一种工作于0.5~2GHz的小型化Vivaldi天线

设计了一种用于浅层冰盖探测的小型化宽带Vivaldi天线,该天线使用微带转槽线的巴伦馈电,可工作于500MHz～2GHz的带宽之内.天线采用共面结构,能够有效降低交叉极化电平.为提高天线的增益并避免低频端方向图端射方向出现凹陷,使用了较厚的介质基片,并增加了天线的长度,但天线的尺寸仍只有345mm×263.7mm,仿真得到的天线增益在全频带内大于2.8dBi.测量得到的阻抗带宽(驻波比≤2)达到1.94GHz,与仿真结果较为吻合.测试得到的E面和H面归一化方向图在大于800MHz的频带内与仿真结果一致性较好.     

低剖面渐变槽线天线单元设计

基于有限元仿真软件通过设置周期性边界条件的方法,分析了影响渐变开槽天线单元宽带宽角扫描性能的关键因素。通过在安装天线阵列的反射面上铺覆新型阻抗匹配材料,克服了天线高度对驻波带宽的限制,实现了天线的小型化设计。加工制作了一个20×16天线单元的实验小型面阵,并对其有源扫描驻波进行了测试。实测结果与仿真结果吻合,表明该天线在8GHz～12GHz带宽内±45°扫描范围内性能优异,可广泛应用于宽带宽角扫描相控阵天线系统。     

一种共形宽带UF天线的仿真

文章提出了一种短波通讯宽带共形线天线,并利用CST软件仿真计算,经过集总元件的加载和对集总元件参量进行优化,拓宽了天线的工作带宽和降低了天线的反射系数,得出天线在230-380MHz频率下的反射系数、输入阻抗、电压驻波比、辐射方向图。本天线具有小型宽带、平面共形特点,可加载于车辆、舰艇、飞机等移动载体上。     

Ka频段双圆极化相控阵天线设计

设计了一个8×8的Ka频段双圆极化相控阵天线。该天线单元采用正交缝隙耦合馈电的多层贴片微带天线,并由一个小型化宽带3 d B枝节电桥实现双圆极化。为提高天线圆极化性能,依次旋转天线单元,形成2×2双圆极化天线子阵。以天线子阵为基础,扩展成8×8相控阵天线。HFSS仿真结果表明,天线在方位360°俯仰±60°范围内进行双圆极化扫描,轴比小于3 d B,且轴比带宽达30%。该研究结果可应用于卫星通信的双圆极化相控阵天线的设计。     

渐变槽线天线的参数分析与设计

研究了渐变槽线宽带宽角扫描天线阵列的关键参数进行了研究,提出了2种新的改善扫描驻波的方法对渐变槽线天线的研究.一是天线单元内部的结构参数,包括带状线开路段、圆形槽谐振腔、槽指数率、槽长度;另一个方面是阵列中的排布,包括阵列栅格距离、栅格形状.仿真分析借助HFSS进行,最后给出了结果,带宽大于3:1,E面H面扫描角大于45°.     

一种用于WLAN的小型双频宽带印刷单极天线

设计了一种满足WLAN双频工作所需的小型共面波导馈电的双频宽带印刷单极子天线单元.该单极子天线的设计采用了在倒锥形单极天线顶部添加半圈矩形螺旋枝节的结构,使其获得了小型化和双频宽带的性能.采用基于共面波导的馈电方式,天线单元具备宽带匹配、结构简单、制作方便和易与其它无线通信设备集成等优点.仿真和实测结果表明,设计的天线单元在WLAN应用的高、低频段上10dB阻抗带宽分别约为2100MHz(4.52～6.62GHz,约37.7%)和220MHz(2.27～2.49GHz,约9.2%),增益在2～3dBi之间;在相应工作点辐射波瓣图上全向性较好.该天线能满足WLAN应用所需,具有较高的工程应用价值.     

一种超宽带长槽阵列天线单元设计

针对地面对长槽阵列天线阻抗带宽的影响问题,设计出一种在激励偶极子上实施加载的超宽带长槽天线,其阻抗匹配带宽显著增加,最终得到了超过3. 5:1 的阻抗匹配带宽;在扫描范围内具有稳定辐射特性。该天线具有超带宽、剖面低、易共形等特点,在超宽带小型化相控阵天线中有良好应用前景。     

非相似元四倍频程相控阵天线

对数周期天线是一种宽带天线 ,单个天线单元的带宽可以很宽 ,但其宽带特性在组阵时将受到一定的影响 ,在相控阵中更受到扫描角的限制 ,文中采用非相似元的方法有效地解决了四倍频程相控阵天线扫描时宽带和宽角的矛盾 ,扩展了对数周期天线在相控阵中的应用     

一种基于DGS的宽带双极化三角元微带天线

本文设计并研制了一种含缺陷地板结构(DGS)的宽带双极化等边三角形微带天线单元.通过在贴片天线地板上刻蚀圆孔实现DGS结构.天线工作在2.4GHz频率上,VSWR≤2的带宽为7.2%,绝对带宽173MHz,比不带DGS结构的同类天线带宽增加60MHz.     

一种宽带小型化相控阵单元的设计

设计了一种带自校准功能的宽带小型化的微带vivaldi相控阵天线单元,通过多层板压合的方式实现了天线辐射单元与自校准网络的一体化加工要求,采用在非辐射边增加曲流槽的方法提高了天线在低频段的增益,同时减小了低频驻波,通过增加两单元之间隔离的方式和馈电位置降低了天线宽角扫描的有源驻波,设计的单元在全频带内具有良好的驻波和辐射特性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.