用CMOS工艺改善集成开关电容DC-DC变换器的特性

介绍了一种具有改进电路结构和改进工艺的单片集成3.3V/1.2V开关电容DC-DC变换器,其控制脉冲频率和固定导通比分别为10MHz和0.5.为了提高变换器的输出电流,采用CMOS工艺来制造电路中的开关器件和改进的互补型电路结构.使用Hspice电路仿真软件得到的仿真结果表明改进变换器的单个单元电路和互补型电路可使输出电流分别达到12.5mA和26mA,且后者的功率转换效率为73%,输出电压纹波小于1.5%.变换器在日本东京大学的标准Rohm 0.35μm CMOS工艺线上投片试制,测试结果显示,使用CMOS开关的变换器单元电路的输出电流为9.8mA.     

嵌入式开关电容DC-DC变换器的新颖控制技术

提出了一种针对单片集成开关电容DC-DC变换器进行优化的设计方案.阐述了开关电容DC-DC变换器电路的拓扑结构及其基本工作原理,给出了单片集成开关电容DC-DC变换器的等效电阻控制方法.考虑到集成工艺的兼容性问题,在电路设计时,用n沟MOSFET替代二极管;为了改善变换器的输出特性,在标准2μm p阱双层多晶硅单层金属CMOS工艺中增加了一次MOSFET阈值电压的调整步骤,实现了升压开关电容DC-DC变换器的单片集成.芯片面积为0.4mm2,测试结果显示,在变换器输入电压为3V,输出电压为5V,电路开关频率为9.8MHz时,输出功率为0.63mW,效率达到68%.     

一种改进型高性能电流舵电荷泵电路设计

提出一种改进型高性能单端电荷泵电路 ,该电路基于电流舵结构 ,使用运放将偏置电路与充放电电路分开。该电路具有低的输出抖动、宽的电源范围 ,使用级连电流镜像消除过冲注入电流。基于 CMOS0 .3 5工艺 ,用 SPECTRE对该电路进行仿真 ,改进后的电路可消除 1.2 m A的注入电流 ,稳定工作在 2 5 /12 .5 MHz下 ,其最低工作电压为 2 .2 V,静态功耗为 0 .44m A,达到设计目标。     

嵌入式开关电容DC-DC变换器的新颖控制技术

提出了一种针对单片集成开关电容DC-DC变换器进行优化的设计方案.阐述了开关电容DC-DC变换器电路的拓扑结构及其基本工作原理,给出了单片集成开关电容DC-DC变换器的等效电阻控制方法.考虑到集成工艺的兼容性问题,在电路设计时,用n沟MOSFET替代二极管;为了改善变换器的输出特性,在标准2μm p阱双层多晶硅单层金属CMOS工艺中增加了一次MOSFET阈值电压的调整步骤,实现了升压开关电容DC-DC变换器的单片集成.芯片面积为0.4mm2,测试结果显示,在变换器输入电压为3V,输出电压为5V,电路开关频率为9.8MHz时,输出功率为0.63mW,效率达到68%.     

集成于电流模降压型DC-DC变换器的电流采样电路

针对电流模降压型DC-DC变换器,提出了一种新颖的CMOS片上电流采样电路.该电路结构简单,易于集成,功率损耗小,且通过MOSFET的匹配使采样比例几乎不受温度、模型以及电源电压变化影响.并通过进一步的优化设计,使得响应速度更快,工作电压进一步降低.提出的采样电路在一款基于0.5μm CMOS工艺没计的单片电流模降压型DC-DC变换器中进行了验证.在2.5～5.5V的电压范围,0～2A的负载范围内芯片工作稳定,瞬态响应良好,且效率高达96%.     

集成于电流模降压型DC-DC变换器的电流采样电路

针对电流模降压型DC-DC变换器,提出了一种新颖的CMOS片上电流采样电路.该电路结构简单,易于集成,功率损耗小,且通过MOSFET的匹配使采样比例几乎不受温度、模型以及电源电压变化影响.并通过进一步的优化设计,使得响应速度更快,工作电压进一步降低.提出的采样电路在一款基于0.5μm CMOS工艺没计的单片电流模降压型DC-DC变换器中进行了验证.在2.5～5.5V的电压范围,0～2A的负载范围内芯片工作稳定,瞬态响应良好,且效率高达96%.     

一种16位600 MS/s电流舵D/A转换器的设计

基于0.18 μm CMOS工艺,设计了一种16位600 MS/s电流舵D/A转换器。该D/A转换器为1.8 V/3.3 V双电源供电,采用并行输入、差分电流输出的四分段(5+4+3+4)电流舵结构。采用灵敏放大器型锁存器可以精确锁存数据,避免出现误码;由恒定负载产生电路和互补交叉点调整电路组成的同步与开关驱动电路,降低了负载效应引起的谐波失真,同时减小了输出毛刺;低失真电流开关消除了差分开关对共源节点处寄生电容对D/A转换器动态性能的影响。Spectre仿真验证结果表明,当采样频率为625 MHz,输入信号频率为240 MHz时,该D/A转换器的SFDR为78.5 dBc。     

一种CMOS电荷泵电路的设计

本文采用SMIC 0.18m CMOS工艺分析设计了一种CMOS电荷泵电路,电路采用PMOS与NMOS构成的互补CMOS开关,有效地减小了电流失配、电荷泄漏、开关效应等电荷泵的非理想效应。仿真结果现实,在1.8V电源电压条件下,输出电压线性度良好,电荷泵电路的静态功耗仅为1.44m W;电荷泵上拉和下拉电流变化较小,电流失配率约为1.3%。     

150Ms/s、6bit CMOS数字工艺折叠、电流插值A/D转换器

在1.2μm SPDM标准数字CMOS工艺条件下,实现6bit CMOS折叠、电流插值A/D转换器;提出高速度再生型电流比较器的改进结构,使A/D转换器(ADC)总功耗下降近30%;提出一种逻辑简单易于扩展的解码电路,以多米诺(Domino)逻辑实现.整个ADC电路中只使用单一时钟.在5V电压条件下,仿真结果为采样频率150-Ms/s时功耗小于185mW,输入模拟信号和二进制输出码之间延迟小于2个时钟周期.     

150Ms/s、6bit CMOS数字工艺折叠、电流插值A/D转换器

在1.2μm SPDM标准数字CMOS工艺条件下,实现6bit CMOS折叠、电流插值A/D转换器;提出高速度再生型电流比较器的改进结构,使A/D转换器(ADC)总功耗下降近30%;提出一种逻辑简单易于扩展的解码电路,以多米诺(Domino)逻辑实现.整个ADC电路中只使用单一时钟.在5V电压条件下,仿真结果为采样频率150-Ms/s时功耗小于185mW,输入模拟信号和二进制输出码之间延迟小于2个时钟周期.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first