温度系数可调的基准电压产生电路研究与设计

由于TFT-LCD显示屏的物理特性随温度而发生变化,驱动电路必须提供具有相同温度特性的驱动电压,以补偿显示屏的温度特性,进而提高显示画质。文章研究并设计了一种用于TFT-LCD彩屏手机驱动芯片的基准电压产生电路,其输出电压的绝对值与温度系数可编程调节,从而可实现与液晶显示屏的温度特性相匹配。介绍了该电路的各子模块电路,包括偏置电路、带隙基准电路和输出电压调节电路,详细分析了带隙基准电路所产生的基准电压的温度系数及其调节原理。用Hspice对采用0.25μmCMOS工艺设计的电路进行了仿真。仿真结果表明,基准电压的温度系数可从-1.24~1.13mV/℃变化,输出电压的绝对值可从1.8~2.1V调节,最大可提供负载电流40mA。     

TFT-LCD驱动芯片内置电源电路IP核设计

为了进一步提高TFT-LCD驱动芯片内置电源电路设计的合理性,为薄膜晶体管液晶显示器提供更加优质的电路服务,文章通过对TFT-LCD电源电路模块的功能和结构进行分析,在结合其驱动电压要求的基础上,对其内置电源电路IP核展开了详细的设计和分析。研究结果表明,文章所设计的TFT-LCD驱动芯片内置电源电路的IP核,具有显示时间快和工作稳定等特点,能够较好地对内置电源电路进行驱动。     

手机用TFT-LCD Source Driver电路模块研究与设计

SourceDriver电路模块是彩色TFT-LCD驱动控制芯片的关键电路之一,其功能是将数字图像显示数据转换成模拟驱动电压,从而驱动TFT-LCD显示各种彩色图像。本文从TFT-LCD的驱动原理出发,提出了一种适合于手机用TFT-LCD的低功耗、小面积的SourceDriver电路体系结构,用0.25μmCMOS工艺设计并实现了显示26万(26×26×26)色,支持132RGB×176分辨率的手机用TFT-LCD驱动控制芯片中的SourceDriver电路,电路面积约15mm×0.6mm。Hspice仿真结果表明,SourceDriver电路的响应时间为1.49μs,静态功耗小于1mW。     

TFT-LCD驱动芯片内置电源电路IP核设计

设计了一种采用0.25μm CMOS低压/中压/高压混合电压工艺的TFT-LCD驱动芯片内置电源电路IP核.该IP模块包括低压降线性稳压电路、电荷泵升压/反压电路、VCOM驱动电路和VGOFF驱动电路等,能够提供驱动芯片的系统工作电压和TFT-LCD的驱动电压.所产生的电压值可实现编程控制,具有启动时间快、工作稳定和较低的温度系数等特点.仿真与测试结果表明,在上电200ms后能够生成稳定、正确的输出电压.电源电路模块的总静态功耗小于2mW.     

TFT-LCD驱动芯片内置电源电路IP核设计

设计了一种采用0.25μm CMOS低压/中压/高压混合电压工艺的TFT-LCD驱动芯片内置电源电路IP核.该IP模块包括低压降线性稳压电路、电荷泵升压/反压电路、VCOM驱动电路和VGOFF驱动电路等,能够提供驱动芯片的系统工作电压和TFT-LCD的驱动电压.所产生的电压值可实现编程控制,具有启动时间快、工作稳定和较低的温度系数等特点.仿真与测试结果表明,在上电200ms后能够生成稳定、正确的输出电压.电源电路模块的总静态功耗小于2mW.     

中小屏幕TFT-LCD驱动芯片的输出缓冲电路

在分析中小屏幕TFT-LCD驱动芯片的负荷特性的基础上,提出了一种新型的驱动电压输出缓冲电路结构.通过负反馈动态控制输出级的工作状态,具有交替提供拉电流和灌电流的驱动能力,可有效抑制输出电压的波动.与传统的两级运算放大器电路相比,该电路结构简单,稳定性能好,降低了静态功耗并节省了芯片面积.采用0.25μm CMOS工艺设计并实现了两种不同输出电压的缓冲电路.HSPICE仿真结果表明,输出电压缓冲电路的静态电流为3μA,Offset电压小于±2mV.同时,当TFT-LCD的驱动电压在-8～ 16V之间切换时,输出电压的波动范围小于±0.4V,输出电压的恢复时间小于7μs.经对工程样片的测试知,其性能完全满足中小屏幕TFT-LCD驱动控制芯片的要求.     

温度系数连续可调的带隙基准源电路设计

为了对薄膜晶体管液晶显示器(TFT-LCD)驱动芯片的驱动电压进行温度补偿以改善TFT-LCD的性能,本文基于标准CMOS(3.3V)的chrt35rf 0.35$m工艺,设计了一款温度系数可连续调节的带隙基准电压源,其中包括核心电路、运算放大器电路和启动电路3个子模块。该电路使用MOS晶体管作为可变电阻,通过调节MOS栅极电压控制MOS漏源等效电阻的连续可变,进而改变电路中的电阻比值,实现带隙基准源的温度系数连续可调。使用Cadence的Spectre仿真器进行仿真,结果表明,在-25~125℃的工作温度范围内,带隙基准源电路的输出电压的正温度系数可连续调节范围为156.6~2 545.0ppm/℃,输出电压的负温度系数的连续变化范围为156.6~1 337.7ppm/℃,输出基准电压变化为0.95~2.67V,低频时基准电压的电源抑制比达到73.13dB。该电路实现了基准电压从负温度系数向正温度系数的连续可调节,且调节范围较大。     

中小屏幕TFT-LCD驱动芯片的输出缓冲电路

在分析中小屏幕TFT-LCD驱动芯片的负荷特性的基础上,提出了一种新型的驱动电压输出缓冲电路结构.通过负反馈动态控制输出级的工作状态,具有交替提供拉电流和灌电流的驱动能力,可有效抑制输出电压的波动.与传统的两级运算放大器电路相比,该电路结构简单,稳定性能好,降低了静态功耗并节省了芯片面积.采用0.25μm CMOS工艺设计并实现了两种不同输出电压的缓冲电路.HSPICE仿真结果表明,输出电压缓冲电路的静态电流为3μA,Offset电压小于±2mV.同时,当TFT-LCD的驱动电压在-8～+16V之间切换时,输出电压的波动范围小于±0.4V,输出电压的恢复时间小于7μs.经对工程样片的测试知,其性能完全满足中小屏幕TFT-LCD驱动控制芯片的要求.     

单片集成TFT-LCD手机驱动芯片内置稳压器的设计

研究并设计了一种用于单片集成TFT-LCD手机驱动芯片的稳压器电路,该电路产生恒定的直流电压(1.8 V)给芯片内的逻辑控制电路和GRAM提供工作电源.在详细分析带隙基准电路和LDO电路的基础上,提出了一种负载调整率低、稳定性能好、温度系数小以及低功耗的稳压器电路解决方案.通过对采用0.18靘 CMOS中压工艺设计的电路进行Hspice仿真表明,负载调整率为1.1％,负载电流突变时的稳定时间小于5靤,温度系数6.5 ppm/℃,静态功耗小于0.04 mW,均满足设计要求.     

手机用TFT-LCD驱动控制芯片电源模块设计

电源模块是TFT-LCD驱动控制芯片内置模拟电路的一个重要组成部分,其性能直接影响着芯片的功耗以及彩屏手机的显示画质。文章从TFT-LCD的驱动原理出发,提出了一种低功耗、易调节的电源模块设计思想,所产生的电压值可实现编程控制。用Hspice对采用0.25μmCMOS工艺设计的电路进行仿真表明,系统在启动200ms后能够生成稳定、正确的驱动电源电压,其静态功耗小于2mW。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first