衬底及生长工艺对Hg1—xCdxTe液相外延薄膜的影响

用扫描电子显微镜（ＳＥＭ）、能量散射Ｘ射线分析（ＥＤＸ）及Ｘ射线双晶摇摆曲线（ＤＣＲＣ）方法对衬底及Ｈｇ１－ｘＣｄｘＴｅ液相外延（ＬＰＥ）薄膜的生长表面进行了研究。发现采用生长前衬底表面覆盖、回熔ＬＰＥ生长措施，可以防止衬底沾污对液相外延层形貌的影响，大大改善Ｈｇ１－ｘＣｄｘＴｅ外延层的晶体质量。     

Hg1—xCdxTe液相外延薄膜的晶体质量分析

本文用Ｘ－射线双晶遥摆曲线，分析了Ｈｇ１－ｘＣｄｘＴｅ外延薄膜的晶体质量。结果表明，用垂直浸渍液相外延方法生长的Ｈｇ１－ｘＣｄｘＴｅ薄膜，结构均匀性好，晶体质量高，Ｈｇ１－ｘＣｄｘＴｅ外延薄膜表面层的晶体质量，优于其界面层；同时，Ｈｇ１－ｘＣｄｘＴｅ外延薄膜表面层的位错密度，可通过Ｘ－射线双晶遥摆曲线的半峰算得到。     

HgCdTe表面钝化——阳极氟化的初步研究

本文尝试采用非含水的ＮＨ４Ｆ或ＫＦ以及含水的ＫＦ电解质溶液对Ｈｇ１－ｘＣｄｘＴｅ（ｘ＝０．２）表面的阳极氟化进行了研究，着重分析了阳极氟化膜生长的基本过程及其机理，讨论了阳极氟化条件及工艺对薄膜组成及质量的影响。     

PECVD法氮化硅薄膜的研究

本文采用射频等离子体增强化学气相生长法（ＰＥＣＶＤ），在单晶硅衬底上生长氮化硅薄膜，经Ｘ射线衍射测试发现，在（１００）晶向硅片上生长的氮化硅薄膜为（１０１）晶向的外延生长膜。还用红外吸收光谱拉曼光谱和Ｘ射线光电子能谱测试了β－Ｓｉ３Ｎ４的特性，讨论了它在微电子学中的应用。     

低掺铝TiN薄膜的XPS,XRD分析研究

本文用多弧离子镀方法制备了Ｔｉ１－ｘＡｌｘＮ（ｘ＜０．３）薄膜，并且运用俄歇电子能谱（ＡＥＳ），Ｘ射线光电子能谱（ＸＰＳ），Ｘ射线衍射（ＸＲＤ）和扫描电子显微镜（ＳＥＭ）等技术对Ｔｉ１－ｘＡｌｘＮ进行测试和分析。结果表明：膜层中除含Ａｌ、Ｔｉ、Ｎ元素外，还出现了一定量的氧；薄膜呈现了（１１１）、（２２２）等晶面的择优取向；薄膜与基底间的附着力较好。     

超高真空CVD生长锗硅外延层的应变驰豫

用超高真空ＣＶＤ技术在７８０℃生长了锗硅外延层及组分渐变缓冲层，并利用双晶Ｘ射线衍射仪研究了缓冲对外延层晶体质量的影响。结果表明，衬底与外延之间生长了组分几乎线性渐变的缓冲层，提高了外延层的晶体质量。     

BRIDGMAN—Hg_（1－x）Cd_xTe晶体生长时场量数值分析的进展

综述近十余年来关于Ｂｒｉｄｇｍａｎ－Ｈｇ（１－ｘ）ＣｄｘＴｅ晶体生长过程中场量的数值分析工作，评价一般Ｂｒｉｄｇｍａｎ系统的数值分析，总结和归纳计算模型及边界条件处理方法，指出存在的问题及今后应开展的研究工作．     

Hg1—xCdxTel生长中的溶质再分配及其对生长条件的限制

本文以ＨｇＴｅ－ＣｄＴｅ伪二元相图为基础，分析了Ｈｇ１－ｘＣｄｘＴｅ单晶生长过程中分凝特性及扩散规律。从维持平面生长界面的角度出发，确定了不同温度梯度下生长速度选择的上限，并从获得成分均匀晶体的角度出发讨论了晶体生长速度下限的选择条件。     

X射线影像存储材料BaF_xCl_（2－x）Eu~（2＋）的制备及其热释发光和

本文采用了不同温度下两次烧结的新方法，制备了系列Ｘ射线影象存储材料ＢａＦ＿ｘＣｌ＿（２－ｘ）：Ｅｕ￣（２＋）（ｘ＝０．９０，０．９５，１．００，１．０５，１．１０１．１５）。通过改变Ｆ／Ｃｌ比值，研究了在Ｘ射线辐照后ＢａＦ＿ｘＣｌ＿（２－ｘ）：Ｅｕ￣（２＋）的热释发光性质，给出了热释发光峰的温度与缺陷种类的关系。最后，我们研究了ＢａＦ＿ｘＣｌ＿（２－ｘ）：Ｅｕ￣（２＋）的光激励发光性质，给出了Ｆ／Ｃｌ比值与光激励发光强度的关系。     

用乙硅烷及固态锗源外延生长应变GeSi／Si合金

采用气态源分子束外延（ＧＳＭＢＥ）法成功地生长出应变ＧｅｘＳｉ１－ｘ／Ｓｉ异质结合金，所使用的源分别是乙硅烷和固态锗。用固态锗取代气态锗烷，即保留了生长中由氢化物裂解产生的氢原子在生长表面上的活化作用（ｓｕｒｆａｃｔａｎｔ ｅｆｆｅｃｔ），又利用了固态源炉通过挡板能够迅速切断分子束流的优点。样品的Ｘ射线双晶衍射，透射电子显微镜及光荧光测量表明ＧｅｘＳｉ１－ｘ合金具有较好的晶格完整性及平坦的异质结界     

Liquid-phase epitaxy of 2H-SiC film on a (0001) 4H-SiC substrate in Li-Si melt

We first applied a liquid-phase epitaxy (LPE) method to the growth of 2H-SiC to obtain an oriented 2H-SiC layer. The LPE growth was performed on a (0001) 4H-SiC substrate in a Li-Si-C melt at 850 °C. A LPE layer grew on the carbon face of the (0001) 4H-SiC substrate with the area of about 1 × 1 mm². The thickness and morphology of the LPE layer were confirmed by scanning electron microscope (SEM), and the polytype of the LPE layer was determined using a high-resolution transmission electron microscope (HR-TEM) and a Raman spectroscopy. SEM measurements revealed that the thickness of the LPE layer was 50 μm and that this layer developed with a hexagonal shape. HR-TEM observations and Raman spectral analysis showed that 2H-SiC layer grows on 4H-SiC substrate with the relationship of (0001) 2H-SiC (0001) 4H-SiC. In this study, we first succeeded to grow <0001>-axis-oriented 2H-SiC films and concluded that the LPE technique is applicable to the growth of oriented 2H-SiC films in the Li-Si melt.     

电弧侧面金刚石薄膜的沉积

利用磁约束直流等离子体炬设备和Ａｒ＋Ｈ２＋ＣＨ４混合气体，在喷出的电弧侧面的无水冷的ＡｌＮ（氮化铝陶瓷）衬底上，成功的制备出金刚石薄膜。使用扫描电子显微镜、Ｘ射线衍射仪和Ｒａｍａｎ光谱研究了金刚石薄膜形貌、生长速率及质量。     

采用金属镓层氮化技术在石英衬底上生长多晶GaN

随着多晶GaN材料发光研究的不断深入 ,大面积、价格低廉的多晶GaN基光电器件的研制已成为工业生产中一个重要的研究领域。石英玻璃以其自身特有的优势 ,成为生长多晶GaN材料的较为理想的衬底。本文采用一种新的金属镓层氮化技术 ,使用无定形石英作衬底 ,在常压下制备出多晶GaN。经分析测试表明 ,生长出的多晶GaN为六方结构且质量较好 ,并观察到针状的表面结构     

LPE growth of lithium ferrite on spinel substrate crystals

Preliminary results on the growth of lithium ferrite by LPE (liquid phase epitaxy) are described. A PbO-B₂O₃ flux was used with nonmagnetic spinel-structured substrate crystals. Compared with growth of magnetic garnets, the LPE melt was found to be relatively unstable with respect to undercooling. Nevertheless, LPE growth was achieved. All of the epitaxial films grown so far are cracked; however, ferrimagnetic resonance linewidths as low as 7.8 Oe at 9.07 GHz have been measured.     

偏压对磁控溅射沉积Al—Zn镀层成分和结构的影响

采用扫描电镜（SEM）、X射线衍射仪、X射线能谱（EDS）和俄歇电子能谱仪（AES）,研究了基片偏压对磁控溅射沉积Al-Zn镀层组成和结构的影响。随着基片偏压的增加镀层的Zn含量呈降低趋势,在不同基片偏压下可获得不同择优取向的Al-Zn镀层。     

Surface roughness studies on 4H-SiC layers grown by liquid phase epitaxy

The surface roughness on 4H-SiC layers grown by LPE was systematically studied. The surface morphology was investigated by scanning electron microscopy and atomic force microscopy. Depending on the substrate orientation two different types of growth morphology were found: terraced and step flow growth. The height of growth steps was found to depend on the angle of the substrate off-orientation. The higher the degree of substrate off-orientation the higher the step height. The terrace height depends on the impurity concentration in LPE layers. With the decrease of the impurity level, the terrace height has been significantly decreased.     

The simultaneous multiple dipping of magnetic bubble garnets

The simultaneous growth of LPE films on two-inch diameter Gd3Ga5O12substrates with nominal film compositions in the (YLuSmCa)3(FeGe)5O12system is studied. The effective distribution coefficients of Ca²⁺-Ge⁴⁺, Y³⁺, Lu³⁺and Sm³⁺are discussed and related to the magnetic property variations observed as a function of film growth rate. The approaches for material property control are evaluated and examples given of expected property variation within a stack of epi wafers grown under constant thickness or constant growth rate conditions. A design is shown for a 18 at-a-time and a 30 at-a-time growth holder. Data is presented to indicate the radial thickness uniformity, thickness, saturation magnetization, collapse field and anisotropy field variation typically observed in multiple substrate film growth. A technique for minimizing flux caused mesa formation is evaluated. with comparative data showing the effectiveness of this technique.     

在p-Si(100)上溅射法生长ZnO的结构和光学特性

室温下在ｐ－Ｓｉ（１００）上采用直流反应磁控溅射法外延生长了ＺｎＯ薄膜。ＸＲＤ测量表明了ＺｎＯ是高度ｃ轴单一取向生长的,ＸＲＣ测量则表明了ＺｎＯ的高质量在室温下的ＰＬ测量中见到了带边发射,其强度与晶体质量有关。     

平面光波导膜的ECR-PECVD制备及特性研究

采用微波电子回旋共振等离子体增强化学气相沉积技术 ,在单晶硅衬底上制备了用于平面光波导的SiO2 薄膜 ,研究了沉积速率与工艺参数之间的关系 ,并对射频偏置对成膜特性的影响作了初步实验研究。通过X射线光电子能谱、傅立叶变换红外光谱、扫描电镜、原子力显微镜、以及扫描隧道显微镜三维形貌和椭偏仪等测量手段 ,分析了样品的薄膜结构和光学特性等。结果表明 ,在较低温度下沉积出均匀致密、性能优良的SiO2 薄膜。此外 ,还成功制备出掺Ge的SiO2 薄膜 ,并可以精确控制掺杂浓度 ,以适应不同光波导芯的要求