共查询到20条相似文献,搜索用时 46 毫秒
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A multilevel grating coupler based on silicon-on-insulator (SOI) material structure is proposed to realize the coupling between waveguide and waveguide or waveguide and fiber. This coupler is compatible with the current fabrication facilities for complementary metal oxide semiconductor (CMOS) technology with vertical coupling. This structure can realize coupling when the beams with transverse electric (TE) polarization and transverse magnetic (TM) polarization are incident at the same time. The influences of the grating coupler parameters including wavelength, the thickness of waveguide layer, the thickness of SiO2 layer and the number of steps on the TE mode and TM mode coupling efficiencies are discussed. Theory researches and simulation results indicate that the wavelength range is from 1533 nm to 1580 nm when the TE mode and TM mode coupling efficiencies are both more than 40% as the grating period is 0.99 μm. The coupling efficiencies of the incident TE and TM modes are 49.9% and 49.5% at the wavelength of 1565 nm, respectively, and the difference between them is only 0.4%. 相似文献
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《Photonics Technology Letters, IEEE》2009,21(5):268-270
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《Photonics Technology Letters, IEEE》2009,21(22):1698-1700
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《Photonics Technology Letters, IEEE》2009,21(16):1103-1105
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We present the design of a diffractive grating structure and get the optimal parameters which can achieve more than 75% coupling efficiency (CE) between single-mode fiber and silicon-on-insulator (SOI) waveguide through 2D finite-different time-domain (FDTD) simulation. The proposed architecture has a uniform structure with no bottom reflection element or silicon overlay. The structure, including grating couplers, adiabatic tapers and interconnection waveguides can be fabricated on the SOI waveguide with only a single electron-beam lithography (ICP) step, which is CMOS-compatible. A relatively high coupling efficiency of 47.2% was obtained at a wavelength of 1562 nm. 相似文献
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《Quantum Electronics, IEEE Journal of》2009,45(6):654-660
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Van Laere F. Claes T. Schrauwen J. Scheerlinck S. Bogaerts W. Taillaert D. O'Faolain L. Van Thourhout D. Baets R. 《Photonics Technology Letters, IEEE》2007,19(23):1919-1921
We report experimental results on compact and broadband focusing grating couplers, both in silicon-on-insulator (SOI) and gold on SOI. An eight-fold length reduction of the coupling structure from fiber to photonic wire in SOI, as compared to a linear grating and adiabatic taper, is obtained, without performance penalty. A proof of principle is given for a focusing grating coupler in gold on SOI, with 20% fiber-to-focus efficiency. 相似文献
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设计、仿真并制备了一种用于光纤布拉格光栅(FBG)解调的阵列波导光栅(AWG)芯片。该芯片基于SOI衬底进行制备,并在AWG的输入/输出波导、阵列波导与平板波导之间采用双刻蚀结构进行优化。经仿真,该AWG的插入损耗为1.5dB,串扰小于 -20dB,3dB带宽为1.5nm。优化后的AWG芯片采用深紫外光刻技术、电感耦合等离子体等技术制备。经测试,该AWG的插入损耗为3dB,串扰小于 -20dB,3dB带宽为2.3nm。搭建了基于该AWG的解调系统,解调实验结果表明,该系统在0.8nm范围内的解调精度可达11.26pm,波长分辨率为6pm。 相似文献
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A nanostructured hollow optical waveguide based on high-index contrast grating (HCG) embedded SOI is proposed. An ultra-low propagation loss of 1.22 dB/m even at narrow, 1-\(\upmu \)m thick, air-core is reported. A high-performance photodetection is realized by the introduction of hollow core in form of intrinsic region in the photodetection (PIN) layer within HCG-assisted narrow-core waveguide. A sufficiently high responsivity of 0.8 A/W and quantum efficiency of 64% are obtained at 1550-nm which is possible because of the presence of surface modes within HCG which get coupled in the photodetection layer leading to a strong optical confinement in that layer. High reflectivity, small penetration length and coupling of lateral surface modes in HCG make it possible to offer improved waveguiding and hence photodetection. 相似文献
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He J.-J. Koteles E.S. Lamontagne B. Erickson L. Delage A. Davies M. 《Photonics Technology Letters, IEEE》1999,11(2):224-226
An integrated polarization compensator for wavelength-division-multiplexed waveguide demultiplexers is proposed and experimentally demonstrated. It is simple to fabricate, has many advantages over previously reported polarization compensation schemes, and is effective in both etched diffraction grating and arrayed waveguide grating based devices 相似文献
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《Photonics Technology Letters, IEEE》2009,21(11):739-741
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In this work, we design a silicon-on-insulator (SOI) sidewall grating with tunable wavelength, delay, and bandwidth through thermal tuning. Incorporating uniform sidewall corrugations and a linearly chirped rib waveguide, the thermo-optic effect imposed on chirped rib waveguide changes the effective refractive index, due to the resultant of the temperature gradient. Consequently, tunable wavelength, delay, and bandwidth in SOI sidewall grating are achieved. In the numerical simulations, the designed SOI grating is demonstrated with a tunable wavelength from 1 560.7 nm to 1 561.9 nm, a tunable delay from 0 to 38 ps, and a tunable bandwidth from 1 nm to 1.5 nm. 相似文献
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Van Laere F. Roelkens G. Ayre M. Schrauwen J. Taillaert D. Van Thourhout D. Krauss T.F. Baets R. 《Lightwave Technology, Journal of》2007,25(1):151-156
We present high-efficiency grating couplers for coupling between a single-mode fiber and nanophotonic waveguides, fabricated both in silicon-on-insulator (SOI) and InP membranes using BenzoCycloButene wafer bonding. The coupling efficiency is substantially increased by adding a gold bottom mirror to the structures. The measured coupling efficiency to fiber is 69% for SOI grating couplers and 56% for bonded InP membrane grating couplers 相似文献
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Single-mode and polarization-independent silicon-on-insulator waveguides with small cross section 总被引:1,自引:0,他引:1
Seong Phun Chan Ching Eng Png Soon Thor Lim Reed G.T. Passaro V.M.N. 《Lightwave Technology, Journal of》2005,23(6):2103-2111
The fabrication restrictions that must be imposed on the geometry of optical waveguides to make them behave as single-mode devices are well known for relatively large waveguides, with shallow etch depth. However, the restrictions for small waveguides (/spl sim/1 /spl mu/m or less in cross section) are not well understood. Furthermore, it is usually a requirement that these waveguides are polarization independent, which further complicates the issues. This paper reports on the simulations of the conditions for both single-mode behavior and polarization independence, for small and deeply etched silicon-on-insulator (SOI) waveguides. The aim is to satisfy both conditions simultaneously. The results show that at larger waveguide widths, waveguide etch depth has little effect on the mode birefringence because the transverse-electric (TE) mode (horizontal-polarized mode) is well confined under the rib region. However, at smaller rib widths, the etch depth has a large influence on birefringence. An approximate equation relating the rib-waveguide width and etch depth to obtain polarization-independent operation is derived. It is possible to achieve single-mode operation at both polarizations while maintaining polarization independence for each of the waveguide heights used in this paper but may be difficult for other dimensions. For example, a 1-/spl mu/m SOI rib waveguide with an etch depth of 0.64 /spl mu/m and rib width of 0.52 /spl mu/m is predicted to exhibit such characteristics. 相似文献
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Low-Footprint Optical Interconnect on an SOI Chip Through Heterogeneous Integration of InP-Based Microdisk Lasers and Microdetectors 总被引:1,自引:0,他引:1
《Photonics Technology Letters, IEEE》2009,21(8):522-524
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《Photonics Technology Letters, IEEE》2009,21(8):516-518