A 10-bit 200-kS/s SAR ADC IP core for a touch screen SoC

Based on a 5 MSBs(most-significant-bits)-plus-5 LSBs(least-significant-bits) C-R hybrid D/A conversion and low-offset pseudo-differential comparison approach,with capacitor array axially symmetric layout topology and resistor string low gradient mismatch placement method,an 8-channel 10-bit 200-kS/s SAR ADC(successive-approximation -register analog-to-digital converter) IP core for a touch screen SoC(system-on-chip) is implemented in a 0.18μm 1P5M CMOS logic process.Design considerations for the touch sc...     

An area-efficient 55 nm 10-bit 1-MS/s SAR ADC for battery voltage measurement

An area-efficient CMOS 1-MS/s 10-bit charge-redistribution SAR ADC for battery voltage measurement in a SoC chip is proposed. A new DAC architecture presents the benefits of a low power approach without applying the common mode voltage. The threshold inverter quantizer(TIQ)-based CMOS Inverter is used as a comparator in the ADC to avoid static power consumption which is attractive in battery-supply application. Sixteen level-up shifters aim at converting the ultra low core voltage control signals to the higher voltage level analog circuit in a 55 nm CMOS process. The whole ADC power consumption is 2.5 mW with a maximum input capacitance of 12 pF in the sampling mode. The active area of the proposed ADC is 0.0462 mm2 and it achieves the SFDR and ENOB of 65.6917 dB and 9.8726 bits respectively with an input frequency of 200 kHz at 1 MS/s sampling rate.     

一种高速高精度比较器的设计

数模转换器(ADC)作为片上集成系统SOC的关键模块,直接决定着SOC的性能.比较器更是在ADC中尤其是逐次逼近型(SAR)ADC中起着非常重要的作用.在SAR ADC中,比较器决定着ADC的速度、精度和功耗等指标,因此说,比较器是SARADC的核心电路.设计了一种应用于12 bit、1 Ms/s采样率SAR ADC的比较器,并提出了估算输入失调电压的新方法.仿真结果表明,在1.8 V,UMC18混合信号工艺下,速度能达到20 MHz,增益达到77 dB,有效分辨的最小电平达到400μV,第一级等效输入噪声仅为94μV.在每级电路存在20 mV失调电压的情况下,该比较器仍能将失调电压有效消除.     

A 12-bit self-calibrating SAR ADC achieving a Nyquist 90.4-dB SFDR

This paper describes a 10 or 12 bit programmable successive approximation register ADC for bridge stress monitoring systems requiring high-resolution, high linearity, low power and small size. Its sampling rate is scalable, from 0 to 200 kS/s. The proposed ADC employs a novel time-domain comparator with offset cancellation. Prototyped in a 0.18-μm, 6MIP CMOS process, the ADC, at 12 bit, 100 kS/s, achieves a Nyquist SNDR of 68.74 dB (11.13), an SFDR of 90.36 dB, while dissipating 579.6 μW from a 1.8-V supply. The on-chip calibration improves the DNL from +0.2/?0.74 LSB to +0.23/?0.25 LSB and INL from +1.27/?0.97 LSB to +0.41/?0.4 LSB.     

A 1.33 μW 10-bit 200KS/s SAR ADC with a tri-level based capacitor switching procedure

A 10-bit successive approximation register (SAR) analog-to-digital converter (ADC) using an energy-efficient tri-level based capacitor switching procedure is presented. The proposed switching procedure achieves 97.66% less switching energy when compared to the conventional method. The number of unit capacitors is reduced by a factor of 4 over that of conventional architecture as well. To make the power consumption of the comparator scale down with respect to the comparison rate, the fully dynamic comparator is used. Moreover, the dynamic logic circuit is implemented to further reduce the power of digital circuits. The ADC is implemented in a 0.18 μm 1P6M CMOS technology. At 1.0-V power supply and 200KS/s, the ADC achieves an SNDR of 60.54 dB and consumes 1.33 μW, resulting in a figure-of-merit (FOM) of 7.7 fJ/conversion-step. The ADC core occupies an active area of only 230×400 µm².     

基于比较器亚稳态抑制技术的8位320 MS/sSAR ADC

提出一种比较器亚稳态抑制技术,并将其应用于一个8位320 MS/s 的逐次逼近型模数转换器(SAR ADC)。该技术抑制了比较器在高速工作情况下可能出现的亚稳态现象,从而降低了比较器出现错误结果的概率。同时,提出一种转换时间复用技术,使ADC能在转换与采样模式之间快速切换。与传统技术相比,随着工艺角、电源电压和温度(PVT)的变化,ADC的采样时间会被最大化。基于65 nm CMOS工艺,设计了一种8位320 MS/s SAR ADC。芯片测试结果表明,在1 V电源电压下,功耗为1 mW,信号噪声失真比(SNDR)>43 dB,无杂散动态范围(SFDR)>53.3 dB。SAR ADC核的芯片面积为0.021 mm²,在Nyquist采样率下,优值为29 fJ/step。     

一种基于电阻型数模转换器每级输出3位的6-bit 410-MS/s单通道异步逐次逼近模数转换器

该设计采用SMIC 65-nm CMOS工艺,实现了一款可应用于超宽带通信领域的单通道低功耗6位410-MS/s异步逐次逼近模数转换器(SAR ADC)。通过采用电阻型数模转换器、每级输出3位数字码字结构,以及改进的异步控制逻辑,该ADC在370-MS/s采样率时,无杂散动态范围(SFDR)达到41.95-dB,信号噪声失真比(SNDR)达到28.52-dB。在采样率为410MS/s时,该设计仍能达到40.71-dB的SFDR和30.02-dB的SNDR。通过动态比较器的使用,实现了低功耗设计。测试结果表明,在410-MS/s采样率下,电路总功耗为2.03mW,对应的品质因子(FOM)为189.17fJ/step。     

High power-efficient asynchronous SAR ADC for IoT devices

This paper presents a power-efficient 100-MS/s, 10-bit asynchronous successive approximation register (SAR) ADC. It includes an on-chip reference buffer and the total power dissipation is 6.8 mW. To achieve high performance with high power-efficiency in the proposed ADC, bootstrapped switch, redundancy, set-and-down switching approach, dynamic comparator and dynamic logic techniques are employed. The prototype was fabricated using 65 nm standard CMOS technology. At a 1.2-V supply and 100 MS/s, the ADC achieves an SNDR of 56.2 dB and a SFDR of 65.1 dB. The ADC core consumes only 3.1 mW, resulting in a figure of merit (FOM) of 30.27 fJ/conversionstep and occupies an active area of only 0.009 mm².     

一种10位50MS/s两级逐次逼近流水线混合型A/D转换器

本文在0.18μm CMOS工艺下,实现了一款10位50MS/s两级逐次逼近流水线混合型模数转换器（pipeline SAR ADC）。其由基于逐次逼近的增益模数单元和逐次逼近ADC组成,并采用1位冗余位放宽了子模数转换器的比较误差。通过采用逐次逼近结构,增益减半MDAC技术,动态比较器及动态逐次逼近控制逻辑,降低了模数转换器的功耗和面积。流片测试结果表明,在1.8V电源电压,50MS/s采样速率下,信噪失真比(SFDR)和功耗分别为56.04dB和5mV。     

An 8/10 bit 200/100MS/s configurable asynchronous SAR ADC

This paper presents an asynchronous 8/10 bit configurable successive approximation register analog-to-digital converter (ADC). The proposed ADC has two resolution modes and can work at a maximal sampling rate of 200 and 100MS/s for 8 bit mode and 10 bit mode respectively. The ADC uses a custom-designed 1 fF unit capacitor to reduce the power consumption and settling time of capacitive DAC, a dynamic comparator with tail current to minimize kickback noise and improve linearity. Moreover, asynchronous control technique is utilized to implement the ADC in a flexible and energy-efficient way. The proposed ADC is designed in 90 nm CMOS technology. At 100MS/s and 1.0 V supply, the ADC consumes 1.06 mW and offers an ENOB of 9.56 bit for 10 bit mode. When the ADC operates at 8 bit mode, the sampling rate is 200MS/s with 1.56 mW power consumption from 1.0 supply. The resulted ENOB is 7.84 bit. The FOMs for 10 bit mode at 100MS/s and 8 bit mode at 200MS/s are 14 and 34 fJ/conversion-step respectively.     

A 10-MS/s-to-100-kS/s Power-Scalable Fully Differential CBSC 10-Bit Pipelined ADC With Adaptive Biasing

A 10-MS/s-to-100-kS/s power-scalable fully differential comparator-based switched-capacitor (CBSC) 10-bit pipelined analog-to-digital converter (ADC) is presented. To operate over a wide range of sampling rates, an adaptive biasing technique is proposed to enhance both linearity and signal-to-noise-plusdistortion ratio (SNDR) at low sampling rates. This ADC has been fabricated in a 0.18-$muhbox{m}$ standard CMOS process. It achieves 62.3-dB spurious-free-dynamic range (SFDR) and 53.3-dB SNDR while being sampled at 10 MS/s and consuming 1.95 mW from a 1.8-V power supply, which obtains a figure of merit of 510 fJ/step. With the utilization of adaptive biasing, the SNDR increases from 53.3 to 56.4 dB at most when decreasing the sampling rate. In addition, its power consumption continuously reduces from 1.95 mW (10 MS/s) to 158.4 $muhbox{W}$ (100 kS/s).      

用于触摸屏控制电路的低功耗模数转换器设计

为了降低触摸屏控制电路的功耗,本文提出了一种低功耗逐次逼近型模数转换器(SAR ADC)。对该SAR ADC所采用的电容阵列数模转换器(DAC)、比较器和逐次逼近寄存器等进行了研究与设计。首先,基于两级并串耦合电容设计电容阵列DAC结构,并设计配套的参考电平转换方案。接着,设计两级全动态比较器,并分析比较器的工作原理。然后,基于动态逻辑设计低功耗低误码逐次逼近寄存器。最后,基于180nm CMOS工艺,在1V电源电压,200kHz采样频率和96.243kHz输入频率条件下对SAR ADC进行了仿真。仿真结果表明:积分非线性误差(INL)和微分非线性误差(DNL)分别为0.222/-0.203LSB和0.231/-0.184LSB,无杂散动态范围(SFDR)为76.56dB,信噪失真比(SNDR)为61.50dB,有效位(ENOB)为9.92位,功耗为0.464μW,品质因素(FOM)值为2.4fJ/Conv.-step。本文设计的低功耗SAR ADC满足触摸屏控制电路应用要求。     

一种基于CMOS工艺的异步数字斜坡ADC

设计了一个5位330 MS/s的异步数字斜坡模数转换器(ADC)。采用中芯国际55 nm工艺和Cadence Virtuoso软件,对电路进行设计和仿真。供电电源为1.2 V,改进后的延迟单元将延迟时间缩短到50 ps。另外,该电路中的比较器采用自动关闭方式,节省了功耗。输入电压峰峰值为0.4 V时,仿真得到信噪失真比(SNDR)为28.19 dB,有效位(ENOB)为4.39位,无杂散噪声动态范围(SFDR)为35.87 dB,信噪比(SNR)为31.47 dB。     

An 8 bit 1 MS/s SAR ADC with 7.72-ENOB

This paper presents a low power 8-bit 1 MS/s SAR ADC with 7.72-bit ENOB. Without an op-amp, an improved segmented capacitor DAC is proposed to reduce the capacitance and the chip area. A dynamic latch comparator with output offset voltage storage technology is used to improve the precision. Adding an extra positive feedback in the latch is to increase the speed. What is more, two pairs of CMOS switches are utilized to eliminate the kickback noise introduced by the latch. The proposed SAR ADC was fabricated in SMIC 0.18 μm CMOS technology. The measured results show that this design achieves an SFDR of 61.8 dB and an ENOB of 7.72 bits, and it consumes 67.5 μ W with the FOM of 312 fJ/conversion-step at 1 MS/s sample under 1.8 V power supply.     

A systematic design approach for low-power 10-bit 100 MS/s pipelined ADC

A systematic design approach for low-power 10-bit, 100 MS/s pipelined analog-to-digital converter (ADC) is presented. At architectural level various per-stage-resolution are analyzed and most suitable architecture is selected for designing 10-bit, 100 MS/s pipeline ADC. At Circuit level a modified wide-bandwidth and high-gain two-stage operational transconductance amplifier (OTA) proposed in this work is used in track-and-hold amplifier (THA) and multiplying digital-to-analog converter (MDAC) sections, to reduce power consumption and thermal noise contribution by the ADC. The signal swing of the analog functional blocks (THA and MDAC sections) is allowed to exceed the supply voltage (1.8 V), which further increases the dynamic range of the circuit. Charge-sharing comparator is proposed in this work, which reduces the dynamic power dissipation and kickback noise of the comparator circuit. The bootstrap technique and bottom plate sampling technique is employed in THA and MDAC sections to reduce the nonlinearity error associated with the input signal resulting in a signal-to-noise-distortion ratio of 58.72/57.57 dB at 2 MHz/Nyquist frequency, respectively. The maximum differential nonlinearity (DNL) is +0.6167/−0.3151 LSB and the maximum integral nonlinearity (INL) is +0.4271/−0.4712 LSB. The dynamic range of the ADC is 58.72 dB for full-scale input signal at 2 MHz input frequency. The ADC consumes 52.6 mW at 100 MS/s sampling rate. The circuit is implemented using UMC-180 nm digital CMOS technology.     

An Ultra Low Energy 12-bit Rate-Resolution Scalable SAR ADC for Wireless Sensor Nodes

A resolution-rate scalable ADC for micro-sensor networks is described. Based on the successive approximation register (SAR) architecture, this ADC has two resolution modes: 12 bit and 8 bit, and its sampling rate is scalable, at a constant figure-of-merit, from 0-100 kS/s and 0-200 kS/s, respectively. At the highest performance point (i.e., 12 bit, 100 kS/s), the entire ADC (including digital, analog, and reference power) consumes 25 muW from a 1-V supply. The ADC's CMRR is enhanced by common-mode independent sampling and passive auto-zero reference generation. The efficiency of the comparator is improved by an analog offset calibrating latch, and the preamplifier settling time is relaxed by self-timing the bit-decisions. Prototyped in a 0.18-mum, 5M2P CMOS process, the ADC, at 12 bit, 100 kS/s, achieves a Nyquist SNDR of 65 dB (10.55 ENOB) and an SFDR of 71 dB. Its INL and DNL are 0.68 LSB and 0.66 LSB, respectively     

A 6-bit 3.5-GS/s 0.9-V 98-mW Flash ADC in 90-nm CMOS

A 6-bit 3.5-GS/s flash ADC is reported. A load circuit with a clamp diode and a replica-biasing scheme is developed for low-voltage and high-speed operation. An acceleration capacitor is introduced for high-speed overdrive recovery of a comparator. An averaging and interpolation network is employed in this ADC. The interpolation factor is optimized considering random offset, active area, and systematic offset to realize low offset and small active area. The ADC is fabricated in a 90-nm CMOS process and occupies 0.15 mm². It consumes 98 mW with a 0.9-V power supply. With Nyquist input, SNDR and SFDR at 3.5 GS/s are 31.18 dB and 38.67 dB, respectively.     

A 0.6 V 100 KS/s 8–10 b resolution configurable SAR ADC in 0.18 μm CMOS

A resolution configurable ultra-low power SAR ADC in 0.18 μm CMOS process is presented. The proposed ADC has maximum sampling rate of 100 KS/s with configurable resolution from 8 to 10 b and operates at a supply of 0.6 V. Two-stage bootstrapped switch and voltage boosting techniques are introduced to improve the performance of the ADC at low voltage. To reduce the power consumption of the analog components of the ADC, monotonic capacitor switching procedure and fully dynamic comparator are utilized. The implementation of dynamic logic further reduces the power of the digital circuits. Post-layout simulation results show that the proposed SAR ADC consumes 521 nW and achieves an SNDR of 60.54 dB at 10 b mode, resulting in an ultra-low figure-of-merit of 6.0 fJ/conversion-step. The ADC core occupies an active area of only 350 × 280 μm².     

A 12-bit 100 MS/s pipelined SAR ADC with addition-only digital error correction

A new redundant successive approximation register (SAR) ADC architecture with digital error correction is presented to avoid the comparator offset issue and subtraction operations. A 2-channel 12-bit 100 MS/s SAR ADCs based on the proposed architecture with voltage-controlled delay lines based time-domain comparator is designed in a 65 nm CMOS technology. Simulation results show that at a supply voltage of 1.2 V, the SAR ADC achieves a signal-to-noise-and-distortion ratio (SNDR) of 70.81 dB (11.47 ENOB), a spurious free dynamic range (SFDR) of 80.33 dB for a near Nyquist input at 100 MS/s, while dissipating 11 mW from a 1.2-V supply, giving a FOM of 38.8 fJ/Conversion-step.     

A 10-bit 110 MHz SAR ADC with asynchronous trimming in 65-nm CMOS

A 10-bit 110 MHz SAR ADC with asynchronous trimming is presented. In this paper, a high linearity sampling switch is used to produce a constant parasitical barrier capacitance which would not change with the range of input signals. As a result, the linearity of the SAR ADC will increase with high linearity sampled signals. Farther more, a high-speed and low-power dynamic comparator is proposed which would reduce the comparison time and save power consumption at the same time compared to existing technology. Additionally, the proposed comparator provides a better performance with the decreasing of power supply. Moreover, a highspeed successive approximation register is exhibited to speed up the conversion time and will reduce about 50% register delay. Lastly, an asynchronous trimming method is provided to make the capacitive-DAC settle up completely instead of using the redundant cycle which would prolong the whole conversion period. This SAR ADC is implemented in 65-nm CMOS technology the core occupies an active area of only 0.025 mm² and consumes 1.8 mW. The SAR ADC achieves SFDR > 68 dB and SNDR > 57 dB, resulting in the FOM of 28 fJ/conversion-step. From the test results, the presented SAR ADC provides a better FOM compared to previous research and is suitable for a kind of ADC IP in the design SOC.