子体增强热丝化学气相沉积系统 ,在Ni衬底上制备了定向金刚石膜。通过对成核和生长两过程工艺条件的研究 ,掌握了提高成核密度和金刚石定向生长规律。实验还表明 ,膜与Ni衬底之间未见Ni C H界面层的形成     

A study of graphene films synthesized on nickel substrates: existence and origin of small-base-area peaks

Large-area graphene films, synthesized by the chemical vapor deposition (CVD) method, have the potential to be used as electrodes. However, the electrical properties of CVD-synthesized graphene films fall short of the best results obtained for graphene films prepared by other methods. Therefore, it is important to understand the reason why these electrical properties are inferior to improve the applicability of CVD-grown graphene films. Here, we show that CVD-grown graphene films on nickel substrates contain many small-base-area (SBA) peaks that scatter conducting electrons, thereby decreasing the Hall mobility of charges in the films. These SBA peaks were induced by small peaks on the nickel surface and are likely composed of amorphous carbon. The formation of these SBA peaks on graphene films was successfully suppressed by controlling the surface morphology of the nickel substrate. These findings may be useful for the development of a CVD synthesis method that is capable of producing better quality graphene films with large areas.     

泡沫镍负载TiO2和TiO2/Al2O3薄膜的光催化性能研究

以泡沫镍为载体，Al2O3作为过渡中间层，用溶胶-凝胶法在泡沫镍上负载锐钛矿相的TiO2薄膜，制成泡沫金属基的TiO2和TiO2／Al2O3光催化剂，利用XRD和FE-SEM等测试手段对其性质进行表征，用乙醛气体的光催化降解测试其活性．研究表明：泡沫镍负载的TiO2和TiO2／Al2O3薄膜具有良好的光催化活性，特别是TiO2／Al2O3薄膜具有更高的催化活性．这是由于负载的Al2O3过渡中间层增大了载体的比表面积，具有吸附浓缩作用，同时也增加了负载光催化剂的活性位数量．实验表明：TiO2／Al2O3薄膜的光催化活性和稳定性较单一的TiO2薄膜有非常显著的提高．     

Biocompatibility of multi-walled carbon nanotubes grown on titanium and silicon surfaces

Cell adhesion and cell viability of aligned multi-walled carbon nanotube (MWCNT) films were verified using Fibroblast L929 mouse cells. The MWCNTs were produced by a microwave plasma chemical vapor deposition (2.45 GHz) on silicon (Si), with a nickel catalyst, and titanium (Ti), with an iron catalyst. MTT assay and cellular adhesion were used for biocompatibility tests (ISO 10993-5). The results show very high cell viability and many layers of cells adhered on the surface formed by the nanotube tips at films grown on silicon surfaces. The MWCNT grown on Ti surfaces presented lower cell viability and a reduced number of cells on the surface formed by the nanotube tips. The different behavior is most probably related to excess iron contamination present in the case of titanium substrate, while nickel catalyst is probably enclosed by the nanotubes.     

Chemical bath deposition of CdS thin films and their partial conversion to CdO on annealing

CdS thin films prepared by chemical bath deposition technique are characterized using X-ray diffraction, optical absorption spectrometry and scanning electron microscopy. The results of the annealing studies on the films in flowing argon and air atmospheres are also presented in this paper. The resistivity has drastically reduced on annealing in flowing air which is attributed to the partial conversion of CdS to CdO phase.     

The effect of interfacial bonding on the adhesion of brittle film-polymer multilayered structures

A previously derived model and method to determine the adhesion of thin brittle films coated on flexible substrates are used to study the effect of changing the interfacial bonding on adhesion. Nickel films with oxidized and unoxidized surfaces are prepared by vacuum deposition onto Mylar. Various thickness of selenium are then deposited onto the nickel. By measuring the tensile force required to cause cohesive and adhesive failure, the approximate crack spacing and energy required to separate the interface are calculated. The calculated and measured crack spacings are compared and the chemical structure and fracture surface defined by electron spectroscopy for chemical analysis (ESCA).     

电子束蒸发制备氧化钨、氧化镍薄膜的电致变色性能

电致变色(EC)材料在外加电压作用下能可逆地改变其光学性能.其中氧化钨与氧化镍是典型的电致变色用材料.本文用电子束蒸发的方法在ITO玻璃基片上制备了此两种薄膜,研究了热处理工艺对薄膜结构与电致变色性能的影响.电致变色性能由电化学方法测试.封装的半固态智能窗器件具有很好的电致变色性能.     

Characterization of solar selective molybdenum black films

It has been found possible to prepare excellent solar selective molybdenum black films by a modified catholic electrodeposition technique. These films have been characterized using XPS, AES depth profiling, SEM, chemical analysis, X-ray diffraction and VIS-IR reflectance spectroscopy. The study shows that the film is composite of MoO₃ matrix containing fine nickel and copper particles. It is also observed that the copper concentration increases from the surface of the film towards the substrate. Reported solar selectivity can be explained using the Maxwell Gannett theory along with the stacked layer treatment developed by Anderson.     

Electrical characterization of amorphous silicon carbide thin films deposited via polymeric source chemical vapor deposition

Polymeric source chemical vapor deposition (PS-CVD) was used to synthesize amorphous silicon carbide (a-SiC) thin films. The PS-CVD process was conducted at temperatures between 750 and 1000 °C. The substrates used were silicon single crystal wafers of p-type and n-type, and thermally grown silicon dioxide substrates. The chemical and electrical properties of the films were studied by various techniques, including Fourier transform infrared spectroscopy, elastic recoil detection (ERD), and capacitance-voltage technique. A correlation was observed between the average concentration of oxygen in the films and the deposition temperature, linking a low oxygen concentration to a high deposition temperature. However, the concentration of oxygen in the films deposited at the same temperature is independent of the substrate. The thin films deposited at low temperature showed insulating behaviour, while the semiconducting behaviour is obtained at high deposition temperatures. Ohmic contacts were obtained on the deposited semiconductor thin film by evaporating nickel contacts, followed by annealing of the sample at 800 °C for 2 min.