密封铅蓄电池阻抗参数与荷电态

蓄电池的交流阻抗特性远比理想的单电极要复杂，不同类型的蓄电池的阻抗参数差别很大，其中有些参数有可能用于指示蓄电池的荷电态。密封铅蓄电池的荷电态在50%以上时，电池内阻几乎没有变化，但其电化学反应内阻与双层电容之积，却对荷电态很敏感。     

蓄电池内阻与容量的关系

蓄电池的内阻跟额定容量有关。荷电态SOC高于50%时,阀控密封铅酸蓄电池、锂离子电池、金属氢化物镍电池、镉镍蓄电池、锌镍电池的内阻都是保持不变的;只是SOC低于40%以下时,它们的内阻才很快升高。     

阀控密封铅蓄电池的开路电压变化规律

起动型铅蓄电池的开路电压跟荷电态之间存在线性关系,因而可以根据开路电压来推断电池的放电容量或荷电态。阀控密封铅蓄电池的开路电压跟电极表面附近液层中的电解液的密度有关,但它的放电容量不仅跟电池中参与电极反应的电解液的量以及活性物质的量有关,而且还深受反应粒子的扩散过程迟缓性的影响。因而不能直接用开路电压来推断阀控密封铅蓄电池的放电容量或荷电态。     

阀控密封铅蓄电池在线检测技术评述

1电池组在线检测的必要性和迫切性目前在通信电源系统中阀控密封铅蓄电池(包括AGM式密封铅蓄电池和胶体密封铅蓄电池)已基本上取代了自由电解液式的固定型铅酸蓄电池。为了确保通信电源的可靠性,必须及时了解电源系统中的蓄电池组的荷电态SOC(State-of-Charge)和健康状态SOH(State-of-Health),即评估蓄电池组的放电容量和使用寿命。虽然通过深放电检查蓄电池容量是评价蓄电池性能和健康状态的最有效的办法,然而对于在线使用的蓄电池组,这样做风险很大,若无备用蓄电池组,一般不允许使用这种方法。过去人们由在线检测电解液密度就可以判…     

装甲车辆铅酸蓄电池容量在线检测的研究

针对装甲车辆铅酸蓄电池特殊变电流工况,文中在对开路电压法和内阻法深入分析的基础上提出了一种新的荷电状态辨识方法,并对其进行了硬件电路设计。该辨识方法适合装甲车辆复杂的变电流工况,可实现电池荷电状态与性能状态的在线准确评估,实现蓄电池高效管理。     

梯次利用动力锂电池内部参数特性分析

为了研究退役锂电池内阻特性与荷电状态(State of Charge,SOC)的关系,以电动汽车淘汰实现梯次利用的18650动力锂电池为研究对象,对其进行不同温度(-20～20℃)、不同倍率(1C,2C)充放电测试,利用改进的电池模型测量电池的内阻,获得了退役锂电池内阻特性与环境温度、放电倍率及荷电状态之间的关系。研究结果表明,退役锂电池在充电实验中,温度变化、放电倍率对其内阻影响不明显;放电实验中,相同放电倍率下,退役锂电池内阻随着电池SOC的减小而减小;同一SOC值下,随着温度的上升,退役锂电池内阻逐渐变大,放电倍率越大,退役锂电池内阻越小。因此,退役锂电池内阻与环境温度、放电倍率、荷电状态互相影响,为退役锂电池分类梯次利用提供了参考。     

Cd-Ni电池组并联充电的研究

电池组的失效通常是由组内个别电池性能下降引起的,并与充电方法有较密切的关系.用恒流并联充电法对CA-Ni电池组充电并对充放电过程进行研究,结果表明:并联充电过程中各支路电池的充电电流是按电池的荷电态来分配的,荷电态高的电池分配的电流小,荷电态低的电池分配的电流大,随着充电的进行,各支路电流的差值经过一定的波动逐渐减小,最终电流趋于一致,完成充电过程.并联充电使各支路电池充电结束时电池的荷电态差值减小,提高了电池的均匀性,延长了电池组的循环寿命.     

离子注入机注入离子能量分布的计算机模拟

本文参考ＴＲＩＭ程序，建立用于模拟计算多种荷电态离子注入过程的程序。在此基础上，对注入离子荷电态进行拟合。本文的结论对注入离子束能量分析有应用价值。     

手机电池常见故障及原因分析

M③B③待机时间、连续通话时间短,寿命短单体电池未经分选,容量低,或单体电池本身为次品或废口D口电池充满后,使用很短时间就显示电池电压低,但还能继续打一段时间电话电池放电电压平台时间短通话质量差,经常断电手机电池未经成品检测工序,电池内部有虚接现象,或过流保护器有问颜电地充满后,未经使用,放置几天就没电了电池内部微短路,荷电保持能力差电池充电时发热,很快就显示充满电,但使用时很快就没电了电池内阻大电池在原装充电器上不能充电,在国产充电器上充电正常热敏电阻选择或安装不合适,或手机电池未加专用电路电池烧毁手机电池中…     

电动汽车锂离子电池模型参数辨识和荷电状态估算

针对电动汽车锂离子电池荷电状态在线估算准确率低、实时性差等问题,文中建立一种精确在线估算荷电状态的有效方法,采用MAFF-RLS和EKF对荷电状态进行估算。建立锂离子电池的等效电路模型,将MAFF-RLS应用在电池等效电路模型的参数辨识上,可以有效在线辨识模型参数。在模型参数辨识的基础上,将辨识出的模型参数作为荷电状态估算的输入,采用EKF估算动力电池实时荷电状态。经过实验仿真发现,采用MAFF-RLS和EKF联合估算荷电状态能够提高估算精确度,估算误差仅在2%以内。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.