ZrO2—Y2O3陶瓷显微组织结构的电镜观察

本文采用扫描电镜和透射电镜对不同烧结工艺和不同热处理制度的ZrO_2-2mol％Y_2O_3及ZrO_2-6mol％Y_2O_3陶瓷的显微组织、晶体结构进行了观察和分析。结果表明:ZrO_2-2mol％Y_2O_3试样出1300,1350,1400,1450℃烧结后,其组织为单一的四方相,而经1500,1600℃烧结后为四方和单斜混合相。此时,单斜相内几乎全是孪晶,而四方相内则存在着位错。ZrO_2-6mol％Y_2O_3试样经1600℃烧结后,再于1300,1400,1500℃时效,其组织为立方相基体上分布着沿特定方向共格析出的透镜片状四方相粒子。     

等离子喷涂ZrO28Y2O3涂层厚度测量方法研究

提出了利用激光非接触点扫描测量涂层厚度的方法.研究了激光照射新型材料ZrO28Y2O3涂层粗糙表面上光点的高斯分布,并利用扫描电子显微镜得到了涂层粗糙表面的显微精细结构.采用激光-面阵CCD传感器-计算机数字图像处理技术测量涂层厚度.实验结果表明:所提出的测量方法是可行的,测量涂层厚度的重复性误差在±5 μm范围内.     

Yb∶Y2O3激光陶瓷纳米粉体制备及性能研究

以Y2O3和Yb2O3为原料,采用柠檬酸溶胶-凝胶法,控制溶液pH值为3～4,反应温度70～80 ℃时制备出Yb∶Y2O3激光陶瓷纳米前驱粉体。XRD测试结果表明最佳煅烧温度为800 ℃,并且晶化完全;差热-热重分析表明,前驱体中柠檬酸和硝酸等在300 ℃时分解放热。荧光光谱分析发现,荧光发射的最强峰位于1030 nm,对应Yb3+的2F7/2-2F5/2能级跃迁。     

Yb:Y2O3激光陶瓷纳米粉体制备及性能研究

以Y2O3和Yb2O3为原料,采用柠檬酸溶胶-凝胶法,控制溶液pH值为3～4,反应温度70～80 ℃时制备出Yb∶ Y2O3激光陶瓷纳米前驱粉体.XRD测试结果表明最佳煅烧温度为800 ℃,并且晶化完全;差热-热重分析表明,前驱体中柠檬酸和硝酸等在300 ℃时分解放热.荧光光谱分析发现,荧光发射的最强峰位于1030 nm,对应Yb3+的2F7/2-2F5/2能级跃迁.     

ZrO2—MgO—Y2O3固态电解质的电性能

为降低烧结温度、改进烧结体的电性能,进行了ZrO_2与不同成分的Y_2O_3和MgO两种稳定剂的掺杂研究,结果表明添加MgO后使Y_2O_3-ZrO_2系的致密性加强了。若添加适当,烧结体将呈晶粒双峰分布。本研究发现(YO_(1.5))_(0.08)(MgO)_(0.04)(ZrO_2)_(0.88)的组合,它具有良好的导电性和可靠的对氧的灵敏度。由于对氧的灵敏度,其对数特性电动势在440℃和550℃时产生。此外,氧气压很低时,电动势降低,这是电子传导和电极极化的结果。     

电子束共蒸发Al2O3-La2O3和ZrO2-Ta2O5复合薄膜的介电性能研究

Al2O3、ZrO2、Ta2O5和La2O3薄膜在栅介质、无机EL介质和光学薄膜方面有着重要用途,但对其复合薄膜介电性能方面的研究很少。文章采用电子束共蒸发法制备了厚度分别为414nm和143nm的Al2O3-La2O3（ALO）和ZrO2-Ta2O5（ZTO）复合薄膜,用Sawyer—Tower电路测得介电常数分别为17和34,反映介电损耗的参数△Vy分别为0．013V和0．56V,击穿场强分别为128MV／m和175MV／m,在50MV／m场强下,ALO的正、反向漏电流密度分别为3．1×10-5／cm2和4．1×10-5A／cm2,ZTO的正、反向漏电流密度分别为3．9×10-5／cm2和3．7×10-5A／cm2。另外,实验还与电子束蒸发和反应溅射制备的Al2O3、ZrO2、Ta2O5的介电性能做了比较,结果表明,上述复合薄膜单独作为无机EL绝缘层是不合适的。     

ZrO2掺杂对Ba(Zn1/3Ta2/3)O3陶瓷介电性能的影响

采用固相反应烧结法制备了ZrO2掺杂的Ba(Zn1/3Ta2/3)O3微波介质陶瓷,研究了陶瓷的烧结特性和介电性能。结果表明,ZrO2掺杂能有效降低Ba(Zn1/3Ta2/3)O3陶瓷的烧结温度,改善陶瓷的微波介电性能。当x(ZrO2)=4%时,Ba(Zn1/3Ta2/3)O3陶瓷致密化烧结温度由纯相时的1 600℃降至1 300℃,同时陶瓷材料的微波介电性能达到最佳值,即介电常数εr=34.79,品质因数与频率的乘积Q×f=148 000(8GHz),谐振频率温度系数τf=0.3×10-6/℃。     

Al2O3陶瓷和Al2O3微粉

叙述了氧化铝瓷的重要性和氧化铝微粉的组成、性能和应用，指出了陶瓷质量和一次晶粒的关系。     

氧化钇掺杂NBBT压电陶瓷的介电特性

研究了Y2O3掺杂对(Na0.5Bi0.5)0.94Ba0.06TiO3(NBBT)陶瓷晶体结构、介电性能与介电弛豫行为的影响。XRD分析表明,x(Y2O3)掺杂在0～0.7%范围内陶瓷均能够形成纯钙钛矿固溶体。修正的居里-外斯公式较好地描述了陶瓷弥散相变特征,弥散指数随Y2O3掺杂量的增加先下降后增加。Y2O3掺杂量低于0.3%的陶瓷仅在低温介电反常峰tf附近表现出明显的频率依赖性,Y2O3掺杂量高于0.5%的陶瓷材料在室温和tf之间都表现出明显的频率依赖性。根据宏畴-微畴转变理论探讨了该体系陶瓷介电弛豫特性的机理。     

Y2O3作助烧剂的Al2O3/SiCp陶瓷断裂行为的SEM研究

纳米复相陶瓷被认为是二十世纪最有发展前途的陶瓷材料之一。在陶瓷基体中弥散亚微米级的第二相颗粒,可使材料的机械性能大幅提高。显微观察发现了区别于微米级复合陶瓷的“内晶型”粒子的存在,这意味着纳米复合陶瓷性能的改善与其特殊的微观结构是密切相关的。其中Al2O3/SiCp是研究最多的系统,但由于弥散相SiC为共价键,很难烧结,因而Al2O3/SiCp纳米复相陶瓷一般用热压烧结[1—5]。但由于热压烧结成本昂贵,制品形状简单,极大地限制了其实用性。本文利用非均匀成核法,将Y(OH)3包覆到纳米SiC的粒子表面制备出Al2O3-SiC复合粉,等静压成…     

Electrical behavior of ZrO2-MgO-Y2O3 solid electrolyte

ZrO₂ doped with various compositions of two stabilizers, Y₂O₃ and MgO, in order to lower sintering temperature and improve the electrical behavior of sintered bodies have been investigated in this study. The results show that densification of Y₂O₃-ZrO₂ system is enhanced by MgO addition. Sintered bodies display a bimodal distribution of grains under proper addition. This research discovers that (YO_1.5)_0.08(MgO)_0.04(ZrO₂)_0.88 system has high conductivity and responsible oxygen sensitivity. With regard to oxygen sensitivity, the log behavior EMF takes place at 440 and 550° C. Besides, the EMF decreases at a very low oxygen pressure caused by electronic conduction and electrode polarization.     

High-Permittivity-Insulator EEPROM Cell Using Al2O3 or ZrO2

A theoretical investigation is carried out into memory cells based on a polysilicon–oxide–nitride–oxide–silicon structure in which a high-permittivity dielectric is used instead of SiO₂ as the gate insulator. The dielectric is taken to be Al₂O₃ or ZrO₂. Write/erase (W/E) cycles are simulated numerically. It is shown for the first time that changing to a high-permittivity insulator reduces the unwanted carrier injection from the gate region and allows one to employ lower and/or shorter W/E pulses; specifically, the W/E time can be decreased from 1 ms to 10 s. It is concluded that high-permittivity insulators might be useful in carrier-trapping EEPROMs and RAMs.     

Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack

A metal oxide semiconductor field effect transistor (MOSFET) with ultra-thin La₂O₃/Y₂O₃ high-k gate dielectric was fabricated. The effects of thermal treatment process on both physical and electrical characteristics of the La₂O₃/Y₂O₃ stack were studied using XPS and electrical measurements. It was observed that the effective mobility of the fabricated MOSFETs with La₂O₃/Y₂O₃ gate stack was not degraded with increasing the annealing temperatures up to 600 °C. X-ray photoelectron spectroscopy (XPS) analysis also revealed that the formation of SiO₂ and silicate layer at the interface was suppressed in La₂O₃/Y₂O₃ stack compare to that of in La₂O₃ single layer. Obtained results suggesting that La₂O₃/Y₂O₃ gate stack is one of the promising candidates for high-k gate insulator to be used in the future metal oxide field effect transistors.     

Pb/Bi复掺对Y2O3-2TiO2微波介质陶瓷性能的影响

研究了PbTiO3和Bi2Ti2O7复合掺杂对新型的具有中介电常数的Y2O3-2TiO2系微波介质陶瓷物相组成、介电性能和烧结温度的影响。结果表明,掺杂后的陶瓷材料主晶相仍为A2B2O7型烧绿石结构,未发现第二相,Bi3+和Pb2+共同占据Y3+所在的A位。Pb/Bi复合掺杂有效降低了陶瓷的烧结温度,当w(PbTiO3)=2%和w(Bi2Ti2O7)=8%时,烧结温度降低为1 260℃,且陶瓷具有较好的介电性能,即介电常数rε≈64,介质损耗tanδ≈3.6×10-3,品质因数与频率的乘积Q×f≈2 438 GHz。     

Na掺杂Bi_2O_3-ZnO-Nb_2O_5基陶瓷的性能

采用固相反应法制备了(Bi2–xNax)(Zn1/3Nb2/3)O7陶瓷,研究了Na+替代Bi3+对Bi2(Zn1/3Nb2/3)2O7基陶瓷烧结性能、显微结构和介电性能的影响。替代后样品的烧结温度从960℃降至约880℃;当替代量x≤0.20时,相结构保持单一的单斜焦绿石相,随替代量进一步增加出现立方相;温度为–30～+130℃,替代后样品出现明显的介电弛豫现象,弛豫过程中的激活能约为0.40eV。用缺陷偶极子和晶格畸变对Na掺杂Bi2(Zn1/3Nb2/3)2O7基陶瓷的介电弛豫现象作出简要解释。     

Lasing in spherically shaped Y2O3-ZnO nanocomposites

The luminescence properties of spherically shaped Y₂O₃-ZnO nanocomposites with average diameters of 132 and 179 nm are studied. The nanocomposites are produced by synthesis from a solution, and their size dispersion is about 15%. Narrow peaks of lasing upon exciton radiative recombination in zinc oxide are observed in the ultraviolet spectral region. It is shown that, for small cavities (100?C200 nm in diameter), individual nanospheres of the composite exhibit only one laser mode. The initiation of stimulated luminescence with a peak at 376 nm corresponding to the bound photon mode of nanocavities 179 nm in diameter is observed as the optical pumping power is increased to >130 kW cm^?2.     

Pr和V掺杂的Bi4Ti3O12铁电陶瓷的微结构及电性能

采用传统固相烧结法制备了Pr6O11和V2O5共同掺杂的Bi4Ti3O12铁电陶瓷。XRD分析表明,Pr6O11和少量V2O5的掺杂没有引起材料结构的改变。适当比例Pr6O11的掺杂会使材料的铁电性能有明显的改善,但其电输运特性明显不同于3价稀土离子的掺杂。实验表明,钒掺杂对材料铁电性能的影响主要体现在低电场下,不能简单地以氧空位的变化来解释。配比为Bi3.08Pr0.75Ti2.98V0.02O12的样品的电学性能稳定并且具有较大的剩余极化。