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1.
A V-band planar narrow bandpass filter using a new type integrated waveguide transition 总被引:2,自引:0,他引:2
Sung Tae Choi Ki Seok Yang Tokuda K. Yong Hoon Kim 《Microwave and Wireless Components Letters, IEEE》2004,14(12):545-547
A surface mountable planar narrow bandpass filter is proposed and demonstrated at V-band. The filter is constructed using an integrated waveguide in an alumina substrate employing a novel microstrip line to waveguide transition. The insertion loss per one transition is less than 0.1 dB over 43 to 73 GHz. A fabricated three-pole Chebyshev filter exhibits an insertion loss of 3 dB with a 3.3% bandwidth at a center frequency of 62 GHz and the return loss is better than 15 dB in the passband. 相似文献
2.
A new 60 GHz fourth-order cross-coupled bandpass filter using a step- impedance-resonator (SIR) miniaturised open-loop resonator and the miniaturised-hairpin (MH) resonator was designed and fabricated on 0.13 mum bulk CMOS. It has 8.5 GHz (58-66.5 GHz) bandwidth, 5.9 dB insertion loss, and better than 10 dB return loss over the whole passband, and exhibits high selectivity and a compact size of 714.9 times 484 mum (0.346 mm ). This filter is the first reported cross-coupled filter above 40 GHz on CMOS. 相似文献
3.
Hsu Cheng-Ying Chen Chu-Yu Chuang Huey-Ru 《Electron Device Letters, IEEE》2008,29(3):246-248
This letter presents the design and implementation of a 60-GHz millimeter-wave RF-integrated-circuit-on-chip bandpass filter using a 0.18-mum standard CMOS process. A planar ring resonator structure with dual-transmission zeros was adopted in the design of this CMOS filter. The die size of the chip is 1.148times1.49 mm2. The investigations of sensitivity to the insertion loss and the passband bandwidth for different perturbation stub sizes are also studied. The filter has a 3-dB bandwidth of about 12 GHz at the center frequency of 64 GHz. The measured insertion loss of the passband is about 4.9 dB, and the return loss is better than 10 dB within the passband. 相似文献
4.
We construct a high-performance optoelectronic mixer by integrating a near-ballistic uni-traveling-carrier photodiode with a V-band (50-75 GHz) coplanar-waveguide-based bandpass filter. The demonstrated device shows an improvement in the V-band output radio-frequency (RF) power and conversion loss of around 3 and 10 dB, respectively, over that of the control device, which does not have such an integrated filter. The strong nonlinearity of the ballistic-transport of the electrons in the active device, and the excellent RF performance of the integrated filter help us to achieve an internal-conversion gain of around 1 dB, from the low to very high optical injected local-oscillator power (20.6 dBm), which corresponds to an approximately 17-mA high-output photocurrent, and very wide up-conversion bandwidth (>15 GHz) at the V-band. 相似文献
5.
基于H形感性窗结构设计了一款低插入损耗的8阶波导腔太赫兹滤波器.经Ansoft HFSS对滤波器进行仿真优化后,滤波器采用传统的数控铣进行实物加工.测试结果表明:滤波器的中心频率位于179.1 GHz,1 dB相对带宽为8.7%.滤波器中心频率处的插入损耗为0.34 dB,回波损耗优于18.9 dB.所设计的太赫兹腔体... 相似文献
6.
Hong-Teuk Kim Jae-Hyoung Park Yong-Kweon Kim Youngwoo Kwon 《Microwave and Wireless Components Letters, IEEE》2002,12(11):432-434
This paper presents compact V-band MEMS-based analog tunable bandpass filters with improved tuning ranges and low losses. For compact size and wide tuning range, the two-pole filters are designed using the lumped-elements topology with metal-air-metal (MAM) bridge-type capacitors as tuning elements. Capacitive inter-resonator coupling has been employed to minimize the radiation loss, which is the main loss contributor at high frequencies. Two filters have been demonstrated at 50 and 65 GHz. The 65-GHz analog tunable filter showed a frequency tuning bandwidth of 10% (6.5 GHz) with low and flat insertion losses of 3.3 /spl plusmn/ 0.2 dB over the entire tuning range. 相似文献
7.
Kaunisto R. Reimann K. Boyle K. Krogerus J. Liu Z. Steeneken P.G. Ollikainen J. 《Electronics letters》2009,45(14):738
A programmable bandpass filter for 2.0?2.7 GHz centre frequencies and 450?500 MHz 3 dB bandwidth is presented. The filter is based on packaged RF-MEMS capacitor matrices as the tunable elements. The coupled-resonator filter topology was chosen with added transfer zeros. The results show excellent match between simulation and measurements. The measured insertion loss is 4.5?5.5 dB over the tuning range, and the linearity measurements show an OIP3 of 55? 64 dBm. 相似文献
8.
9.
Wei-Yu Chen Shoou-Jinn Chang Min-Hang Weng Cheng-Yuan Hung 《Microelectronics Journal》2011,42(11):1252-1256
We proposed a fractal-based dual-mode bandpass filter (BPF) using a standard CMOS process for application of 60 GHz WirelessHD system. We first investigated the effect of coupling feedlines of I/O ports set at different layer of M3 and M4 layer on the transmission loss of the resonator, and verified the nature coupling of fractal-based dual-mode filter. Experimental result shows that the designed filter with a fractional-bandwidth (FBW) of 23%, an insertion loss about 7 dB and return loss larger than 10 dB. Additionally, two transmission zeros are appeared at the passband edges, thus much improve the selectivity of the proposed CMOS BPF. The result indicates that fractal-based structure is feasible and can meet the requirement in the mm-wave application. 相似文献
10.
A compact tune-all bandpass filter is presented. This electronically tuned filter is based on series-coupled slow-wave resonators. It allows wide simultaneous and continuous tunings of centre frequency (+/-15% around 0.7 GHz) and bandwidth (from 50 to 100 MHz) with insertion loss IL<5.4 dB and return loss RL>11 dB. This two-pole bandpass filter exhibits also a very small surface of only 7.3times10-3 lambda0 2 and a -20 dB stop-band that extends up to 10 GHz 相似文献
11.
8千兆赫介质带通滤波器 总被引:1,自引:0,他引:1
陈毓琪 《固体电子学研究与进展》1985,(1)
本文描述了介质窄带带通滤波器的设计方法,介绍了8千兆赫圆柱形介质谐振器窄带滤波器.该滤波器的中心频率为8059兆赫,带宽为±25兆赫,通带插损分别小于0.5分贝(三谐振器)和0.8分贝(四谐振器),阻带衰减分别大于25分贝(三谐振器)和35分贝(四谐振器),通带内驻波特性,其反射损耗大于25分贝. 相似文献
12.
Presented is a compact millimetre-wave bandpass filter using a thin-film microstrip meander line on standard 0.18 mum CMOS silicon substrate without any post-processing step yet still reducing the substrate loss and crosstalk to a large extent. To miniaturize overall circuit size, a half-wavelength resonator is constructed in meander-line configuration and its resonant frequency is designed to be 40 GHz. The prototype single-resonator bandpass filter occupies a circuit area of 210 times 210 mum on silicon. Measured insertion loss is 2.5 dB, which agrees well with the design value in the simulations. 相似文献
13.
基于一种新型的多模谐振器设计了一款宽带带通滤波器,该多模谐振器由鱼骨形谐振器及中心加载倒T形谐振器构成。滤波器的中心频率位于2.47 GHz,相对带宽为100%。滤波器具有极高的频率选择性,其边带滚降速度分别为232 dB/GHz和168 dB/GHz。此外,滤波器还具有较低插入损耗0.4 dB,紧凑的电路尺寸以及宽阻带抑制能力。 相似文献
14.
A technique to construct a low-loss printed bandpass filter was demonstrated by using a higher mode strip line at 30 GHz. A three-pole, 0.1 dB Chebyshev ripple bandpass filter with a 2% relative bandwidth was designed and fabricated. The insertion loss was found to be 0.7 dB. 相似文献
15.
Kuo-Ken Huang Meng-Ju Chiang Tzuang C.-K.C. 《Microwave and Wireless Components Letters, IEEE》2008,18(2):94-96
This letter presents a low-power active bandpass filter (BPF) at K-band fabricated by the standard 0.18 mum 1P6M CMOS technology. The proposed filter is evolved from the conventional half-wavelength resonator filter, using the complementary-conducting-strip transmission line (CCS TL) as the half-wavelength resonator. Furthermore, the complementary MOS cross-couple pair is proposed as a form of current-reuse scheme for achieving low-power consumption and high Q-factor simultaneously. The simulated results indicate that the Q-factor of the proposed half-wavelength resonator can be boosted from 9 to 513 at 25.65 GHz compared with the resonator enhanced by the nMOS cross-couple pair to Q-factor of merely 43 under the same power consumption. The proposed active BPF of order two occupies the chip area of 360 mum times 360 mum without contact pads. The measured results show that the center frequency of the active BPF is 22.70 GHz and a bandwidth of 1.68 GHz (7.39 %). The measured P1 dB and noise figure at 22.70 GHz are -7.65 dBm and 14.05 dB, respectively. There is a 56.84 dB suppression between the fundamental tone and the second harmonic when the input power is -11.26 dBm. While showing 0 dB loss and some residual gain, the active BPF consumes 2.0 mA at 1.65 V supply voltage with maximum of 0.15 dB insertion loss and 9.96 dB return loss at pass band. 相似文献
16.
T. Wang Y.-S. Lin S.-S. Lu 《Electronics letters》2007,43(7):398-399
A K-band second-order bandpass filter with planar inductive pi-network using CMOS technology is demonstrated for the first time. To reduce the substrate loss of the filter, the CMOS process compatible backside inductively-coupled-plasma (ICP) deep trench technology is used to selectively remove the silicon underneath the filter. After the ICP etching, a 55.5-92.2% improvement in quality factor is achieved for the inductors in the filter. In addition, a 1.1 dB improvement in maximum available power gain (GAmax) in K-band is achieved for the filter after the ICP etching. These results show that the micromachined pi (PI) filter is very promising for microwave/millimetre-wave RFIC applications 相似文献
17.
《Microwave and Wireless Components Letters, IEEE》2008,18(9):587-589
18.
Ching-Wen Tang Dong-Lin Yang 《Microwave Theory and Techniques》2008,56(7):1668-1674
19.
《Components and Packaging Technologies, IEEE Transactions on》2009,32(4):759-765
20.
基于基片集成波导(substrate integrated waveguide,SIW)结构设计了两款四阶的耦合带通滤波器,使用三维全波电磁场仿真软件HFSS对设计的两款滤波器进行了仿真设计和优化.由仿真结果分析得出,两款滤波器的工作频率均位于毫米波频段.第一款SIW滤波器实现了切比雪夫型响应,中心频率为20 GHz,带宽为2 GHz,通带内的插入损耗低于1.5 dB,回波损耗低于-20 dB,在阻带中对信号的衰减程度可以达到50 dB.第二款SIW滤波器实现了准椭圆函数型的响应,中心频率为29.1 GHz,带宽为300 MHz,通带内的插入损耗低于1 dB,回波损耗低于-20 dB,在通带到阻带的过渡中实现了两个陷波点.仿真结果表明,在毫米波滤波器设计中引入SIW结构,有利于优化滤波器尺寸,得到较好的滤波器性能指标,是毫米波滤波器发展的一个重要方向. 相似文献