电缆用异形铜导体直流电阻影响因素及控制措施

20℃时导体直流电阻作为主要的电性能指标,其达标对电缆产品质量至关重要。相对于电缆用常规圆形导体,电缆用异形导体的结构形状和加工工艺具有一定特殊性,这使其导体直流电阻的工艺控制与准确测试更为困难。通过对异形铜导体生产和测试过程中影响导体直流电阻诸多因素(导体原材料、单丝直径、绞合节距、截面积、成型模具、制样过程、测试设备、测试操作方法、测试环境温度)的深入分析,提出了相应的控制措施。希望以此提高电缆用异形铜导体直流电阻的达标率和测试准确率。     

导体直流电阻检测设备检测能力的评价及改进

0引言 导体直流电阻是电线电缆重要的性能测试项目之一,所测得的数据将直接影响对电线电缆使用安全性的判定,因此导体直流电阻测试数据的准确与否非常关键.在实际检测中发现由于各类检测设备检测能力的不同,导致对同一线缆的导体直流电阻测试值有所偏差.为了提升对产品的检测水平,从而保证产品的质量,对所用各类导体直流电阻检测设备的检...     

在固定敷设电缆中采用实心铝导体的探讨

传统的绞合结构铝导体存在易氧化、电阻率增加、机械强度下降等现象,直接影响了电缆的使用寿命和铝材在电缆行业的广泛应用。通过工艺改进,能够克服铝导体的上述缺点,建议在固定敷设电缆中广泛采用实心铝导体。     

铝合金导体紧压绞合工艺的控制

正0引言铝合金材料通过添加多种金属元素,使合金材料的电气性能、机械性能、抗蠕变性能达到最佳效果。铝合金导体电缆可彻底解决传统铝芯电缆在应用过程中易蠕变、易断裂、连接可靠性低等缺点,从而在配电系统中得到更广泛地应用。作为铝合金电力电缆的核心,铝合金导体的质量主要与导体生产工艺密切相关,包括模具的选择、绞合工艺控制等。如果铝合金导体模具选择有误、绞合工艺控制不佳,则难以保证电缆产品的质量,并且会产生严重浪费。     

电缆用第5种软铜绞合导体外径的计算方法

1两种外径计算方法 第5种软铜绞合导体柔软、易弯曲,可广泛用于矿用橡套电缆、船用电缆、通用橡套电缆和软结构电力电缆等有特殊要求的软电缆中。第5种软铜绞合导体的单丝较细,且其绞合方式是先束绞（即非规则绞合）,再复绞（即规则绞合）,这使得第5种软铜绞合导体不宜定型,较难计算最终的导体外径。目前常用的第5种软铜绞合导体外径的计算方法有正规同心式绞合单线外径计算法（方法1）和束丝外径计算法（方法2）两种。     

浅谈3000mm~2分割铜导体的设计及检测

主要讨论了3 000mm2分割铜导体结构设计思路及检测方法,针对相关标准中尚无3 000mm2铜导体直流电阻界定与测量方法的困局,提出了一种适用于3 000mm2分割铜导体直流电阻的测试方法及夹具。     

导体阻抗的频率特性

以圆横截面导线、矩形横截面扁平导体条为对象,详细综述了导体阻抗的频率特性,及导体直流电阻与交流电阻的关系,介绍了导体条横截面的几何形状对其电感量大小的影响,指出了搭接条尺寸的选择原则.     

T型软铝线挤出工艺的探讨

0引言 采用异形紧压导体结构可使高压电缆导体获得较高紧压系数,进而减小电缆的外径,降低电缆的成本,提高电缆的生产效率.在众多异形紧压导体中由T型型线绞合紧压制得的紧压导体的紧压系数尤为优异.铝及铝合金电缆成本及其特殊的性能优势使之在高压电缆领域迅速推广,但同时也迫使传统生产工艺的改进.T型软铝线挤出工艺就是其中亟待研究...     

改进的光缆导体SZ绞合法

对熟知的绞合方法的分析表明:利用同步转筒的改进型SZ绞合法最能满足所有产品对光缆导体绞合方面的特定生产要求。安装在退线线筒与SZ馈入装置之间的长度补偿器,同步地调节按这种原理工作的绞合机中单根导体的速度不均匀性。这种方法的生产速度比一般生产方法的速度要高。     

铝塑料护套电缆实际屏蔽系数的计算

一、引言在我国,塑料外皮铝护套电缆的应用日益广泛。由于塑料外皮的绝缘电阻很高,所以铝护套必须进行分段间隔接地。这样一来,铝护套便成了一个多点接地的屏蔽导体,它和铅包电缆对地分布漏导的情况是不同的。目前通用的铝塑料护套电缆实际屏蔽系数的计算公式,是假定各处接地电阻和接地间隔相等,用数学方法所求得的解析式。下面介绍当遇到各点接地电阻和接地点之间的间隔全不相同时,铝塑料护套电缆实际屏蔽系数的计算。     

大截面空心扩径导线的安装及质量验收

大截面空心扩径导线由于外径的扩大,使其在运行中具有减少导线表面电场强度、减小无线电干扰、载流量大且节能环保等众多优点,是超高压和特高压输电线路工程的重点产品。但空心扩径导线的特殊结构,也使其安装有别于普通的钢芯铝绞线的安装。为此,对大截面空心扩径导线的安装过程以及安装质量验收规范进行了详细介绍。     

50Ω皱纹铝管外导体射频同轴电缆的研制

简述了50Ω皱纹铝管外导体射频同轴电缆的研制,着重介绍了其生产工艺难点。该电缆的实测性能表明,皱纹铝管外导体射频同轴电缆可替代同规格的皱纹铜管外导体射频同轴电缆用于移动通信市场。     

铜包铝线电缆在广电中的应用

通过对铜包铝线同轴电缆与铜导体同轴电缆的特性阻抗、低频电阻率、温度特性、衰减特性、回波损耗等性能参数的比较,论证了75Ω铜包铝线同轴电缆应用于有线电视网络、第一中频传输系统的工程可行性。     

Effect of surface treatment on electromigration in aluminum films

Surface treatment methods for educing aluminum electromigration are studied. Simple methods for reducing aluminum electromigration have been found. Oxygen-plasma treatment and a H₂O₂ dip after aluminum patterning are shown to improve conductor life with respect to electromigration. By the oxygen-plasma treatment, the mean times to failure is improved more than two time over that for the current method. This improvement of life is a function of the oxygen-plasma treatment time and is affected by aluminum annealing and the material used for passivation. By H₂O₂ dip treatment, the mean time to failure is improved more than three times over that obtained using the current method. This improvement of life depends on the aluminum area exposed to the H₂O₂ dip. The improvement of conductor life due to surface treatments can be explained by suppression of the aluminum surface and/or grain diffusivity due to oxidation of the aluminum surface     

Aluminum conductor failure due to thermal expansion by power pulses

It is found that an aluminum conductor can fail due to a thermal stress caused by periodically applying rectangular power pulses to semiconducting devices that generate heat internally. The mean time to failure due to this process is calculated. The agreement between the calculated values and the experimental data is good.     

碳纤维复合芯导线在连续档下应力及弧垂的计算

碳纤维复合芯导线作为一种全新结构的节能型增容导线,具有重量轻、强度大、弧垂小、载流量大等一系列优点,在扩容改造工程中得到广泛应用,创造了巨大的经济效益和社会效益。碳纤维复合芯导线的弧垂优势主要体现在导线运行温度达到拐点温度后外层导电铝承受的机械应力全部转移到内层线膨胀系数极小的碳纤维复合芯上。介绍了碳纤维复合芯导线在设计选型时拐点温度以下及拐点温度以上的应力及弧垂计算方法,并通过实例计算展示碳纤维复合芯导线拐点温度以上的弧垂优势。     

Design-technology-reliability interactions in Al/CVD-SiO2 multilayer IC's

A multilayer conductor-insulator technology suitable for semiconductor memories has been developed utilizing materials and fabrication techniques compatible with high density LSI structures. Interactions between failure modes, structure design, and process design are presented. Both aluminum-silicon contact windows and interlayer (via) conductor windows must be sloped with appropirate contours to avoid discontinuous metal coverage. The processing involves compatible compositions of multicomponent oxides and a via delineation etch which permits extensive oxide removal without a simultaneous aluminum attack. Intra- and inter- connects are formed from electron beamed aluminum films deposited in a planetary system onto substrates at 300°C (room temperature for first level conductors in a CMOS structure). Desirable film properties include relatively large grain size, low hillock density and complete step coverage. Insulator layers are formed by the chemical vapor deposition of SiO₂ as a product of the oxidation of silane gas. The dielectric protrusions over aluminum hillocks are exaggerated. In addition, bulbous glass is formed over the edges of aluminum stripes unless these intraconnects have a trapezoidal cross-section. This configuration is formed with an H₃PO₄-HNO₃-HAc aluminum delineation etch. Glass-enhanced aluminum hillocks can cause both intraconnect opens and interlayer shorts during conductor and via etching unless compensating topographic/photoengraving design rules are observed.     

Electromigration failure modes in aluminum metallization for semiconductor devices

Two wear-out type failure modes involving aluminum metallization for semiconductor devices are described. Both modes involve mass transport by momentum exchange between conducting electrons and metal ions. The first failure mode is the formation of an electrically open circuit due to the condensation of vacancies in the aluminum to form voids. The second is the formation of etch pits into silicon by the dissolution of silicon into aluminum, and the transport of the solute ions down the aluminum conductor away from the silicon-aluminum interface by electron wind forces. The process continues until an etch pit grows into the silicon to a depth sufficient to short out an underlying junction.     

A thermo-mechanical study on the electrical resistance of aluminum wire conductors

From the standpoint of electrical performance, the objective of a wire conductor is to transmit signals efficiently from one point to another. When the clock frequency trends faster, the high frequency signals on the wire conductor exhibit propagation delay, signal distortion and some symbiosis noise problems. These noises are related to the resistance, capacitance and inductance of the wire conductors. The major goal of this research is to propose a mathematical model to predict the unit change in resistance of aluminum wire conductors used in wire bonding technology in various surrounding temperatures and stress–strain states. The constitutive equation of wire conductors and the working principle of strain gages were used to derive the mathematical model. The experimental investigations involved three environmental temperatures (25, 50 and 80 °C) and two strain rates (1 and 3 mm/s) were employed to confirm the validity of the mathematical model. In the elastic range and the initiation of the plastic range, the variations in the electrical resistance of aluminum wire conductors are dominated by the thermal effect. The tensile strain replaces the thermal effect within the later half of the plastic range, however. We also proposed the electrical resistance charts of aluminum wire conductor that can be applied the variations into the electronic circuit and system simulation software (such as SPICE, PSPICE, etc.) to produce access simulations of the electrical circuits in package design.