平面电磁型微电机定转子制作工艺

为了在平面微电机有限大尺寸的定子上制作大深宽比结构的绕组线圈,对大深宽比微结构的制作工艺进行了研究,综合比较各方面因素,从中找出了成品率高、可重复性好、工艺步骤简单的平面线圈的制作工艺,即在Si沟槽里通过微电铸得到大深宽比平面铜线圈的深刻蚀成型电铸工艺;分析了光刻工艺关键参数之间的关系及对后续工艺的影响。通过该工艺制作的直径10mm定子线圈深宽比较大(宽40μm、深80μm),且无空洞。该工艺有很大的深宽比挖掘潜力,也可应用在其他需要较大深宽比平面线圈的微执行器的制作中。     

平面微电机定子线圈制作工艺研究

为了在平面微电机有限大尺寸的定子上制作高深宽比结构的绕组线圈,对高深宽比微结构的制作工艺进行了研究,综合比较各方面因素,从中找出了成品率高、可重复性好、工艺步骤尽量简单的平面线圈制作工艺,即在硅沟槽里通过微电铸得到高深宽比平面铜线圈的深刻蚀成型电铸工艺,并分析了光刻工艺关键参数之间的关系及对后续工艺的影响。通过该工艺制作的直径为10 mm的定子线圈深宽比大(宽40μm、深80μm),无空洞,并且在工艺上还有很大的深宽比挖掘潜力。该工艺亦可应用于其他需要高深宽比平面线圈的微执行器的制作中。     

电镀法制作活动微结构的牺牲层工艺

报道了一种采用电镀方法制作活动微结构的牺牲层工艺，该牺牲层技术可用于微电子机械装置中活动部件的制作。利用电镀形成Ｚｎ牺牲层，结合微细加工技术中的ＬＩＧＡ工艺对该工艺进行了验证，制作出可活动的微齿轮结构，齿轮直径为２５０μｍ。     

商品有机玻璃片微结构的深刻蚀研究

研究应用O2反应离子刻蚀(RIE)直接深刻蚀商用有机玻璃(PMMA)片，以实现微结构的三维微加工，工艺简单，加工成本较低，为微器件的高深宽比加工提出了新方法。试样采用Ni作掩膜，以普通的光刻胶曝光技术和湿法刻蚀法将Ni掩膜图形化。工作气压、刻蚀功率等工艺参数对刻蚀速率影响较大。在刻蚀过程中，掩膜上的金属粒子会被刻蚀气体离子轰击而溅射散落出来，形成微掩膜效应。利用这种RIE技术，在适当的溅射功率及气压下，刻蚀速率较快，且获得了较陡直的微结构图形，刻蚀深度达120μm。     

四靶双离子束溅射仪制备软X光衍射色散元件

用四靶双离子束溅射仪一体化制备软Ｘ光衍射色散元件，宽束平行离子源刻蚀光栅，宽束聚焦离子源镀制软Ｘ光多层膜，经ＳＥＭ、ＴＥＭ、ＦＣ数字化图像处理和效率测试等测试手段分析，结果表明所制备器件具有良好的结构和衍射特性。     

微光机电系统的微绞链研制

本文讨论了非硅微机械工艺和微绞链的研制工艺。我们研制的非硅表面微机械工艺采用两次或三次掩模电镀层，聚酰亚胺和光刻胶分别作为底层和第二、第三层的牺牲层。用这套工艺，研制成功了三种不同种类的微绞链。微绞链能在基片表面作０—１８０度自由转动。     

一种硅微机械陀螺制造方法研究

给出了一种硅微机械陀螺制造方法,该方法可适用于各种不同的微机电系统(MEMS)器件,包括加速度计、剪切应力传感器及MEMS光开关等。利用该方法制备了硅微机械陀螺,并给出了该陀螺的性能测试结果。同时分析了利用该方法制备各种不同器件时,工艺流程对器件性能的影响,重点讨论了硅-玻璃阳极键合、减薄工艺及深刻蚀所形成的侧壁质量,包括侧壁垂直度、侧壁杂质等因素对器件性能的影响。     

多层瓷介电容器端电极制备工艺研究

为了得到小尺寸、高焊接可靠性的多层瓷介电容器,分别采用蘸浆端涂工艺和薄膜溅射工艺进行端电极制备,研究了两种端面金属化工艺的优缺点及其制备端电极的焊接可靠性.结果表明:与传统端涂工艺相比,蘸浆端涂工艺不仅彻底地摆脱了对于高精度封端设备和工装夹具的依赖,生产成本较低,而且更适用于小尺寸产品端电极的制备;同时,薄膜溅射工艺制...     

一种接触质量高和兼容特性好的金属-量子点-金属结构的自对准制备方法

我们报道了一种“金属-量子点-金属”结构的自对准制备方法。该方法主要包括“电子束曝光-薄膜淀积-刻蚀”工艺,具有套刻容限大、开发周期短以及可兼容多种材料等优点,尤其适用于具有类似结构的纳米器件制备。该方法中使用的牺牲层工艺和强化版图,降低了剥离工艺的难度,提升了可制备器件结构的力学强度。最后,作为应用实例,我们用该方法制备了尺寸为 255 nm × 45 nm × 30 nm（ 长 × 宽 × 高)的相变节点。     

等离子体刻蚀对CdTe太阳电池性能的影响

采用不同干法腐蚀条件下的CdTe薄膜制成器件, 通过I-V、C-V和光谱响应等测试 了电池性能参数。结果表明,溅 射时间太短和功率太小时不能完全去除氧化层,溅射时间过长和功率过高会对薄膜表面造成 损伤, 影响器件性能。 通 过选择器件性能较好的电池、 找出适合等离子束溅 射工艺的条件,所制成的电池转化效率 达 到10.99%;而湿法腐蚀所 制成器件的转化效率为 10.26%。由此可以认为,等离子束轰击溅射的 腐蚀方法较湿法腐蚀更适用于CdTe太阳电池的制备。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.