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1.
The temperature dependence of the cubic phase content and optical properties of Boron nitrogen (BN) thin films was studied in this paper. The BN thin films were deposited on fused silica and Si substrates by radio frequency bias magnetron sputtering. The BN film properties before and after annealing were characterized by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and UV-visible transmittance and reflection spectra. The results indicate that annealing temperature has a significant effect on the optical absorption edge, optical absorption coefficient α, refractive index n, and optical conductivity σ of BN films. The optical absorption edge shift to the high energy with annealing temperature increase indicates that the film optical band gap Eg becomes large. The change in the optical absorption properties results from the stress relaxation and phase transformation owing to the high temperature annealings. The dependence of α on the photon energy is fitted by the Urbach tail model in order to determine the Urbach energy E0. In addition, it is found that refractive index n exists clearly different dependences on temperature in visible and ultraviolet regions, and the optical conductivity σ threshold moves to high energy with increasing annealing temperatures in the threshold region.  相似文献   

2.
采用脉冲激光沉积和硒化后热处理的方法在石英衬底上制备Cu(In,Ga)Se2(简写为CIGS)薄膜,研究脉冲激光沉积(PLD)技术在制备CIGS薄膜太阳能电池材料上的应用,分析了不同预制层沉积顺序及厚度对CIGS薄膜组织结构、表面形貌、成分以及光学性能的影响。实验结果表明:(1)利用PLD技术及后硒化处理的工艺,制得的CIGS太阳能电池吸收层具有纯相和高结晶度等特性;(2)CuGa/In金属预制层的叠层顺序和叠层数、硒化退火温度对薄膜的结晶质量、晶粒尺寸、成分都具有重要的影响,其中叠层顺序影响最为明显;(3)样品均表现出对可见光区具有透射率低和吸收系数高的光学特性。本工作为制备性能优良的CIGS太阳能电池吸收层,提供了一个新颖的工艺手段。  相似文献   

3.
Titanium oxide thin films were prepared on self-assembled monolayers-coated silicon substrate using layer-by-layer self-assembly method and chemical bath deposition from an aqueous solution. The effects of temperature on structural properties, thickness and morphologies of titanium oxide thin films were investigated. The results show that the absorption peak of peroxo complexes of titanium at 410 nm decreases gradually with increasing the temperature. The deposited films consisting of titanium oxide nanocrystals are believed to be fully amorphous by XRD. Titanium oxide thin films fabricated at 60 °C for 2 h are continuous, dense and homogeneous with a size in the range of 20-40 nm by SEM. The chemical compositions of deposited thin films were studied by EDS, and the mole ratio of O to Ti is 2.2:1.  相似文献   

4.
采用磁控溅射工艺制备CoNbZrTb纳米薄膜,研究了掺杂稀土元素Tb对薄膜软磁性能、微波磁导率及其频谱特性的影响.结果表明:少量Tb 掺杂(<2%,摩尔分数)对该类薄膜的微结构和软磁性能影响较小,薄膜仍可保持非晶态结构和良好的软磁性能,但Tb掺杂可以显著增强薄膜磁谱的弛豫性,从而影响其微波磁导率和磁损耗;随Tb 掺杂量的增加,薄膜的磁各向异性场和共振频率得以有效提高;薄膜样品在2 GHz处复磁导率的虚部均大于200.掺杂少量Tb的CoNbZrTb非晶态纳米薄膜在109 Hz微波段具有较高磁损耗,有望在超薄层吸波材料中获得应用.  相似文献   

5.
氮化钛薄膜二次电子发射特性研究   总被引:1,自引:0,他引:1  
目的研究氮化钛薄膜的部分物理特性及真空中的电子发射特性,验证氮化钛薄膜具有相对较好的电导特性及较低的电子发射系数,证明氮化钛薄膜在空间大功率微波器件表面处理中有良好的应用前景。方法使用射频磁控溅射技术在单晶硅及玻璃片表面制备氮化钛薄膜,实验中通过调节溅射过程中氮气与氩气的气体流量比控制薄膜中的氮钛原子比。使用SEM对氮化钛薄膜的表面形貌及厚度进行表征。使用超高真空二次电子发射特性研究平台对氮化钛薄膜的二次电子发射特性进行表征。结果通过调节溅射过程中的氮气氩气流量比,能够有效控制薄膜中氮钛两种元素的含量,进而改变氮化钛薄膜的结晶方式和其他物理特性。当氮氩气体流量比约为10:15时,薄膜中氮钛原子比约为1:1。电阻率测试结果表明,薄膜中氮钛原子比越接近1:1,薄膜的电阻率越低。二次电子产额(SEY)测试结果表明,所制备氮化钛薄膜的最小SEY峰值约为1.46,低于平滑金(~1.8)、银(~2.2)表面的SEY。结论氮化钛薄膜具有较好的电导特性及较低的SEY,且其在真空环境中有良好的稳定性,能在不影响微波器件表面损耗的情况下,有效降低器件表面发生电子倍增的风险。  相似文献   

6.
1.IntroductionZnO especially in the form ofthin film shasbeen attracting attention because ofits m any applica-tions,such astransparentelectrodes,varistors,phosphors,gassensors,surface acousticw ave devicesandpiezoelectric actuators[1,2].M ore recently,re…  相似文献   

7.
Undoped zinc oxide and iron-doped zinc oxide thin films have been deposited by the sol-geldipcoating method. The Fe/Zn nominal volume ratio was 5% in the solution. The effects of Fe incorporation on morphological, structural, and optical properties of ZnO films were investigated. The scanning electron microscopy measurements showed that the surface morphology of the prepared thin films was affected by Fe doping. The X-ray diffraction patterns of the thin films showed that doped incorporation leads to substantial changes in the structural characteristics of ZnO thin films. The optical absorption measurements indicated a band gap in the range of 3.31 to 3.19 eV. The X-ray photoelectron spectroscopy demonstrated that Fe is incorporated in the ZnO matrix with 6.5 atomic percent (at %). The energy dispersive spectroscopy studies indicated the formation of ZnO with high efficiency.  相似文献   

8.
采用射频磁控溅射技术制备Sb2O3/CeO2共掺杂ZnO薄膜,研究了薄膜的结构及紫外光吸收性能.结果表明:Sb2O3和CeO2共同掺入ZnO薄膜后,ZnO(002)晶面的XRD衍射峰强度明显下降,ZnO薄膜呈混晶方式生长;共掺杂ZnO薄膜的紫外吸收性能明显优于纯ZnO薄膜,Sb对掺杂ZnO薄膜的结构和紫外吸收性能的影响...  相似文献   

9.
Thin films of cadmium sulfide with very well defined preferential orientation and relatively high absorption coefficient were fabricated by thermal evaporation technique. The research is focused to the fabrication and characterization of the compositional data of CdS thin films obtained by using X-ray diffraction, scanning electron microscope along with energy dispersive X-ray spectroscopy. The optical properties were studied by using a UV-VIS-NIR spectrophotometer. The effects of silver-doping by ion exchange process on the properties of as-deposited CdS thin films have been investigated.  相似文献   

10.
实验利用直流和射频磁控溅射方法交替沉积Cu-SiO2纳米复合膜,研究不同Cu靶功率和衬底温度对纳米复合膜的相结构和光吸收性能的影响。结果表明:随着Cu靶功率的增加,金属Cu纳米颗粒尺寸增大,导致光吸收峰峰位发生红移;随着衬底温度的升高,由于Cu再蒸发效应致使金属Cu纳米颗粒尺寸减小,引起光吸收峰峰位发生蓝移;与室温下沉积态Cu-SiO2纳米复合膜相比,在衬底加热条件下沉积的纳米复合膜在可见光波段出现了明显的表面等离子体共振吸收峰。因此,Cu靶功率和衬底温度对Cu-SiO2纳米复合薄膜的结晶状况和光吸收性能有显著影响。  相似文献   

11.
Noise absorbing properties of two kinds of magnetic thin films (one is electrically conductive Co-Zr-O granular thin film and the other is Ni-Zn ferrite thin film with high electrical resistivity) are analyzed by the finite element method (FEM) with various film thicknesses. For the Ni-Zn ferrite film with high electrical resistivity (~2 × 10 2 Ωm), a low reflection parameter (S11) value is predicted, and the value does not significantly change with increased film thickness up to 10 μm. However, the transmission parameter (S21) is reduced with increased film thickness due to increased power absorption by magnetic loss. For the Co-Zr-O thin films with low electrical resistivity (~1.6 × 10?5 Ωm), however, reflection signal is increased with increased film thickness due to diminished sheet resistance of the thin film. Transmission loss is not very sensitive to the thickness of the conductive film. Large power absorption is, therefore, predicted for conductive film of smaller thickness. It is concluded that film thickness is an important control parameter for the achievement of a highly absorptive thin film with increased electrical conductivity.  相似文献   

12.
The work described herein represents an efficient method in the deposition of poly(3-methylthiophene),P3MeTh,thin films utilizing a microwave plasma system in combination with a simultaneous doping with iodine.It was envisaged that,an alternative poly(3-methylthiophene),P(3MeTh),with an electron donating methyl substituent,would reduce the degree of ring opening which reportedly occur to a certain extent during the plasma polymerization process of its parent compound polythiophene.An alkyl substituent would also increase the solubility of the materials.P(3MeTh)thin film deposition has been performed utilizing microwave-induced plasma polymerization in order to directly grow films on glass substrates.Moreover,simultaneous doping of the so-formed polymer with iodine has been carried out as opposed to the post-synthesis doping method.This is aimed to prolong electrical conducting lifetime of the materials.The synthesized films were characterized by attenuated total reflection fourier transform infrared(ATR FT-IR)spectroscopy and energy dispersive X-ray spectroscopy(EDS)to confirm the incorporation of iodine dopant into the films.Scanning electron microscopy showed uniformly deposited films.It has been observed that the electrical conductivity of the doped film is 2 orders of magnitude higher than the undoped counterpart.The doped fabricated films exhibited UV-vis spectra indicative of increased π-conjugation(536 nm).Furthermore,electrical conductivity of the in situ doped P(3MeTh)is more highly sustained over a longer period of time.  相似文献   

13.
Ti(N,C,O) thin films were deposited by means of metal-organic chemical vapor deposition using a glow discharge with the aim of enhancing the corrosion resistance and electrical contact conductivity of austenitic stainless steel as a candidate materials for the bipolar plates used in polymer electrolyte membrane fuel cells. The corrosion properties were found to be dependent on the composition, i.e., the precursor source, and on the thickness of the thin films. Tetrakis(diethylamino) titanium used as a liquid metal organic source for the deposition of thin Ti(N,C,O) layers onto austenitic stainless steel provided a significant improvement of the corrosion resistance, which resulted in superior interfacial electrical conductivity after corrosion tests.  相似文献   

14.
目的研究不同甲烷体积分数对纳米金刚石(NCD)薄膜生长的影响,实现较小晶粒尺寸、高平整度的NCD薄膜的制备。方法采用微波等离子体增强化学气相沉积的方法制备NCD薄膜,以CH4/H2为气源,在生长阶段控制其他条件不变的前提下,探讨不同甲烷体积分数对NCD晶粒尺寸、表面形貌以及表面粗糙度的影响。采用SEM、XRD等观测NCD薄膜的表面形貌和晶粒尺寸大小,并利用Raman对NCD薄膜的不同散射峰进行分析。结果随着甲烷体积分数的增加,薄膜晶粒尺寸有减小的趋势。甲烷体积分数较低时,晶形比较完整,但致密度较小;甲烷体积分数较高时,晶形杂乱无章,但致密度较好。当甲烷体积分数为9%时NCD薄膜平均粒径达到最小,为21.3 nm,表面粗糙度较好,但非晶金刚石成分开始大量生成,NCD薄膜质量开始变差;当甲烷体积分数为8%时其形貌最好,且此时最小表面粗糙度小于20 nm。通过Raman分析可知NCD薄膜中出现了硅峰和石墨烯特征峰。结论甲烷体积分数对NCD薄膜形貌有较大影响,甲烷体积分数为8%时是表面平整度由较差变好再逐渐变差的分界点,且平均晶粒尺寸为23.6 nm,薄膜表面具有较好的平整度。  相似文献   

15.
Pure nanobrookite titania (TiO2) thin films were deposited on glass substrates by the spin-coating method using titanium butoxide and acetic acid. The particle sizes of TiO2 films were controlled by heat treatment temperatures. The activation energy for particle growth was calculated as 23.1 kJ/mol. The structural and optical properties of the nanobrookite TiO2 thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), ultraviolet-visible absorption spectroscopy (UV-vis), and Fourier transform infrared spectroscopy (FTIR).  相似文献   

16.
本文综述了近年来BaTiO3铁电薄膜的研究进展,就BaTiO3薄膜的制备方法、性能及其影响因素,深入分析了BaTiO3薄膜制备技术的优、缺点,展望了其应用前景.  相似文献   

17.
Oriented n-type bismuth telluride thin films with various layered nanostructures have been fabricated by radio-frequency (RF) magnetron sputtering. The crystal structures and microstructures of the films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The transport properties including carrier concentration, mobility, Seebeck coefficient and in-plane electrical conductivity were measured, which showed strong microstructure-dependent behaviors. The relationship between morphologies and transport properties of the films was explored. The optimal morphology and transport properties of films were obtained at the substrate temperature of 350 °C under the pressure of 1.0 Pa with oriented layered structure. Based on these results, a formation mechanism of these nanostructures is proposed and discussed. The interfaces and grain boundaries formed in these layered structures are beneficial to the reduction in thermal conductivity, which could result in potential TE films with high ZT value.  相似文献   

18.
金刚石薄膜的附着力是影响CVD金刚石涂层刀具切削性能的关键因素,本文采用EACVD法在硬质合金(YG6)基体上沉积金刚石涂层;用Ar-H2微波等离子WC-C0衬底进行刻蚀处理,以改变基体表面与金刚石涂层间的界面结构,提高金刚石涂层的附着力;采用压痕法评估涂层附着力,借助SEM等观察刻蚀预处理方法对膜基界面的影响,并对此进行分析和讨论。  相似文献   

19.
The effects of Cu content on the electrical and structural properties of Ag-Cu thin films were studied before and after microwave processing. Copper was chosen as the alloying element because of its low solubility in Ag, which enables it to segregate at the surface. After microwave annealing, enhanced electrical and structural properties were observed. The results from Rutherford backscattering spectrometry, x-ray diffraction, and four-point probe measurements suggested that the resistivity is controlled by the residual copper concentration and increased grain growth during the low-temperature microwave anneals. For each particular copper concentration, microwave annealing resulted in highest Hall mobility and lowest resistivity. These findings opened the possibility for novel materials structures based on low-temperature microwave processing schemes.  相似文献   

20.
文章综述了以直流电弧等离子体喷射法制备自支撑金刚石膜的研究新进展,对电弧特性、金刚石晶体质量、力学性能、光学性能及热学性能进行了介绍。研究表明:不同电弧区域的金刚石膜结晶质量及应力状态有所差异,钛过渡层可以降低金刚石的残余应力;采用四点弯曲测得金刚石的断裂韧性为10.99 MPa·m1/2;一定温度范围内,金刚石吸收系数与温度的关系基本不受金刚石质量和厚度的影响;金刚石的光学性能越好,其热导率越高,且金刚石形核面热导率略高于生长面,500 K以上时多晶金刚石膜的热导率近似于单晶水平。   相似文献   

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