硅基光子材料和器件的进展

评述硅基光子材料和器件的进展,包括硅二极管的受激发射、具有量子结构的RCE(谐振腔增进型)光电二极管、MOS高频光调制器、SOI光开关阵列和可调谐波长滤波器,重点介绍低插入损耗、快响应的SOI基热光波导开关阵列的最新结果.以SOI为基片,成功地研制出带有全内反射(TIR)镜的重排无阻塞型光开关阵列,并首次研制出16×16阻塞型光开关阵列.在1.55μm波段,插入损耗和偏振相关性随着器件长度的增加而略微增大.如果器件的末端镀上抗反射膜,插入损耗会降低2～3dB,这些器件的上升和下降时间分别为2.1和2.3μs.     

基于双面反射镜的N×N光开关的特性分析和实验研究

报道了基于双面反射镜的N×N光开关器件。介绍了使用双面反射镜的2×2,4×4光开关的集成光路设计和工作原理;采用Benes网络,以2×2和4×4光开关为基本单元的N×N光开关器件的整体结构,并根据“一笔画”原理,分析了4×4,8×8和16×16光开关矩阵的可重排无阻塞特性和光开关矩阵的光路选择算法。最后,基于2×2,4×4光开关技术制备了16×16光开关矩阵。测试表明,该器件具有良好的插入损耗、回波损耗、串扰和开关时间等性能,从而验证了设计思想和工艺的可行性。在基于双面反射镜的光开关矩阵中,双面反射镜的使用大大减少了光开关矩阵中运动镜片的数量,简化了控制程序,并有利于提升光开关器件的可靠性能,有望在中小型光交换机、网络管理和光路测量中获得应用。     

Novel mode scrambler for reducing mode dependence in multimode optical waveguides

A novel mode scrambler for multimode optical waveguides is proposed to stabilise branching characteristics against the mode excitation conditio. A 2 × 2 optical star coupler is fabricated using this mode scrambler, and a stable branching ratio is realised with an excess insertion loss of 2.7 dB.     

硅基波导光开关及开关阵列的研究进展

光开关是光网络中实现光交换的核心器件.硅基波导光开关作为一类重要的开关器件,具有体积小、开关速度快、兼容性好等优点.近年来随着硅基波导制作技术的成熟,硅基波导光开关及开关阵列的研究日益受到人们的重视.文章介绍了SOI(silicon-on-insulater)光波导、聚合物光波导和SiO2光波导等三类常见的硅基波导在光开关及开关阵列方面的一些研究进展.     

Asymmetric X-junction thermooptic switches based on fluorinatedpolymer waveguides

Thermooptic 2×2 switches based on low-loss fluorinated polymer waveguides have been demonstrated. For the waveguide possessing a low-loss around the 1.55-μm wavelength, crosslinkable fluorinated poly(arylene ethers) (FPAE) is developed as a core material and perfluorocyclobutane (PFCB) is used as a cladding material. To enhance the fabrication tolerance and to achieve a low switching power, asymmetric X-junctions with a Mach-Zehnder interferometer are exploited for the polymeric waveguide switches. An inverted rib waveguide structure is fabricated by filling up the etched groove on a lower cladding with the core polymer. The switch exhibits a crosstalk of less than -20 dB, a switching power of 10 mW, and an insertion loss of 4.5 dB     

A rearrangeable multichannel free-space optical switch based onmultistage network configuration

A rearrangeable 128×128-channel optical switch based on a multistage network configuration is demonstrated. The properties of optical components required for achieving up to 1000×1000-channel switches are discussed, taking into account the diffraction limit and liquid crystal light modulator (LCLM) crosstalk. An examination of the insertion loss and crosstalk properties of the switch reveals an average loss and crosstalk of 7.9 and -21.2 dB, respectively, and worst-case loss and crosstalk of 11.0 and -12.8 dB, respectively. Such low-loss and low-crosstalk properties indicate that the proposed switch structure is suitable for a large-scale rearrangeable switch     

1550nm低推挽电压聚合物定向耦合电光开关的设计

应用保角变换法、镜像法、耦合模理论和电光调制理论设计了一种推挽电极聚合物脊形波导定向耦合电光开关,阐述了基本结构和工作原理,给出了器件的设计和优化过程,主要分析了耦合长度、开关电压、输出光功率、插入损耗、串扰等特性.为了实现正常的开关功能,讨论了制作公差、波谱漂移以及单模光纤耦合损耗对器件性能的影响.模拟结果表明,所设计的开关的耦合长度为3082μm,开关电压为2.14V;插入损耗小于1.14dB,串扰小于-30dB.与BPM仿真结果以及实验结果的对比表明,文中提出的波导和电极的理论分析与计算方法具有较高的精度和可行性.     

An ultra-compact cross/bar optical routing switch using two polymer electro-optic microrings

A 2×2 cross/bar polymer electro-optic(EO) routing switch is proposed,which is composed of two passive channel waveguides and two active EO polymer microrings with bending radius of only 13.76 μm.Detailed structure,theory and formulation are provided to characterize the output power of the switch.For obtaining fundamental mode propagation,small bending loss and phase-matching between channel waveguide and microring resonator(MRR) waveguide,the structural parameters are optimized under the wavelength of 1550 nm.Analyses and simulations on output power and output spectra indicate that a switching voltage of 5 V is desired to realize the exchange between cross state and bar state,the crosstalk under cross state and that under bar state are about 28.8 dB and 39.9 dB,respectively,and the insertion losses under these two states are about 2.42 dB and 0.13 dB,respectively.Compared with our four EO switches reported before,this device possesses ultra-compact size of 0.233 mm×0.233 mm as well as low crosstalk and insertion loss,and therefore it can serve as a good candidate for constructing large-scale optical routers or switching arrays in photonic network-on-chip(NoC).     

Architecture of crosstalk-reduced digital optical 2×2 switch(CRDOS)

Coherent crosstalk of optical space switch matrices is a key problem of optical transparent networks. An analysis of the crosstalk sources of electrooptical digital switches (DOS) is given and a new crosstalk compensating technique based on the integration of a general mode converter as correcting device into a 3×2 DOS is proposed and theoretically investigated. It can be shown, that a -20 dB crosstalk 2×2 DOS device can be enhanced to -40 dB. This architecture leads to an increase of the device length by only a few percent. It opens up the possibility to realize short optical switches for larger matrices     

Performance and modeling of advanced Ti:LiNbO3 digitaloptical switches

High-performance Y-branch digital optical switches realized in Ti:LiNbO₃ are presented. Their switching response functions have been optimized in terms of switch voltage and crosstalk ratio. The optimization is based on analyzing different types of waveguide shaping and switching arrangements using coupled mode theory and computer simulations. Excellent switching characteristics are achieved with devices exploiting a specially shaped waveguide branch in a dilated switch arrangement. Demonstrated performances include switching voltage as low as 9 V with crosstalk suppression better than 45 dB and fiber-to-fiber losses as low as 4 dB. Polarization independence with crosstalk suppression better than 40 dB over a 1520- to 1570-nm wavelength range is achieved for any applied switch voltage greater than 18 V. These optimized digital optical switches have further demonstrated the capability to reshape electrical input signals at switching rates of several hundred megahertz     

Silica-based integrated optic Mach-Zehnder multi/demultiplexerfamily with channel spacing of 0.01-250 nm

A Mach-Zehnder (MZ) interferometer design is presented for application to wavelength-division multiplexed/frequency division multiplexed (WDM/FDM) systems. A variety of integrated-optic devices with low loss and low crosstalk, using silica-based waveguides, are demonstrated. MZ interferometers operate as multi/demultiplexers or frequency-selection switches. The channel spacing is determined by the waveguide arm length difference, and a spacing range of 1 GHz to 36 THz, corresponding to a wavelength spacing of 0.008-250 nm, is achieved. The devices for the WDM region have low fiber-to-fiber loss of 0.5 dB, and the devices for the FDM region have higher losses of 2-5 dB. Crosstalk of less than -15 dB was obtained for all the devices. A 5-GHz-spaced 16-channel frequency selection switch and a 10-GHz-spaced eight-channel multi/demultiplexer were also fabricated with a total loss of 5 dB and total crosstalk of -10 dB or less     

$Ka$-Band Low-Loss and High-Isolation Switch Design in 0.13-$mu{hbox {m}}$ CMOS

This paper presents designs and measurements of Ka-band single-pole single-throw (SPST) and single-pole double-throw (SPDT) 0.13-CMOS switches. Designs based on series and shunt switches on low and high substrate resistance networks are presented. It is found that the shunt switch and the series switch with a high substrate resistance network have a lower insertion loss than a standard designs. The shunt SPST switch shows an insertion loss of 1.0 dB and an isolation of 26 dB at >35 GHz. The series SPDT switch with a high substrate resistance network shows excellent performance with 2.2-dB insertion loss and isolation at 35 GHz, and this is achieved using two parallel resonant networks. The series-shunt SPDT switch using deep n-well nMOS transistors for a high substrate resistance network results in an insertion loss and isolation of 2.6 and 27 dB, respectively, at 35 GHz. For series switches, the input 1-dB compression point (1P₁) can be significantly increased to with the use of a high substrate resistance design. In contrast, of shunt switches is limited by the self-biasing effect to 12 dBm independent of the substrate resistance network. The paper shows that, with good design, several 0.13- CMOS designs can be used for state-of-the-art switches at 26-40 GHz.     

基于SOI的2×2 MMI耦合器的设计

设计了一种可用于阵列波导光栅(AWG)解调集成微系统的绝缘体上硅(SOI)基2×2多模干涉(MMI)耦合器,用光束传播法(BPM)对MMI耦合器进行了模拟。耦合器输入/输出波导采用倒锥形,多模干涉区尺寸为6μm×57μm。在TE偏振中心波长为1.55μm时,器件附加损耗为0.46dB,不均匀性为0.06dB。在1.49～1.59μm波长范围内耦合器的附加损耗小于1.55dB。仿真结果表明所设计的2×2MMI耦合器体积小、附加损耗低、波长响应范围宽、分光均匀,符合片上集成系统的要求。     

Integrated optical switches in silicon based on SiGe-waveguides

The realization of switches in silicon base on monomode Ge-indiffused SiGe waveguides is reported. At a wavelength of 1.3 μm a Mach-Zehnder interferometer switch with a modulation depth of -10 dB at a current of 150 mA is obtained. This is the lowest value reported so far for single-mode optical switches in silicon     

一种新型基于光子晶体异质结耦合波导的全光开关的设计

基于电磁波在耦合波导中的传输特性,建立了一个光开关模型,利用耦合模理论、平面波展开法以及有限时域差分法进行设计和分析。分别分析改变介质柱的折射率和异质结位置变化对开关功能的影响。结果表明改变介电柱的折射率能影响开关的功能,而异质结耦合波导中介电柱的位置分布对光开关功能影响很小。利用这个特性可以在光开关的设计中有更多的灵活性。     

Monolithic integration of GaInAsP/InP carrier depletion directionalcouplers and GaInAs p-i-n detectors on semi-insulating InP

Monolithic integration of two optical switches consisting in carrier depletion directional couplers based on GaInAsP/InP double heterostructure waveguides, with two GaInAs p-i-n detectors has been realized on semi-insulating InP. Packaged devices based on 2 mm coupling length directional couplers exhibit a switching voltage of -15 V and a 3 dB cutoff frequency of 1.3 GHz. Also, total fiber-to-fiber insertion loss of only 16 dB is achieved without any antireflection coating     

2 × 2 optical waveguide matrix switch using nematic liquid crystal

A 2 × 2 nonblocking optical matrix switch, composed of four elemental switches formed in a slab waveguide, is described. Switching action is based on total internal reflection caused by an electrically controlled change in refractive index of the liquid crystal. Propagation loss was remarkably reduced to 2.3 dB/cm, both by using liquid crystal as a cladding layer and by operating at the 1.31 μm wavelength. The experimental matrix switch exhibited 7.3-7.7 dB insertion loss, -17.3 to -18.2 dB crosstalk, and a 14° switching angle.     

Monolithic fabrication of 2 × 2 crosspoint switches inInGaAs-InAlGaAs multiple quantum wells using quantum-well intermixing

In this letter, we report the fabrication of 2 × 2 crosspoint switches, which monolithically integrate passive waveguides, electro-absorption modulators and optical amplifiers onto one chip using sputtered SiO₂ quantum-well intermixing technique. The switches have low insertion loss to be about 4-5 dB and extinction ratios up to 26 dB     

Compact versatile thermooptical space switch based on beam steeringby a waveguide array

We present the implementation of an optical space switching concept based on thermooptic beam steering in an arrayed waveguide grating. Individual addressing of heaters on the array waveguides enables flexible switching of input signals to output waveguide channels. The switch can be used either as a 1-to-8 switch or as multiple parallel 1-to-4, 1-to-3, or 1-to-2 switches. For the implementation we used high-refractive-index SiON-SiO₂ planar waveguide technology, which allows the realization of compact devices using small bending radii. We achieved isolations of the “off'” channels with respect to the “on” channel of up to 29 dB for a 1-to-3 switch or better than 22 dB for all “off” waveguides for a 1-to-8 switch     

8～20GHz GaAs pin二极管单片单刀双掷开关

基于中国科学院微电子研究所的GaAs pin二极管工艺,设计、制作并测试了一种单片单刀双掷开关.在8～20GHz频段内,开关正向导通时的插人损耗最小值为1.5dB,输入和输出端的同波损耗大于10dB;开关关断状态的隔离度最大值为32dB.开关的支路采用串联-并联-并联的结构,其中的GaAs pin二极管基区厚为2.5μm.在1.3V的偏置电压下,正向导通的串联二极管工作电流为