Preparation and electrical properties of ITO thin films by dip-coating process

Indium tin oxide (ITO) thin films were prepared on quartz glass substrates by a dip-coating process. The starting solution was prepared by mixing indium chloride dissolved in acetylacetone and tin chloride dissolved in ethanol. The ITO thin films containing 0 20 mol% SnO₂ were successfully prepared by heat-treatment at above 400 °C. Chemical stability of sol were investigated by using a FTIR spectrometer. The electrical resistivity of the thin films decreased with increasing heat-treatment temperature, that is carrier concentration increased, and mobility decreased with increasing SnO₂ content. The ITO thin films containing 12 mol% SnO₂ showed the minimum resistivity of =1.2 × 10^–3 ( cm). It also showed high carrier concentration of N=1.2 × 10²⁰(cm^–3) and mobility _H=7.0(cm² V^–1 s^–1).     

Properties of indium oxide/tin oxide multilayered films prepared by ion-beam sputtering

The preparation and characterization of indium oxide (InO _x )/tin oxide (SnO _y ) multilayered films deposited by ion-beam sputtering are described and compared with indium tin oxide (ITO) films. The structure and the optoelectrical properties of the films are studied in relation to the layered structures and the post-deposition annealing. Low-angle X-ray diffraction analysis showed that most films retained the regular layered structures even after annealing at 500° C for 16 h. As an example, we obtained a resistivity of 6×10^–4 cm and a transparency of about 85% in the visible range at a thickness of 110 nm in a multilayered film of InO _x (2.0 nm)/SnO _y (0.2 nm)×50 pairs when annealed at 300° C for 0.5 h in air. Hall coefficient measurements showed that this film had a mobility of 17 cm² V^–1 sec^–1 and a carrier concentration (electron density) of 5×10²⁰ cm^–3.     

Effect of Growth-Induced Linear Defects on High Frequency Properties of Pulse-Laser Deposited YBa2Cu3O7?δ Films

Growth-induced linear defects are shown to strongly affect the microwave surface resistance, R_s, of highly biaxially oriented high temperature superconductor (HTS) YBa₂Cu₃O_7– (YBCO) films. Measured R_s(77 K) turned out to be 4–5 times higher than in single crystals. The films were deposited by modified pulse-laser technique, J_c(77 K) = (3-6) × 10⁶ A/cm², onto LaAlO₃ substrates. R_s(T) was measured at 134 GHz and 20–100 K. TEM/HREM study of YBCO films deposited at T_s = 750°C–780°C revealed a reduction of edge dislocation density with T_s increase (from 2 · 10¹¹ to 10¹⁰ lines/cm²). YBCO films deposited at T_s = 780°C exhibited the smallest R_s(77 K, 134 GHz) < 120 m and the lowest density of dislocations detected by HREM and X-ray analysis. A nature of the dislocation effect is discussed within a model of local anisotropic elastic deformation in a vicinity of dislocation cores, where T_c variation and an enhancement of normal quasiparticle density are significant.     

Transport properties of InSe x flash evaporated thin films

Thin films of InSe _x were obtained by vacuum evaporation of polycrystalline materials onto substrates at moderate temperatures,T _s. Electrical properties of films grown from different stoichiometries of flash source materials are reported in this work. The temperature dependence of the conductivities shows two conduction regimes. The low temperature regime exhibits aT ^–1/4 conductivity dependence which fits well, using the Mott model, with an average localized states density value ofN(E _F ) 8×10¹⁸cm^–3eV^–1. Hall measurements as a function of temperature show that the predominant conduction mechanism is scattering by grain boundaries in polycystalline films.     

Thermal boundary resistance at interfaces between sapphire and indium

The Kapitza thermal boundary resistanceR _K has been measured above 1 K on several sapphire-indium boundaries prepared with different methods. By vapor-deposition of indium on sapphire and subsequent cold-welding with bulk indium, reproducible results were obtained. With the indium superconducting, we foundR _KT ^–3 within a certain temperature range, andR _K(1K)=42–44 and 30–36 cm² K/W for polished and rough sapphire surfaces, respectively. The calculation according to the acoustic mismatch theory yieldsR _K(1K)20 cm² K/W. Samples prepared by ultrasonic soldering also follow the relationR _KT ^–3 approximately, and giveR _K(1K)=14–17 cm² K/W. However, it is doubtful whether the calculation presuming a smooth boundary can be applied to the latter samples. Furthermore, we found that the method of vapor deposition and subsequent pouring on molten indium does not give good contacts. Moreover, the electronic contribution to the heat transfer across the boundary has been proved by ruling out other effects.     

Preparation of cobalt oxide films by plasma-enhanced metalorganic chemical vapour deposition

Co oxide films were prepared on glass substrates at 150–400°C by plasma-enhanced metalorganic chemical vapour deposition using cobalt (II) acetylacetonate as a source material. NaCl-type CoO films were formed at low O₂ flow rate of 7cm³ min^–1 and at a substrate temperature of 150–400°C. The CoO films possessed (100) orientation, independent of substrate temperature. Deposition rates of the CoO films were 40–47 nm min^–1. The CoO film deposited at 400 °C was composed of closely packed columnar grains and average diameter size at film surface was 60 nm. At high O₂ flow rate of 20–50 cm³ min^–1, high crystalline spinel-type Co₃O₄ films were formed at a substrate temperature of 150–400°C. The Co₃O₄ film deposited at 400°C possessed (100) preferred orientation and the film deposited at 150°C possessed (111) preferred orientation. Deposition rates of the Co₃O₄ films were 20–41 nm min^–1. Both Co₃O₄ films with (100) and (111) orientation had columnar structure. The shape and average size of the columnar grains at the film surface were different; a square shape and 35 nm for (100)-oriented Co₃O₄ film and a hexagonal shape and 60 nm for (111)-oriented film, respectively.     

The thermal diffusivity of ice and water between −40 and + 60° C

The thermal diffusivity _s of triply-distilled deionised water, and ^L of single-crystal ice along the c-axis, have been measured by Angström's method. The temperature range covered was –40 to +60° C. The results for water compare well with published data for the thermal conductivity, but for ice there are unexplained discrepancies. The linear relationships _s=(8.43–0.101 T) 10^–3 cm²/sec and _L=(1.35+0.002 T) 10^–3 cm²/sec where T° C is the temperature, fit the data obtained.     

Superconducting Density of States from the Magnetic Penetration Depth of Electron-Doped Cuprates La2−x Ce x CuO4−y and Pr2−x Ce x CuO4−y

From measurements of the magnetic penetration depth, (T), from 1.6 K to T _c in films of electron-doped cuprates La_2–x Ce _x CuO_4–y and Pr_2–x Ce _x CuO_4–y we obtain the normalized density of states, N _s(E) at T=0 by using a simple model. In this framework, the flat behavior of ^–2(T) at low T implies N _s(E) is small, possibly gapped, at low energies. The upward curvature in ^–2(T) near T _c seen in overdoped films implies that superfluid comes from an anomalously small energy band within about 3k _B T _c of the Fermi surface.     

Oxidation with Simon's reagent and HNO3/H2SO4 of turbostratic graphitic carbon prepared catalytically by nickel particles (20nm) in a carbonized resin

Four carbons, of heat treatment temperature 2800° C, were prepared from pure phenol formaldehyde resin (A-component), from this resin doped with nickel acetylacetonate (T_s-component), from a coal-tar pitch (T_p-component) and from the resin containing 30 wt% nickel particles (50 m) (G-component). These carbons are characterized by X-ray diffraction (d ₀₀₂ and L _c), high-resolution phase-contrast electron microscopy, Raman spectroscopy and oxidation with Simon's reagent and mixed acid HNO₃/H₂SO₄. The X-ray diffraction patterns show that graphitization increased AsT_pR=I (1355 cm^–1)/I(1575 cm^–1) indicate that the T_s-component has the least number of imperfections in the lattice. The T_s- and G-components react faster than other carbons in Simon's reagent but react slower in mixed acids. These faster rates are associated with lower activation energies. The Simon's reagent reacts preferentially with the more graphitic structures of the G-component unlike the T_s-component which appears to be structurally homogeneous. Rates of oxidation with mixed acid increase Gps相似文献   

Small polaron transport in V2O5–NiO–TeO2 glasses

Semiconducting glasses of the V₂O₅–NiO–TeO₂ system were prepared by the press-quenching method and their d.c. conductivities in the temperature range 300–450 K were measured. The d.c. conductivities at 395 K for the present glasses were determined to be 10^–7 to 10^–1 S m^–1, indicating that the conductivity increased with increasing V₂O₅ concentration. A glass of composition 67.5V₂O₅–2.5NiO–30TeO₂ (mol %) having a conductivity of 2.47×10^–2 S m^–1 at a temperature of 395 K was found to be the most conductive glass among the vanadium-tellurite glasses. From the conductivity–temperature relation, it was found that a small polaron hopping model was applicable at the temperature above _D/2 (_D: the Debye temperature); the electrical conduction at T>_D/2 was due to adiabatic small polaron hopping of electrons between vanadium ions. The polaron bandwidth ranged from 0.06 to 0.21 eV. The hopping carrier mobility varied from 1.1×10^–7 to 5.48×10^–5 cm² V^–1 s^–1 at 400 K. The carrier density is evaluated to be 1.85×10¹⁹–5.50×10¹⁹ cm^–3. The conductivity of the present glasses was primarily determined by hopping carrier mobility. In the low-temperature (below _D/2) regime, however, both Mott's variable-range hopping and Greaves intermediate range hopping models are found to be applicable.     

MOCVD of p-Cd x Hg1 – x Te/GaAs Heteroepitaxial Structures

Metalorganic chemical vapor deposition from Cd and Te alkyl compounds and Hg vapor is used to grow p-type Cd _x Hg_{1 – x} Te epitaxial layers on semi-insulating GaAs(111)Bsubstrates by the interdiffused multilayer process (alternating CdTe and HgTe layers) at a substrate temperature of 350°C, followed by postgrowth annealing. Layers are obtained with x = 0.2–0.4, 77-K carrier concentrations in the range (1–5) × 10¹⁶ cm^–3, and 77-K carrier mobilities from 200 to 400 cm²/(V s). The rocking curves of the epilayers have a full width at half maximum in the range 2–4 min of arc.     

Pyrosol deposition of fluorine-doped tin dioxide thin films

Fluorine-doped tin dioxide (SnO₂F) films were deposited from a tin tetrachloride solution in methanol utilizing a pyrosol deposition process. It is shown from thermodynamic calculations that the atmosphere during deposition is oxygen-rich and also suggested that chlorine and hydrogen chloride, which are produced during the deposition reaction, influence crystal growth. Detailed electrical, optical and structural properties of the material with respect to varying film thickness and substrate temperature are presented and discussed. Resistivity of the films deposited at 450 °C decreased from 6×10^–4 to 2×10^–4 cm, while the mobility increased from 14 to 45 cm²V^–1s^–1, respectively, when the film thickness was varied from 100 to 1650 nm. The carrier concentration was relatively unchanged for film thicknesses higher than 200 nm. Optimized SnO₂F films (600 nm) having a resistivity of 6×10^–4 cm, a carrier mobility of 20 cm²V^–1s^–1, a carrier concentration of 8×10²⁰ cm^–3 and a transmittance in excess of 80% are quite suitable as electrodes for amorphous silicon solar cells.     

Structural characterization of vacuum evaporated ZnSe thin films

Thermally evaporated ZnSe thin films deposited on glass substrates within substrate temperatures (T _s)at 303 K-623 K are of polycrystalline nature having f.c.c. zincblende structure. The most preferential orientation is along [111] direction for all deposited films together with other abundant planes [220] and [311]. The lattice parameter, grain size, average internal stress, microstrain, dislocation density and degree of preferred orientation in the film are calculated and correlated with T _s.     

Magnetic properties and thermal stability of Co-TM-Zr (TM=Nb,Ta, Mo,W, and Ni) amorphous sputtered films for magnetic heads

The magnetic properties and thermal stability Co-TM-Zr (TM=Nb, Ta, Mo, W, and Ni) amorphous films prepared by rf diode sputtering are investigated. Amorphous films with a homogeneous structure and coercive force H _c of less than 20 A m^–1 are obtained at an argon gas pressure of 0.3–1 Pa. The formation range of the amorphous films is broad in the systems containing Ta and Nb, whereas it is limited to the composition range greater than 4–5 at % of Zr in the systems of Mo, W, and Ni. The magnetostriction _s depends on the concentration ratio of Zr and the TM. Films with zero _s are obtained at concentration ratios C _zr/C _TM ranging from 0.3 for Co-Nb-Zr films to 1.5–1.7 for Co-W-Zr films. The crystallization temperature T _x is highest in Co-Ta-Zr films and lowest in Co-Mo-Zr films when _s is zero and both films have the same saturation magnetic flux density B _s . The anisotropy field H _k is highest in Co-Ni-Zr films and lowest in Co-Nb-Zr films. These results indicate that Co-Ta-Zr and Co-Nb-Zr amorphous films are suitable for use as magnetic head materials because of the Co-Ta-Zr film's high T _x and B _s , and the Co-Nb-Zr film's small ns and low H _K      

The critical constants of long-chain normal paraffins

Because of the recent availability of the critical constants of normal alkanes up to octadecane, some modifications in the estimation procedures for the critical constants have become necessary. It has been shown that the equation of Ambrose for the critical temperature of normal alkanes leads to the result that as n , the limiting value for the critical temperature is equal to the limiting value for the normal boiling point and the limiting value for the critical pressure is 1 atm. Currently, the CH₂ increment for the critical volume is considered constant. The recent data of Teja have shown that the CH₂ increment increases indefinitely in a homologous series until the critical volume reaches its limiting value. This has made the current procedure for estimating the critical volume obsolete. Taking into account the new measurements of Teja, we have now developed new equations for estimating the critical constants. The limiting values for an infinitely long alkyl chain for T _b, T _c, P _c, and V _c have been found to be 1021 K, 1021 K, 1.01325 bar, and 18618 cm³ · mol^–1, respectively. These new concepts have been applied to the estimation of various properties other than the critical constants.Nomenclature M Molar mass, kg·mol ^–1 - V _c Critical volume, cm³·mol^–1 - V ₁ Saturated liquid volume, cm³·mol^–1 - P _c Critical Pressure, bar - T _c Critical temperature, K - T _b Normal boiling point, K - T _B Boyle temperature, K - T _A Temperature at which the third virial coefficient is zero, K - V _c Limiting value of critical volume = 18,618 cm³ · mol^–1 - P _c Limiting value of critical pressure=1.01325 bar - T _c Limiting value of critical temperature = 1021 K - T _b Limiting value of normal boiling point = 1021 K - P _b Pressure at the normal boiling point, 1 atm - Z _c Critical compressibility factor - Z _c Limiting value for the critical compressibility factor = 0.22222 - R Gas constant, 83.1448×10^–6m³ · bar · K^–1 · mol^–1 - Acentric factor - X (T _c–T _b)/T _c - X ₁ (T _c–T)/T _c - X ₂ 1–(T _B/T)^5/4 - X ₃ 1–(T _A/T)^5/2 - Y P _c/RT _c - Surface tension, mN · m^–1 - B Second virial coefficient, cm³ · mol^–1 - B Limiting value for the second virial coefficient = –30,463 cm³ · mol^–1 - C Third virial coefficient, cm⁶ · mol^–2 - C _b Third virial coefficient at the normal boiling point, cm⁶ · mol^–2 - C _c Third virial coefficient at the critical temperature, cm⁶ · mol^–2 - C _B Third virial coefficient at the Boyle temperature, cm⁶ · mol^–2 - H _vb Enthalpy of vaporization at the normal boiling point, kJ · mol^–1 - n Number of carbon atoms in a homologous series - p Platt number, number of C-C-C-C structural elements - a, b, c, d, e, etc Constants associated with the specific equation - T _c ^* , T _b ^* , P _c ^* , V _c ^* , etc. Dimensionless variables     

Non-contact measurements of thermophysical properties of niobium at high temperature

Four thermophysical properties of both solid and liquid niobium have been measured using the vacuum version of the electrostatic levitation furnace developed by the National Space Development Agency of Japan. These properties are the density, the thermal expansion coefficient, the constant pressure heat capacity, and the hemispherical total emissivity. For the first time, we report these thermophysical quantities of niobium in its solid as well as in liquid state over a wide temperature range, including the undercooled state. Over the 2340 K to 2900 K temperature span, the density of the liquid can be expressed as _L (T) = 7.95 × 10³ – 0.23 (T – T _m)(kg · m^–3) with T _m = 2742 K, yielding a volume expansion coefficient _L(T) = 2.89 × 10^–5 (K^–1). Similarly, over the 1500 K to 2740 K temperature range, the density of the solid can be expressed as _s(T) = 8.26 × 10³ – 0.14(T – T _m)(kg · m^–3), giving a volume expansion coefficient _s(T) = 1.69 × 10^–5 (K^–1). The constant pressure heat capacity of the liquid phase could be estimated as C _PL(T) = 40.6 + 1.45 × 10^–3 (T – T _m) (J · mol^–1 · K^–1) if the hemispherical total emissivity of the liquid phase remains constant at 0.25 over the temperature range. Over the 1500 K to 2740 K temperature span, the hemispherical total emissivity of the solid phase could be rendered as _TS(T) = 0.23 + 5.81 × 10^–5 (T – T _m). The enthalpy of fusion has also been calculated as 29.1 kJ · mol^–1.     

Amorphous indium tungsten oxide films prepared by DC magnetron sputtering

Indium-tungsten-oxide (IWO) films were prepared by dc magnetron sputtering at ambient substrate temperature (T_s). Characteristics of the films were compared with those of In₂O₃–SnO₂ (ITO) thin films prepared under the same condition. The sputter-deposited IWO films have entirely amorphous structure with an average transmittance of over 85% in the visible range and exhibit a minimum resistivity of 3.2 × 10^–4cm at W content [W/(In + W)] of 0.57 at.%. An in-situ heating X-ray diffraction measurement have shown that the crystallization temperature of IWO films is higher than those of ITO films (150–160C) and increases with increasing W content. This enabled a smooth amorphous surface of IWO films as compared with a rough surface of partially crystallized ITO films as revealed by an atomic force microscopy. IWO films are useful for transparent electrode of organic light emitting diode and polymer LCDs because of the low resistivity, high transparency and smooth surface obtainable by the conventional dc magnetron sputtering at room temperature.     

Electrical conductivity in hot-pressed nitrogen ceramics

The a.c. and d.c. electrical conductivities of some hot-pressed polycrystalline nitrogen ceramics have been measured between 400 and 1000° C. The materials examined were Si₃N₄, 5.0% MgO/Si₃N₄ and two sialons, Si_(6–z) · Al _z · O _z · N_(8–z) having z 3.2 and z 4.0 respectively. The electrical behaviour of all the materials showed similar general features. The d.c. conductivities were about 10^{–10 –1} cm^–1 at 400° C and rose to between 10^–6 and 10^{–5 –1} cm^–1 at 1000° C. The a.c. Data, taken over the frequency range 15 Hz to 5 kHz showed that below about 500° C the a.c. conductivity ( _a.c.) varied with frequency as _a.c. ^s where 0.7 _d.c.) agreed well with the relation _d.c. = A exp(–B/T ^1/4). Above 700° C both the a.c. and d.c. conductivities followed log T ^–1. Hall effect and thermoelectric power measurements enabled the Hall mobility to be estimated as less than 10^–4 cm² V^–1 sec^–1 at 400° C and showed that the materials were all p-type below 900° C and n-type above 900° C. The electrical properties of all four materials are consistent with the presence of a glassy phase.