16通道GEM探测器前端读出ASIC的设计

介绍了用于GEM(Gas Electron Multiplier)探测器读出的ASIC芯片GEMROC(GEM ReadoutChip)的设计.该芯片采用Chartered 0.35μm 2P4M CMOS工艺,单片集成16个读出通道,每个通道包括电荷灵敏前放(CSA)、CR-(RC)2成形电路和驱动电路.增益和成形时...     

基于峰值保持电路的GEM探测器前端读出ASIC设计

介绍了一种用于多层GEM探测器的低噪声前端读出ASIC芯片.针对GEM探测器输出信号特点,设计了电荷灵敏放大器、整形电路和峰值保持电路,并对其噪声、成形时间等设计指标参数进行了分析.     

四通道低噪声GEM探测器前端读出ASIC设计

介绍了一种用于多层GEM探测器的低噪声前端读出ASIC芯片.针对CEM探测器输出信号特点,设计了电荷灵敏放大器、极零相消电路和准高斯成形电路,并对其噪声指标、成形时间等设计指标等参数进行分析.     

基于碳化硅探测器的前端信号调理电路设计

碳化硅探测器能够在高温、高辐射强度下稳定工作,适用于核辐射探测。碳化硅探测器输出端连接前端信号调理电路,能够放大碳化硅探测器输出的微弱信号,从而使后端设备采集到准确的数据。设计了前端信号调理电路,包括电荷灵敏前置放大电路和脉冲成形主放大电路,重点分析了影响电荷灵敏前置放大电路变换增益、上升时间、噪声等性能指标的影响因素,采用阻容反馈、极零相消、有源滤波成形等设计提升电路的整体性能。实验室仿核脉冲测试及²⁴¹ Am中子源辐照测试表明,该电路可用于碳化硅探测器的核辐射测量。     

用于MICROMEGAS的电荷灵敏前放芯片研究

介绍了一种用于MICROMEGAS气体探测器的电荷灵敏前放ASIC设计,重点介绍了电路结构,详细分析了电荷灵敏前放的噪声.针对探测器的应用,实现了一种新型电荷灵敏前置放大芯片MMCSA的设计.MMCSA芯片采用Chartered 0.35μm工艺制作,测得的输入电荷范围为2～ 350 fC,噪声为小于1000 e-.     

用于CZT探测器信号读出的低噪声电荷灵敏前放A250

本文测量和分析了电荷灵敏前放A250的电子学噪声对CZT探测器能谱展宽的影响.在成形时间下1 μs下A250的零电容噪声为104.8 e,噪声电容斜率为4.18 e/pF.测得241Am 59.5 kev全能峰能量分辨率为4.08%.     

平面型碲锌镉(CZT)室温探测器的噪声和性能

CdZnTe(CZT)探测器是近年来迅速发展的新型半导体探测器,具有体积小、分辨率高、可在室温下工作等优点。论文通过分析探测器的噪声组成,并经过实验数据分析,证明了影响探测器性能的主要因素是探测器晶体内电荷收集不完全,并为探测仪器设计时的成形时间选择提供了参考。     

两级放大的气体位置灵敏探测器

介绍了近年来所出现的几种两级联合新型气体位置灵敏探测器。在很安全的电压下,不出现打火或电荷堆积就可以实现高计数率下的高增益。     

一种用于大面积塑料闪烁体电子学电路的设计

介绍的电子学电路用于大面积塑料闪烁探测器,包括光电倍增管分压器电路、电荷前放、主放大器几部分,主放大器由放大、成形、甄别及符合电路组成.电路主要具有快速、动态范围宽、电荷灵敏度高等特点.     

锂玻璃探测器辐射特性的试验研究

锂玻璃中子探测器具有中子探测效率高的特点,尤其在高热中子注量率条件下,能够迅速得到中子通量数据,为脉冲堆等热中子辐射场的中子通量快速测量提供了一种可行的手段。本文用锂玻璃探测器样机对252Cf中子源进行测试,获得了输出的中子脉冲信号,并计算得出对应的中子脉冲信号的平均电荷量。分析结果表明,锂玻璃探头厚度对中子脉冲平均电荷量有影响,且脉冲平均电荷量及光电倍增管(PMT)增益随电压的变化而变化的趋势基本一致,PMT在较高的工作电压条件下测量得到的中子脉冲平均电荷量更为精确,可信度更高。     

Application of CMOS charge-sensitive preamplifier in triple-GEM detector

1 Introduction With novel materials and advanced technique of printed circuit board (PCB) and micro-electronics be- ing used in MPGD, over the past two decades, great progress has been made in MPGD[1], and as a new type of MPGD, the GEM[2] detector was developed during the late 1990s. Standard GEM from CERN is a thin, two-side copper-coated Kapton foil, perforated with a high density of holes etched using a photolitho- graphic process. The diameter of these holes is about 70 μm (ext…     

Design and test results of a low-noise readout integrated circuit for high-energy particle detectors

A low-noise readout integrated circuit for high-energy particle detector is presented.The noise of charge sensitive amplifier was suppressed by using single-side amplifier and resistors as source degeneration.Continuous-time semi-Gaussian filter is chosen to avoid switch noise.The peaking time of pulse shaper and the gain can be programmed to satisfy multi-application.The readout integrated circuit has been designed and fabricated using a 0.35 μm double-poly triple-metal CMOS technology.Test results show the functions of the readout integrated circuit are correct.The equivalent noise charge with no detector connected is 500–700 e in the typical mode,the gain is tunable within 13–130 mV/fC and the peaking time varies from 0.7 to 1.6 μs,in which the average gain is about 20.5 mV/fC,and the linearity reaches 99.2%.     

用于GEM探测器的电容积分式读出芯片的研究

介绍了GEM探测器阵列结构的一种读出方案,重点介绍了该读出方案中开关阵列芯片的设计.主要内容包括PAD前端读出电子学结构,开关电容阵列结构工作原理,开关阵列芯片设计,文章的最后给出了芯片测试结果.该10通道开关电容阵列芯片可以扩展为更多的通道,以满足更大规模的GEM探测器的阵列方式读出需要.     

Characteristics of 16-Channel ASIC Preamplifier Board for Microstrip Gas Chamber and Animal PET

A 16-channel ASIC preamplifier board has been designed for microstrip gas chamber (MSGC) and animal position emission tomography (PET) detectors. The highly integrated ASIC chips can be used for individual readouts from a large number of channels to improve the spatial resolution and counting rate. The preamplifier board was tested to have a low optimum equivalent noise charge (ENC) of ~ 1400 e^? FWHM at a shaping time of 0.1 μs. The output voltage to input charge gain is 0.96 V/pC, and the nonlinearity is ~ 2:0% over a range of ?500 fC to 1000 fC in input charge. The rise time (10%–90%) with no input capacitor is about 54 ns. The power consumption of this preamplifier board is ~ 100 mW. The preamplifier board has been used to read out a 3 × 3 cm MSGC plate and an optimum FWHM energy resolution of 19.1% (5.9 keV peak of Fe-55) was obtained.     

CMOS low-noise switched charge sensitive preamplifier for CdTe andCdZnTe X-ray detectors

CdTe and CdZnTe X-ray detector arrays for imaging and spectroscopy provide low capacitance current sources with low leakage currents. The optimal shaping time for low-noise operation is relatively high in CMOS analog channels that provide the readout for these detectors. The shaper is centered at lower frequencies, and thus the 1/f noise from the electronics is the main noise source that limits the resolution of the channel. The optimal dimensions of the input stage MOSFET are determined by this noise. In this paper a design criterion for the optimization of the resolution and the power consumption in a 1/f noise dominated readout is introduced. A readout based on CMOS switched charge sensitive preamplifier without feedback resistor has been designed and fabricated in the CMOS 2-μ low-noise analog process provided by MOSIS. This design provides high sensitivity and the possibility to integrate a large number of channels with low power consumption. Measurements of the performance of a first prototype chip are presented     

A new glass GEM with a single-sided guard-ring structure

The gas electron multiplier (GEM) is a gaseous detector that is widely used in many applications. Our glass GEM (G-GEM) comprises a photo-etchable glass (PEG3, HOYA Corporation, Japan). Our research indicated that it shows superior performance compared with other gas detectors. In this article, a new type of G-GEM is introduced. It has a guard-ring structure around the holes in order to improve the spark tolerance by reducing the total capacitance of each hole structure. A measured gas gain of approximately 7500 is attained for this new G-GEM with a single-sided guard-ring structure using a gas mixture of Ar (90%) and CH₄ (10%) in the gas flow mode. An energy resolution of 17.3% (FWHM) is also achieved with a collimated 6 keV X-ray beam. The results of a 10 to 12 hour gas gain stability measurements are also shown.     

基于3D Si PIN阵列热中子探测器的变增益宽动态前端读出电子学设计

基于Si CMOS技术的前端读出ASIC主要是根据3D Si PIN阵列热中子探测器的输出信号特性设计的。所设计的读出ASIC的主要电路模块包括电荷灵敏放大器（CSA）、模拟开关设计、具有三级电荷灵敏自动转换的自动增益控制模块（AGC）、相关双采样（CDS）和基准电流源电路。仿真结果表明,前端电路的输入动态范围为10 fC~80 pC。根据热中子探测器输出信号特性设计的ASIC的3个增益系数分别为19 V/pC、039 V/pC和94 mV/pC。所设计的ASIC的积分非线性小于 1%。单通道静态功耗约为 536 mW。零输入探测器电容时的等效噪声电荷为2416e-。计数率可达1 MHz 。     

GEM探测器高速数据采集系统设计

介绍了基于以太网的GEM探测器高速数据采集系统的设计。该系统将GEM探测器输出的电荷信号转换为数字信号并写入FPGA进行分析和处理,处理后的数据通过千兆以太网进行传输。主机电脑接收以太网传输的电荷信号的位置信息,绘制电荷信号的位置分布图。实验测试表明:该系统能检测到探测器输出的位置信息并绘制出X射线信号的位置分布图。