脉冲诱导放电气体激光器

研究了一种实现新放电方法:诱导圆筒放电的可能性.该放电方法基于不同的粒子数反转机理,使用不同的原子和分子传能模式泵浦气体激光器.研制了用于气体中的脉冲诱导圆筒放电(脉冲感应耦合等离子体)激励系统,并对其进行了实验研究.首次实现了基于原子和分子不同传能模式的4种脉冲诱导激光器,其激励特性是光束发散角小,不同脉冲间的非稳定...     

等离子体吸收对飞秒激光烧蚀绝缘材料的影响

以自由电子运动的速率方程模型为基础,研究了飞秒脉冲激光对绝缘材料的烧蚀机理,考虑了等离子体对激光能量的吸收效应,建立了激光强度与电子数密度及等离子体吸收系数三者相互耦合的数学模型,计算出飞秒激光烧蚀绝缘材料时的烧蚀阈值,分析了考虑等离子体吸收效应对烧蚀阈值的影响,通过与不考虑等离子体吸收所得结果相比较说明该效应是影响烧蚀阈值的一个重要因素.     

氙灯的瞬态放电特性研究

建立了求解氙灯LC供电网络电路模拟计算程序,与以往的模型相比,我们在MEH理论的基础上考虑了氙灯放电过程中等离子体直径随时间的变化关系,因而可以更准确地研究大口径氙灯的放电特性。根据国内外的实验和计算结果对模拟程序进行了校核。结果表明：在氙灯放电开始时,等离子体放电柱的膨胀可以不受灯壁的影响;在放电后期,放电柱的膨胀要受灯壁的影响,因此,等离子体的膨胀过程对电流波形有影响。但在大能量长脉冲放电情况下,大口径氙灯的等离子体也可以充满内径。     

微小等离子体反应器的制作及性能测试

设计了基于并行探针驱动的扫描刻蚀加工系统,用于微纳米尺度的刻蚀加工.研究了系统的核心器件—微小等离子体反应器的电学特性和发射光谱特性,以了解反应器中产生的反应等离子体性能的变化规律.基于微机电系统(MEMS)加工工艺制备了中间带有倒金字塔形状微型空腔的金属-绝缘体-金属3层结构的微小等离子体反应器.搭建了可测量等离子体伏安特性和发射光谱特性的实验系统,对放电气体为SF6,工作气压在5～12 kPa,直流驱动模式下的微小等离子体反应器的电学和光谱特性进行了测试.实验结果表明,放电电流随着放电电压的增加而近似线性递增,放电电流由5 kPa时的2.1～2.82 μA递增到12 kPa时的3.6～4.2 μA,表明所产生的微小等离子体处于异常辉光放电模态.当器件特征尺寸由150 μm减小至30 μm时,微小等离子体发射光谱中氟原子特征谱线(703.7 nm)峰值增大了约56％,表明微小等离子体的浓度随尺度缩小而增强.实验结果表明,设计的微小等离子体反应器基本满足扫描刻蚀加工所需的高浓度等离子体源的性能要求.     

空间能量传导通道模型的实验和理论成果

给出了研制空间能量传递的超长传导通道技术的实验和理论工作结果.分析了高重频脉冲激光系统和这一项目中的最重要的组件.基于创建长距离能量传递传导通道的思想,讨论了光学系统和尘埃等离子体,研究了测试等离子体导电性的实验方法和新的测量数据.最后,阐述了"脉冲发生器"的新应用.     

用于低能量除颤的除颤器设计

设计了用于低能量除颤的,可灵活调节放电脉冲宽度和准确测量实际放电能量的除颤器.该除颤器的放电波形为双相指数截尾波,通过人工设置,可释放1～3组双相指数截尾波;放电脉冲的宽度、各脉冲之间的时间间隔可人工灵活调节,最小步长为0.1 ms;可测量放电前后储能电容电压,再根据储能电容的容值准确地计算出实际放电能量.该除颤器在双相指数截尾波的基础上,通过调节放电脉冲的宽度、各脉冲之间的时间问隔及脉冲数量,优化放电波形,达到低能量除颤的目的.已在20余例低能量除颤的动物实验中应用,各项功能符合设计要求.     

基于小波分析的局部放电信号消噪研究

由于强烈的窄带周期干扰、白噪声和脉冲干扰等外部干扰,局部放电信号提取是变压器局部放电在线监测技术中的难题,应用小波去噪技术研究了局部放电在线监测中的噪声抑制方法,对母小波及阈值的选择进行了研究,通过以MATLAB为平台对几种母小波比对分析和基于小波变换的阈值去噪仿真实验,验证了小波去噪比较理想的效果.     

高性能脉冲氙灯放电过程分析及实验研究

脉冲氙灯是一种新型分析仪器光源,本文利用量子理论以及气体放电理论分析了脉冲氙灯放电过程,设计了放电测试系统,实验测定了放电过程中的电压、电流和光脉冲信号。结果表明:在预电离阶段自由电子浓度较低,能量较低;气体放电阶段灯内形成电子崩,使得自由电子浓度的增大,放电电流迅速上升,电压下降;离子复合时释放出光子形成光脉冲。氙灯脉冲的光能量输出和光谱特性与复合电子能量、氙气复合能级有直接关系,当输入能量与氙灯的能耗不一致的时候,将导致充电电容反复充放电而是电路产生阻尼振荡。本文对于理解脉冲氙灯的闪烁光发射过程,优化放电回路设计和氙灯制造具有重要意义。     

等离子体对碳氢燃料点火延迟时间影响的研究进展

应用等离子体减小碳氢燃料点火延迟时间的优越性已经越来越明显。论文总结了点火延迟时间的主要定义和表达方式,分析了等离子体影响碳氢燃料点火过程的重要机理、简化模型以及主要的实验装置,并列举了前面研究者利用等离子体影响碳氢燃料点火延迟时间的实验研究,最后提出了高压纳秒脉冲放电等离子体的应用前景广阔。     

9.3μm脉冲CO_2激光倍频实验

介绍了利用9.3 μm脉冲TEACO_2激光通过AgGaSe_2晶体二次谐波产生(SHG)技术实现4.65 μm中红外波段激光输出的实验研究.根据非线性光学原理和倍频技术的基本要求,通过有针对性的技术手段选择TEACO_2激光器的输出谱线并控制脉冲波形的时间分布,使之满足激光倍频实验对泵浦脉冲光源在波长和输出时间分布上的基本要求,并以此为基波光源进行了产生二次谐波的实验研究.实验结果显示,即使是相同的AgGaSe_2倍频晶体材料,也会由于生产厂商的不同而具有完全不同的表面破坏阈值行为,而相同点是体损伤阈值均大于表面损伤阈值.实验获得倍频输出最大能量为12.9 mJ;倍频输出最高平均功率为940 mW. 4.65 μm中红外波段激光输出的实验研究.根据非线性光学原理和倍频技术的基本要求,通过有针对性的技术手段选择TEACO_2激光器的输出谱线并控制脉冲波形的时间分布,使之满足激光倍频实验对泵浦脉冲光源在波长和输出时间分布上的基本要求,并以此为基波光源进行了产生二次谐波的实验研究.实验结果显示,即使是相同的AgGaSe_2倍频晶体材料,也会由于生产厂商的不同而具有完全不同的表面破坏阈值行为,而相同点是体损伤阈值均大 表面损伤阈值.实验获得倍频输出最大能量为12.9     

Direct coupling of pulsed radio frequency and pulsed high power in novel pulsed power system for plasma immersion ion implantation

A novel power supply system that directly couples pulsed high voltage (HV) pulses and pulsed 13.56 MHz radio frequency (rf) has been developed for plasma processes. In this system, the sample holder is connected to both the rf generator and HV modulator. The coupling circuit in the hybrid system is composed of individual matching units, low pass filters, and voltage clamping units. This ensures the safe operation of the rf system even when the HV is on. The PSPICE software is utilized to optimize the design of circuits. The system can be operated in two modes. The pulsed rf discharge may serve as either the seed plasma source for glow discharge or high-density plasma source for plasma immersion ion implantation (PIII). The pulsed high-voltage glow discharge is induced when a rf pulse with a short duration or a larger time interval between the rf and HV pulses is used. Conventional PIII can also be achieved. Experiments conducted on the new system confirm steady and safe operation.     

Dynamic photolytical actinometry of the vacuum-ultraviolet radiation produced by multichannel surface discharges of submicrosecond duration

Absolute measurements of the vacuum-ultraviolet (VUV) radiation power produced by a planar broadband optical source of submicrosecond light pulse duration are carried out in the transient regime of formation of a photodissociation (bleaching) wave in a photodecomposing absorptive medium. The source is based on a multichannel surface discharge initiated in ArN(2) gas mixtures on the area of approximately 0.1 m(2). The energetic characteristics of the produced VUV radiation are determined on the basis of spatially and temporally resolved observations of the pulsed photolysis of XeF(2) vapors. It is shown that the photon flux intensity produced by the source within the spectral range of 120-200 nm reaches 1.1 x 10(23) photonscm(2) s corresponding to the effective brightness temperature of discharge plasma of 20 kK and to the intrinsic efficiency of the discharge VUV emission of 3.2%. Numerical simulations of the photolysis process show a rather weak sensitivity of the results to the fraction of discharge radiation emitted into the line spectrum, as well as to the angular distribution of emitted radiation. The spectral band of measurements can be selected according to the choice of parent photodecomposing particles.     

Multicharged ion source based on Penning-type discharge with electron cyclotron resonance heating by millimeter waves

We suggest a Penning-type discharge as a trigger discharge for fast development of pulsed electron cyclotron resonance plasma. The Penning-type discharge glows at a low pressure as needed. Gyrotron radiation (75 GHz, 200 kW, 1 ms) was used for plasma heating. Fully striped helium ions were demonstrated, average charge of ions in the plasma was ≈ 2. Experiment and calculations show that high charge states of heavier gases require lower initial pressure and longer development time. Only moderate charge states are achievable in this pulsed scheme.     

Novel plasma immersion ion implantation and deposition hardware and technique based on high power pulsed magnetron discharge

A novel plasma immersion ion implantation technique based on high power pulsed magnetron sputtering (HPPMS) discharge that can produce a high density metal plasma is described. The metal plasma is clean and does not suffer from contamination from macroparticles, and the process can be readily scaled up for industrial production. The hardware, working principle, and operation modes are described. A matching circuit is developed to modulate the high-voltage and HPPMS pulses to enable operation under different modes such as simultaneous implantation and deposition, pure implantation, and selective implantation. To demonstrate the efficacy of the system and technique, CrN films with a smooth and dense surface without macroparticles were produced. An excellent adhesion with a critical load of 59.9 N is achieved for the pure implantation mode.     

A synchronized emissive probe for time-resolved plasma potential measurements of pulsed discharges

A pulsed emissive probe technique is presented for measuring the plasma potential of pulsed plasma discharges. The technique provides time-resolved data and features minimal disturbance of the plasma achieved by alternating probe heating with the generation of plasma. Time resolution of about 20 ns is demonstrated for high power impulse magnetron sputtering (HIPIMS) plasma of niobium in argon. Spatial resolution of about 1 mm is achieved by using a miniature tungsten filament mounted on a precision translational stage. Repeated measurements for the same discharge conditions show that the standard deviation of the measurements is about 1-2 V, corresponding to 4%-8% of the maximum plasma potential relative to ground. The principle is demonstrated for measurements at a distance of 30 mm from the target, for different radial positions, at an argon pressure of 0.3 Pa, a cathode voltage of -420 V, and a discharge current of about 60 A in the steady-state phase of the HIPIMS pulse.     

Radio frequency discharge with control of plasma potential distribution

A RF discharge plasma generator with additional electrodes for independent control of plasma potential distribution is proposed. With positive biasing of this ring electrode relative end flanges and longitudinal magnetic field a confinement of fast electrons in the discharge will be improved for reliable triggering of pulsed RF discharge at low gas density and rate of ion generation will be enhanced. In the proposed discharge combination, the electron energy is enhanced by RF field and the fast electron confinement is improved by enhanced positive plasma potential which improves the efficiency of plasma generation significantly. This combination creates a synergetic effect with a significantly improving the plasma generation performance at low gas density. The discharge parameters can be optimized for enhance plasma generation with acceptable electrode sputtering.     

瞬短脉冲辉光放电飞行时间质谱仪

本文介绍了本实验室研制的瞬短脉冲辉光放电飞行时间质谱仪。其中，辉光放电离子源具有离子产额高、工作稳定可靠等特点，可用于对金属（合金）样品的直接分析。该仪器为国内首台自制的常压（低真空）等离子体飞行时间质谱仪，亦为国际上首台瞬短脉冲辉光放电质谱仪，为研究瞬短脉冲辉光放电及其应用这一新兴领域打下了基础，仪器的分辨本领优于５００。     

Direct-current cathodic vacuum arc system with magnetic-field mechanism for plasma stabilization

Filtered cathodic vacuum arc (FCVA) deposition is characterized by plasma beam directionality, plasma energy adjustment via substrate biasing, macroparticle filtering, and independent substrate temperature control. Between the two modes of FCVA deposition, namely, direct current (dc) and pulsed arc, the dc mode yields higher deposition rates than the pulsed mode. However, maintaining the dc arc discharge is challenging because of its inherent plasma instabilities. A system generating a special configuration of magnetic field that stabilizes the dc arc discharge during film deposition is presented. This magnetic field is also part of the out-of-plane magnetic filter used to focus the plasma beam and prevent macroparticle film contamination. The efficiency of the plasma-stabilizing magnetic-field mechanism is demonstrated by the deposition of amorphous carbon (a-C) films exhibiting significantly high hardness and tetrahedral carbon hybridization (sp3) contents higher than 70%. Such high-quality films cannot be produced by dc arc deposition without the plasma-stabilizing mechanism presented in this study.     

Fast ion beam-plasma interaction system

A device has been constructed for the study of the interaction between a fast ion beam and a target plasma of separately controllable parameters. The beam of either hydrogen or helium ions has an energy of 1-4 keV and a total current of 0.5-2 A. The beam energy and beam current can be varied separately. The ion source plasma is created by a pulsed (0.2-10-ms pulse length) discharge in neutral gas at up to 3 x 10(-3) Torr. The neutrals are pulsed into the source chamber, allowing the neutral pressure in the target region to remain less than 5 x 10(-5) Torr at a 2-Hz repetition rate. The creation of the source plasma can be described by a simple set of equations which predict optimum source design parameters. The target plasma is also produced by a pulsed discharge. Between the target and source chambers the beam is neutralized by electrons drawn from a set of hot filaments. Currently under study is an unstable wave in a field-free plasma excited when the beam velocity is nearly equal to the target electron thermal velocity (v(beam) approximately 3.5 x 10(7) cm/s, Te = 0.5 eV).