共查询到17条相似文献,搜索用时 109 毫秒
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本文介绍了通信技术和通信电路的发展情况,论述了通信技术和通信电路与通信LSI/VLSI发展的密切关系以及通信电路技术的特点;并通过实例说明通信LSI/VLSI中典型的电路和技术。 相似文献
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本文提出一种适用于LSI/VLSI任意元胞布局的K行安置的算法。当矩形单元的拓朴位置确定后,每个单元有横放、竖放两个态共有2n个态。在K行安置时,从这2n个态中选出包络矩形面积最小的问题,可归结为求n个态中的包络矩形面积最小,所以是很有效的算法。可以和结群法混合使用;在一定条件下,还可以直接用于准BBL布局。 相似文献
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LSI/VLSI布线的退火模拟算法的研究与实现 总被引:2,自引:2,他引:2
本文研究并提出了优化程度较高的退火模拟门阵列总体布线及平行通道区布线算法。算法已用FORTRAN语言实现并作为自动布图系统的组成部分成功地运行在Dual83/20微机上。 相似文献
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LSI公司近期在纽约召开的Goldman Sachs & Co.技术会议上向分析家们提前展示了其将于1998年推出的下一代CMOS工艺G11。它采用0.25微米单元结构,具有混合采用性能优化单元和面积优化单元的能力,并且采用层次化的金属布线结构以适应下一代的综合工具,因此这套工艺具有一些特别优秀的内在特 相似文献
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功耗已成为超大规模集成电路所面临的最大技术挑战之一.这就需要在不断满足设计要求的同时,不断提出新的方法来降低功耗.文章首先概述了VLSI的功耗问题,进而提出了VLSI功耗的来源,最后提出了降低CMOS集成电路功耗的技术与方法. 相似文献
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In this paper, aK-line location algorithm for building block cells in LSI/VLSI is presented. When the relative positions of rectangular cells
are given, there are 2 states according to the two orientations of a cell. It is proved that to find the optimum solution
from the 2N states can be reduced to calculate theN states inK-line algorithm. So the algorithm is shown very effective and can be used with association for cluster method in BBL placement.
Under certain conditions, this method can also be used to pesudo BBL placement directly. 相似文献
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In this paper,a K-line location algorithm for building block cells in LSI/VLSI ispresented.When the relative positions of rectangular cells are given,there are 2 states accordingto the two orientations of a cell.It is proved that to find the optimum solution from the 2~N statescan be reduced to calculate the N states in K-line algorithm.So the algorithm is shown veryeffective and can be used with association for cluster method in BBL placement.Under certainconditions,this method can also be used to pesudo BBL placement directly. 相似文献
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低功耗CMOS逻辑电路设计综述 总被引:9,自引:1,他引:9
分析了CMOS逻辑电路的功耗来源从降低电源电压、减 上负载电容和逻辑电路开关活动几率等方面论述了降国耗的途径。讨论了深亚微米器件中亚同值电流对功耗的影响以及减小亚阈值电流的措施,最后分析了高层次设计对降低功耗的关键作用,说明低功耗设计必须从设计的各个层次加在考虑,实现整体优化设计。 相似文献
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An Ag/Se-Ge inorganic resist technology is applied to photolithographic processes in LSI fabrication. This paper describes exposure latitude, RIE characteristics, resist fabrication and exposure throughputs, pattern alignment, defocus tolerances and fabrication yields of Al interconnection.Lateral Ag diffusion does not effectively improve the exposure tolerance. The technology exhibits good compatibility with other equipment and technologies, offering satisfactory throughput. Excellent accuracy in pattern alignment is obtained owing to dry-deposition fabrication and the suitable optical properties of the Se-Ge inorganic film, which result in regulated and distinct alignment signals. Defocus tolerance in the resist is larger than that of polymer resist by 2 ∽ 3 μm in the submicron pattern. Al interconnections using this resist demonstrate a short-circuit failure rate of less than 1% and small variation in linewidth having a standard deviation of σw = 0.08 μm.In practical processes, the significant advantages of this resist are its bilayer resist structure (doped Ag-Se-Ge and underlying Se-Ge) and its dry deposition, very thin, favorable optical characteristics. 相似文献
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