14W X波段AlGaN/GaN HEMT功率MMIC

报道了研制的SiC衬底AIGaN/GaN HEMT微带结构微波功率MMIC,芯片工艺采用凹槽栅场板结构提高AlGaN/GaNHEMTs的微波功率特性.S参数测试结果表明AlGaN/GaN HEMTs的频率特性随器件的工作电压变化显著.研制的该2级功率MMIC在9～11GHz带内30V工作,输出功率大于10W,功率增益大于12dB,带内峰值输出功率达到14.7W,功率增益为13.7dB,功率附加效率为23%,该芯片尺寸仅为2.0mm×1.1mm.与已发表的X波段AlGaN/GaN HEMT功率MMIC研制结果相比,本项工作在单位毫米栅宽输出功率和芯片单位面积输出功率方面具有优势.     

S波段35W GaN功率MMIC

报道了一款采用两级拓扑结构的2～4 GHz宽带高功率单片微波功率放大器芯片.放大器采用了微带结构,并使用电抗匹配进行设计,重点在于宽带功率效率平坦化设计.经匹配优化后放大器在2～4 GHz整个频带内脉冲输出功率大于35 W,小信号增益达到22 dB,在2.4 GHz频点处峰值输出功率达到40 W,对应的功率附加效率为3...     

6～18 GHz宽带GaN功率放大器MMIC

报道了一款采用三级拓扑结构的6～18 GHz宽带单片微波功率放大器芯片.放大器采用了微带结构,并使用电抗匹配进行设计,减小输出匹配电路的损耗和提高效率.经匹配优化后放大器在6～18 GHz整个频带内脉冲输出功率大于6 W,小信号增益达到25 dB,在14 GHz频点处峰值输出功率达到10 w,对应的功率附加效率为21%...     

X波段GaN单片电路低噪声放大器

采用0.25μm GaN HEMT制备工艺在AlGaN/GaN异质结材料上研制了高性能X波段GaN单片电路低噪声放大器.GaN低噪声单片电路采取两级微带线结构,10V偏压下芯片在X波段范围内获得了低于2.2 dB的噪声系数,增益达到18 dB以上,耐受功率达到了27 dBm.在耐受功率测试中发现GaN低噪声HEMT器件...     

A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier

A high power density monolithic power amplifier operated at Ku band is presented utilizing a 0.3μm AlGaN/GaN HEMT production process on a 2-inch diameter semi-insulating（SI） 4H-SiC substrate by MOCVD. Over the 12-14 GHz frequency range,the single chip amplifier demonstrates a maximum power of 38 dBm（6.3 W）, a peak power added efficiency（PAE） of 24.2%and linear gain of 6.4 to 7.5 dB under a 10%duty pulse condition when operated at V_ds = 25 V and V_gs = -4 V.At these power levels,the amplifier exhibits a power density in excess of 5 W/mm.     

Ku波段宽带氮化镓功率放大器MMIC

基于0.25μm栅长GaN HEMT工艺,采用三级放大拓扑结构设计了一款Ku波段GaN功率放大器.放大器设计从建立大信号模型出发,输出匹配网络和级间匹配网络均采用电抗匹配减小电路的损耗,从而提高整体放大器的功率效率.测试结果表明,该放大器在14.6~18GHz频带内,小信号增益30dB,脉冲饱和输出功率达15W,功率附加效率(PAE)大于32%;在14.8GHz频点处,放大器的峰值功率达19.5W,PAE达39%.该结果表明GaN MMIC具有高频高功率高效率的优势,具有广阔的应用前景.     

0.15μm GaN HEMT及其应用

报道了毫米波应用的0.15μm场板结构GaN HEMT。器件研制采用了76.2mm(3英寸)SiC衬底上外延生长的AlGaN/GaN异质结构材料,该材料由MOCVD技术生长并引入了掺Fe GaN缓冲层技术以提升器件击穿电压。器件栅脚和集成了场板的栅帽均由电子束光刻实现,并采用栅挖槽技术来控制器件夹断电压。研制的2×75μm栅宽GaN HEMT在24V工作电压、35GHz频率下的负载牵引测试结果显示其输出功率密度达到了4W/mm,对应的功率增益和功率附加效率分别为5dB和35%。采用该0.15μm GaN HEMT技术进行了Ka波段GaN功率MMIC的研制,所研制的功率MMIC在24V工作电压下脉冲工作时(100μs脉宽、10%占空比),29GHz频点处饱和功率达到了10.64W。     

A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate

This work presents a two-stage high-power amplifier monolithic microwave integrated circuit (MMIC) operating between 9 GHz and 11 GHz based on a fully integrated AlGaN/GaN high electron mobility transistor (HEMT) technology on s.i. SiC substrate and is suitable for radar applications. The MMIC device with a chip size of 4.5/spl times/3 mm/sup 2/ yields a linear gain of 20 dB and a maximum pulsed saturated output power of 13.4 W at 10 GHz equivalent to 3.3 W/mm at V/sub DS/=35V, 10% duty cycle, and a gain compression level of 5 dB. Further, dc reliability data are given for the MMIC HEMT technology.     

具有平坦增益的X波段GaN单片功率放大器

A flat gain two-stage MMIC power amplifier with a 2.8 GHz bandwidth is successfully developed for X band frequency application based on a fully integrated micro-strip Al Ga N/Ga N HEMT technology on a semiinsulating Si C substrate. Designed with a binary-cluster matching structure integrated with RC networks and LRC networks, the developed power MMIC gets a very flat small signal gain of 15 d B with a gain ripple of 0.35 d B over 9.1–11.9 GHz at the drain bias of 20 V. These RC networks are very easy to improve the stability of used Ga N HEMTs with tolerance to the MMIC technology. Inside the frequency range of 9–11.2 GHz where the measurement system calibrated, the amplifier delivers a pulsed output power of 39 d Bm and an associated power added efficiency of about 20% at 28 V without saturation, as the available RF power is limited.     

高效率X波段GaN MMIC功率放大器的研制

突破了GaN MMIC功率放大器的设计、制造、测试等关键技术,研制成功X波段GaN MMIC功率放大器。设计及优化了电路拓扑结构及电路参数,放大器芯片采用了国产外延材料及标准芯片制作工艺。单片功率放大器包含两级放大电路,采用了功率分配及合成匹配电路,输入输出阻抗均为50Ω。制作了微波测试载体及夹具,最终实现了X波段GaN MMIC功率放大器微波参数测试。在8.7～10.9 GHz频率范围内,该功率放大器输出功率大于16 W,功率增益大于14 dB,增益波动小于0.4 dB,输入驻波比小于2∶1,功率附加效率大于40%,带内效率最高达52%。     

A Ku-band 3.4 W/mm power AlGaN/GaN HEMT on a sapphire substrate

This Daper describes the first domestic Ku-band power AlGaN/GaN HEMT fabricated on a sapphire substrate.The device with a gate width of 0.5 mm and a gate length of 0.35 μm has exhibited an extrinsic current gain cutoff frequency of 20 GHz and an extrinsic maximum frequency of oscillation of 75 GHz.Under V_(DS)=30 V, CW operating conditions at 14 GHz,the device exhibits a linear gain of 10.4 dB and a 3-dB-gain-compressed output power of 1.4 W with a Dower added efficiency of 41%.Under pulse operating conditions,the linear gain is 12.8 dB and the 3-dB-compressed output power is 1.7 W The power density reaches 3.4 W/mm.     

八胞合成X波段140W AlGaN/GaNHEMT的研究与应用

主要研究第三代半导体AlGaN/GaN功率管内匹配问题.采用8个2.5 mm GaN功率芯片设计、合成以及内匹配电路的测试,在漏极电压40 V,脉冲占空比10％,脉宽100μs的条件下进行功率匹配,实现了GaN功率HEMT在X波段8 GHz 140 W功率输出的内匹配电路,并使整个电路的输入、输出电路阻抗提升至50 Ω...     

S波段大功率、高效率GaN HEMT器件研究

基于国产的SiC衬底GaN外延材料,研制出大栅宽GaN HEMT单胞管芯。通过使用源牵引和负载牵引技术仿真出所设计模型器件的输入输出阻抗,推导出本器件所用管芯的输入输出阻抗。使用多节λ/4阻抗变换线设计了宽带Wilkinson功率分配/合成器,对原理图进行仿真,优化匹配网络的S参数,对生成版图进行电磁场仿真,通过LC T型网络提升管芯输入输出阻抗。采用内匹配技术,成功研制出铜-钼-铜结构热沉封装的四胞内匹配GaN HEMT。在频率为2.7～3.5 GHz、脉宽为3 ms、占空比为50%、栅源电压Vgs为-3 V和漏源电压Vds为28 V下测试器件,得到最大输出功率Pout大于100 W(50 dBm),PAE大于47%,功率增益大于13 dB。     

0.5μm AlGaN/GaN HEMT及其应用

报道了采用I线步进光刻实现的76.2 mm SiC衬底0.5μm GaN HEMT.器件正面工艺光刻均采用了I线步进光刻来实现,背面用通孔接地.栅脚介质刻蚀采用一种优化的低损伤RIE刻蚀方法实现了60°左右的侧壁倾斜角,降低了栅脚附近峰值电场强度,提高器件性能和可靠性.研制的GaN HEMT器件fT为15 GHz,fm...     

An X-band four-way combined GaN solid-state power amplifier

An X-band four-way combined GaN solid-state power amplifier module is fabricated based on a self-developed AlGaN/GaN HEMT with 2.5-mm gate width technology on SiC substrate. The module consists of an Al-GaN/GaN HEMT, Wilkinson power hybrids, a DC-bias circuit and microstrip matching circuits. For the stability of the amplifier module, special RC networks at the input and output, a resistor between the DC power supply and a transistor gate at the input and 3λ/4 Wilkinson power hybrids are used for the cancellation of low frequency self-oscillation and crosstalk of each amplifier. Under V_(ds)= 27 V, V_(gs) = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5 dB with a power added efficiency of 17.9%, and an output power of 42.93 dBm; the power gain compression is 2 dB. For a four-way combined solid-state amplifier, the power combining efficiency is 67.5%. It is concluded that the reduction in combining efficiency results from the non-identical GaN HMET, the loss of the hybrid coupler and the circuit fabricating errors of each one-way amplifier.     

蓝宝石衬底上槽栅型X波段增强型AlGaN/GaN HEMT

研制了一款X波段增强型AlGaN/GaN高电子迁移率晶体管(HEMT)。在3英寸(1英寸=2.54 cm)蓝宝石衬底上采用低损伤栅凹槽刻蚀技术制备了栅长为0.3μm的增强型AlGaN/GaN HEMT。所制备的增强型器件的阈值电压为0.42 V,最大跨导为401 mS/mm,导通电阻为2.7Ω·mm。器件的电流增益截止频率和最高振荡频率分别为36.1和65.2 GHz。在10 GHz下进行微波测试,增强型AlGaN/GaN HEMT的最大输出功率密度达到5.76 W/mm,最大功率附加效率为49.1%。在同一材料上制备的耗尽型器件最大输出功率密度和最大功率附加效率分别为6.16 W/mm和50.2%。增强型器件的射频特性可与在同一晶圆上制备的耗尽型器件相比拟。     

基于GaN HEMT新型负反馈结构固态宽带功率放大器的研究

The design and fabrication of an ultra-broadband power amplifier based on a Ga N HEMT, which operates in the frequency range from 3 to 8 GHz, is presented in this paper. A TGF2023-02 Ga N HEMT chip from Tri Quint is adopted and modeled. A novel negative feedback structure is applied in the circuit. The measured results show that the amplifier module has a wide range frequency response that is almost consistent with those of simulation at frequencies from 3 to 6.5 GHz. The measured power gain is greater than 7 d B between 3 and 6.5 GHz.The saturated output power is 38.5 d Bm under DC bias of Vds D28 V, Vgs D 3:5 V at the frequency of 5.5 GHz.     

14W X波段AlGaN/GaN HEMT功率MMIC

报道了研制的SiC衬底AIGaN/GaN HEMT微带结构微波功率MMIC,芯片工艺采用凹槽栅场板结构提高AlGaN/GaNHEMTs的微波功率特性.S参数测试结果表明AlGaN/GaN HEMTs的频率特性随器件的工作电压变化显著.研制的该2级功率MMIC在9～11GHz带内30V工作,输出功率大于10W,功率增益大于12dB,带内峰值输出功率达到14.7W,功率增益为13.7dB,功率附加效率为23%,该芯片尺寸仅为2.0mm×1.1mm.与已发表的X波段AlGaN/GaN HEMT功率MMIC研制结果相比,本项工作在单位毫米栅宽输出功率和芯片单位面积输出功率方面具有优势.     

一款X波段高效率GaN负载调制平衡放大器MMIC

报道了一款采用0.25μm GaN HEMT工艺的X波段高效率负载调制平衡放大器芯片。该芯片由两个射频端口的90°Lange耦合器,一对平衡功率放大器和一个控制信号功率放大器组成。通过改变同频率处控制信号的幅度与相位去调制平衡功率放大器的阻抗。在连续波测试条件下,该负载调制平衡放大器芯片在8~11 GHz范围内,最大输出功率为42.5 dBm,饱和效率为45%~55%,当输出功率回退6 dB时,效率为40%~45%。     

Ka波段5W GaAs PHMET功率MMIC

报道了一款采用0.15μm GaAs功率MMIC工艺研制的Ka波段功率放大器芯片。芯片采用四级放大拓扑结构,在29～32GHz频带范围内6V工作条件下线性增益25dB,线性增益平坦度小于±0.75dB;饱和输出功率大于5W,饱和效率大于20%,功率增益大于22dB;1dB压缩点输出功率大于36.5dBm,效率大于18%。