峰值电流模式降压DC／DC变换器芯片设计

设计了一种基于UMC 0.6μm BCD工艺的降压DC/DC转换芯片.采用固定频率脉宽调制(PWM)、峰值电流模式控制结构以提供优良的负载调整特性和抗输入电源扰动能力;在电流检测输出加斜坡补偿消除峰值电流模式次谐波振荡;设计增益较高、带宽较大的电压反馈误差放大器以提供大的负载调整率和提高负载的瞬态响应能力;设计高单位增益带宽的PWM控制器以适应高开关频率工作的要求,同时提高转换效率.系统仿真结果表明,在4~20 V的输入电压范围内,芯片的开关频率为600 kHz,开关电流限制值为1.8 A,典型应用下转换效率高达90%,并具有良好的抗输入扰动和负载调整能力、快速的瞬态响应能力、小的输出纹波等特点.     

一种峰值电流模式下的轻载高效Buck转换器设计

提出了一种峰值电流模PWM下的轻载高效Buck DC-DC控制方案,该方案采用了峰值电流开关和采样保持电路,实现宽负载范围内很高的转换效率.其中峰值电流开关用以检测负载电流大小,作为轻载或者重载模式的判定;采样保持电路会在轻载模式下工作,通过控制误差信号的变化量来循环开启或者关闭转换器,完成对转换器的开关频率调制.采用0.5μm BCD工艺,仿真结果显示在输入电压12V,输出电压3.3V下,最高有96%的转换效率,而在10mA负载下依然能保持80.3%的转换效率.     

一种高性能DC-DC升压变换器的设计

设计了一种内部集成控制电路和DMOS功率开关管的单片集成电流型PWM升压变换器。该芯片的开关频率为1.6 MHz,采用1.5μm BCD工艺实现,具有很宽的输入电压范围(2.7~14 V)、高转换效率(负载电流1~500 mA)。给出了芯片设计方法、思路及主要单元电路模块,如振荡器、输入比较、PWM比较及过温保护电路,的设计方案,总结了该芯片设计中应注意的次谐波振荡和开关噪声问题。仿真及实验测试结果充分验证了芯片的各项性能。     

电流模式脉宽调制直流-直流同步降压转换电路的设计

文章设计了一种电流模式脉宽调制直流-直流同步降压转换电路,输入电压可达40V,输出电流可达2A,开关频率350kHz。电路运用片上电流采样,结合分段斜率补偿,该峰值电流模式脉宽调制控制,获得了相当好的线性和负载调整率,以及较快的负载动态响应速度。在整个负载电流范围内(200mA～2A)内其具有高转换效率。     

轻载高效BUCK转换器的负载自适应控制方案

提出一种适用于电流模式降压型DC-DC转换器的负载自适应方案(LAM).该方案在宽负载范围内具有高效率.采用误差信号与负载自适应的门限做比较,判定转换器工作模式,根据负载电流的大小使开关工作在PWM模式或轻载模式.在轻载模式下,通过循环开启或者关闭振荡器来降低转换器的开关频率,减少开关损耗和静态功耗.对负载自适应阈值,电感峰值电流和负载电流之间的关系进行了分析和推导.采用0.5μm BCD工艺,仿真结果显示在输入电压12V,输出电压3.3V,负载较轻时,转换器进入LAM模式,转换效率大大高于同样负载下的PWM模式,特别是在ILoad=10mA时,PWM模式的转换效率只有45.6%,而LAM模式的转换效率棕80.1%.     

轻载高效Buck转换器设计及其纹波控制方案

提出了一种峰值电流模式PWM下的轻载高效Buck DC-DC控制方案。该方案根据负载大小来自适应调节开关频率和电感电流峰值,实现宽负载范围内高的转换效率和对输出纹波的控制。把误差信号与负载自适应的门限相比较,以判定转换器工作模式。在轻载模式下,通过循环开启或者关闭振荡器来降低转换器的开关频率,降低开关损耗。详细推导了在保持输出电压纹波不变的情况下,负载自适应门限与负载大小之间的关系,并在典型应用下得到二者呈线性关系的结论。采用0.5μm BCD工艺进行仿真,结果显示,在输入电压12 V,输出电压3.3 V下,轻载时最高有94.2%的转换效率,在负载从10 mA到500 mA变化时,轻载模式纹波为120~140 mV,与理论分析的控制纹波130 mV较为符合。     

一种基于ACOT的Buck型开关电源设计

基于自适应恒定导通时间(ACOT)控制方式,设计了一种恒频效果良好的降压型DC-DC转换器。该转换器采用V²COT架构,兼具输出精度高和瞬态响应速度快的特点。采用一种改进的自适应导通时间控制方式,降低了负载电流对开关频率的影响,使转换器在连续导通模式(CCM)下具有良好的开关频率稳定性。基于东部高科0.15μm BCD工艺完成流片,芯片输入电压为4.5～17 V,输出电压为0.76～7 V,最大负载电流为3 A,开关频率为1 MHz。测试结果表明,在CCM下,开关频率随输入电压变化率为2.67 k Hz/V,随负载电流变化率为2.95 k Hz/A,峰值效率达96.43%,输出电压纹波为8.2 m V,负载调整率为0.93%,负载瞬态响应时间小于20μs。     

一种峰值电流模两相交错Buck转换器

提出了一种降压型两相交错直流转换器。与传统单相转换器相比,该两相转换器具有输出纹波低、瞬态响应快、重载效率高等特性,适合为多核处理器供电。采用峰值电流模式,基于公共电压反馈回路及峰值电流信息,实现两相支路电流的均衡。依据负载电流范围自动选择运行支路个数,保证转换器在整个负载范围内具有高转换效率。基于TSMC 0.18 μm工艺进行设计,电源电压范围为2.7~5 V,支持330 nH~1 μH的小封装电感,最大电流驱动能力为5 A。仿真结果显示,在输入电压为4.2 V,输出电压0.9 V的条件下,整个负载范围内转换器的峰值效率为86%,最大稳态输出纹波低于2 mV,在5 A/1 μs负载瞬变条件下,负载调整率不超过28 mV/A。     

基于电荷泵的低压启动高效率Boost DC/DC变换器设计

设计了一种在供电电源电压稍高于MOS管阀值的超低压条件下就能正常工作的宽输入电压范围的DC/DC变换器。电荷泵的启动模块和Boost升压模块集成于同一芯片中,在电压低于2.2V（typical）时,芯片包括两部分的工作过程,首先由电荷泵的启动模块使电压升高至2.2V,然后由输出电压为Boost转换器模块供电,使芯片正常工作。输入电压高于2.2V时,只有Boost模块工作。为使芯片实现高效率的转换,在轻载情况下,采用PFM调制模式;在重载情况下,采用PWM调制模式;通过逻辑控制两种模式自动切换,实现了良好的负载调整率。芯片采用SMIC 0.5um CMOS工艺设计并流片测试,在0.83V的电源电压时,芯片能正常启动工作。在电压VIN=1.2V,VOUT=3.3V时,最大效率达到87%,所有电压和负载范围内效率不低于50%。该芯片可用于单电池供电的系统中。     

单片集成直流-直流转换器的效率提高方法

采用SMIC 0.13μm CMOS工艺,设计实现了开关频率达到250 MHz,单片集成的降压型电源转换器。为了提高电源转换效率,该转换器中的片上电感采用非对称性设计方法,提高了电感的品质因数。采用了高密度片上滤波电容来稳定输出电压,同时对单位电容尺寸的优化设计减小了电容的等效串联电阻以及输出电压纹波。测试结果表明,芯片输入电压为3.3 V,当输出2.5 V电压时,峰值效率达到了80%,最大输出电流达到270 mA;当输出1.8 V电压时,峰值效率达到了70%,最大输出电流达到400 mA。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.