Ho~(3+)离子在高场电致发光薄膜中发光特性的研究

我们已经系统地研究了Ho~(3+)离子在高场电致发光薄膜(ACELTF)中的发光特性,结果如下: 1.在高场ACELTF中Ho~(3+)离子的发光是由于在高场下加速的过热电子直接碰撞而激发的。 2.在ZnS:HoF_3和ZnS:Ho两种样品中,Ho~(3+)的发光特性(如发光光谱,激发态的寿     

有机电致发光薄膜的电流输运机理的分析

用TPD作空穴传输层、8－羟基喹啉锌作发光层,制备了有机薄膜器件,测量了其电致发光特性。分析了该器件的电流输运机理,认为该有机薄膜器件在电致发光时流过器件的电流受热电子注入效应、空间电荷限制效应、隧穿效及器件电阻效应的影响。     

无机电致发光的新进展及机理分析

主要介绍了分层优化结构、蓝源成彩技术（color—by—blue）及无机薄膜电致发光中的一些物理问题。在分层优化结构中采用了极性材料SiO2作为电子加速层，可以将过热电子的最大能量提到10eV左右，增加了可以激发发光中心的过热电子数目，是提高无机薄膜电致发光效率的唯一的方法。蓝源成彩技术（color—by—blue）是两种激发方式的混合——电致发光和光致发光，利用BaAl2S4：Eu材料中获得的高亮度（900cd／m^2）的蓝色电致发光激发绿色及红色光致发光材料，获得了色纯度非常高的三基色发光，实现了无机彩色电致发光。目前以蓝源成彩技术为基础的17英寸彩色电视机样机已经问世，这种电视机的最大亮度可以到600cd／cm^2，对比度达到1000：1．     

无机电致发光的新进展及机理分析

主要介绍了分层优化结构、蓝源成彩技术(color-by-blue)及无机薄膜电致发光中的一些物理问题。在分层优化结构中采用了极性材料SiO2作为电子加速层,可以将过热电子的最大能量提到10 eV左右,增加了可以激发发光中心的过热电子数目,是提高无机薄膜电致发光效率的唯一的方法。蓝源成彩技术(color-by-blue) 是两种激发方式的混合——电致发光和光致发光,利用BaAl2S4:Eu材料中获得的高亮度(900 cd／m2)的蓝色电致发光激发绿色及红色光致发光材料,获得了色纯度非常高的三基色发光,实现了无机彩色电致发光。目前以蓝源成彩技术为基础的17英寸彩色电视机样机已经问世,这种电视机的最大亮度可以到600 cd／cm2,对比度达到 1000:1。     

强激光驱动锥口多层靶的超热电子输运特性

为了提升超热电子的准直输运效率,提出了锥口多层靶模型,并通过二维PIC(particle-in-cell)模拟手段研究了强激光与锥口多层靶相互作用过程中超热电子的产生和输运特性。研究结果表明,相比于无锥结构的多层靶,锥口多层靶中输运的超热电子数目更多、能量更高且空间分布也更加集中,发散角被控制在-38°～38°之间的超热电子能量约增加了0.6倍,锥口多层靶能够提升超热电子的准直输运效率。锥口多层靶中超热电子准直输运效率提升的原因主要有三个方面:激光从锥壁上拉出了大量超热电子、锥壁对激光的聚焦作用增强了激光有质动力以及锥顶后方产生了较强的自生磁场分布。本文建立的模型对于提升"快点火"中超热电子的束品质具有重要意义。     

电极用金属的功函数对OLED发光性能的影响

OLED是一种主动发光器件，影响器件发光性能的因素很多，如电子流与空穴流间的平衡、发光层内电子与空穴的有效复合、外部注入非平衡载流子的能力等。外部注入非平衡载波子的能力与金属－半导体的界面特性有关。本文基于热电子发射理论论述了电极用金属的功函数与非平衡载流子注入的关系，说明其对OLED发光性能的影响。     

PVK∶Alq3掺杂体系电致发光器件性能的研究

采用一定比例的PVK和Alq3混合薄膜作为发光层．制备了Al／PVK：Alq3／ITO单层器件。利用PVK和Alq3混合薄膜的吸收光谱、激发光谱、光致发光谱、电致发光谱研究了薄膜的激发态过程，结果表明PVK和Alq3之间存在着能量传递，器件所表现的发光主要为Alq3的发光。同时利用电流电压关系、发光强度和电压的关系对器件的光电性能进行了研究，发现Al／PVK：Alq3／ITO单层器件有良好的发光性能。     

一种新结构中ZnSe薄膜电致发光特性研究

用电子束蒸发的方法制备了一种新的ITO／SiO2／ZnSe／SiO2／Al薄膜电致(TFEL)发光器件。在交流电压驱动下,其有2个发光峰,分别位于466nm和560nm。通过研究器件(PL)激发(PLE)谱、光致发光、EL发光以及EL发光强度随驱动电压和频率的变化发现,器件的发光来源于ZnSe的带边发射和自激活发光中心。器件的发光机理与一般的无机电致发光有所不同。这里,SiO2作为电子加速层,ZnSe作为发光层,电子在SiO2层中的高电场作用下被加速到很高的能量,然后直接碰撞激发ZnSe分子使其发光。这种发光现象被称为固态类阴极发光。     

用ZnS薄膜作为空穴缓冲层的高效率有机发光二极管

用磁控溅射方法制备的ZnS薄膜作为有机发光器件(OLEDs)的空穴缓冲层,使典型结构的 OLEDs(ITO/TPD/Alq/LiF/Al) 的发光性能得到改善.ZnS 缓冲层厚度对器件性能影响的实验结果表明,当ZnS缓冲层厚度为 5 nm 时,器件的亮度增加了2倍多;当ZnS缓冲层厚度为5、10 nm时,器件的发光电流效率增加40%.研究结果表明 ZnS 薄膜是一种好的缓冲层材料,它能够提高器件的发光效率,改善器件的稳定性.     

有源矩阵OLED

介绍了OLED的工作原理、器件结构、有源驱动等,有机发光器件由ITO阳极、金属阴／极和多层有机薄膜构成,其中各有机层分别起电子、空穴传输、复合发光及缓冲作用,讨论了发光效率和器件寿命及可靠性等问题。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks