4～8GHz倍频程GaAs FET VCO

本文叙述了采用单变容管调谐的4～8GHz共漏反沟道GaAs FET VCO的设计和研究结果。振荡器的直接输出功率大于16.5dBm,功率平坦度为±2dBm,线性度优于3:1(电调灵敏度之比)。并给出了振荡器其他性能。     

3mm谐波振荡器的电调谐

本文在分析谐波振荡器的电路特性的基础上,针对谐波振荡器的电调谐问题,提出了“电调基频,提取谐波”的新构想,并以该构想指导振荡器的电路设计。最后,采用国产参放变容管作为电调元件于1988年在国内首次研制成功了3mm电调谐波振荡器。该振荡器最大电调带宽超过4GHz;当电调带宽等于±100MHz时,输出功率大于10mW;当电调带宽等于±500MHz时,输出功率大于5mW。     

C波段高频率稳定度宽带FET电压控制振荡器

本文叙述了用场效应振荡管和砷化镓常γ电调变容二极管及恒温控制电路等构成的C波段高频率稳定度宽带场效应管电压控制振荡器(VCO)的设计和电性能.通过合理的设计,VCO在4～6～8GHz的频率范围内,得到输出功率大于30mW,功率平坦度小于1dB,频率稳定度在10~(-5)量级.     

2cm波段耿管电调振荡器

报道了采用部分集成方案研制的Ｋｕ波段变容管调谐耿管振荡器（ＶＣＯ）及两管功率合成器。研制的两只中心频率为１６和１７ＧＨＺ的电调振荡器，其中１６ＧＨＺ的电调带宽大于６４０ＭＨｚ，输出功率大于１１０ｍＷ，功率起伏小于０．６ｄＢ；而１７ＧＨｚ的电调带宽大于２３０ＭＨｚ，输出功率大于１１０ｍＷ，功率起伏小于０．９ｄＢ。两管功率合成器的振荡频率为１７．３ＧＨｚ，输出功率达２５０ｍＷ．     

3毫米电调振荡器

3毫米电调振荡器是3毫米锁相技术中必不可少的关键部件,采用WT62型体效应二极管作振荡元件,砷化镓突变结变容管作电调元件。业已研制出工作频率在100GHz时,电调带宽1.4GHz,输出功率大于10mW的电调振荡器。     

高稳定度C波段压控振荡器设计与实验研究

文章介绍了实用型C波段变容器管调谐耿氏振荡器电路结构和理论计算,给出了实验结果:输出功率40～180mW,机调带宽400～900MHz,电调范围40～160MHz,频率温度系数0.01～0.08MHz/℃,功率温度系数0.009～0.016dB/℃。文章分析了影响振荡器电调特性及频稳度的因素,给出了改善电调特性和提高频稳度的实验方法。实验结果及工程应用表明,振荡器稳定性好,可靠性高,具有实用价值。     

X波段变容管调谐GaAs FET集成VCO的设计

本文介绍了一种宽带FET VCO的S参数设计理论和方法.根据这一理论和方法,用我所的低噪声小功率FET和电调变容管,研制成了X波段变容营调谐的GaAs FBT混合集成VCO.在8GHz频段内,获得500MHz的电调范围,在整个电调范围内,输出功率大于10mW,功率起伏小于0.5dB,直流转换效率大于10%,噪声性能与普通速调管相当,而且体积小,重量轻,成本低.     

L波段低相位噪声压控振荡器

对微波晶体管振荡器的相位噪声进行了分析。为达到压控振荡器的低相位噪声要求,采用了低电平振荡经放大后输出的设计方案。实现的微带压控振荡器工作于L波段. 相对电调带宽大于10％,不加介质谐振器其SSB相位噪声约达到一90dBC/Hz/10kHz;经加放大输出功率达到10mW以上,功率平坦度≤±0.7dB. 在-20～+60℃范围内正常工作,频率温度稳定性为6×10~(-5);本压控振荡器已应用于频率合成器中。     

K_a波段2GH_z电调谐VCO

<正> M A—87912系列电调耿氏二极管振荡器性能:在26.5—40GH_2波段电调带宽大于2GH_(zo)标准输出功率在—30℃—+70℃范围是65mW,(图1)调谐范围的功率平     

X波段介质稳频电调FET振荡器

本文介绍了X波段介质稳频电调FET振荡器(FET DR VCO)的研制。采用反馈型电路结构,获得振荡频率为7774MHz,输出功率Po>10dBm,线性电调带宽>42MHz(功率变化△P<1dB),电调灵敏度为3.0MHz/V,在-20℃～+60℃范围内,频率温度稳定度<±5.7ppm/℃。     

Analytic Model for Varactor-Tuned Waveguide Gunn Oscillators (Short Papers)

An analytic model for electronic tuning of an X-band waveguide transferred-electron oscillator is presented. The oscillator is electronically tunable by a varactor, and mechanically tunable by movement of a short circuit. The model is used to predict oscillation frequency, maximum electronic tuning range, and electronic tuning versus varactor bias voltage. Two different methods, the "zero reactance theory" and the Slater perturbation theory, are used to calculate the electronic tuning. The results of these calculations are compared to experimental results for two different oscillator configurations.     

A circuit technique for broadbanding the electronic tuning range of Gunn oscillators

A circuit technique is described whereby the electronic tuning range obtained by varactor tuning solid-state oscillators, such as Gunn oscillators, can be improved. The principle of the technique has been demonstrated by doubling the tuning range obtained from a coaxial X-band Gunn oscillator using distributed circuit elements. An analytical expression for the improved tuning range is presented and predictions for the improvement in an existing microstrip X-band oscillator using chip devices given.     

Millimeter-Wave (W-Band) Quartz Image Guide Gunn Oscillator

Dielectric image-guide Gunn oscillator using fused quartz as the guide material has been investigated at frequencies around 94 GHz. Computer-controlled CO/sub 2/ laser cutting of quartz to the designed image-guide patterns has also been achieved. A resonant disk and pin bias circuit was used to tune the oscillator to an output power of 5 mW at the oscillation frequency of 94.2 GHz. An electronic frequency tuning of 350 MHz was measured with the oscillation characteristics similar to waveguide cavity oscillators. By varying the bias circuit disk and pin parameters, the Gunn-oscillator tuning characteristics have also been recorded for the future circuit performance optimization.     

Two different mode interactions in an electron tube with a Fabry—Perot resonator—The Ledatron

An electron tube with a Fabry-Perot resonator for the generation of millimeter and submillimeter waves, the Ledatron, has been investigated both theoretically and experimentally. Two different mode interactions, Fabry-Perot mode and surface wave mode, were predicted and found to exist. These two modes can be separated by proper selection of the mirror spacing of the Fabry-Perot resonator in the tube. These two mode oscillations have different characteristics. In the case of the Fabry-Perot mode, the oscillating frequency is tuned mainly by variation of the mirror spacing, that is, mechanical tuning is predominant. On the other hand, in the case of the surface wave mode, electronic tuning predominates. For gratings of the same physical size, the surface wave mode oscillator needs a larger electron accelerating voltage than the Fabry-Perot mode oscillator in order to obtain the same wavelength. The experimental results are in good agreement with our theory of operation.     

Cavity Stabilization and Electronic Tuning of a Millimeter-Wave IMPATT Diode Oscillator by Parametric Interaction

A new technique is proposed by which both noise reduction and electronic tuning of a millimeter-wave solid-state oscillator can be realized by injecting an arbitrary low-frequency (several hundred megahertz or beyond) signal to the oscillator element which is provided with an additional high-Q cavity. This method has much wider tuning bandwidth than that of the conventional subharmordc injection locking technique. Presented are both experimental results and some theoretical interpretations by using an IMPATT diode oscillator.     

U-band shield suspended-stripline Gunn DRO and VCO

A millimeter-wave IC dielectric resonator oscillator (DRO) is proposed. Equations that give the resonant frequency of the dielectric resonator DR in suspended stripline (SSL) are derived. A U-band voltage-controlled oscillator (VCO) with varactor tuning also has been developed. The Gunn diode and varactor used in both of the oscillators are commercially available packaged devices. Restrictions on the performance of the oscillators imposed by packaged and mounted networks and the self-characteristics of the solid-state devices have been analyzed. An electronic tuning range greater than 1000 MHz with an output power exceeding 15 dBm across the bandwidth in the 53-GHz region has been realized for the SSL VCO. An SSL DRO with an output power of more than 17 dBm and a mechanical tuning range of 1.5 GHz in the 54-GHz region has been achieved     

Microwave Gunn oscillator tuned electronically over 1 GHz

A J band Gunn oscillator, tuned by a varactor, has been constructed. It can be mechanically tuned over 3 GHz, and an electronic tuning range of 1 GHz has been achieved with an average power output of 15 mW and less than 1 dB variation.     

Analysis of a Waveguide Mounting Configuration for Electronically Tuned Transferred-Electron-Device Oscillators and its Circuit Application

Theoretical analysis of a waveguide-post mounting configuration employed for high electronic (varactor) tuning of a transferred-electron-device oscillator is presented. The resulting two-port-coupling network representation is also used to derive the impedance of the post structure as an obstacle to the dominant TE/sub 10/ mode in the waveguide. Obstacle measurements conducted on the post structure for the incident TE/sub 10/ mode are found to be in very good agreement with the theory. This network representation is then applied to a practical transferred-electron-device oscillator reported elsewhere. It has been able to successfully explain the characteristic features of the oscillator. It is observed that the main source of discrepancy between the theoretical and experimental characteristics could be attributed to a lack of knowledge of the precise values of the package parasitic elements. The nature of the theoretical varactor-tuning characteristic predicted by the model is discussed and indicated for a particular configuration.     

A tunable microwave transistor oscillator with a resonator based on higher order bulk acoustic modes

The characteristics of a transistor oscillator of a set of frequencies stabilized with a frequency-tuned multifrequency resonator based on higher-order bulk acoustic modes are investigated. Variants of discrete electronic tuning of the oscillator frequency are presented.     

Electronic tuning of stable transferred electron oscillators

The problem of electronic tuning of microwave osciilator structures characterized by high energy storage and hence low noise is considered. The evolution of a wide-band varactor tuned J-band oscillator is described, and analytical criteria are presented which determine the position of the varactor diode and the theoretical maximum tuning range available including Varactor loss. Experimental results confirm the validity of the circuit model used for the proposed oscillator structures.